Transistor - FET, MOSFET - Susunan

Rumah
Transistor - FET, MOSFET - Susunan

Vishay Siliconix

SI5944DU-T1-E3

bahagian bahagian: 2715

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A, Rds On (Maks) @ Id, Vgs: 112 mOhm @ 3.3A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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Vishay Siliconix

SI1016X-T1-E3

bahagian bahagian: 2759

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 485mA, 370mA, Rds On (Maks) @ Id, Vgs: 700 mOhm @ 600mA, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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SI5904DC-T1-GE3

Vishay Siliconix

SI5904DC-T1-GE3

bahagian bahagian: 2807

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.1A, Rds On (Maks) @ Id, Vgs: 75 mOhm @ 3.1A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

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SI9936BDY-T1-GE3

Vishay Siliconix

SI9936BDY-T1-GE3

bahagian bahagian: 2872

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.5A, Rds On (Maks) @ Id, Vgs: 35 mOhm @ 6A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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Vishay Siliconix

VQ2001P-2

bahagian bahagian: 2875

Jenis FET: 4 P-Channel, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 600mA, Rds On (Maks) @ Id, Vgs: 2 Ohm @ 1A, 12V, Vgs (th) (Maks) @ Id: 4.5V @ 1mA,

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SIA911DJ-T1-GE3

Vishay Siliconix

SIA911DJ-T1-GE3

bahagian bahagian: 2844

Jenis FET: 2 P-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.5A, Rds On (Maks) @ Id, Vgs: 94 mOhm @ 2.8A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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SI4814BDY-T1-E3

Vishay Siliconix

SI4814BDY-T1-E3

bahagian bahagian: 3376

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 10A, 10.5A, Rds On (Maks) @ Id, Vgs: 18 mOhm @ 10A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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SI4818DY-T1-GE3

Vishay Siliconix

SI4818DY-T1-GE3

bahagian bahagian: 2835

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.3A, 7A, Rds On (Maks) @ Id, Vgs: 22 mOhm @ 6.3A, 10V, Vgs (th) (Maks) @ Id: 800mV @ 250µA (Min),

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Vishay Siliconix

SI7904DN-T1-E3

bahagian bahagian: 2818

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.3A, Rds On (Maks) @ Id, Vgs: 30 mOhm @ 7.7A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 935µA,

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SI5920DC-T1-GE3

Vishay Siliconix

SI5920DC-T1-GE3

bahagian bahagian: 2868

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 8V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4A, Rds On (Maks) @ Id, Vgs: 32 mOhm @ 6.8A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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SI5519DU-T1-GE3

Vishay Siliconix

SI5519DU-T1-GE3

bahagian bahagian: 2823

Jenis FET: N and P-Channel, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A, Rds On (Maks) @ Id, Vgs: 36 mOhm @ 6.1A, 4.5V, Vgs (th) (Maks) @ Id: 1.8V @ 250µA,

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Vishay Siliconix

SI1903DL-T1-E3

bahagian bahagian: 2791

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 410mA, Rds On (Maks) @ Id, Vgs: 995 mOhm @ 410mA, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

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Vishay Siliconix

SI1905DL-T1-E3

bahagian bahagian: 2724

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 8V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 570mA, Rds On (Maks) @ Id, Vgs: 600 mOhm @ 570mA, 4.5V, Vgs (th) (Maks) @ Id: 450mV @ 250µA (Min),

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Vishay Siliconix

SI6983DQ-T1-E3

bahagian bahagian: 2714

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.6A, Rds On (Maks) @ Id, Vgs: 24 mOhm @ 5.4A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 400µA,

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Vishay Siliconix

VQ2001P

bahagian bahagian: 2906

Jenis FET: 4 P-Channel, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 600mA, Rds On (Maks) @ Id, Vgs: 2 Ohm @ 1A, 12V, Vgs (th) (Maks) @ Id: 4.5V @ 1mA,

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SI4947ADY-T1-GE3

Vishay Siliconix

SI4947ADY-T1-GE3

bahagian bahagian: 2852

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3A, Rds On (Maks) @ Id, Vgs: 80 mOhm @ 3.9A, 10V, Vgs (th) (Maks) @ Id: 1V @ 250µA (Min),

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Vishay Siliconix

SI1913DH-T1-E3

bahagian bahagian: 2766

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 880mA, Rds On (Maks) @ Id, Vgs: 490 mOhm @ 880mA, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 100µA,

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SI4276DY-T1-GE3

Vishay Siliconix

SI4276DY-T1-GE3

bahagian bahagian: 2851

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8A, Rds On (Maks) @ Id, Vgs: 15.3 mOhm @ 9.5A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

