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Ingatan

CY62147EV18LL-45BVXIT
Cypress Semiconductor Corp

CY62147EV18LL-45BVXIT

bahagian bahagian: 8545

Jenis Ingatan: Volatile, Format Memori: SRAM, Teknologi: SRAM - Asynchronous, Saiz Ingatan: 4Mb (256K x 16), Tulis Masa Kitaran - Perkataan, Halaman: 45ns,

Senarai harapan
CY62167DV30LL-45ZXI
Cypress Semiconductor Corp

CY62167DV30LL-45ZXI

bahagian bahagian: 8581

Jenis Ingatan: Volatile, Format Memori: SRAM, Teknologi: SRAM - Asynchronous, Saiz Ingatan: 16Mb (1M x 16), Tulis Masa Kitaran - Perkataan, Halaman: 45ns,

Senarai harapan
CY7C10211BN-10ZXC
Cypress Semiconductor Corp

CY7C10211BN-10ZXC

bahagian bahagian: 221

Jenis Ingatan: Volatile, Format Memori: SRAM, Teknologi: SRAM - Asynchronous, Saiz Ingatan: 1Mb (64K x 16), Tulis Masa Kitaran - Perkataan, Halaman: 10ns,

Senarai harapan
CY7C1339G-133AXI
Cypress Semiconductor Corp

CY7C1339G-133AXI

bahagian bahagian: 4870

Jenis Ingatan: Volatile, Format Memori: SRAM, Teknologi: SRAM - Synchronous, Saiz Ingatan: 4Mb (128K x 32), Kekerapan Jam: 133MHz,

Senarai harapan
CY7C109BN-20ZXCT
Cypress Semiconductor Corp

CY7C109BN-20ZXCT

bahagian bahagian: 9217

Jenis Ingatan: Volatile, Format Memori: SRAM, Teknologi: SRAM - Asynchronous, Saiz Ingatan: 1Mb (128K x 8), Tulis Masa Kitaran - Perkataan, Halaman: 20ns,

Senarai harapan
CY7C1021BN-15ZXIT
Cypress Semiconductor Corp

CY7C1021BN-15ZXIT

bahagian bahagian: 9202

Jenis Ingatan: Volatile, Format Memori: SRAM, Teknologi: SRAM - Asynchronous, Saiz Ingatan: 1Mb (64K x 16), Tulis Masa Kitaran - Perkataan, Halaman: 15ns,

Senarai harapan
CY7C1325G-100AXC
Cypress Semiconductor Corp

CY7C1325G-100AXC

bahagian bahagian: 1481

Jenis Ingatan: Volatile, Format Memori: SRAM, Teknologi: SRAM - Synchronous, Saiz Ingatan: 4.5Mb (256K x 18), Kekerapan Jam: 100MHz,

Senarai harapan
CY7C1370D-167AXCT
Cypress Semiconductor Corp

CY7C1370D-167AXCT

bahagian bahagian: 9380

Jenis Ingatan: Volatile, Format Memori: SRAM, Teknologi: SRAM - Synchronous, Saiz Ingatan: 18Mb (512K x 36), Kekerapan Jam: 167MHz,

Senarai harapan
CY62167G30-55ZXET
Cypress Semiconductor Corp

CY62167G30-55ZXET

bahagian bahagian: 6220

Jenis Ingatan: Volatile, Format Memori: SRAM, Teknologi: SRAM - Asynchronous, Saiz Ingatan: 16Mb (2M x 8, 1M x 16), Tulis Masa Kitaran - Perkataan, Halaman: 55ns,

Senarai harapan
CY7C037AV-20AXI
Cypress Semiconductor Corp

CY7C037AV-20AXI

bahagian bahagian: 6593

Jenis Ingatan: Volatile, Format Memori: SRAM, Teknologi: SRAM - Dual Port, Asynchronous, Saiz Ingatan: 576Kb (32K x 18), Tulis Masa Kitaran - Perkataan, Halaman: 20ns,

Senarai harapan
CY7C1347G-200AXCT
Cypress Semiconductor Corp

CY7C1347G-200AXCT

bahagian bahagian: 13380

Jenis Ingatan: Volatile, Format Memori: SRAM, Teknologi: SRAM - Synchronous, Saiz Ingatan: 4.5Mb (128K x 36), Kekerapan Jam: 200MHz,

Senarai harapan
CY62157EV30LL-45ZXI
Cypress Semiconductor Corp

CY62157EV30LL-45ZXI

bahagian bahagian: 6157

Jenis Ingatan: Volatile, Format Memori: SRAM, Teknologi: SRAM - Asynchronous, Saiz Ingatan: 8Mb (512K x 16), Tulis Masa Kitaran - Perkataan, Halaman: 45ns,

