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Diod - Zener - Bujang

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  • Diod - Zener - Bujang
BZX84C11 RFG
Taiwan Semiconductor Corporation

BZX84C11 RFG

bahagian bahagian: 250

Voltan - Zener (Nom) (Vz): 11V, Toleransi: ±5%, Kuasa - Maks: 300mW, Impedans (Maks) (Zzt): 20 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 8V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 900mV @ 10mA,

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BZT52C62S RRG
Taiwan Semiconductor Corporation

BZT52C62S RRG

bahagian bahagian: 180

Voltan - Zener (Nom) (Vz): 62V, Toleransi: ±5%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 215 Ohms, Semasa - Kebocoran Terbalik @ Vr: 45nA @ 43.4V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZT52B62S RRG
Taiwan Semiconductor Corporation

BZT52B62S RRG

bahagian bahagian: 209

Voltan - Zener (Nom) (Vz): 62V, Toleransi: ±2%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 215 Ohms, Semasa - Kebocoran Terbalik @ Vr: 45nA @ 43.4V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZT52C3V6K RKG
Taiwan Semiconductor Corporation

BZT52C3V6K RKG

bahagian bahagian: 257

Voltan - Zener (Nom) (Vz): 3.6V, Toleransi: ±5%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 90 Ohms, Semasa - Kebocoran Terbalik @ Vr: 10µA @ 1V,

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BZT52C2V4S RRG
Taiwan Semiconductor Corporation

BZT52C2V4S RRG

bahagian bahagian: 177

Voltan - Zener (Nom) (Vz): 2.4V, Toleransi: ±5%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 100 Ohms, Semasa - Kebocoran Terbalik @ Vr: 45µA @ 1V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZT52B30 RHG
Taiwan Semiconductor Corporation

BZT52B30 RHG

bahagian bahagian: 169

Voltan - Zener (Nom) (Vz): 30V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 80 Ohms, Semasa - Kebocoran Terbalik @ Vr: 45nA @ 21V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZT52C36K RKG
Taiwan Semiconductor Corporation

BZT52C36K RKG

bahagian bahagian: 204

Voltan - Zener (Nom) (Vz): 36V, Toleransi: ±5%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 90 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 27V,

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BZT52C43 RHG
Taiwan Semiconductor Corporation

BZT52C43 RHG

bahagian bahagian: 241

Voltan - Zener (Nom) (Vz): 43V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 150 Ohms, Semasa - Kebocoran Terbalik @ Vr: 45nA @ 30.1V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZX84C7V5 RFG
Taiwan Semiconductor Corporation

BZX84C7V5 RFG

bahagian bahagian: 238

Voltan - Zener (Nom) (Vz): 7.5V, Toleransi: ±5%, Kuasa - Maks: 300mW, Impedans (Maks) (Zzt): 15 Ohms, Semasa - Kebocoran Terbalik @ Vr: 1µA @ 5V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 900mV @ 10mA,

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BZX84C18 RFG
Taiwan Semiconductor Corporation

BZX84C18 RFG

bahagian bahagian: 179

Voltan - Zener (Nom) (Vz): 18V, Toleransi: ±5%, Kuasa - Maks: 300mW, Impedans (Maks) (Zzt): 45 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 12.6V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 900mV @ 10mA,

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BZT52B16-G RHG
Taiwan Semiconductor Corporation

BZT52B16-G RHG

bahagian bahagian: 214

Voltan - Zener (Nom) (Vz): 16V, Toleransi: ±2%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 40 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 11.2V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 900mV @ 10mA,

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BZX584B5V6 RSG
Taiwan Semiconductor Corporation

BZX584B5V6 RSG

bahagian bahagian: 193

Voltan - Zener (Nom) (Vz): 5.6V, Toleransi: ±2%, Kuasa - Maks: 150mW, Impedans (Maks) (Zzt): 40 Ohms, Semasa - Kebocoran Terbalik @ Vr: 1µA @ 2V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 900mV @ 10mA,

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BZT52C75K RKG
Taiwan Semiconductor Corporation

BZT52C75K RKG

bahagian bahagian: 230

Voltan - Zener (Nom) (Vz): 75V, Toleransi: ±5%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 255 Ohms, Semasa - Kebocoran Terbalik @ Vr: 200nA @ 57V,

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BZT52C68K RKG
Taiwan Semiconductor Corporation

