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Diod - Zener - Bujang

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  • Diod - Zener - Bujang
BZV55C56 L0G
Taiwan Semiconductor Corporation

BZV55C56 L0G

bahagian bahagian: 193

Voltan - Zener (Nom) (Vz): 56V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 135 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 42V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZV55B62 L0G
Taiwan Semiconductor Corporation

BZV55B62 L0G

bahagian bahagian: 167

Voltan - Zener (Nom) (Vz): 62V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 150 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 47V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 100mA,

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BZV55B4V7 L1G
Taiwan Semiconductor Corporation

BZV55B4V7 L1G

bahagian bahagian: 181

Voltan - Zener (Nom) (Vz): 4.7V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 60 Ohms, Semasa - Kebocoran Terbalik @ Vr: 500nA @ 1V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 100mA,

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BZV55B56 L0G
Taiwan Semiconductor Corporation

BZV55B56 L0G

bahagian bahagian: 216

Voltan - Zener (Nom) (Vz): 56V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 135 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 42V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 100mA,

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BZT55C6V8 L1G
Taiwan Semiconductor Corporation

BZT55C6V8 L1G

bahagian bahagian: 181

Voltan - Zener (Nom) (Vz): 6.8V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 8 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 3V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZT55C33 L1G
Taiwan Semiconductor Corporation

BZT55C33 L1G

bahagian bahagian: 189

Voltan - Zener (Nom) (Vz): 33V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 80 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 24V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZV55B33 L1G
Taiwan Semiconductor Corporation

BZV55B33 L1G

bahagian bahagian: 193

Voltan - Zener (Nom) (Vz): 33V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 80 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 24V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 100mA,

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BZX85C15 R0G
Taiwan Semiconductor Corporation

BZX85C15 R0G

bahagian bahagian: 206

Voltan - Zener (Nom) (Vz): 15V, Toleransi: ±5%, Kuasa - Maks: 1.3W, Impedans (Maks) (Zzt): 15 Ohms, Semasa - Kebocoran Terbalik @ Vr: 500nA @ 11V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 10mA,

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BZV55B22 L0G
Taiwan Semiconductor Corporation

BZV55B22 L0G

bahagian bahagian: 216

Voltan - Zener (Nom) (Vz): 22V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 55 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 16V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 100mA,

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BZV55C62 L0G
Taiwan Semiconductor Corporation

BZV55C62 L0G

bahagian bahagian: 212

Voltan - Zener (Nom) (Vz): 62V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 150 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 47V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZT55C8V2 L1G
Taiwan Semiconductor Corporation

BZT55C8V2 L1G

bahagian bahagian: 245

Voltan - Zener (Nom) (Vz): 8.2V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 7 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 6.2V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZT55C36 L1G
Taiwan Semiconductor Corporation

BZT55C36 L1G

bahagian bahagian: 188

Voltan - Zener (Nom) (Vz): 36V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 80 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 27V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZV55C56 L1G
Taiwan Semiconductor Corporation

BZV55C56 L1G

bahagian bahagian: 183

Voltan - Zener (Nom) (Vz): 56V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 135 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 42V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZV55B47 L1G
Taiwan Semiconductor Corporation

BZV55B47 L1G

bahagian bahagian: 208

Voltan - Zener (Nom) (Vz): 47V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 110 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 35V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 100mA,

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BZV55B9V1 L0G
Taiwan Semiconductor Corporation

BZV55B9V1 L0G

bahagian bahagian: 181

Voltan - Zener (Nom) (Vz): 9.1V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 10 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 6.8V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 100mA,

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BZV55C16 L0G
Taiwan Semiconductor Corporation

BZV55C16 L0G

bahagian bahagian: 217

Voltan - Zener (Nom) (Vz): 16V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 40 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 12V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZV55C30 L0G
Taiwan Semiconductor Corporation

BZV55C30 L0G

bahagian bahagian: 168

Voltan - Zener (Nom) (Vz): 30V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 80 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 22V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZX85C3V3 R0G
Taiwan Semiconductor Corporation

BZX85C3V3 R0G

bahagian bahagian: 226

Voltan - Zener (Nom) (Vz): 3.3V, Toleransi: ±5%, Kuasa - Maks: 1.3W, Impedans (Maks) (Zzt): 20 Ohms, Semasa - Kebocoran Terbalik @ Vr: 40µA @ 1V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 10mA,

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BZV55B6V2 L1G
Taiwan Semiconductor Corporation

