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Diod - Zener - Bujang

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  • Diod - Zener - Bujang
BZT52B7V5-G RHG
Taiwan Semiconductor Corporation

BZT52B7V5-G RHG

bahagian bahagian: 200

Voltan - Zener (Nom) (Vz): 7.5V, Toleransi: ±2%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 15 Ohms, Semasa - Kebocoran Terbalik @ Vr: 1µA @ 5V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 900mV @ 10mA,

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BZT52C10K RKG
Taiwan Semiconductor Corporation

BZT52C10K RKG

bahagian bahagian: 189

Voltan - Zener (Nom) (Vz): 10V, Toleransi: ±5%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 20 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 7V,

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BZT52B30S RRG
Taiwan Semiconductor Corporation

BZT52B30S RRG

bahagian bahagian: 262

Voltan - Zener (Nom) (Vz): 30V, Toleransi: ±2%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 80 Ohms, Semasa - Kebocoran Terbalik @ Vr: 45nA @ 21V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZX84C6V2 RFG
Taiwan Semiconductor Corporation

BZX84C6V2 RFG

bahagian bahagian: 191

Voltan - Zener (Nom) (Vz): 6.2V, Toleransi: ±5%, Kuasa - Maks: 300mW, Impedans (Maks) (Zzt): 10 Ohms, Semasa - Kebocoran Terbalik @ Vr: 3µA @ 4V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 900mV @ 10mA,

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BZT52C16 RHG
Taiwan Semiconductor Corporation

BZT52C16 RHG

bahagian bahagian: 215

Voltan - Zener (Nom) (Vz): 16V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 40 Ohms, Semasa - Kebocoran Terbalik @ Vr: 45nA @ 11.2V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZT52B6V8 RHG
Taiwan Semiconductor Corporation

BZT52B6V8 RHG

bahagian bahagian: 178

Voltan - Zener (Nom) (Vz): 6.8V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 15 Ohms, Semasa - Kebocoran Terbalik @ Vr: 1.8µA @ 4V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZT52B51S RRG
Taiwan Semiconductor Corporation

BZT52B51S RRG

bahagian bahagian: 169

Voltan - Zener (Nom) (Vz): 51V, Toleransi: ±2%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 180 Ohms, Semasa - Kebocoran Terbalik @ Vr: 45nA @ 35.7V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZT52C75S RRG
Taiwan Semiconductor Corporation

BZT52C75S RRG

bahagian bahagian: 261

Voltan - Zener (Nom) (Vz): 75V, Toleransi: ±5%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 255 Ohms, Semasa - Kebocoran Terbalik @ Vr: 45nA @ 52.5V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZX584B9V1 RSG
Taiwan Semiconductor Corporation

BZX584B9V1 RSG

bahagian bahagian: 212

Voltan - Zener (Nom) (Vz): 9.1V, Toleransi: ±2%, Kuasa - Maks: 150mW, Impedans (Maks) (Zzt): 15 Ohms, Semasa - Kebocoran Terbalik @ Vr: 500nA @ 6V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 900mV @ 10mA,

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BZT52C56K RKG
Taiwan Semiconductor Corporation

BZT52C56K RKG

bahagian bahagian: 211

Voltan - Zener (Nom) (Vz): 56V, Toleransi: ±5%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 200 Ohms, Semasa - Kebocoran Terbalik @ Vr: 1µA @ 43V,

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BZT52B43-G RHG
Taiwan Semiconductor Corporation

BZT52B43-G RHG

bahagian bahagian: 175

Voltan - Zener (Nom) (Vz): 43V, Toleransi: ±2%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 130 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 29.4V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 900mV @ 10mA,

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BZT52C36 RHG
Taiwan Semiconductor Corporation

BZT52C36 RHG

bahagian bahagian: 228

Voltan - Zener (Nom) (Vz): 36V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 90 Ohms, Semasa - Kebocoran Terbalik @ Vr: 45nA @ 25.2V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZT52B27-G RHG
Taiwan Semiconductor Corporation