BZT52C68K RKG

bahagian bahagian: 180

Voltan - Zener (Nom) (Vz): 68V, Toleransi: ±5%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 240 Ohms, Semasa - Kebocoran Terbalik @ Vr: 200nA @ 52V,

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BZT52B7V5S RRG
Taiwan Semiconductor Corporation

BZT52B7V5S RRG

bahagian bahagian: 234

Voltan - Zener (Nom) (Vz): 7.5V, Toleransi: ±2%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 15 Ohms, Semasa - Kebocoran Terbalik @ Vr: 900nA @ 5V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZX584B6V2 RSG
Taiwan Semiconductor Corporation

BZX584B6V2 RSG

bahagian bahagian: 210

Voltan - Zener (Nom) (Vz): 6.2V, Toleransi: ±2%, Kuasa - Maks: 150mW, Impedans (Maks) (Zzt): 10 Ohms, Semasa - Kebocoran Terbalik @ Vr: 3µA @ 4V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 900mV @ 10mA,

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BZT52C5V6K RKG
Taiwan Semiconductor Corporation

BZT52C5V6K RKG

bahagian bahagian: 171

Voltan - Zener (Nom) (Vz): 5.6V, Toleransi: ±5%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 40 Ohms, Semasa - Kebocoran Terbalik @ Vr: 1µA @ 2.5V,

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BZT52B47S RRG
Taiwan Semiconductor Corporation

BZT52B47S RRG

bahagian bahagian: 248

Voltan - Zener (Nom) (Vz): 47V, Toleransi: ±2%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 170 Ohms, Semasa - Kebocoran Terbalik @ Vr: 45nA @ 33V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZT52B6V8-G RHG
Taiwan Semiconductor Corporation

BZT52B6V8-G RHG

bahagian bahagian: 247

Voltan - Zener (Nom) (Vz): 6.8V, Toleransi: ±2%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 15 Ohms, Semasa - Kebocoran Terbalik @ Vr: 2µA @ 4V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 900mV @ 10mA,

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BZX84C15 RFG
Taiwan Semiconductor Corporation

BZX84C15 RFG

bahagian bahagian: 194

Voltan - Zener (Nom) (Vz): 15V, Toleransi: ±5%, Kuasa - Maks: 300mW, Impedans (Maks) (Zzt): 30 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 10.5V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 900mV @ 10mA,

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BZT52C47S RRG
Taiwan Semiconductor Corporation

BZT52C47S RRG

bahagian bahagian: 176

Voltan - Zener (Nom) (Vz): 47V, Toleransi: ±5%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 170 Ohms, Semasa - Kebocoran Terbalik @ Vr: 45nA @ 33V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZT52B2V4S RRG
Taiwan Semiconductor Corporation

BZT52B2V4S RRG

bahagian bahagian: 195

Voltan - Zener (Nom) (Vz): 2.4V, Toleransi: ±2%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 100 Ohms, Semasa - Kebocoran Terbalik @ Vr: 45µA @ 1V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZD27C24P RQG
Taiwan Semiconductor Corporation

BZD27C24P RQG

bahagian bahagian: 225

Voltan - Zener (Nom) (Vz): 24.2V, Toleransi: ±5.78%, Kuasa - Maks: 1W, Impedans (Maks) (Zzt): 15 Ohms, Semasa - Kebocoran Terbalik @ Vr: 1µA @ 18V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 200mA,

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BZD27C220P RQG
Taiwan Semiconductor Corporation

BZD27C220P RQG

bahagian bahagian: 203

Voltan - Zener (Nom) (Vz): 220.5V, Toleransi: ±5.66%, Kuasa - Maks: 1W, Impedans (Maks) (Zzt): 900 Ohms, Semasa - Kebocoran Terbalik @ Vr: 1µA @ 160V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 200mA,

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BZD27C68PHRQG
Taiwan Semiconductor Corporation

BZD27C68PHRQG

bahagian bahagian: 179

Voltan - Zener (Nom) (Vz): 68V, Toleransi: ±5.88%, Kuasa - Maks: 1W, Impedans (Maks) (Zzt): 80 Ohms, Semasa - Kebocoran Terbalik @ Vr: 1µA @ 51V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 200mA,

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BZD17C12P RQG
Taiwan Semiconductor Corporation

