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Diod - Zener - Bujang

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BZT55C3V9 L1G
Taiwan Semiconductor Corporation

BZT55C3V9 L1G

bahagian bahagian: 246

Voltan - Zener (Nom) (Vz): 3.9V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 85 Ohms, Semasa - Kebocoran Terbalik @ Vr: 2µA @ 1V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZV55C68 L1G
Taiwan Semiconductor Corporation

BZV55C68 L1G

bahagian bahagian: 253

Voltan - Zener (Nom) (Vz): 68V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 160 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 51V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZV55C7V5 L0G
Taiwan Semiconductor Corporation

BZV55C7V5 L0G

bahagian bahagian: 209

Voltan - Zener (Nom) (Vz): 7.5V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 7 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 5V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZV55B62 L1G
Taiwan Semiconductor Corporation

BZV55B62 L1G

bahagian bahagian: 183

Voltan - Zener (Nom) (Vz): 62V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 150 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 47V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 100mA,

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BZX85C7V5 R0G
Taiwan Semiconductor Corporation

BZX85C7V5 R0G

bahagian bahagian: 250

Voltan - Zener (Nom) (Vz): 7.5V, Toleransi: ±5%, Kuasa - Maks: 1.3W, Impedans (Maks) (Zzt): 3 Ohms, Semasa - Kebocoran Terbalik @ Vr: 1µA @ 4.5V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 10mA,

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BZT55B36 L1G
Taiwan Semiconductor Corporation

BZT55B36 L1G

bahagian bahagian: 185

Voltan - Zener (Nom) (Vz): 36V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 80 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 27V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZX85C3V6 R0G
Taiwan Semiconductor Corporation

BZX85C3V6 R0G

bahagian bahagian: 214

Voltan - Zener (Nom) (Vz): 3.6V, Toleransi: ±5%, Kuasa - Maks: 1.3W, Impedans (Maks) (Zzt): 20 Ohms, Semasa - Kebocoran Terbalik @ Vr: 20µA @ 1V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 10mA,

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BZV55C5V1 L0G
Taiwan Semiconductor Corporation

BZV55C5V1 L0G

bahagian bahagian: 195

Voltan - Zener (Nom) (Vz): 5.1V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 35 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 1V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZT55C3V6 L1G
Taiwan Semiconductor Corporation

BZT55C3V6 L1G

bahagian bahagian: 210

Voltan - Zener (Nom) (Vz): 3.6V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 85 Ohms, Semasa - Kebocoran Terbalik @ Vr: 2µA @ 1V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZV55B12 L0G
Taiwan Semiconductor Corporation

BZV55B12 L0G

bahagian bahagian: 197

Voltan - Zener (Nom) (Vz): 12V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 20 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 9.1V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 100mA,

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BZV55C5V6 L1G
Taiwan Semiconductor Corporation

BZV55C5V6 L1G

bahagian bahagian: 179

Voltan - Zener (Nom) (Vz): 5.6V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 25 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 1V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZX85C33 R0G
Taiwan Semiconductor Corporation

BZX85C33 R0G

bahagian bahagian: 182

Voltan - Zener (Nom) (Vz): 33V, Toleransi: ±5%, Kuasa - Maks: 1.3W, Impedans (Maks) (Zzt): 35 Ohms, Semasa - Kebocoran Terbalik @ Vr: 500nA @ 24V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 10mA,

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BZX85C5V1 R0G
Taiwan Semiconductor Corporation

BZX85C5V1 R0G

bahagian bahagian: 160

Voltan - Zener (Nom) (Vz): 5.1V, Toleransi: ±5%, Kuasa - Maks: 1.3W, Impedans (Maks) (Zzt): 10 Ohms, Semasa - Kebocoran Terbalik @ Vr: 1µA @ 1.5V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 10mA,

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BZV55B8V2 L0G
Taiwan Semiconductor Corporation

BZV55B8V2 L0G

bahagian bahagian: 193

Voltan - Zener (Nom) (Vz): 8.2V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 7 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 6.2V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 100mA,

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BZV55B5V6 L0G
Taiwan Semiconductor Corporation

BZV55B5V6 L0G

bahagian bahagian: 176

Voltan - Zener (Nom) (Vz): 5.6V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 25 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 1V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 100mA,

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BZV55C4V7 L0G
Taiwan Semiconductor Corporation

BZV55C4V7 L0G

bahagian bahagian: 228

Voltan - Zener (Nom) (Vz): 4.7V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 60 Ohms, Semasa - Kebocoran Terbalik @ Vr: 500nA @ 1V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZV55C3V3 L0G
Taiwan Semiconductor Corporation

BZV55C3V3 L0G

bahagian bahagian: 169

Voltan - Zener (Nom) (Vz): 3.3V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 85 Ohms, Semasa - Kebocoran Terbalik @ Vr: 2µA @ 1V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZV55C22 L0G
Taiwan Semiconductor Corporation