BZV55B6V2 L1G

bahagian bahagian: 165

Voltan - Zener (Nom) (Vz): 6.2V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 10 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 2V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 100mA,

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BZV55B20 L1G
Taiwan Semiconductor Corporation

BZV55B20 L1G

bahagian bahagian: 163

Voltan - Zener (Nom) (Vz): 20V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 55 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 15V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 100mA,

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BZT55B75 L1G
Taiwan Semiconductor Corporation

BZT55B75 L1G

bahagian bahagian: 177

Voltan - Zener (Nom) (Vz): 75V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 170 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 56V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZT55B3V3 L1G
Taiwan Semiconductor Corporation

BZT55B3V3 L1G

bahagian bahagian: 198

Voltan - Zener (Nom) (Vz): 3.3V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 85 Ohms, Semasa - Kebocoran Terbalik @ Vr: 2µA @ 1V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZT55B3V6 L1G
Taiwan Semiconductor Corporation

BZT55B3V6 L1G

bahagian bahagian: 216

Voltan - Zener (Nom) (Vz): 3.6V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 85 Ohms, Semasa - Kebocoran Terbalik @ Vr: 2µA @ 1V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZV55B5V1 L0G
Taiwan Semiconductor Corporation

BZV55B5V1 L0G

bahagian bahagian: 185

Voltan - Zener (Nom) (Vz): 5.1V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 35 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 1V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 100mA,

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BZV55C9V1 L0G
Taiwan Semiconductor Corporation

BZV55C9V1 L0G

bahagian bahagian: 191

Voltan - Zener (Nom) (Vz): 9.1V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 10 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 6.8V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZX85C24 R0G
Taiwan Semiconductor Corporation

BZX85C24 R0G

bahagian bahagian: 201

Voltan - Zener (Nom) (Vz): 24V, Toleransi: ±5%, Kuasa - Maks: 1.3W, Impedans (Maks) (Zzt): 25 Ohms, Semasa - Kebocoran Terbalik @ Vr: 500nA @ 18V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 10mA,

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BZV55C4V7 L1G
Taiwan Semiconductor Corporation

BZV55C4V7 L1G

bahagian bahagian: 234

Voltan - Zener (Nom) (Vz): 4.7V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 60 Ohms, Semasa - Kebocoran Terbalik @ Vr: 500nA @ 1V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZV55B39 L0G
Taiwan Semiconductor Corporation

BZV55B39 L0G

bahagian bahagian: 155

Voltan - Zener (Nom) (Vz): 39V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 90 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 28V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 100mA,

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BZV55B36 L1G
Taiwan Semiconductor Corporation

BZV55B36 L1G

bahagian bahagian: 161

Voltan - Zener (Nom) (Vz): 36V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 80 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 27V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 100mA,

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BZV55C20 L1G
Taiwan Semiconductor Corporation

BZV55C20 L1G

bahagian bahagian: 241

Voltan - Zener (Nom) (Vz): 20V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 55 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 15V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZT55B8V2 L1G
Taiwan Semiconductor Corporation

BZT55B8V2 L1G

bahagian bahagian: 181

Voltan - Zener (Nom) (Vz): 8.2V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 7 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 6.2V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZV55C3V6 L1G
Taiwan Semiconductor Corporation

BZV55C3V6 L1G

bahagian bahagian: 217

Voltan - Zener (Nom) (Vz): 3.6V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 85 Ohms, Semasa - Kebocoran Terbalik @ Vr: 2µA @ 1V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZV55B6V8 L0G
Taiwan Semiconductor Corporation

BZV55B6V8 L0G

bahagian bahagian: 240

Voltan - Zener (Nom) (Vz): 6.8V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 8 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 3V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 100mA,

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BZV55C11 L0G
Taiwan Semiconductor Corporation

BZV55C11 L0G

bahagian bahagian: 235

Voltan - Zener (Nom) (Vz): 11V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 20 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 8.2V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZV55B3V3 L0G
Taiwan Semiconductor Corporation

BZV55B3V3 L0G

bahagian bahagian: 179

Voltan - Zener (Nom) (Vz): 3.3V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 85 Ohms, Semasa - Kebocoran Terbalik @ Vr: 2µA @ 1V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 100mA,

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BZV55C36 L1G
Taiwan Semiconductor Corporation

BZV55C36 L1G

bahagian bahagian: 220

Voltan - Zener (Nom) (Vz): 36V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 80 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 27V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

Senarai harapan