Transistor - FET, MOSFET - Susunan | Produk Semikonduktor Diskrit | 100

SI4931DY-T1-GE3

bahagian bahagian: 180864

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.7A, Rds On (Maks) @ Id, Vgs: 18 mOhm @ 8.9A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 350µA,

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Vishay Siliconix

SI4228DY-T1-GE3

bahagian bahagian: 190253

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 25V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8A, Rds On (Maks) @ Id, Vgs: 18 mOhm @ 7A, 10V, Vgs (th) (Maks) @ Id: 1.4V @ 250µA,

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Vishay Siliconix

SI8902AEDB-T2-E1

bahagian bahagian: 3310

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 24V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 11A, Rds On (Maks) @ Id, Vgs: 28 mOhm @ 1A, 4.5V, Vgs (th) (Maks) @ Id: 900mV @ 250µA,

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Vishay Siliconix

SQJ960EP-T1_GE3

bahagian bahagian: 77437

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8A, Rds On (Maks) @ Id, Vgs: 36 mOhm @ 5.3A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

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Vishay Siliconix

SIA527DJ-T1-GE3

bahagian bahagian: 180836

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.5A, Rds On (Maks) @ Id, Vgs: 29 mOhm @ 5A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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Vishay Siliconix

SIB912DK-T1-GE3

bahagian bahagian: 125137

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.5A, Rds On (Maks) @ Id, Vgs: 216 mOhm @ 1.8A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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Vishay Siliconix

SI9933CDY-T1-GE3

bahagian bahagian: 185277

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4A, Rds On (Maks) @ Id, Vgs: 58 mOhm @ 4.8A, 4.5V, Vgs (th) (Maks) @ Id: 1.4V @ 250µA,

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Vishay Siliconix

SI7942DP-T1-E3

bahagian bahagian: 63525

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.8A, Rds On (Maks) @ Id, Vgs: 49 mOhm @ 5.9A, 10V, Vgs (th) (Maks) @ Id: 4V @ 250µA,

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Vishay Siliconix

SI7922DN-T1-GE3

bahagian bahagian: 86516

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.8A, Rds On (Maks) @ Id, Vgs: 195 mOhm @ 2.5A, 10V, Vgs (th) (Maks) @ Id: 3.5V @ 250µA,

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Vishay Siliconix

SI1036X-T1-GE3

bahagian bahagian: 2514

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 610mA (Ta), Rds On (Maks) @ Id, Vgs: 540 mOhm @ 500mA, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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Vishay Siliconix

SI7956DP-T1-GE3

bahagian bahagian: 44000

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 150V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.6A, Rds On (Maks) @ Id, Vgs: 105 mOhm @ 4.1A, 10V, Vgs (th) (Maks) @ Id: 4V @ 250µA,

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Nexperia USA Inc.

NX1029X,115

bahagian bahagian: 166606

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, 50V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 330mA, 170mA, Rds On (Maks) @ Id, Vgs: 7.5 Ohm @ 100mA, 10V, Vgs (th) (Maks) @ Id: 2.1V @ 250µA,

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Nexperia USA Inc.

PMGD780SN,115

bahagian bahagian: 171536

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 490mA, Rds On (Maks) @ Id, Vgs: 920 mOhm @ 300mA, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

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Rohm Semiconductor

EM6K1T2R

bahagian bahagian: 188653

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 100mA, Rds On (Maks) @ Id, Vgs: 8 Ohm @ 10mA, 4V, Vgs (th) (Maks) @ Id: 1.5V @ 100µA,

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Rohm Semiconductor

QS5K2TR

bahagian bahagian: 110824

Jenis FET: 2 N-Channel (Dual) Common Source, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2A, Rds On (Maks) @ Id, Vgs: 100 mOhm @ 2A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 1mA,

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Rohm Semiconductor

QH8JA1TCR

bahagian bahagian: 135582

Jenis FET: 2 P-Channel (Dual), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5A, Rds On (Maks) @ Id, Vgs: 38 mOhm @ 5A, 4.5V, Vgs (th) (Maks) @ Id: 1.2V @ 1mA,

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Rohm Semiconductor

UM6K1NTN

bahagian bahagian: 176441

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 100mA, Rds On (Maks) @ Id, Vgs: 8 Ohm @ 10mA, 4V, Vgs (th) (Maks) @ Id: 1.5V @ 100µA,

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Toshiba Semiconductor and Storage

SSM6N56FE,LM

bahagian bahagian: 179879

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, 1.5V Drive, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 800mA, Rds On (Maks) @ Id, Vgs: 235 mOhm @ 800mA, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 1mA,

