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Transistor - FET, MOSFET - Susunan

SI7940DP-T1-GE3
Vishay Siliconix

SI7940DP-T1-GE3

bahagian bahagian: 2920

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7.6A, Rds On (Maks) @ Id, Vgs: 17 mOhm @ 11.8A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

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SI4936ADY-T1-E3
Vishay Siliconix

SI4936ADY-T1-E3

bahagian bahagian: 77138

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.4A, Rds On (Maks) @ Id, Vgs: 36 mOhm @ 5.9A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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SI5933CDC-T1-GE3
Vishay Siliconix

SI5933CDC-T1-GE3

bahagian bahagian: 181122

Jenis FET: 2 P-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.7A, Rds On (Maks) @ Id, Vgs: 144 mOhm @ 2.5A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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SI7223DN-T1-GE3
Vishay Siliconix

SI7223DN-T1-GE3

bahagian bahagian: 9952

Jenis FET: 2 P-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A (Tc), Rds On (Maks) @ Id, Vgs: 26.4 mOhm @ 8A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

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SI9933CDY-T1-E3
Vishay Siliconix

SI9933CDY-T1-E3

bahagian bahagian: 154905

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4A, Rds On (Maks) @ Id, Vgs: 58 mOhm @ 4.8A, 4.5V, Vgs (th) (Maks) @ Id: 1.4V @ 250µA,

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NTMD6N04R2G
ON Semiconductor

NTMD6N04R2G

bahagian bahagian: 3054

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.6A, Rds On (Maks) @ Id, Vgs: 34 mOhm @ 5.8A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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NVMFD5877NLWFT3G
ON Semiconductor

NVMFD5877NLWFT3G

bahagian bahagian: 181356

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A, Rds On (Maks) @ Id, Vgs: 39 mOhm @ 7.5A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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FDMQ8403
ON Semiconductor

FDMQ8403

bahagian bahagian: 56113

Jenis FET: 4 N-Channel (H-Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.1A, Rds On (Maks) @ Id, Vgs: 110 mOhm @ 3A, 10V, Vgs (th) (Maks) @ Id: 4V @ 250µA,

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FDS6892A
ON Semiconductor

FDS6892A

bahagian bahagian: 168833

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7.5A, Rds On (Maks) @ Id, Vgs: 18 mOhm @ 7.5A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

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NTZD3152PT1G
ON Semiconductor

NTZD3152PT1G

bahagian bahagian: 122573

Jenis FET: 2 P-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 430mA, Rds On (Maks) @ Id, Vgs: 900 mOhm @ 430mA, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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FDG6317NZ
ON Semiconductor

FDG6317NZ

bahagian bahagian: 187420

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 700mA, Rds On (Maks) @ Id, Vgs: 400 mOhm @ 700mA, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

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NTMD4820NR2G
ON Semiconductor

NTMD4820NR2G

bahagian bahagian: 199876

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.9A, Rds On (Maks) @ Id, Vgs: 20 mOhm @ 7.5A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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EMH2411R-TL-H
ON Semiconductor

EMH2411R-TL-H

bahagian bahagian: 3004

Jenis FET: 2 N-Channel (Dual) Common Drain, Ciri FET: Logic Level Gate, 2.5V Drive, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5A, Rds On (Maks) @ Id, Vgs: 36.5 mOhm @ 2.5A, 4.5V,

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FDS6930A
ON Semiconductor

FDS6930A

bahagian bahagian: 116150

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.5A, Rds On (Maks) @ Id, Vgs: 40 mOhm @ 5.5A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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NTLTD7900ZR2G
ON Semiconductor

NTLTD7900ZR2G

bahagian bahagian: 2926

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A, Rds On (Maks) @ Id, Vgs: 26 mOhm @ 6.5A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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FDS8984-F085
ON Semiconductor

FDS8984-F085

bahagian bahagian: 10834

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7A, Rds On (Maks) @ Id, Vgs: 23 mOhm @ 7A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

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IRF9952TRPBF
Infineon Technologies

IRF9952TRPBF

bahagian bahagian: 110076

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.5A, 2.3A, Rds On (Maks) @ Id, Vgs: 100 mOhm @ 2.2A, 10V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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IRFI4019H-117P
Infineon Technologies

IRFI4019H-117P

bahagian bahagian: 26279

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 150V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8.7A, Rds On (Maks) @ Id, Vgs: 95 mOhm @ 5.2A, 10V, Vgs (th) (Maks) @ Id: 4.9V @ 50µA,

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SSM6N815R,LF
Toshiba Semiconductor and Storage

SSM6N815R,LF

bahagian bahagian: 9939

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, 4V Drive, Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2A (Ta), Rds On (Maks) @ Id, Vgs: 103 mOhm @ 2A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 100µA,