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SI3905DV-T1-GE3

Vishay Siliconix

SI3905DV-T1-GE3

bahagian bahagian: 2849

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 8V, Rds On (Maks) @ Id, Vgs: 125 mOhm @ 2.5A, 4.5V, Vgs (th) (Maks) @ Id: 450mV @ 250µA (Min),

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SI4913DY-T1-GE3

Vishay Siliconix

SI4913DY-T1-GE3

bahagian bahagian: 2852

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7.1A, Rds On (Maks) @ Id, Vgs: 15 mOhm @ 9.4A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 500µA,

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SI3909DV-T1-GE3

Vishay Siliconix

SI3909DV-T1-GE3

bahagian bahagian: 2826

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Rds On (Maks) @ Id, Vgs: 200 mOhm @ 1.8A, 4.5V, Vgs (th) (Maks) @ Id: 500mV @ 250µA (Min),

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SI4944DY-T1-GE3

Vishay Siliconix

SI4944DY-T1-GE3

bahagian bahagian: 2874

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 9.3A, Rds On (Maks) @ Id, Vgs: 9.5 mOhm @ 12.2A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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SI4933DY-T1-GE3

Vishay Siliconix

SI4933DY-T1-GE3

bahagian bahagian: 2815

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7.4A, Rds On (Maks) @ Id, Vgs: 14 mOhm @ 9.8A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 500µA,

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SI7909DN-T1-GE3

Vishay Siliconix

SI7909DN-T1-GE3

bahagian bahagian: 2908

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.3A, Rds On (Maks) @ Id, Vgs: 37 mOhm @ 7.7A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 700µA,

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Vishay Siliconix

SI7844DP-T1-E3

bahagian bahagian: 3302

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.4A, Rds On (Maks) @ Id, Vgs: 22 mOhm @ 10A, 10V, Vgs (th) (Maks) @ Id: 2.4V @ 250µA,

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SI4567DY-T1-GE3

Vishay Siliconix

SI4567DY-T1-GE3

bahagian bahagian: 2812

Jenis FET: N and P-Channel, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5A, 4.4A, Rds On (Maks) @ Id, Vgs: 60 mOhm @ 4.1A, 10V, Vgs (th) (Maks) @ Id: 2.2V @ 250µA,

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Vishay Siliconix

SI7214DN-T1-E3

bahagian bahagian: 99156

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.6A, Rds On (Maks) @ Id, Vgs: 40 mOhm @ 6.4A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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SI4532ADY-T1-E3

Vishay Siliconix

SI4532ADY-T1-E3

bahagian bahagian: 139238

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.7A, 3A, Rds On (Maks) @ Id, Vgs: 53 mOhm @ 4.9A, 10V, Vgs (th) (Maks) @ Id: 1V @ 250µA (Min),

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Vishay Siliconix

SI5513DC-T1-E3

bahagian bahagian: 2794

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.1A, 2.1A, Rds On (Maks) @ Id, Vgs: 75 mOhm @ 3.1A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

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Vishay Siliconix

SI5947DU-T1-E3

bahagian bahagian: 2793

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A, Rds On (Maks) @ Id, Vgs: 58 mOhm @ 3.6A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

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Vishay Siliconix

SI7909DN-T1-E3

bahagian bahagian: 2903

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.3A, Rds On (Maks) @ Id, Vgs: 37 mOhm @ 7.7A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 700µA,

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SIZ914DT-T1-GE3

Vishay Siliconix

SIZ914DT-T1-GE3

bahagian bahagian: 89189

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 16A, 40A, Rds On (Maks) @ Id, Vgs: 6.4 mOhm @ 19A, 10V, Vgs (th) (Maks) @ Id: 2.4V @ 250µA,

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SI4834BDY-T1-E3

Vishay Siliconix

SI4834BDY-T1-E3

bahagian bahagian: 2745

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.7A, Rds On (Maks) @ Id, Vgs: 22 mOhm @ 7.5A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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Vishay Siliconix

SIB911DK-T1-E3

bahagian bahagian: 2804

Jenis FET: 2 P-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.6A, Rds On (Maks) @ Id, Vgs: 295 mOhm @ 1.5A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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SI7224DN-T1-GE3

Vishay Siliconix

SI7224DN-T1-GE3

bahagian bahagian: 139892

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A, Rds On (Maks) @ Id, Vgs: 35 mOhm @ 6.5A, 10V, Vgs (th) (Maks) @ Id: 2.2V @ 250µA,

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SMMB911DK-T1-GE3

Vishay Siliconix

SMMB911DK-T1-GE3

bahagian bahagian: 2878

Jenis FET: 2 P-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.6A, Rds On (Maks) @ Id, Vgs: 295 mOhm @ 1.5A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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