Dioda - Penyearah - Susunan | Produk Semikonduktor Diskrit | 3

GSXD060A018S1-D3

bahagian bahagian: 3533

Konfigurasi Diod: 2 Independent, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 180V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 60A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 920mV @ 60A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Global Power Technologies Group

GSXD060A010S1-D3

bahagian bahagian: 4530

Konfigurasi Diod: 2 Independent, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 60A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 840mV @ 60A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Global Power Technologies Group

GSXF100A100S1-D3

bahagian bahagian: 3391

Konfigurasi Diod: 2 Independent, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1000V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 100A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 2.35V @ 100A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Global Power Technologies Group

GSXD100A012S1-D3

bahagian bahagian: 3525

Konfigurasi Diod: 2 Independent, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 120V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 100A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 880mV @ 100A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Global Power Technologies Group

GSXF060A120S1-D3

bahagian bahagian: 3187

Konfigurasi Diod: 2 Independent, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 60A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 2.35V @ 60A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Global Power Technologies Group

GSXD160A015S1-D3

bahagian bahagian: 2582

Konfigurasi Diod: 2 Independent, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 150V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 160A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 880mV @ 160A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Global Power Technologies Group

GSXD120A004S1-D3

bahagian bahagian: 3499

Konfigurasi Diod: 2 Independent, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 45V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 120A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 700mV @ 120A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Global Power Technologies Group

GSXF030A020S1-D3

bahagian bahagian: 4278

Konfigurasi Diod: 2 Independent, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 30A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 30A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Global Power Technologies Group

GSXD100A018S1-D3

bahagian bahagian: 3373

Konfigurasi Diod: 2 Independent, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 180V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 100A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 920mV @ 100A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Global Power Technologies Group

GSXD050A015S1-D3

bahagian bahagian: 4033

Konfigurasi Diod: 2 Independent, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 150V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 50A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 880mV @ 50A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Global Power Technologies Group

GSXF120A120S1-D3

bahagian bahagian: 3269

Konfigurasi Diod: 2 Independent, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 120A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 2.35V @ 120A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Global Power Technologies Group

GSXD060A008S1-D3

bahagian bahagian: 3820

Konfigurasi Diod: 2 Independent, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 80V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 60A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 840mV @ 60A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Global Power Technologies Group

GSXD160A008S1-D3

bahagian bahagian: 2764

Konfigurasi Diod: 2 Independent, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 80V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 160A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 840mV @ 160A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Global Power Technologies Group

GSXD080A004S1-D3

bahagian bahagian: 4780

Konfigurasi Diod: 2 Independent, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 45V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 80A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 700mV @ 80A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Global Power Technologies Group

GSXD100A015S1-D3

bahagian bahagian: 3546

Konfigurasi Diod: 2 Independent, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 150V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 100A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 880mV @ 100A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Global Power Technologies Group

GSXD080A015S1-D3

bahagian bahagian: 3626

Konfigurasi Diod: 2 Independent, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 150V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 80A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 880mV @ 80A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Global Power Technologies Group

GSXD080A012S1-D3

bahagian bahagian: 3740

Konfigurasi Diod: 2 Independent, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 120V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 80A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 880mV @ 80A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Global Power Technologies Group

GP2D030A120U

bahagian bahagian: 4458

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 50A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.8V @ 15A, Kepantasan: No Recovery Time > 500mA (Io),

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Global Power Technologies Group

GP2D060A120U

bahagian bahagian: 2940

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 94A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.8V @ 30A, Kepantasan: No Recovery Time > 500mA (Io),

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Global Power Technologies Group

GDP30D120B

bahagian bahagian: 4177

Konfigurasi Diod: 1 Pair Common Anode, Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 15A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 15A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Global Power Technologies Group

GP2D020A065U

bahagian bahagian: 12168

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 650V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 30A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.65V @ 10A, Kepantasan: No Recovery Time > 500mA (Io),

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Global Power Technologies Group

GDP24D060B

bahagian bahagian: 4184

Konfigurasi Diod: 1 Pair Common Anode, Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 12A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 12A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Global Power Technologies Group

GP2D020A120U

bahagian bahagian: 7944

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 33A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.8V @ 10A, Kepantasan: No Recovery Time > 500mA (Io),

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Global Power Technologies Group

GDP60D120B

bahagian bahagian: 4163

Konfigurasi Diod: 1 Pair Common Anode, Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 30A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 30A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Global Power Technologies Group

GP2D010A120U

bahagian bahagian: 15850

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 17A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.8V @ 5A, Kepantasan: No Recovery Time > 500mA (Io),

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Global Power Technologies Group

GDP60Y120B

bahagian bahagian: 4230

Konfigurasi Diod: 1 Pair Common Anode, Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 30A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 30A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Global Power Technologies Group

GP2D040A120U

bahagian bahagian: 4340

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 65A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.8V @ 20A, Kepantasan: No Recovery Time > 500mA (Io),

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Global Power Technologies Group

GDP48Y060B

bahagian bahagian: 4217

Konfigurasi Diod: 1 Pair Common Anode, Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 24A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 24A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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