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SSM6L35FE,LM
Toshiba Semiconductor and Storage

SSM6L35FE,LM

bahagian bahagian: 172252

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 180mA, 100mA, Rds On (Maks) @ Id, Vgs: 3 Ohm @ 50mA, 4V, Vgs (th) (Maks) @ Id: 1V @ 1mA,

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DMN61D9UDW-13
Diodes Incorporated

DMN61D9UDW-13

bahagian bahagian: 150473

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 350mA, Rds On (Maks) @ Id, Vgs: 2 Ohm @ 50mA, 5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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DMN67D8LDW-7
Diodes Incorporated

DMN67D8LDW-7

bahagian bahagian: 115475

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 230mA, Rds On (Maks) @ Id, Vgs: 5 Ohm @ 500mA, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

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DMN3055LFDB-7
Diodes Incorporated

DMN3055LFDB-7

bahagian bahagian: 130565

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5A (Ta), Rds On (Maks) @ Id, Vgs: 40 mOhm @ 3A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

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DMC3025LSD-13
Diodes Incorporated

DMC3025LSD-13

bahagian bahagian: 117443

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.5A, 4.2A, Rds On (Maks) @ Id, Vgs: 20 mOhm @ 7.4A, 10V, Vgs (th) (Maks) @ Id: 2V @ 250µA,

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DMN2019UTS-13
Diodes Incorporated

DMN2019UTS-13

bahagian bahagian: 148284

Jenis FET: 2 N-Channel (Dual) Common Drain, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.4A, Rds On (Maks) @ Id, Vgs: 18.5 mOhm @ 7A, 10V, Vgs (th) (Maks) @ Id: 950mV @ 250µA,

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DMN63D8LDW-13
Diodes Incorporated

DMN63D8LDW-13

bahagian bahagian: 103397

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 220mA, Rds On (Maks) @ Id, Vgs: 2.8 Ohm @ 250mA, 10V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

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DMC2450UV-7
Diodes Incorporated

DMC2450UV-7

bahagian bahagian: 102178

Jenis FET: N and P-Channel, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.03A, 700mA, Rds On (Maks) @ Id, Vgs: 480 mOhm @ 200mA, 5V, Vgs (th) (Maks) @ Id: 900mV @ 250µA,

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DMG6601LVT-7
Diodes Incorporated

DMG6601LVT-7

bahagian bahagian: 130944

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.8A, 2.5A, Rds On (Maks) @ Id, Vgs: 55 mOhm @ 3.4A, 10V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

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SLA5201
Sanken

SLA5201

bahagian bahagian: 6190

Jenis FET: 3 N and 3 P-Channel (3-Phase Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7A,

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SLA5075
Sanken

SLA5075

bahagian bahagian: 7543

Jenis FET: 6 N-Channel (3-Phase Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 500V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5A, Rds On (Maks) @ Id, Vgs: 1.4 Ohm @ 2.5A, 10V, Vgs (th) (Maks) @ Id: 4V @ 1mA,

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UT6J3TCR
Rohm Semiconductor

UT6J3TCR

bahagian bahagian: 114339

Jenis FET: 2 P-Channel (Dual), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3A, Rds On (Maks) @ Id, Vgs: 85 mOhm @ 3A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 1mA,

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MCCD2004-TP
Micro Commercial Co

MCCD2004-TP

bahagian bahagian: 153498

Jenis FET: 2 N-Channel (Dual) Common Drain, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 10A, Rds On (Maks) @ Id, Vgs: 10 mOhm @ 8A, 10V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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GWS4621L
Renesas Electronics America Inc.

GWS4621L

bahagian bahagian: 3027

Jenis FET: 2 N-Channel (Dual) Common Drain, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 10.1A (Ta), Rds On (Maks) @ Id, Vgs: 9.8 mOhm @ 3A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 1mA,

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CTLDM8120-M832DS BK
Central Semiconductor Corp

CTLDM8120-M832DS BK

bahagian bahagian: 3301

Jenis FET: 2 P-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 860mA (Ta), Rds On (Maks) @ Id, Vgs: 150 mOhm @ 950mA, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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TPS1120DG4
Texas Instruments

TPS1120DG4

bahagian bahagian: 42271

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 15V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.17A, Rds On (Maks) @ Id, Vgs: 180 mOhm @ 1.5A, 10V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

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TSM4953DCS RLG
Taiwan Semiconductor Corporation

TSM4953DCS RLG

bahagian bahagian: 10756

Jenis FET: 2 P-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.9A (Ta), Rds On (Maks) @ Id, Vgs: 60 mOhm @ 4.9A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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