BZT52B27-G RHG

bahagian bahagian: 203

Voltan - Zener (Nom) (Vz): 27V, Toleransi: ±2%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 80 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 18.9V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 900mV @ 10mA,

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BZT52B24 RHG
Taiwan Semiconductor Corporation

BZT52B24 RHG

bahagian bahagian: 198

Voltan - Zener (Nom) (Vz): 24V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 70 Ohms, Semasa - Kebocoran Terbalik @ Vr: 45nA @ 16.8V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZT52C5V6S RRG
Taiwan Semiconductor Corporation

BZT52C5V6S RRG

bahagian bahagian: 266

Voltan - Zener (Nom) (Vz): 5.6V, Toleransi: ±5%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 40 Ohms, Semasa - Kebocoran Terbalik @ Vr: 900nA @ 2V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZT52C5V1K RKG
Taiwan Semiconductor Corporation

BZT52C5V1K RKG

bahagian bahagian: 181

Voltan - Zener (Nom) (Vz): 5.1V, Toleransi: ±5%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 60 Ohms, Semasa - Kebocoran Terbalik @ Vr: 2µA @ 1.5V,

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BZT52B13S RRG
Taiwan Semiconductor Corporation

BZT52B13S RRG

bahagian bahagian: 169

Voltan - Zener (Nom) (Vz): 13V, Toleransi: ±2%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 30 Ohms, Semasa - Kebocoran Terbalik @ Vr: 90nA @ 8V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZT52B4V3 RHG
Taiwan Semiconductor Corporation

BZT52B4V3 RHG

bahagian bahagian: 207

Voltan - Zener (Nom) (Vz): 4.3V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 90 Ohms, Semasa - Kebocoran Terbalik @ Vr: 2.7µA @ 1V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZT52C22S RRG
Taiwan Semiconductor Corporation

BZT52C22S RRG

bahagian bahagian: 189

Voltan - Zener (Nom) (Vz): 22V, Toleransi: ±5%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 55 Ohms, Semasa - Kebocoran Terbalik @ Vr: 45nA @ 15.4V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZX84C39 RFG
Taiwan Semiconductor Corporation

BZX84C39 RFG

bahagian bahagian: 187

Voltan - Zener (Nom) (Vz): 39V, Toleransi: ±5%, Kuasa - Maks: 300mW, Impedans (Maks) (Zzt): 130 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 27.3V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 900mV @ 10mA,

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BZT52B3V6S RRG
Taiwan Semiconductor Corporation

BZT52B3V6S RRG

bahagian bahagian: 230

Voltan - Zener (Nom) (Vz): 3.6V, Toleransi: ±2%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 90 Ohms, Semasa - Kebocoran Terbalik @ Vr: 4.5µA @ 1V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZT52C12-G RHG
Taiwan Semiconductor Corporation

BZT52C12-G RHG

bahagian bahagian: 180

Voltan - Zener (Nom) (Vz): 12V, Toleransi: ±5%, Kuasa - Maks: 350mW, Impedans (Maks) (Zzt): 25 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 8V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 900mV @ 10mA,

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BZT52C33S RRG
Taiwan Semiconductor Corporation

BZT52C33S RRG

bahagian bahagian: 266

Voltan - Zener (Nom) (Vz): 33V, Toleransi: ±5%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 80 Ohms, Semasa - Kebocoran Terbalik @ Vr: 45nA @ 23V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZX84C33 RFG
Taiwan Semiconductor Corporation

BZX84C33 RFG

bahagian bahagian: 219

Voltan - Zener (Nom) (Vz): 33V, Toleransi: ±5%, Kuasa - Maks: 300mW, Impedans (Maks) (Zzt): 80 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 23.1V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 900mV @ 10mA,

