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Diod - Zener - Bujang

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  • Diod - Zener - Bujang
BZD17C180P RTG
Taiwan Semiconductor Corporation

BZD17C180P RTG

bahagian bahagian: 233

Voltan - Zener (Nom) (Vz): 180V, Toleransi: ±6.38%, Kuasa - Maks: 800mW, Impedans (Maks) (Zzt): 450 Ohms, Semasa - Kebocoran Terbalik @ Vr: 1µA @ 130V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 200mA,

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BZD27C56P RTG
Taiwan Semiconductor Corporation

BZD27C56P RTG

bahagian bahagian: 199

Voltan - Zener (Nom) (Vz): 56V, Toleransi: ±7.14%, Kuasa - Maks: 1W, Impedans (Maks) (Zzt): 60 Ohms, Semasa - Kebocoran Terbalik @ Vr: 1µA @ 43V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 200mA,

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BZD27C56P RHG
Taiwan Semiconductor Corporation

BZD27C56P RHG

bahagian bahagian: 173

Voltan - Zener (Nom) (Vz): 56V, Toleransi: ±7.14%, Kuasa - Maks: 1W, Impedans (Maks) (Zzt): 60 Ohms, Semasa - Kebocoran Terbalik @ Vr: 1µA @ 43V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 200mA,

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BZD27C22P RTG
Taiwan Semiconductor Corporation

BZD27C22P RTG

bahagian bahagian: 176

Voltan - Zener (Nom) (Vz): 22.05V, Toleransi: ±5.66%, Kuasa - Maks: 1W, Impedans (Maks) (Zzt): 15 Ohms, Semasa - Kebocoran Terbalik @ Vr: 1µA @ 16V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 200mA,

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BZV55B2V7 L0G
Taiwan Semiconductor Corporation

BZV55B2V7 L0G

bahagian bahagian: 156

Voltan - Zener (Nom) (Vz): 2.7V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 85 Ohms, Semasa - Kebocoran Terbalik @ Vr: 10µA @ 1V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 100mA,

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BZV55B30 L1G
Taiwan Semiconductor Corporation

BZV55B30 L1G

bahagian bahagian: 194

Voltan - Zener (Nom) (Vz): 30V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 80 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 22V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 100mA,

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BZV55B3V0 L0G
Taiwan Semiconductor Corporation

BZV55B3V0 L0G

bahagian bahagian: 220

Voltan - Zener (Nom) (Vz): 3V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 85 Ohms, Semasa - Kebocoran Terbalik @ Vr: 4µA @ 1V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 100mA,

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BZT55B30 L1G
Taiwan Semiconductor Corporation

BZT55B30 L1G

bahagian bahagian: 218

Voltan - Zener (Nom) (Vz): 30V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 80 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 22V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZV55C24 L0G
Taiwan Semiconductor Corporation

BZV55C24 L0G

bahagian bahagian: 199

Voltan - Zener (Nom) (Vz): 24V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 80 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 18V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZV55B11 L0G
Taiwan Semiconductor Corporation

BZV55B11 L0G

bahagian bahagian: 221

Voltan - Zener (Nom) (Vz): 11V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 20 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 8.2V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 100mA,

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BZV55C4V3 L0G
Taiwan Semiconductor Corporation

BZV55C4V3 L0G

bahagian bahagian: 162

Voltan - Zener (Nom) (Vz): 4.3V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 75 Ohms, Semasa - Kebocoran Terbalik @ Vr: 1µA @ 1V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZV55B43 L1G
Taiwan Semiconductor Corporation

BZV55B43 L1G

bahagian bahagian: 191

Voltan - Zener (Nom) (Vz): 43V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 90 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 32V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 100mA,

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BZV55B3V3 L1G
Taiwan Semiconductor Corporation

BZV55B3V3 L1G

bahagian bahagian: 180

Voltan - Zener (Nom) (Vz): 3.3V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 85 Ohms, Semasa - Kebocoran Terbalik @ Vr: 2µA @ 1V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 100mA,

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BZX85C20 R0G
Taiwan Semiconductor Corporation

BZX85C20 R0G

bahagian bahagian: 196

Voltan - Zener (Nom) (Vz): 20V, Toleransi: ±5%, Kuasa - Maks: 1.3W, Impedans (Maks) (Zzt): 24 Ohms, Semasa - Kebocoran Terbalik @ Vr: 500nA @ 15V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 10mA,

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BZV55B5V6 L1G
Taiwan Semiconductor Corporation

BZV55B5V6 L1G

bahagian bahagian: 209

Voltan - Zener (Nom) (Vz): 5.6V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 25 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 1V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 100mA,

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BZT55B24 L1G
Taiwan Semiconductor Corporation

BZT55B24 L1G

bahagian bahagian: 205

Voltan - Zener (Nom) (Vz): 24V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 80 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 18V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZT55B18 L1G
Taiwan Semiconductor Corporation

BZT55B18 L1G

bahagian bahagian: 184

Voltan - Zener (Nom) (Vz): 18V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 50 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 13V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZX85C16 R0G
Taiwan Semiconductor Corporation

