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Diod - Zener - Bujang

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  • Diod - Zener - Bujang
BZT52C33K RKG
Taiwan Semiconductor Corporation

BZT52C33K RKG

bahagian bahagian: 223

Voltan - Zener (Nom) (Vz): 33V, Toleransi: ±5%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 80 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 25V,

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BZT52C10-G RHG
Taiwan Semiconductor Corporation

BZT52C10-G RHG

bahagian bahagian: 182

Voltan - Zener (Nom) (Vz): 10V, Toleransi: ±5%, Kuasa - Maks: 350mW, Impedans (Maks) (Zzt): 20 Ohms, Semasa - Kebocoran Terbalik @ Vr: 200nA @ 7V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 900mV @ 10mA,

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BZT52C2V4 RHG
Taiwan Semiconductor Corporation

BZT52C2V4 RHG

bahagian bahagian: 211

Voltan - Zener (Nom) (Vz): 2.4V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 100 Ohms, Semasa - Kebocoran Terbalik @ Vr: 45µA @ 1V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZT52B47 RHG
Taiwan Semiconductor Corporation

BZT52B47 RHG

bahagian bahagian: 223

Voltan - Zener (Nom) (Vz): 47V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 170 Ohms, Semasa - Kebocoran Terbalik @ Vr: 45nA @ 33V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZT52C20K RKG
Taiwan Semiconductor Corporation

BZT52C20K RKG

bahagian bahagian: 233

Voltan - Zener (Nom) (Vz): 20V, Toleransi: ±5%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 55 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 15V,

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BZT52B3V0 RHG
Taiwan Semiconductor Corporation

BZT52B3V0 RHG

bahagian bahagian: 245

Voltan - Zener (Nom) (Vz): 3V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 100 Ohms, Semasa - Kebocoran Terbalik @ Vr: 9µA @ 1V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZT52C9V1K RKG
Taiwan Semiconductor Corporation

BZT52C9V1K RKG

bahagian bahagian: 226

Voltan - Zener (Nom) (Vz): 9.1V, Toleransi: ±5%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 15 Ohms, Semasa - Kebocoran Terbalik @ Vr: 500nA @ 6V,

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BZT52C6V2K RKG
Taiwan Semiconductor Corporation

BZT52C6V2K RKG

bahagian bahagian: 174

Voltan - Zener (Nom) (Vz): 6.2V, Toleransi: ±5%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 10 Ohms, Semasa - Kebocoran Terbalik @ Vr: 1µA @ 3V,

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BZT52C3V6-G RHG
Taiwan Semiconductor Corporation

BZT52C3V6-G RHG

bahagian bahagian: 238

Voltan - Zener (Nom) (Vz): 3.6V, Toleransi: ±5%, Kuasa - Maks: 350mW, Impedans (Maks) (Zzt): 90 Ohms, Semasa - Kebocoran Terbalik @ Vr: 5µA @ 1V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 900mV @ 10mA,

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BZT52B39-G RHG
Taiwan Semiconductor Corporation

BZT52B39-G RHG

bahagian bahagian: 205

Voltan - Zener (Nom) (Vz): 39V, Toleransi: ±2%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 130 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 27.3V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 900mV @ 10mA,

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BZT52C30S RRG
Taiwan Semiconductor Corporation

BZT52C30S RRG

bahagian bahagian: 247

Voltan - Zener (Nom) (Vz): 30V, Toleransi: ±5%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 80 Ohms, Semasa - Kebocoran Terbalik @ Vr: 45nA @ 21V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZT52C2V4-G RHG
Taiwan Semiconductor Corporation

BZT52C2V4-G RHG

bahagian bahagian: 222

Voltan - Zener (Nom) (Vz): 2.4V, Toleransi: ±5%, Kuasa - Maks: 350mW, Impedans (Maks) (Zzt): 100 Ohms, Semasa - Kebocoran Terbalik @ Vr: 50µA @ 1V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 900mV @ 10mA,

