Transistor - FET, MOSFET - Susunan | Produk Semikonduktor Diskrit | 100

SIA929DJ-T1-GE3

bahagian bahagian: 141982

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.5A (Tc), Rds On (Maks) @ Id, Vgs: 64 mOhm @ 3A, 10V, Vgs (th) (Maks) @ Id: 1.1V @ 250µA,

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Vishay Siliconix

SQJB60EP-T1_GE3

bahagian bahagian: 152496

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 30A (Tc), Rds On (Maks) @ Id, Vgs: 12 mOhm @ 10A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

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Vishay Siliconix

SI4501BDY-T1-GE3

bahagian bahagian: 198146

Jenis FET: N and P-Channel, Common Drain, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, 8V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 12A, 8A, Rds On (Maks) @ Id, Vgs: 17 mOhm @ 10A, 10V, Vgs (th) (Maks) @ Id: 2V @ 250µA,

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Vishay Siliconix

SIA910EDJ-T1-GE3

bahagian bahagian: 151991

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.5A, Rds On (Maks) @ Id, Vgs: 28 mOhm @ 5.2A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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Vishay Siliconix

SIA923EDJ-T1-GE3

bahagian bahagian: 115135

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.5A, Rds On (Maks) @ Id, Vgs: 54 mOhm @ 3.8A, 4.5V, Vgs (th) (Maks) @ Id: 1.4V @ 250µA,

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Vishay Siliconix

SI5935CDC-T1-E3

bahagian bahagian: 110303

Jenis FET: 2 P-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4A, Rds On (Maks) @ Id, Vgs: 100 mOhm @ 3.1A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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Vishay Siliconix

SI3900DV-T1-E3

bahagian bahagian: 118197

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2A, Rds On (Maks) @ Id, Vgs: 125 mOhm @ 2.4A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

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Vishay Siliconix

SQ4961EY-T1_GE3

bahagian bahagian: 110087

Jenis FET: 2 P-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.4A (Tc), Rds On (Maks) @ Id, Vgs: 85 mOhm @ 3.5A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

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Vishay Siliconix

SQJ204EP-T1_GE3

bahagian bahagian: 2534

Jenis FET: 2 N-Channel (Dual) Asymmetrical, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 20A (Tc), 60A (Tc), Rds On (Maks) @ Id, Vgs: 8.3 mOhm @ 4A, 10V, 3 mOhm @ 10A, 10V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

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Vishay Siliconix

SI4948BEY-T1-E3

bahagian bahagian: 125210

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.4A, Rds On (Maks) @ Id, Vgs: 120 mOhm @ 3.1A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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Vishay Siliconix

SQJ952EP-T1_GE3

bahagian bahagian: 158569

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 23A (Tc), Rds On (Maks) @ Id, Vgs: 20 mOhm @ 10.3A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

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Vishay Siliconix

SI4599DY-T1-GE3

bahagian bahagian: 199648

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.8A, 5.8A, Rds On (Maks) @ Id, Vgs: 35.5 mOhm @ 5A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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Vishay Siliconix

SI7236DP-T1-GE3

bahagian bahagian: 45582

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 60A, Rds On (Maks) @ Id, Vgs: 5.2 mOhm @ 20.7A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

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ON Semiconductor

FDS6990AS

bahagian bahagian: 162854

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7.5A, Rds On (Maks) @ Id, Vgs: 22 mOhm @ 7.5A, 10V, Vgs (th) (Maks) @ Id: 3V @ 1mA,

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ON Semiconductor

NTJD5121NT2G

bahagian bahagian: 197174

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 295mA, Rds On (Maks) @ Id, Vgs: 1.6 Ohm @ 500mA, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

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ON Semiconductor

FDS6982AS

bahagian bahagian: 164073

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.3A, 8.6A, Rds On (Maks) @ Id, Vgs: 28 mOhm @ 6.3A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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ON Semiconductor

FDMA1028NZ

bahagian bahagian: 179878

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.7A, Rds On (Maks) @ Id, Vgs: 68 mOhm @ 3.7A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

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ON Semiconductor

EFC4C002NLTDG

bahagian bahagian: 85433

Jenis FET: 2 N-Channel (Dual) Common Drain, Ciri FET: Logic Level Gate, Vgs (th) (Maks) @ Id: 2.2V @ 1mA,