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Toshiba Semiconductor and Storage

SSM6N15AFE,LM

bahagian bahagian: 178067

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 100mA, Rds On (Maks) @ Id, Vgs: 4 Ohm @ 10mA, 4V, Vgs (th) (Maks) @ Id: 1.5V @ 100µA,

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ON Semiconductor

FDG6301N-F085

bahagian bahagian: 2507

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 25V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 220mA, Rds On (Maks) @ Id, Vgs: 4 Ohm @ 220mA, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

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ON Semiconductor

NVMFD5485NLWFT3G

bahagian bahagian: 90689

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.3A, Rds On (Maks) @ Id, Vgs: 44 mOhm @ 15A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

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ON Semiconductor

NVLJD4007NZTAG

bahagian bahagian: 139596

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 245mA, Rds On (Maks) @ Id, Vgs: 7 Ohm @ 125mA, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 100µA,

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ON Semiconductor

EFC6605R-TR

bahagian bahagian: 197820

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, 2.5V Drive,

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Infineon Technologies

IPG20N04S4L08AATMA1

bahagian bahagian: 137972

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 20A, Rds On (Maks) @ Id, Vgs: 8.2 mOhm @ 17A, 10V, Vgs (th) (Maks) @ Id: 2.2V @ 22µA,

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Infineon Technologies

IPG20N06S415ATMA2

bahagian bahagian: 113173

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 20A, Rds On (Maks) @ Id, Vgs: 15.5 mOhm @ 17A, 10V, Vgs (th) (Maks) @ Id: 4V @ 20µA,

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Infineon Technologies

IPG20N04S4L11ATMA1

bahagian bahagian: 172926

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 20A, Rds On (Maks) @ Id, Vgs: 11.6 mOhm @ 17A, 10V, Vgs (th) (Maks) @ Id: 2.2V @ 15µA,

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Infineon Technologies

IRF7341GTRPBF

bahagian bahagian: 82222

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 55V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.1A, Rds On (Maks) @ Id, Vgs: 50 mOhm @ 5.1A, 10V, Vgs (th) (Maks) @ Id: 1V @ 250µA (Min),

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Infineon Technologies

IPG20N04S4L07ATMA1

bahagian bahagian: 104521

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 20A, Rds On (Maks) @ Id, Vgs: 7.2 mOhm @ 17A, 10V, Vgs (th) (Maks) @ Id: 2.2V @ 30µA,

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Infineon Technologies

IRF7314TRPBF

bahagian bahagian: 193267

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.3A, Rds On (Maks) @ Id, Vgs: 58 mOhm @ 2.9A, 4.5V, Vgs (th) (Maks) @ Id: 700mV @ 250µA,

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Diodes Incorporated

DMG1023UV-7

bahagian bahagian: 104503

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.03A, Rds On (Maks) @ Id, Vgs: 750 mOhm @ 430mA, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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Diodes Incorporated

DMN2011UFX-7

bahagian bahagian: 171759

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 12.2A (Ta), Rds On (Maks) @ Id, Vgs: 9.5 mOhm @ 10A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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Diodes Incorporated

DMC1017UPD-13

bahagian bahagian: 2684

Jenis FET: N and P-Channel Complementary, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 13A (Ta), 9.4A (Ta), Rds On (Maks) @ Id, Vgs: 17 mOhm @ 11.8A, 4.5V, 32 mOhm @ 8.9A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

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Diodes Incorporated

ZXMD63P03XTA

bahagian bahagian: 60635

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Rds On (Maks) @ Id, Vgs: 185 mOhm @ 1.2A, 10V, Vgs (th) (Maks) @ Id: 1V @ 250µA (Min),

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Texas Instruments

CSD88537ND

bahagian bahagian: 132851

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 15A, Rds On (Maks) @ Id, Vgs: 15 mOhm @ 8A, 10V, Vgs (th) (Maks) @ Id: 3.6V @ 250µA,

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Panasonic Electronic Components

UP0497900L

bahagian bahagian: 2637

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 50V, 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 100mA, Rds On (Maks) @ Id, Vgs: 12 Ohm @ 10mA, 4V, Vgs (th) (Maks) @ Id: 1.5V @ 1µA,

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Panasonic Electronic Components

UP0487C00L

bahagian bahagian: 188334

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 100mA, Rds On (Maks) @ Id, Vgs: 4 Ohm @ 10mA, 4V, Vgs (th) (Maks) @ Id: 1.3V @ 50µA,

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