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BZT52C18K RKG
Taiwan Semiconductor Corporation

BZT52C18K RKG

bahagian bahagian: 208

Voltan - Zener (Nom) (Vz): 18V, Toleransi: ±5%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 45 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 13V,

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BZT52C22-G RHG
Taiwan Semiconductor Corporation

BZT52C22-G RHG

bahagian bahagian: 241

Voltan - Zener (Nom) (Vz): 22V, Toleransi: ±5%, Kuasa - Maks: 350mW, Impedans (Maks) (Zzt): 55 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 15.4V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 900mV @ 10mA,

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BZT52B11-G RHG
Taiwan Semiconductor Corporation

BZT52B11-G RHG

bahagian bahagian: 200

Voltan - Zener (Nom) (Vz): 11V, Toleransi: ±2%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 20 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 8V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 900mV @ 10mA,

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BZT52C3V3-G RHG
Taiwan Semiconductor Corporation

BZT52C3V3-G RHG

bahagian bahagian: 248

Voltan - Zener (Nom) (Vz): 3.3V, Toleransi: ±5%, Kuasa - Maks: 350mW, Impedans (Maks) (Zzt): 95 Ohms, Semasa - Kebocoran Terbalik @ Vr: 5µA @ 1V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 900mV @ 10mA,

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BZX84C22 RFG
Taiwan Semiconductor Corporation

BZX84C22 RFG

bahagian bahagian: 251

Voltan - Zener (Nom) (Vz): 22V, Toleransi: ±5%, Kuasa - Maks: 300mW, Impedans (Maks) (Zzt): 55 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 15.4V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 900mV @ 10mA,

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BZT52B2V4-G RHG
Taiwan Semiconductor Corporation

BZT52B2V4-G RHG

bahagian bahagian: 214

Voltan - Zener (Nom) (Vz): 2.4V, Toleransi: ±2%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 100 Ohms, Semasa - Kebocoran Terbalik @ Vr: 50µA @ 1V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 900mV @ 10mA,

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BZT52C6V8 RHG
Taiwan Semiconductor Corporation

BZT52C6V8 RHG

bahagian bahagian: 204

Voltan - Zener (Nom) (Vz): 6.8V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 15 Ohms, Semasa - Kebocoran Terbalik @ Vr: 1.8µA @ 4V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZT52C62K RKG
Taiwan Semiconductor Corporation

BZT52C62K RKG

bahagian bahagian: 180

Voltan - Zener (Nom) (Vz): 62V, Toleransi: ±5%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 215 Ohms, Semasa - Kebocoran Terbalik @ Vr: 200nA @ 47V,

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BZX84C2V7 RFG
Taiwan Semiconductor Corporation

BZX84C2V7 RFG

bahagian bahagian: 209

Voltan - Zener (Nom) (Vz): 2.7V, Toleransi: ±5%, Kuasa - Maks: 300mW, Impedans (Maks) (Zzt): 100 Ohms, Semasa - Kebocoran Terbalik @ Vr: 20µA @ 1V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 900mV @ 10mA,

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BZT52B18S RRG
Taiwan Semiconductor Corporation

BZT52B18S RRG

bahagian bahagian: 253

Voltan - Zener (Nom) (Vz): 18V, Toleransi: ±2%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 45 Ohms, Semasa - Kebocoran Terbalik @ Vr: 45nA @ 12.6V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZT52C8V2K RKG
Taiwan Semiconductor Corporation

BZT52C8V2K RKG

bahagian bahagian: 195

Voltan - Zener (Nom) (Vz): 8.2V, Toleransi: ±5%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 15 Ohms, Semasa - Kebocoran Terbalik @ Vr: 500nA @ 5V,

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BZT52C24K RKG
Taiwan Semiconductor Corporation

BZT52C24K RKG

bahagian bahagian: 250

Voltan - Zener (Nom) (Vz): 24V, Toleransi: ±5%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 70 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 19V,

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BZT52B4V7S RRG
Taiwan Semiconductor Corporation