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BZX84C3V9 RFG
Taiwan Semiconductor Corporation

BZX84C3V9 RFG

bahagian bahagian: 223

Voltan - Zener (Nom) (Vz): 3.9V, Toleransi: ±5%, Kuasa - Maks: 300mW, Impedans (Maks) (Zzt): 90 Ohms, Semasa - Kebocoran Terbalik @ Vr: 3µA @ 1V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 900mV @ 10mA,

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BZT52B16S RRG
Taiwan Semiconductor Corporation

BZT52B16S RRG

bahagian bahagian: 180

Voltan - Zener (Nom) (Vz): 16V, Toleransi: ±2%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 40 Ohms, Semasa - Kebocoran Terbalik @ Vr: 45nA @ 11.2V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZT52B5V1-G RHG
Taiwan Semiconductor Corporation

BZT52B5V1-G RHG

bahagian bahagian: 175

Voltan - Zener (Nom) (Vz): 5.1V, Toleransi: ±2%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 60 Ohms, Semasa - Kebocoran Terbalik @ Vr: 2µA @ 2V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 900mV @ 10mA,

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BZT52B27S RRG
Taiwan Semiconductor Corporation

BZT52B27S RRG

bahagian bahagian: 178

Voltan - Zener (Nom) (Vz): 27V, Toleransi: ±2%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 80 Ohms, Semasa - Kebocoran Terbalik @ Vr: 45nA @ 18.9V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZT52C43S RRG
Taiwan Semiconductor Corporation

BZT52C43S RRG

bahagian bahagian: 259

Voltan - Zener (Nom) (Vz): 43V, Toleransi: ±5%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 150 Ohms, Semasa - Kebocoran Terbalik @ Vr: 45nA @ 30.1V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZT52B15-G RHG
Taiwan Semiconductor Corporation

BZT52B15-G RHG

bahagian bahagian: 214

Voltan - Zener (Nom) (Vz): 15V, Toleransi: ±2%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 30 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 10.5V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 900mV @ 10mA,

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BZT52C24-G RHG
Taiwan Semiconductor Corporation

BZT52C24-G RHG

bahagian bahagian: 183

Voltan - Zener (Nom) (Vz): 24V, Toleransi: ±5%, Kuasa - Maks: 350mW, Impedans (Maks) (Zzt): 70 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 16.8V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 900mV @ 10mA,

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BZT52C27-G RHG
Taiwan Semiconductor Corporation

BZT52C27-G RHG

bahagian bahagian: 198

Voltan - Zener (Nom) (Vz): 27V, Toleransi: ±5%, Kuasa - Maks: 350mW, Impedans (Maks) (Zzt): 80 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 18.9V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 900mV @ 10mA,

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BZT52B43S RRG
Taiwan Semiconductor Corporation

BZT52B43S RRG

bahagian bahagian: 167

Voltan - Zener (Nom) (Vz): 43V, Toleransi: ±2%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 150 Ohms, Semasa - Kebocoran Terbalik @ Vr: 45nA @ 30.1V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZT52C4V7 RHG
Taiwan Semiconductor Corporation

BZT52C4V7 RHG

bahagian bahagian: 174

Voltan - Zener (Nom) (Vz): 4.7V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 80 Ohms, Semasa - Kebocoran Terbalik @ Vr: 2.7µA @ 2V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZT52C3V9 RHG
Taiwan Semiconductor Corporation

BZT52C3V9 RHG

bahagian bahagian: 205

Voltan - Zener (Nom) (Vz): 3.9V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 90 Ohms, Semasa - Kebocoran Terbalik @ Vr: 2.7µA @ 1V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZT52C2V7 RHG
Taiwan Semiconductor Corporation

BZT52C2V7 RHG

bahagian bahagian: 185

Voltan - Zener (Nom) (Vz): 2.7V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 100 Ohms, Semasa - Kebocoran Terbalik @ Vr: 18µA @ 1V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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