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Diod - Zener - Bujang

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  • Diod - Zener - Bujang
BZV55C18 L0G
Taiwan Semiconductor Corporation

BZV55C18 L0G

bahagian bahagian: 245

Voltan - Zener (Nom) (Vz): 18V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 50 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 13V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZV55C13 L1G
Taiwan Semiconductor Corporation

BZV55C13 L1G

bahagian bahagian: 174

Voltan - Zener (Nom) (Vz): 13V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 26 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 10V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZT55B39 L1G
Taiwan Semiconductor Corporation

BZT55B39 L1G

bahagian bahagian: 244

Voltan - Zener (Nom) (Vz): 39V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 90 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 28V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZV55B27 L1G
Taiwan Semiconductor Corporation

BZV55B27 L1G

bahagian bahagian: 210

Voltan - Zener (Nom) (Vz): 27V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 80 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 20V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 100mA,

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BZV55C43 L0G
Taiwan Semiconductor Corporation

BZV55C43 L0G

bahagian bahagian: 162

Voltan - Zener (Nom) (Vz): 43V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 90 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 32V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZV55B10 L0G
Taiwan Semiconductor Corporation

BZV55B10 L0G

bahagian bahagian: 247

Voltan - Zener (Nom) (Vz): 10V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 15 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 7.5V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 100mA,

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BZV55C27 L1G
Taiwan Semiconductor Corporation

BZV55C27 L1G

bahagian bahagian: 177

Voltan - Zener (Nom) (Vz): 27V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 80 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 20V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZV55C30 L1G
Taiwan Semiconductor Corporation

BZV55C30 L1G

bahagian bahagian: 158

Voltan - Zener (Nom) (Vz): 30V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 80 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 22V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZV55B68 L1G
Taiwan Semiconductor Corporation

BZV55B68 L1G

bahagian bahagian: 196

Voltan - Zener (Nom) (Vz): 68V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 160 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 51V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 100mA,

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BZT55C10 L1G
Taiwan Semiconductor Corporation

BZT55C10 L1G

bahagian bahagian: 215

Voltan - Zener (Nom) (Vz): 10V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 15 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 7.5V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZV55B9V1 L1G
Taiwan Semiconductor Corporation

BZV55B9V1 L1G

bahagian bahagian: 230

Voltan - Zener (Nom) (Vz): 9.1V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 10 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 6.8V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 100mA,

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BZX85C6V2 R0G
Taiwan Semiconductor Corporation

BZX85C6V2 R0G

bahagian bahagian: 160

Voltan - Zener (Nom) (Vz): 6.2V, Toleransi: ±5%, Kuasa - Maks: 1.3W, Impedans (Maks) (Zzt): 4 Ohms, Semasa - Kebocoran Terbalik @ Vr: 1µA @ 3V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 10mA,

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BZV55B12 L1G
Taiwan Semiconductor Corporation

BZV55B12 L1G

bahagian bahagian: 230

Voltan - Zener (Nom) (Vz): 12V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 20 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 9.1V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 100mA,

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BZT55C43 L1G
Taiwan Semiconductor Corporation

BZT55C43 L1G

bahagian bahagian: 218

Voltan - Zener (Nom) (Vz): 43V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 90 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 32V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZV55C6V2 L0G
Taiwan Semiconductor Corporation

BZV55C6V2 L0G

bahagian bahagian: 169

Voltan - Zener (Nom) (Vz): 6.2V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 10 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 2V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZV55B56 L1G
Taiwan Semiconductor Corporation

BZV55B56 L1G

bahagian bahagian: 208

Voltan - Zener (Nom) (Vz): 56V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 135 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 42V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 100mA,

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BZT55C2V4 L1G
Taiwan Semiconductor Corporation

BZT55C2V4 L1G

bahagian bahagian: 164

Voltan - Zener (Nom) (Vz): 2.4V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 85 Ohms, Semasa - Kebocoran Terbalik @ Vr: 50µA @ 1V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZV55C75 L0G
Taiwan Semiconductor Corporation

BZV55C75 L0G

bahagian bahagian: 208

Voltan - Zener (Nom) (Vz): 75V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 170 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 56V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZT55B20 L1G
Taiwan Semiconductor Corporation