BZT52B4V7S RRG

bahagian bahagian: 234

Voltan - Zener (Nom) (Vz): 4.7V, Toleransi: ±2%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 80 Ohms, Semasa - Kebocoran Terbalik @ Vr: 2.7µA @ 2V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZT52C6V8K RKG
Taiwan Semiconductor Corporation

BZT52C6V8K RKG

bahagian bahagian: 241

Voltan - Zener (Nom) (Vz): 6.8V, Toleransi: ±5%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 15 Ohms, Semasa - Kebocoran Terbalik @ Vr: 500nA @ 3.5V,

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BZT52B33-G RHG
Taiwan Semiconductor Corporation

BZT52B33-G RHG

bahagian bahagian: 216

Voltan - Zener (Nom) (Vz): 33V, Toleransi: ±2%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 80 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 23.1V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 900mV @ 10mA,

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BZT52C39-G RHG
Taiwan Semiconductor Corporation

BZT52C39-G RHG

bahagian bahagian: 235

Voltan - Zener (Nom) (Vz): 39V, Toleransi: ±5%, Kuasa - Maks: 350mW, Impedans (Maks) (Zzt): 130 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 27.3V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 900mV @ 10mA,

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BZT52B20-G RHG
Taiwan Semiconductor Corporation

BZT52B20-G RHG

bahagian bahagian: 249

Voltan - Zener (Nom) (Vz): 20V, Toleransi: ±2%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 55 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 14V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 900mV @ 10mA,

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BZX84C4V7 RFG
Taiwan Semiconductor Corporation

BZX84C4V7 RFG

bahagian bahagian: 263

Voltan - Zener (Nom) (Vz): 4.7V, Toleransi: ±5%, Kuasa - Maks: 300mW, Impedans (Maks) (Zzt): 80 Ohms, Semasa - Kebocoran Terbalik @ Vr: 3µA @ 2V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 900mV @ 10mA,

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BZT52B39S RRG
Taiwan Semiconductor Corporation

BZT52B39S RRG

bahagian bahagian: 198

Voltan - Zener (Nom) (Vz): 39V, Toleransi: ±2%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 130 Ohms, Semasa - Kebocoran Terbalik @ Vr: 45nA @ 27.3V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZT52C13-G RHG
Taiwan Semiconductor Corporation

BZT52C13-G RHG

bahagian bahagian: 171

Voltan - Zener (Nom) (Vz): 13V, Toleransi: ±5%, Kuasa - Maks: 350mW, Impedans (Maks) (Zzt): 30 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 8V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 900mV @ 10mA,

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BZT52C20-G RHG
Taiwan Semiconductor Corporation

BZT52C20-G RHG

bahagian bahagian: 233

Voltan - Zener (Nom) (Vz): 20V, Toleransi: ±5%, Kuasa - Maks: 350mW, Impedans (Maks) (Zzt): 55 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 14V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 900mV @ 10mA,

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BZT52C5V6-G RHG
Taiwan Semiconductor Corporation

BZT52C5V6-G RHG

bahagian bahagian: 186

Voltan - Zener (Nom) (Vz): 5.6V, Toleransi: ±5%, Kuasa - Maks: 350mW, Impedans (Maks) (Zzt): 40 Ohms, Semasa - Kebocoran Terbalik @ Vr: 1µA @ 2V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 900mV @ 10mA,

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BZT52B15S RRG
Taiwan Semiconductor Corporation

BZT52B15S RRG

bahagian bahagian: 255

Voltan - Zener (Nom) (Vz): 15V, Toleransi: ±2%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 30 Ohms, Semasa - Kebocoran Terbalik @ Vr: 45nA @ 10.5V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZT52B33S RRG
Taiwan Semiconductor Corporation

BZT52B33S RRG

bahagian bahagian: 220

Voltan - Zener (Nom) (Vz): 33V, Toleransi: ±2%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 80 Ohms, Semasa - Kebocoran Terbalik @ Vr: 45nA @ 23V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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