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Diod - Zener - Bujang

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BZT52C6V2-G RHG
Taiwan Semiconductor Corporation

BZT52C6V2-G RHG

bahagian bahagian: 234

Voltan - Zener (Nom) (Vz): 6.2V, Toleransi: ±5%, Kuasa - Maks: 350mW, Impedans (Maks) (Zzt): 10 Ohms, Semasa - Kebocoran Terbalik @ Vr: 3µA @ 4V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 900mV @ 10mA,

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BZX584B5V1 RSG
Taiwan Semiconductor Corporation

BZX584B5V1 RSG

bahagian bahagian: 224

Voltan - Zener (Nom) (Vz): 5.1V, Toleransi: ±2%, Kuasa - Maks: 150mW, Impedans (Maks) (Zzt): 60 Ohms, Semasa - Kebocoran Terbalik @ Vr: 2µA @ 2V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 900mV @ 10mA,

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BZT52C39 RHG
Taiwan Semiconductor Corporation

BZT52C39 RHG

bahagian bahagian: 252

Voltan - Zener (Nom) (Vz): 39V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 130 Ohms, Semasa - Kebocoran Terbalik @ Vr: 45nA @ 27.3V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZT52C43K RKG
Taiwan Semiconductor Corporation

BZT52C43K RKG

bahagian bahagian: 225

Voltan - Zener (Nom) (Vz): 43V, Toleransi: ±5%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 150 Ohms, Semasa - Kebocoran Terbalik @ Vr: 2µA @ 33V,

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BZT52B56S RRG
Taiwan Semiconductor Corporation

BZT52B56S RRG

bahagian bahagian: 199

Voltan - Zener (Nom) (Vz): 56V, Toleransi: ±2%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 200 Ohms, Semasa - Kebocoran Terbalik @ Vr: 45nA @ 39.2V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZT52C15K RKG
Taiwan Semiconductor Corporation

BZT52C15K RKG

bahagian bahagian: 256

Voltan - Zener (Nom) (Vz): 15V, Toleransi: ±5%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 30 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 11V,

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BZT52B11 RHG
Taiwan Semiconductor Corporation

BZT52B11 RHG

bahagian bahagian: 174

Voltan - Zener (Nom) (Vz): 11V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 20 Ohms, Semasa - Kebocoran Terbalik @ Vr: 90nA @ 8V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZT52B5V6 RHG
Taiwan Semiconductor Corporation

BZT52B5V6 RHG

bahagian bahagian: 195

Voltan - Zener (Nom) (Vz): 5.6V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 40 Ohms, Semasa - Kebocoran Terbalik @ Vr: 900nA @ 2V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZX84C16 RFG
Taiwan Semiconductor Corporation

BZX84C16 RFG

bahagian bahagian: 185

Voltan - Zener (Nom) (Vz): 16V, Toleransi: ±5%, Kuasa - Maks: 300mW, Impedans (Maks) (Zzt): 40 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 11.2V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 900mV @ 10mA,

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BZT52C9V1-G RHG
Taiwan Semiconductor Corporation

BZT52C9V1-G RHG

bahagian bahagian: 198

Voltan - Zener (Nom) (Vz): 9.1V, Toleransi: ±5%, Kuasa - Maks: 350mW, Impedans (Maks) (Zzt): 15 Ohms, Semasa - Kebocoran Terbalik @ Vr: 500nA @ 6V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 900mV @ 10mA,

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BZT52B22-G RHG
Taiwan Semiconductor Corporation

BZT52B22-G RHG

bahagian bahagian: 228

Voltan - Zener (Nom) (Vz): 22V, Toleransi: ±2%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 55 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 15.4V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 900mV @ 10mA,

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BZT52C2V7K RKG
Taiwan Semiconductor Corporation

BZT52C2V7K RKG

bahagian bahagian: 233

Voltan - Zener (Nom) (Vz): 2.7V, Toleransi: ±5%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 100 Ohms, Semasa - Kebocoran Terbalik @ Vr: 120µA @ 1V,

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BZT52C5V1-G RHG
Taiwan Semiconductor Corporation