BZX85C16 R0G

bahagian bahagian: 202

Voltan - Zener (Nom) (Vz): 16V, Toleransi: ±5%, Kuasa - Maks: 1.3W, Impedans (Maks) (Zzt): 15 Ohms, Semasa - Kebocoran Terbalik @ Vr: 500nA @ 12V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 10mA,

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BZV55C5V6 L0G
Taiwan Semiconductor Corporation

BZV55C5V6 L0G

bahagian bahagian: 203

Voltan - Zener (Nom) (Vz): 5.6V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 25 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 1V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZT55B16 L1G
Taiwan Semiconductor Corporation

BZT55B16 L1G

bahagian bahagian: 173

Voltan - Zener (Nom) (Vz): 16V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 40 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 12V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZT55C3V3 L1G
Taiwan Semiconductor Corporation

BZT55C3V3 L1G

bahagian bahagian: 217

Voltan - Zener (Nom) (Vz): 3.3V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 85 Ohms, Semasa - Kebocoran Terbalik @ Vr: 2µA @ 1V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZT55C24 L1G
Taiwan Semiconductor Corporation

BZT55C24 L1G

bahagian bahagian: 220

Voltan - Zener (Nom) (Vz): 24V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 80 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 18V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZT55B2V4 L1G
Taiwan Semiconductor Corporation

BZT55B2V4 L1G

bahagian bahagian: 233

Voltan - Zener (Nom) (Vz): 2.4V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 85 Ohms, Semasa - Kebocoran Terbalik @ Vr: 50µA @ 1V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZV55C36 L0G
Taiwan Semiconductor Corporation

BZV55C36 L0G

bahagian bahagian: 205

Voltan - Zener (Nom) (Vz): 36V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 80 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 27V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZV55C2V7 L0G
Taiwan Semiconductor Corporation

BZV55C2V7 L0G

bahagian bahagian: 158

Voltan - Zener (Nom) (Vz): 2.7V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 85 Ohms, Semasa - Kebocoran Terbalik @ Vr: 10µA @ 1V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZX85C8V2 R0G
Taiwan Semiconductor Corporation

BZX85C8V2 R0G

bahagian bahagian: 155

Voltan - Zener (Nom) (Vz): 8.2V, Toleransi: ±5%, Kuasa - Maks: 1.3W, Impedans (Maks) (Zzt): 5 Ohms, Semasa - Kebocoran Terbalik @ Vr: 1µA @ 6.2V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 10mA,

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BZV55C6V2 L1G
Taiwan Semiconductor Corporation

BZV55C6V2 L1G

bahagian bahagian: 181

Voltan - Zener (Nom) (Vz): 6.2V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 10 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 2V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZT55B12 L1G
Taiwan Semiconductor Corporation

BZT55B12 L1G

bahagian bahagian: 208

Voltan - Zener (Nom) (Vz): 12V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 20 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 9.1V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZT55B3V0 L1G
Taiwan Semiconductor Corporation

BZT55B3V0 L1G

bahagian bahagian: 233

Voltan - Zener (Nom) (Vz): 3V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 85 Ohms, Semasa - Kebocoran Terbalik @ Vr: 4µA @ 1V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZV55C3V9 L0G
Taiwan Semiconductor Corporation

BZV55C3V9 L0G

bahagian bahagian: 170

Voltan - Zener (Nom) (Vz): 3.9V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 85 Ohms, Semasa - Kebocoran Terbalik @ Vr: 2µA @ 1V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZV55B3V6 L0G
Taiwan Semiconductor Corporation

BZV55B3V6 L0G

bahagian bahagian: 197

Voltan - Zener (Nom) (Vz): 3.6V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 85 Ohms, Semasa - Kebocoran Terbalik @ Vr: 2µA @ 1V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 100mA,

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BZV55B4V3 L1G
Taiwan Semiconductor Corporation

BZV55B4V3 L1G

bahagian bahagian: 248

Voltan - Zener (Nom) (Vz): 4.3V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 75 Ohms, Semasa - Kebocoran Terbalik @ Vr: 1µA @ 1V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 100mA,

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BZV55C62 L1G
Taiwan Semiconductor Corporation

BZV55C62 L1G

bahagian bahagian: 210

Voltan - Zener (Nom) (Vz): 62V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 150 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 47V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZV55B10 L1G
Taiwan Semiconductor Corporation

BZV55B10 L1G

bahagian bahagian: 164

Voltan - Zener (Nom) (Vz): 10V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 15 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 7.5V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 100mA,

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BZV55C6V8 L0G
Taiwan Semiconductor Corporation

BZV55C6V8 L0G

bahagian bahagian: 190

Voltan - Zener (Nom) (Vz): 6.8V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 8 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 3V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZT55B2V7 L1G
Taiwan Semiconductor Corporation

BZT55B2V7 L1G

bahagian bahagian: 235

Voltan - Zener (Nom) (Vz): 2.7V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 85 Ohms, Semasa - Kebocoran Terbalik @ Vr: 10µA @ 1V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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