Dioda - Penyearah - Susunan | Produk Semikonduktor Diskrit | 3

GSXD060A006S1-D3

bahagian bahagian: 3906

Konfigurasi Diod: 2 Independent, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 60V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 60A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 750mV @ 60A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Global Power Technologies Group

GSXD120A020S1-D3

bahagian bahagian: 3353

Konfigurasi Diod: 2 Independent, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 120A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 920mV @ 120A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Global Power Technologies Group

GSXD060A004S1-D3

bahagian bahagian: 4770

Konfigurasi Diod: 2 Independent, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 45V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 60A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 700mV @ 60A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Global Power Technologies Group

GHXS020A060S-D3

bahagian bahagian: 2086

Konfigurasi Diod: 2 Independent, Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 20A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 20A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Global Power Technologies Group

GSXD100A020S1-D3

bahagian bahagian: 3234

Konfigurasi Diod: 2 Independent, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 100A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 920mV @ 100A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Global Power Technologies Group

GSXD060A020S1-D3

bahagian bahagian: 3381

Konfigurasi Diod: 2 Independent, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 60A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 920mV @ 60A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Global Power Technologies Group

GSXD050A004S1-D3

bahagian bahagian: 4472

Konfigurasi Diod: 2 Independent, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 45V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 50A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 700mV @ 50A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Global Power Technologies Group

GSXD160A020S1-D3

bahagian bahagian: 2564

Konfigurasi Diod: 2 Independent, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 160A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 920mV @ 160A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Global Power Technologies Group

GSXD050A010S1-D3

bahagian bahagian: 4264

Konfigurasi Diod: 2 Independent, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 50A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 840mV @ 50A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Global Power Technologies Group

GSXF100A060S1-D3

bahagian bahagian: 3401

Konfigurasi Diod: 2 Independent, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 100A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.5V @ 100A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Global Power Technologies Group

GSXD080A020S1-D3

bahagian bahagian: 3480

Konfigurasi Diod: 2 Independent, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 80A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 920mV @ 80A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Global Power Technologies Group

GSXD050A006S1-D3

bahagian bahagian: 4403

Konfigurasi Diod: 2 Independent, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 60V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 50A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 750mV @ 50A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Global Power Technologies Group

GSXF100A040S1-D3

bahagian bahagian: 3366

Konfigurasi Diod: 2 Independent, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 100A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.3V @ 100A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Global Power Technologies Group

GSXD100A008S1-D3

bahagian bahagian: 3637

Konfigurasi Diod: 2 Independent, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 80V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 100A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 840mV @ 100A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Global Power Technologies Group

GSXF030A100S1-D3

bahagian bahagian: 4593

Konfigurasi Diod: 2 Independent, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1000V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 30A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 2.35V @ 30A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Global Power Technologies Group

GSXD120A006S1-D3

bahagian bahagian: 3548

Konfigurasi Diod: 2 Independent, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 60V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 120A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 750mV @ 120A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Global Power Technologies Group

GSXD100A010S1-D3

bahagian bahagian: 3649

Konfigurasi Diod: 2 Independent, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 100A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 840mV @ 100A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Global Power Technologies Group

GSXF120A100S1-D3

bahagian bahagian: 3351

Konfigurasi Diod: 2 Independent, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1000V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 120A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 2.35V @ 120A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Global Power Technologies Group

GHXS030A120S-D3

bahagian bahagian: 1125

Konfigurasi Diod: 2 Independent, Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 30A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 30A, Kepantasan: No Recovery Time > 500mA (Io),

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Global Power Technologies Group

GSXD030A010S1-D3

bahagian bahagian: 5259

Konfigurasi Diod: 2 Independent, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 30A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 840mV @ 30A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Global Power Technologies Group

GSXD080A006S1-D3

bahagian bahagian: 3916

Konfigurasi Diod: 2 Independent, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 60V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 80A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 750mV @ 80A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Global Power Technologies Group

GSXD120A018S1-D3

bahagian bahagian: 3499

Konfigurasi Diod: 2 Independent, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 180V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 120A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 920mV @ 120A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Global Power Technologies Group

GSXD060A012S1-D3

bahagian bahagian: 3656

Konfigurasi Diod: 2 Independent, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 120V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 60A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 880mV @ 60A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Global Power Technologies Group

GSXD080A018S1-D3

bahagian bahagian: 3569

Konfigurasi Diod: 2 Independent, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 180V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 80A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 920mV @ 80A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Global Power Technologies Group

GSXD050A020S1-D3

bahagian bahagian: 3837

Konfigurasi Diod: 2 Independent, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 50A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 920mV @ 50A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Global Power Technologies Group

GSXD160A018S1-D3

bahagian bahagian: 2523

Konfigurasi Diod: 2 Independent, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 180V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 160A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 920mV @ 160A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Global Power Technologies Group

GSXD160A012S1-D3

bahagian bahagian: 2661

Konfigurasi Diod: 2 Independent, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 120V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 160A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 880mV @ 160A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Global Power Technologies Group

GSXD160A010S1-D3

bahagian bahagian: 2749

Konfigurasi Diod: 2 Independent, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 160A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 840mV @ 160A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Global Power Technologies Group

GSXD060A015S1-D3

bahagian bahagian: 3529

Konfigurasi Diod: 2 Independent, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 150V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 60A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 880mV @ 60A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Global Power Technologies Group

GSXD050A018S1-D3

bahagian bahagian: 3985

Konfigurasi Diod: 2 Independent, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 180V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 50A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 920mV @ 50A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Global Power Technologies Group

GHXS015A120S-D4

bahagian bahagian: 1973

Konfigurasi Diod: 2 Independent, Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 15A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 15A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Global Power Technologies Group

GSXF120A020S1-D3

bahagian bahagian: 3421

Konfigurasi Diod: 2 Independent, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 120A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 120A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Global Power Technologies Group

GSXF120A040S1-D3

bahagian bahagian: 3601

Konfigurasi Diod: 2 Independent, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 120A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.3V @ 120A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Global Power Technologies Group

GSXD050A012S1-D3

bahagian bahagian: 4093

Konfigurasi Diod: 2 Independent, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 120V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 50A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 880mV @ 50A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Global Power Technologies Group

GSXD100A004S1-D3

bahagian bahagian: 3380

Konfigurasi Diod: 2 Independent, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 45V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 100A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 700mV @ 100A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Global Power Technologies Group

GSXD080A010S1-D3

bahagian bahagian: 3765

Konfigurasi Diod: 2 Independent, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 160A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 840mV @ 80A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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