BZT52C5V1-G RHG

bahagian bahagian: 196

Voltan - Zener (Nom) (Vz): 5.1V, Toleransi: ±5%, Kuasa - Maks: 350mW, Impedans (Maks) (Zzt): 60 Ohms, Semasa - Kebocoran Terbalik @ Vr: 2µA @ 2V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 900mV @ 10mA,

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BZT52C3V9S RRG
Taiwan Semiconductor Corporation

BZT52C3V9S RRG

bahagian bahagian: 217

Voltan - Zener (Nom) (Vz): 3.9V, Toleransi: ±5%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 90 Ohms, Semasa - Kebocoran Terbalik @ Vr: 2.7µA @ 1V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZT52B6V2-G RHG
Taiwan Semiconductor Corporation

BZT52B6V2-G RHG

bahagian bahagian: 169

Voltan - Zener (Nom) (Vz): 6.2V, Toleransi: ±2%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 10 Ohms, Semasa - Kebocoran Terbalik @ Vr: 3µA @ 4V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 900mV @ 10mA,

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BZT52B51 RHG
Taiwan Semiconductor Corporation

BZT52B51 RHG

bahagian bahagian: 193

Voltan - Zener (Nom) (Vz): 51V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 180 Ohms, Semasa - Kebocoran Terbalik @ Vr: 45nA @ 35.7V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZT52C5V1 RHG
Taiwan Semiconductor Corporation

BZT52C5V1 RHG

bahagian bahagian: 170

Voltan - Zener (Nom) (Vz): 5.1V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 60 Ohms, Semasa - Kebocoran Terbalik @ Vr: 1.8µA @ 2V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZT52C3V9-G RHG
Taiwan Semiconductor Corporation

BZT52C3V9-G RHG

bahagian bahagian: 240

Voltan - Zener (Nom) (Vz): 3.9V, Toleransi: ±5%, Kuasa - Maks: 350mW, Impedans (Maks) (Zzt): 90 Ohms, Semasa - Kebocoran Terbalik @ Vr: 3µA @ 1V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 900mV @ 10mA,

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BZT52C22K RKG
Taiwan Semiconductor Corporation

BZT52C22K RKG

bahagian bahagian: 246

Voltan - Zener (Nom) (Vz): 22V, Toleransi: ±5%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 55 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 17V,

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BZX584B8V2 RSG
Taiwan Semiconductor Corporation

BZX584B8V2 RSG

bahagian bahagian: 227

Voltan - Zener (Nom) (Vz): 8.2V, Toleransi: ±2%, Kuasa - Maks: 150mW, Impedans (Maks) (Zzt): 15 Ohms, Semasa - Kebocoran Terbalik @ Vr: 700nA @ 5V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 900mV @ 10mA,

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BZX84C3V3 RFG
Taiwan Semiconductor Corporation

BZX84C3V3 RFG

bahagian bahagian: 224

Voltan - Zener (Nom) (Vz): 3.3V, Toleransi: ±5%, Kuasa - Maks: 300mW, Impedans (Maks) (Zzt): 95 Ohms, Semasa - Kebocoran Terbalik @ Vr: 5µA @ 1V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 900mV @ 10mA,

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BZX84C9V1 RFG
Taiwan Semiconductor Corporation

BZX84C9V1 RFG

bahagian bahagian: 254

Voltan - Zener (Nom) (Vz): 9.1V, Toleransi: ±5%, Kuasa - Maks: 300mW, Impedans (Maks) (Zzt): 15 Ohms, Semasa - Kebocoran Terbalik @ Vr: 500nA @ 6V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 900mV @ 10mA,

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BZT52C2V7S RRG
Taiwan Semiconductor Corporation

BZT52C2V7S RRG

bahagian bahagian: 252

Voltan - Zener (Nom) (Vz): 2.7V, Toleransi: ±5%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 100 Ohms, Semasa - Kebocoran Terbalik @ Vr: 18µA @ 1V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZT52C27S RRG
Taiwan Semiconductor Corporation

BZT52C27S RRG

bahagian bahagian: 178

Voltan - Zener (Nom) (Vz): 27V, Toleransi: ±5%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 80 Ohms, Semasa - Kebocoran Terbalik @ Vr: 45nA @ 18.9V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZT52C13K RKG
Taiwan Semiconductor Corporation