BZD17C12P RQG

bahagian bahagian: 266

Voltan - Zener (Nom) (Vz): 12V, Toleransi: ±5.41%, Kuasa - Maks: 800mW, Impedans (Maks) (Zzt): 7 Ohms, Semasa - Kebocoran Terbalik @ Vr: 3µA @ 9.1V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 200mA,

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BZD27C13PHRQG
Taiwan Semiconductor Corporation

BZD27C13PHRQG

bahagian bahagian: 242

Voltan - Zener (Nom) (Vz): 13.25V, Toleransi: ±6.41%, Kuasa - Maks: 1W, Impedans (Maks) (Zzt): 10 Ohms, Semasa - Kebocoran Terbalik @ Vr: 2µA @ 10V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 200mA,

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BZD27C43P RQG
Taiwan Semiconductor Corporation

BZD27C43P RQG

bahagian bahagian: 197

Voltan - Zener (Nom) (Vz): 43V, Toleransi: ±6.97%, Kuasa - Maks: 1W, Impedans (Maks) (Zzt): 45 Ohms, Semasa - Kebocoran Terbalik @ Vr: 1µA @ 33V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 200mA,

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BZD27C20PHRQG
Taiwan Semiconductor Corporation

BZD27C20PHRQG

bahagian bahagian: 268

Voltan - Zener (Nom) (Vz): 20V, Toleransi: ±6%, Kuasa - Maks: 1W, Impedans (Maks) (Zzt): 15 Ohms, Semasa - Kebocoran Terbalik @ Vr: 1µA @ 15V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 200mA,

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BZD27C100P RQG
Taiwan Semiconductor Corporation

BZD27C100P RQG

bahagian bahagian: 173

Voltan - Zener (Nom) (Vz): 100V, Toleransi: ±6%, Kuasa - Maks: 1W, Impedans (Maks) (Zzt): 200 Ohms, Semasa - Kebocoran Terbalik @ Vr: 1µA @ 75V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 200mA,

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BZD27C180P RQG
Taiwan Semiconductor Corporation

BZD27C180P RQG

bahagian bahagian: 221

Voltan - Zener (Nom) (Vz): 179.5V, Toleransi: ±6.4%, Kuasa - Maks: 1W, Impedans (Maks) (Zzt): 450 Ohms, Semasa - Kebocoran Terbalik @ Vr: 1µA @ 130V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 200mA,

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BZD17C18P RQG
Taiwan Semiconductor Corporation

BZD17C18P RQG

bahagian bahagian: 257

Voltan - Zener (Nom) (Vz): 18V, Toleransi: ±6.38%, Kuasa - Maks: 800mW, Impedans (Maks) (Zzt): 15 Ohms, Semasa - Kebocoran Terbalik @ Vr: 1µA @ 13V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 200mA,

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BZD27C39P RQG
Taiwan Semiconductor Corporation

BZD27C39P RQG

bahagian bahagian: 239

Voltan - Zener (Nom) (Vz): 39V, Toleransi: ±5.12%, Kuasa - Maks: 1W, Impedans (Maks) (Zzt): 40 Ohms, Semasa - Kebocoran Terbalik @ Vr: 1µA @ 30V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 200mA,

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BZD27C27P RQG
Taiwan Semiconductor Corporation

BZD27C27P RQG

bahagian bahagian: 245

Voltan - Zener (Nom) (Vz): 27V, Toleransi: ±7.03%, Kuasa - Maks: 1W, Impedans (Maks) (Zzt): 15 Ohms, Semasa - Kebocoran Terbalik @ Vr: 1µA @ 20V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 200mA,

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BZD27C62P RQG
Taiwan Semiconductor Corporation

BZD27C62P RQG

bahagian bahagian: 265

Voltan - Zener (Nom) (Vz): 62V, Toleransi: ±6.45%, Kuasa - Maks: 1W, Impedans (Maks) (Zzt): 80 Ohms, Semasa - Kebocoran Terbalik @ Vr: 1µA @ 47V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 200mA,

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BZD27C91PHRHG
Taiwan Semiconductor Corporation

BZD27C91PHRHG

bahagian bahagian: 264

Voltan - Zener (Nom) (Vz): 90.5V, Toleransi: ±6.07%, Kuasa - Maks: 1W, Impedans (Maks) (Zzt): 200 Ohms, Semasa - Kebocoran Terbalik @ Vr: 1µA @ 68V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 200mA,

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