BZT55B20 L1G

bahagian bahagian: 177

Voltan - Zener (Nom) (Vz): 20V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 55 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 15V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZT55B7V5 L1G
Taiwan Semiconductor Corporation

BZT55B7V5 L1G

bahagian bahagian: 154

Voltan - Zener (Nom) (Vz): 7.5V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 7 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 5V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZT55B6V8 L1G
Taiwan Semiconductor Corporation

BZT55B6V8 L1G

bahagian bahagian: 218

Voltan - Zener (Nom) (Vz): 6.8V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 8 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 3V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZX85C4V7 R0G
Taiwan Semiconductor Corporation

BZX85C4V7 R0G

bahagian bahagian: 201

Voltan - Zener (Nom) (Vz): 4.7V, Toleransi: ±5%, Kuasa - Maks: 1.3W, Impedans (Maks) (Zzt): 13 Ohms, Semasa - Kebocoran Terbalik @ Vr: 3µA @ 1V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 10mA,

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BZT55C16 L1G
Taiwan Semiconductor Corporation

BZT55C16 L1G

bahagian bahagian: 169

Voltan - Zener (Nom) (Vz): 16V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 40 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 12V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZT55B56 L1G
Taiwan Semiconductor Corporation

BZT55B56 L1G

bahagian bahagian: 205

Voltan - Zener (Nom) (Vz): 56V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 135 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 42V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZV55B39 L1G
Taiwan Semiconductor Corporation

BZV55B39 L1G

bahagian bahagian: 248

Voltan - Zener (Nom) (Vz): 39V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 90 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 28V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 100mA,

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BZV55C51 L1G
Taiwan Semiconductor Corporation

BZV55C51 L1G

bahagian bahagian: 214

Voltan - Zener (Nom) (Vz): 51V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 125 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 38V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZV55B20 L0G
Taiwan Semiconductor Corporation

BZV55B20 L0G

bahagian bahagian: 243

Voltan - Zener (Nom) (Vz): 20V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 55 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 15V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 100mA,

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BZV55B2V4 L0G
Taiwan Semiconductor Corporation

BZV55B2V4 L0G

bahagian bahagian: 157

Voltan - Zener (Nom) (Vz): 2.4V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 85 Ohms, Semasa - Kebocoran Terbalik @ Vr: 50µA @ 1V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 100mA,

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BZV55C10 L0G
Taiwan Semiconductor Corporation

BZV55C10 L0G

bahagian bahagian: 175

Voltan - Zener (Nom) (Vz): 10V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 15 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 7.5V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZV55C2V7 L1G
Taiwan Semiconductor Corporation

BZV55C2V7 L1G

bahagian bahagian: 247

Voltan - Zener (Nom) (Vz): 2.7V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 85 Ohms, Semasa - Kebocoran Terbalik @ Vr: 10µA @ 1V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZT55C4V7 L1G
Taiwan Semiconductor Corporation

BZT55C4V7 L1G

bahagian bahagian: 246

Voltan - Zener (Nom) (Vz): 4.7V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 60 Ohms, Semasa - Kebocoran Terbalik @ Vr: 500nA @ 1V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZV55B24 L1G
Taiwan Semiconductor Corporation

BZV55B24 L1G

bahagian bahagian: 181

Voltan - Zener (Nom) (Vz): 24V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 80 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 18V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 100mA,

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BZV55C18 L1G
Taiwan Semiconductor Corporation

BZV55C18 L1G

bahagian bahagian: 197

Voltan - Zener (Nom) (Vz): 18V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 50 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 13V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZV55B36 L0G
Taiwan Semiconductor Corporation

BZV55B36 L0G

bahagian bahagian: 216

Voltan - Zener (Nom) (Vz): 36V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 80 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 27V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 100mA,

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BZV55C10 L1G
Taiwan Semiconductor Corporation

BZV55C10 L1G

bahagian bahagian: 228

Voltan - Zener (Nom) (Vz): 10V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 15 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 7.5V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZT55B62 L1G
Taiwan Semiconductor Corporation

BZT55B62 L1G

bahagian bahagian: 164

Voltan - Zener (Nom) (Vz): 62V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 150 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 47V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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