BZT52C13K RKG

bahagian bahagian: 169

Voltan - Zener (Nom) (Vz): 13V, Toleransi: ±5%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 30 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 10V,

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BZT52C3V0-G RHG
Taiwan Semiconductor Corporation

BZT52C3V0-G RHG

bahagian bahagian: 213

Voltan - Zener (Nom) (Vz): 3V, Toleransi: ±5%, Kuasa - Maks: 350mW, Impedans (Maks) (Zzt): 95 Ohms, Semasa - Kebocoran Terbalik @ Vr: 10µA @ 1V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 900mV @ 10mA,

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BZT52B68 RHG
Taiwan Semiconductor Corporation

BZT52B68 RHG

bahagian bahagian: 172

Voltan - Zener (Nom) (Vz): 68V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 240 Ohms, Semasa - Kebocoran Terbalik @ Vr: 45nA @ 47.6V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZT52B62 RHG
Taiwan Semiconductor Corporation

BZT52B62 RHG

bahagian bahagian: 192

Voltan - Zener (Nom) (Vz): 62V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 215 Ohms, Semasa - Kebocoran Terbalik @ Vr: 45nA @ 43.4V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZX84C2V4 RFG
Taiwan Semiconductor Corporation

BZX84C2V4 RFG

bahagian bahagian: 218

Voltan - Zener (Nom) (Vz): 2.4V, Toleransi: ±5%, Kuasa - Maks: 300mW, Impedans (Maks) (Zzt): 100 Ohms, Semasa - Kebocoran Terbalik @ Vr: 50µA @ 1V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 900mV @ 10mA,

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BZT52B6V8S RRG
Taiwan Semiconductor Corporation

BZT52B6V8S RRG

bahagian bahagian: 243

Voltan - Zener (Nom) (Vz): 6.8V, Toleransi: ±2%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 15 Ohms, Semasa - Kebocoran Terbalik @ Vr: 1.8µA @ 4V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZT52C8V2S RRG
Taiwan Semiconductor Corporation

BZT52C8V2S RRG

bahagian bahagian: 207

Voltan - Zener (Nom) (Vz): 8.2V, Toleransi: ±5%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 15 Ohms, Semasa - Kebocoran Terbalik @ Vr: 630nA @ 5V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZT52B10-G RHG
Taiwan Semiconductor Corporation

BZT52B10-G RHG

bahagian bahagian: 232

Voltan - Zener (Nom) (Vz): 10V, Toleransi: ±2%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 20 Ohms, Semasa - Kebocoran Terbalik @ Vr: 200nA @ 7V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 900mV @ 10mA,

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BZT52C24S RRG
Taiwan Semiconductor Corporation

BZT52C24S RRG

bahagian bahagian: 226

Voltan - Zener (Nom) (Vz): 24V, Toleransi: ±5%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 70 Ohms, Semasa - Kebocoran Terbalik @ Vr: 45nA @ 16.8V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZX84C5V6 RFG
Taiwan Semiconductor Corporation

BZX84C5V6 RFG

bahagian bahagian: 192

Voltan - Zener (Nom) (Vz): 5.6V, Toleransi: ±5%, Kuasa - Maks: 300mW, Impedans (Maks) (Zzt): 40 Ohms, Semasa - Kebocoran Terbalik @ Vr: 1µA @ 2V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 900mV @ 10mA,

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BZT52B5V6-G RHG
Taiwan Semiconductor Corporation

BZT52B5V6-G RHG

bahagian bahagian: 180

Voltan - Zener (Nom) (Vz): 5.6V, Toleransi: ±2%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 40 Ohms, Semasa - Kebocoran Terbalik @ Vr: 1µA @ 2V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 900mV @ 10mA,

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BZT52C3V0 RHG
Taiwan Semiconductor Corporation

BZT52C3V0 RHG

bahagian bahagian: 181

Voltan - Zener (Nom) (Vz): 3V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 100 Ohms, Semasa - Kebocoran Terbalik @ Vr: 9µA @ 1V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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