Senarai harapan
S29GL01GT10FHI020
Cypress Semiconductor Corp

S29GL01GT10FHI020

bahagian bahagian: 5475

Jenis Ingatan: Non-Volatile, Format Memori: FLASH, Teknologi: FLASH - NOR, Saiz Ingatan: 1Gb (128M x 8), Tulis Masa Kitaran - Perkataan, Halaman: 60ns,

Senarai harapan
CY7C024-15JXCT
Cypress Semiconductor Corp

CY7C024-15JXCT

bahagian bahagian: 8774

Jenis Ingatan: Volatile, Format Memori: SRAM, Teknologi: SRAM - Dual Port, Asynchronous, Saiz Ingatan: 64Kb (4K x 16), Tulis Masa Kitaran - Perkataan, Halaman: 15ns,

Senarai harapan
S25FL128P0XNFI011
Cypress Semiconductor Corp

S25FL128P0XNFI011

bahagian bahagian: 17626

Jenis Ingatan: Non-Volatile, Format Memori: FLASH, Teknologi: FLASH - NOR, Saiz Ingatan: 128Mb (16M x 8), Kekerapan Jam: 104MHz, Tulis Masa Kitaran - Perkataan, Halaman: 3ms,

Senarai harapan
CY7C1415KV18-333BZI
Cypress Semiconductor Corp

CY7C1415KV18-333BZI

bahagian bahagian: 8564

Jenis Ingatan: Volatile, Format Memori: SRAM, Teknologi: SRAM - Synchronous, QDR II, Saiz Ingatan: 36Mb (1M x 36), Kekerapan Jam: 333MHz,

Senarai harapan
FM25V20-DGTR
Cypress Semiconductor Corp

FM25V20-DGTR

bahagian bahagian: 8949

Jenis Ingatan: Non-Volatile, Format Memori: FRAM, Teknologi: FRAM (Ferroelectric RAM), Saiz Ingatan: 2Mb (256K x 8), Kekerapan Jam: 40MHz,

Senarai harapan
S29GL512P12FFIV20
Cypress Semiconductor Corp

S29GL512P12FFIV20

bahagian bahagian: 457

Jenis Ingatan: Non-Volatile, Format Memori: FLASH, Teknologi: FLASH - NOR, Saiz Ingatan: 512Mb (32M x 16), Tulis Masa Kitaran - Perkataan, Halaman: 120ns,

Senarai harapan
S25FL208K0RMFI041
Cypress Semiconductor Corp

S25FL208K0RMFI041

bahagian bahagian: 189

Jenis Ingatan: Non-Volatile, Format Memori: FLASH, Teknologi: FLASH - NOR, Saiz Ingatan: 8Mb (1M x 8), Kekerapan Jam: 76MHz, Tulis Masa Kitaran - Perkataan, Halaman: 5ms,

Senarai harapan
FM25V02-DGTR
Cypress Semiconductor Corp

FM25V02-DGTR

bahagian bahagian: 8949

Jenis Ingatan: Non-Volatile, Format Memori: FRAM, Teknologi: FRAM (Ferroelectric RAM), Saiz Ingatan: 256Kb (32K x 8), Kekerapan Jam: 40MHz,

Senarai harapan
CY7C1414KV18-333BZXC
Cypress Semiconductor Corp

CY7C1414KV18-333BZXC

bahagian bahagian: 6888

Jenis Ingatan: Volatile, Format Memori: SRAM, Teknologi: SRAM - Synchronous, QDR II, Saiz Ingatan: 36Mb (1M x 36), Kekerapan Jam: 333MHz,

Senarai harapan
FM28V020-TGTR
Cypress Semiconductor Corp

FM28V020-TGTR

bahagian bahagian: 6370

Jenis Ingatan: Non-Volatile, Format Memori: FRAM, Teknologi: FRAM (Ferroelectric RAM), Saiz Ingatan: 256Kb (32K x 8), Tulis Masa Kitaran - Perkataan, Halaman: 140ns,

Senarai harapan
S71KL512SC0BHV003
Cypress Semiconductor Corp

S71KL512SC0BHV003

bahagian bahagian: 7627

Jenis Ingatan: Non-Volatile, Format Memori: FLASH, RAM, Teknologi: FLASH, DRAM, Saiz Ingatan: 512Mbit Flash, 64Mbit RAM, Kekerapan Jam: 100MHz,

Senarai harapan
CY7C1440AV33-250BZXI
Cypress Semiconductor Corp

CY7C1440AV33-250BZXI

bahagian bahagian: 979

Jenis Ingatan: Volatile, Format Memori: SRAM, Teknologi: SRAM - Synchronous, Saiz Ingatan: 36Mb (1M x 36), Kekerapan Jam: 250MHz,