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Infineon Technologies

IRF8313TRPBF

bahagian bahagian: 190133

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 9.7A, Rds On (Maks) @ Id, Vgs: 15.5 mOhm @ 9.7A, 10V, Vgs (th) (Maks) @ Id: 2.35V @ 25µA,

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Infineon Technologies

IRFH4251DTRPBF

bahagian bahagian: 49673

Jenis FET: 2 N-Channel (Dual), Schottky, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 25V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 64A, 188A, Rds On (Maks) @ Id, Vgs: 3.2 mOhm @ 30A, 10V, Vgs (th) (Maks) @ Id: 2.1V @ 35µA,

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Infineon Technologies

IPG20N06S4L11ATMA1

bahagian bahagian: 97219

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 20A, Rds On (Maks) @ Id, Vgs: 11.2 mOhm @ 17A, 10V, Vgs (th) (Maks) @ Id: 2.2V @ 28µA,

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Infineon Technologies

IRF7341TRPBF

bahagian bahagian: 73259

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 55V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.7A, Rds On (Maks) @ Id, Vgs: 50 mOhm @ 4.7A, 10V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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Infineon Technologies

IRF7319TRPBF

bahagian bahagian: 180145

Jenis FET: N and P-Channel, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Rds On (Maks) @ Id, Vgs: 29 mOhm @ 5.8A, 10V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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Nexperia USA Inc.

NX138AKSX

bahagian bahagian: 183035

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 170mA (Ta), Rds On (Maks) @ Id, Vgs: 4.5 Ohm @ 170mA, 10V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

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Nexperia USA Inc.

PMCM650CUNEZ

bahagian bahagian: 2564

Jenis FET: 2 N-Channel (Dual) Common Drain, Ciri FET: Standard, Vgs (th) (Maks) @ Id: 900mV @ 250µA,

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Nexperia USA Inc.

PMDXB550UNEZ

bahagian bahagian: 183268

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 590mA, Rds On (Maks) @ Id, Vgs: 670 mOhm @ 590mA, 4.5V, Vgs (th) (Maks) @ Id: 950mV @ 250µA,

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Nexperia USA Inc.

NX3008NBKV,115

bahagian bahagian: 163831

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 400mA, Rds On (Maks) @ Id, Vgs: 1.4 Ohm @ 350mA, 4.5V, Vgs (th) (Maks) @ Id: 1.1V @ 250µA,

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Diodes Incorporated

DI9956T

bahagian bahagian: 2624

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.7A,

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Diodes Incorporated

DMN3190LDW-7

bahagian bahagian: 106764

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1A, Rds On (Maks) @ Id, Vgs: 190 mOhm @ 1.3A, 10V, Vgs (th) (Maks) @ Id: 2.8V @ 250µA,

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Diodes Incorporated

DMC31D5UDJ-7B

bahagian bahagian: 166000

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 220mA, 200mA, Rds On (Maks) @ Id, Vgs: 1.5 Ohm @ 100mA, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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Rohm Semiconductor

SP8J5TB

bahagian bahagian: 50648

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7A, Rds On (Maks) @ Id, Vgs: 28 mOhm @ 7A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 1mA,

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Rohm Semiconductor

US6M2TR

bahagian bahagian: 169040

Jenis FET: N and P-Channel, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.5A, 1A, Rds On (Maks) @ Id, Vgs: 240 mOhm @ 1.5A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 1mA,

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Rohm Semiconductor

SH8M4TB1

bahagian bahagian: 91212

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 9A, 7A, Rds On (Maks) @ Id, Vgs: 18 mOhm @ 9A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 1mA,

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Rohm Semiconductor

QH8KA1TCR

bahagian bahagian: 125338

Jenis FET: 2 N-Channel (Dual), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.5A, Rds On (Maks) @ Id, Vgs: 73 mOhm @ 4.5A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 1mA,

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Toshiba Semiconductor and Storage

SSM6N36FE,LM

bahagian bahagian: 161424

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 500mA, Rds On (Maks) @ Id, Vgs: 630 mOhm @ 200mA, 5V, Vgs (th) (Maks) @ Id: 1V @ 1mA,

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Taiwan Semiconductor Corporation

TSM3911DCX6 RFG

bahagian bahagian: 58130

Jenis FET: 2 P-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.2A (Ta), Rds On (Maks) @ Id, Vgs: 140 mOhm @ 2.2A, 4.5V, Vgs (th) (Maks) @ Id: 950mV @ 250µA,

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