Transistor - FET, MOSFET - Susunan

SP8K2TB

bahagian bahagian: 195188

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A, Rds On (Maks) @ Id, Vgs: 30 mOhm @ 6A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 1mA,

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SH8K15TB1

bahagian bahagian: 137046

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 9A, Rds On (Maks) @ Id, Vgs: 21 mOhm @ 9A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 1mA,

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QS8K11TCR

bahagian bahagian: 198738

Jenis FET: 2 N-Channel (Dual), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.5A, Rds On (Maks) @ Id, Vgs: 50 mOhm @ 3.5A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 1mA,

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US6M1TR

bahagian bahagian: 141982

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.4A, 1A, Rds On (Maks) @ Id, Vgs: 240 mOhm @ 1.4A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 1mA,

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SH8M13GZETB

bahagian bahagian: 173570

Jenis FET: N and P-Channel, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A, 7A, Rds On (Maks) @ Id, Vgs: 29 mOhm @ 7A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 1mA,

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SI1965DH-T1-GE3

bahagian bahagian: 150223

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.3A, Rds On (Maks) @ Id, Vgs: 390 mOhm @ 1A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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SI1016X-T1-GE3

bahagian bahagian: 135127

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 485mA, 370mA, Rds On (Maks) @ Id, Vgs: 700 mOhm @ 600mA, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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SI6926ADQ-T1-E3

bahagian bahagian: 129467

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.1A, Rds On (Maks) @ Id, Vgs: 30 mOhm @ 4.5A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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SI1023CX-T1-GE3

bahagian bahagian: 136072

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Rds On (Maks) @ Id, Vgs: 756 mOhm @ 350mA, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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SQ3989EV-T1_GE3

bahagian bahagian: 124228

Jenis FET: 2 P-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.5A (Tc), Rds On (Maks) @ Id, Vgs: 155 mOhm @ 400mA, 10V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

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SI4670DY-T1-GE3

bahagian bahagian: 139899

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 25V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8A, Rds On (Maks) @ Id, Vgs: 23 mOhm @ 7A, 10V, Vgs (th) (Maks) @ Id: 2.2V @ 250µA,

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SIZ300DT-T1-GE3

bahagian bahagian: 146800

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 11A, 28A, Rds On (Maks) @ Id, Vgs: 24 mOhm @ 9.8A, 10V, Vgs (th) (Maks) @ Id: 2.4V @ 250µA,

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SI7540ADP-T1-GE3

bahagian bahagian: 87195

Jenis FET: N and P-Channel, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 12A, 9A, Rds On (Maks) @ Id, Vgs: 28 mOhm @ 12A, 10V, Vgs (th) (Maks) @ Id: 1.4V @ 250µA,

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SI4943CDY-T1-E3

bahagian bahagian: 89694

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8A, Rds On (Maks) @ Id, Vgs: 19.2 mOhm @ 8.3A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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SQJ992EP-T1_GE3

bahagian bahagian: 130455

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 15A, Rds On (Maks) @ Id, Vgs: 56.2 mOhm @ 3.7A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

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SQJ570EP-T1_GE3

bahagian bahagian: 165202

Jenis FET: N and P-Channel, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 15A (Tc), 9.5A (Tc), Rds On (Maks) @ Id, Vgs: 45 mOhm @ 6A, 10V, 146 mOhm @ 6A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

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SI5902BDC-T1-GE3

bahagian bahagian: 125173

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4A, Rds On (Maks) @ Id, Vgs: 65 mOhm @ 3.1A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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Taiwan Semiconductor Corporation

SQ1539EH-T1_GE3

bahagian bahagian: 2491

Jenis FET: N and P-Channel, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 850mA (Tc), Rds On (Maks) @ Id, Vgs: 280 mOhm @ 1A, 10V, 940 mOhm @ 500mA, 10V, Vgs (th) (Maks) @ Id: 2.6V @ 250µA,

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Diodes Incorporated

DMN67D8LDW-13

bahagian bahagian: 104906

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 230mA, Rds On (Maks) @ Id, Vgs: 5 Ohm @ 500mA, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

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Diodes Incorporated

DMN2005DLP4K-7

bahagian bahagian: 162696

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 300mA, Rds On (Maks) @ Id, Vgs: 1.5 Ohm @ 10mA, 4V, Vgs (th) (Maks) @ Id: 900mV @ 100µA,

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Texas Instruments

CSD85302L

bahagian bahagian: 146505

Jenis FET: 2 N-Channel (Dual) Common Drain, Ciri FET: Standard,

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Texas Instruments

CSD86360Q5D

bahagian bahagian: 67326

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 25V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 50A, Vgs (th) (Maks) @ Id: 2.1V @ 250µA,

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TSM200N03DPQ33 RGG

bahagian bahagian: 2506

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 20A (Tc), Rds On (Maks) @ Id, Vgs: 20 mOhm @ 10A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

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FDMA1023PZ

bahagian bahagian: 100824

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.7A, Rds On (Maks) @ Id, Vgs: 72 mOhm @ 3.7A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

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FDS8958B

bahagian bahagian: 194401

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.4A, 4.5A, Rds On (Maks) @ Id, Vgs: 26 mOhm @ 6.4A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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NVMFD5485NLT3G

bahagian bahagian: 94178

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.3A, Rds On (Maks) @ Id, Vgs: 44 mOhm @ 15A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

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NTJD4158CT1G

bahagian bahagian: 159746

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 250mA, 880mA, Rds On (Maks) @ Id, Vgs: 1.5 Ohm @ 10mA, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 100µA,

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EFC6612R-TF

bahagian bahagian: 157184

Jenis FET: 2 N-Channel (Dual) Common Drain, Ciri FET: Logic Level Gate, 2.5V Drive,

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IRF7105TRPBF

bahagian bahagian: 196914

Jenis FET: N and P-Channel, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 25V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.5A, 2.3A, Rds On (Maks) @ Id, Vgs: 100 mOhm @ 1A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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IPG16N10S4L61AATMA1

bahagian bahagian: 195154

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 16A, Rds On (Maks) @ Id, Vgs: 61 mOhm @ 16A, 10V, Vgs (th) (Maks) @ Id: 2.1V @ 90µA,

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IPG20N06S4L14ATMA2

bahagian bahagian: 126778

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 20A, Rds On (Maks) @ Id, Vgs: 13.7 mOhm @ 17A, 10V, Vgs (th) (Maks) @ Id: 2.2V @ 20µA,

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