Senarai harapan
CY7S1049GE30-10VXI
Cypress Semiconductor Corp

CY7S1049GE30-10VXI

bahagian bahagian: 7420

Jenis Ingatan: Volatile, Format Memori: SRAM, Teknologi: SRAM - Asynchronous, Saiz Ingatan: 4Mb (512K x 8), Tulis Masa Kitaran - Perkataan, Halaman: 10ns,

Senarai harapan
S25FL129P0XBHIZ00
Cypress Semiconductor Corp

S25FL129P0XBHIZ00

bahagian bahagian: 9943

Jenis Ingatan: Non-Volatile, Format Memori: FLASH, Teknologi: FLASH - NOR, Saiz Ingatan: 128Mb (16M x 8), Kekerapan Jam: 104MHz, Tulis Masa Kitaran - Perkataan, Halaman: 5µs, 3ms,

Senarai harapan
S25FL129P0XBHI303
Cypress Semiconductor Corp

S25FL129P0XBHI303

bahagian bahagian: 9913

Jenis Ingatan: Non-Volatile, Format Memori: FLASH, Teknologi: FLASH - NOR, Saiz Ingatan: 128Mb (16M x 8), Kekerapan Jam: 104MHz, Tulis Masa Kitaran - Perkataan, Halaman: 5µs, 3ms,

Senarai harapan
FM25640B-GA
Cypress Semiconductor Corp

FM25640B-GA

bahagian bahagian: 19768

Jenis Ingatan: Non-Volatile, Format Memori: FRAM, Teknologi: FRAM (Ferroelectric RAM), Saiz Ingatan: 64Kb (8K x 8), Kekerapan Jam: 4MHz,

Senarai harapan
CY7C1625KV18-300BZXC
Cypress Semiconductor Corp

CY7C1625KV18-300BZXC

bahagian bahagian: 7082

Jenis Ingatan: Volatile, Format Memori: SRAM, Teknologi: SRAM - Synchronous, QDR II, Saiz Ingatan: 144Mb (16M x 9), Kekerapan Jam: 300MHz,

Senarai harapan
S29GL01GP12TFI020
Cypress Semiconductor Corp

S29GL01GP12TFI020

bahagian bahagian: 345

Jenis Ingatan: Non-Volatile, Format Memori: FLASH, Teknologi: FLASH - NOR, Saiz Ingatan: 1Gb (128M x 8), Tulis Masa Kitaran - Perkataan, Halaman: 120ns,

Senarai harapan
S29WS512P0SBFW003
Cypress Semiconductor Corp

S29WS512P0SBFW003

bahagian bahagian: 88

Jenis Ingatan: Non-Volatile, Format Memori: FLASH, Teknologi: FLASH - NOR, Saiz Ingatan: 512Mb (32M x 16), Kekerapan Jam: 80MHz, Tulis Masa Kitaran - Perkataan, Halaman: 60ns,

Senarai harapan
FM21L16-60-TGTR
Cypress Semiconductor Corp

FM21L16-60-TGTR

bahagian bahagian: 8812

Jenis Ingatan: Non-Volatile, Format Memori: FRAM, Teknologi: FRAM (Ferroelectric RAM), Saiz Ingatan: 2Mb (128K x 16), Tulis Masa Kitaran - Perkataan, Halaman: 110ns,

Senarai harapan
S29CL032J0PQFM010
Cypress Semiconductor Corp

S29CL032J0PQFM010

bahagian bahagian: 3223

Jenis Ingatan: Non-Volatile, Format Memori: FLASH, Teknologi: FLASH - NOR, Saiz Ingatan: 32Mb (1M x 32), Kekerapan Jam: 66MHz, Tulis Masa Kitaran - Perkataan, Halaman: 60ns,

Senarai harapan
S29GL01GP11FFIR10
Cypress Semiconductor Corp

S29GL01GP11FFIR10

bahagian bahagian: 302

Jenis Ingatan: Non-Volatile, Format Memori: FLASH, Teknologi: FLASH - NOR, Saiz Ingatan: 1Gb (128M x 8), Tulis Masa Kitaran - Perkataan, Halaman: 110ns,

Senarai harapan
FM25CL64B-GA
Cypress Semiconductor Corp

FM25CL64B-GA

bahagian bahagian: 14858

Jenis Ingatan: Non-Volatile, Format Memori: FRAM, Teknologi: FRAM (Ferroelectric RAM), Saiz Ingatan: 64Kb (8K x 8), Kekerapan Jam: 16MHz,

Senarai harapan
S29GL01GT13DHNV20
Cypress Semiconductor Corp

S29GL01GT13DHNV20

bahagian bahagian: 5741

Jenis Ingatan: Non-Volatile, Format Memori: FLASH, Teknologi: FLASH - NOR, Saiz Ingatan: 1Gb (128M x 8), Tulis Masa Kitaran - Perkataan, Halaman: 60ns,

Senarai harapan