BZV55C22 L0G

bahagian bahagian: 196

Voltan - Zener (Nom) (Vz): 22V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 55 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 16V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZT55B15 L1G
Taiwan Semiconductor Corporation

BZT55B15 L1G

bahagian bahagian: 210

Voltan - Zener (Nom) (Vz): 15V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 30 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 11V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZT55C30 L1G
Taiwan Semiconductor Corporation

BZT55C30 L1G

bahagian bahagian: 233

Voltan - Zener (Nom) (Vz): 30V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 80 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 22V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZV55C7V5 L1G
Taiwan Semiconductor Corporation

BZV55C7V5 L1G

bahagian bahagian: 160

Voltan - Zener (Nom) (Vz): 7.5V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 7 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 5V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZT55C51 L1G
Taiwan Semiconductor Corporation

BZT55C51 L1G

bahagian bahagian: 235

Voltan - Zener (Nom) (Vz): 51V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 125 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 38V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZT55B6V2 L1G
Taiwan Semiconductor Corporation

BZT55B6V2 L1G

bahagian bahagian: 223

Voltan - Zener (Nom) (Vz): 6.2V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 10 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 2V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZX85C30 R0G
Taiwan Semiconductor Corporation

BZX85C30 R0G

bahagian bahagian: 213

Voltan - Zener (Nom) (Vz): 30V, Toleransi: ±5%, Kuasa - Maks: 1.3W, Impedans (Maks) (Zzt): 30 Ohms, Semasa - Kebocoran Terbalik @ Vr: 500nA @ 22V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 10mA,

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BZV55C3V0 L0G
Taiwan Semiconductor Corporation

BZV55C3V0 L0G

bahagian bahagian: 166

Voltan - Zener (Nom) (Vz): 3V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 85 Ohms, Semasa - Kebocoran Terbalik @ Vr: 4µA @ 1V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZV55C12 L0G
Taiwan Semiconductor Corporation

BZV55C12 L0G

bahagian bahagian: 159

Voltan - Zener (Nom) (Vz): 12V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 20 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 9.1V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZV55C4V3 L1G
Taiwan Semiconductor Corporation

BZV55C4V3 L1G

bahagian bahagian: 156

Voltan - Zener (Nom) (Vz): 4.3V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 75 Ohms, Semasa - Kebocoran Terbalik @ Vr: 1µA @ 1V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZV55B5V1 L1G
Taiwan Semiconductor Corporation

BZV55B5V1 L1G

bahagian bahagian: 240

Voltan - Zener (Nom) (Vz): 5.1V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 35 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 1V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 100mA,

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BZT55B27 L1G
Taiwan Semiconductor Corporation

BZT55B27 L1G

bahagian bahagian: 159

Voltan - Zener (Nom) (Vz): 27V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 80 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 20V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

Senarai harapan
BZV55B15 L1G
Taiwan Semiconductor Corporation

BZV55B15 L1G

bahagian bahagian: 160

Voltan - Zener (Nom) (Vz): 15V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 30 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 11V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 100mA,

Senarai harapan
BZX85C39 R0G
Taiwan Semiconductor Corporation

BZX85C39 R0G

bahagian bahagian: 173

Voltan - Zener (Nom) (Vz): 39V, Toleransi: ±5%, Kuasa - Maks: 1.3W, Impedans (Maks) (Zzt): 45 Ohms, Semasa - Kebocoran Terbalik @ Vr: 500nA @ 27V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 10mA,

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BZX85C51 R0G
Taiwan Semiconductor Corporation

BZX85C51 R0G

bahagian bahagian: 249

Voltan - Zener (Nom) (Vz): 51V, Toleransi: ±5%, Kuasa - Maks: 1.3W, Impedans (Maks) (Zzt): 115 Ohms, Semasa - Kebocoran Terbalik @ Vr: 500nA @ 36V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 10mA,

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BZT55C56 L1G
Taiwan Semiconductor Corporation

BZT55C56 L1G

bahagian bahagian: 231

Voltan - Zener (Nom) (Vz): 56V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 135 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 42V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZV55B27 L0G
Taiwan Semiconductor Corporation

BZV55B27 L0G

bahagian bahagian: 216

Voltan - Zener (Nom) (Vz): 27V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 80 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 20V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 100mA,

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BZV55C2V4 L1G
Taiwan Semiconductor Corporation

BZV55C2V4 L1G

bahagian bahagian: 158

Voltan - Zener (Nom) (Vz): 2.4V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 85 Ohms, Semasa - Kebocoran Terbalik @ Vr: 50µA @ 1V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZV55C51 L0G
Taiwan Semiconductor Corporation

BZV55C51 L0G

bahagian bahagian: 253

Voltan - Zener (Nom) (Vz): 51V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 125 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 38V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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