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Transistor - FET, MOSFET - Susunan

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  • Transistor - FET, MOSFET - Susunan
SI1034CX-T1-GE3
Vishay Siliconix

SI1034CX-T1-GE3

bahagian bahagian: 141761

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 610mA (Ta), Rds On (Maks) @ Id, Vgs: 396 mOhm @ 500mA, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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SQ1922EEH-T1_GE3
Vishay Siliconix

SQ1922EEH-T1_GE3

bahagian bahagian: 2536

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 840mA (Tc), Rds On (Maks) @ Id, Vgs: 350 mOhm @ 400mA, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

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SQJB68EP-T1_GE3
Vishay Siliconix

SQJB68EP-T1_GE3

bahagian bahagian: 2512

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 11A (Tc), Rds On (Maks) @ Id, Vgs: 92 mOhm @ 4A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

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SIA906EDJ-T1-GE3
Vishay Siliconix

SIA906EDJ-T1-GE3

bahagian bahagian: 181601

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.5A, Rds On (Maks) @ Id, Vgs: 46 mOhm @ 3.9A, 4.5V, Vgs (th) (Maks) @ Id: 1.4V @ 250µA,

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SI7228DN-T1-GE3
Vishay Siliconix

SI7228DN-T1-GE3

bahagian bahagian: 108156

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 26A, Rds On (Maks) @ Id, Vgs: 20 mOhm @ 8.8A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

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SIZ200DT-T1-GE3
Vishay Siliconix

SIZ200DT-T1-GE3

bahagian bahagian: 2544

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 22A (Ta), 61A (Tc), 22A (Ta), 60A (Tc), Rds On (Maks) @ Id, Vgs: 5.5 mOhm @ 10A, 10V, 5.8 mOhm @ 10A, 10V, Vgs (th) (Maks) @ Id: 2.4V @ 250µA,

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SI5908DC-T1-E3
Vishay Siliconix

SI5908DC-T1-E3

bahagian bahagian: 118929

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.4A, Rds On (Maks) @ Id, Vgs: 40 mOhm @ 4.4A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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SQJ912BEP-T1_GE3
Vishay Siliconix

SQJ912BEP-T1_GE3

bahagian bahagian: 2589

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 30A (Tc), Rds On (Maks) @ Id, Vgs: 11 mOhm @ 9A, 10V, Vgs (th) (Maks) @ Id: 2V @ 250µA,

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SQ1912EH-T1_GE3
Vishay Siliconix

SQ1912EH-T1_GE3

bahagian bahagian: 132067

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 800mA (Tc), Rds On (Maks) @ Id, Vgs: 280 mOhm @ 1.2A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

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SI7272DP-T1-GE3
Vishay Siliconix

SI7272DP-T1-GE3

bahagian bahagian: 110674

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 25A, Rds On (Maks) @ Id, Vgs: 9.3 mOhm @ 15A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

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SI4931DY-T1-GE3
Vishay Siliconix

SI4931DY-T1-GE3

bahagian bahagian: 180864

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.7A, Rds On (Maks) @ Id, Vgs: 18 mOhm @ 8.9A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 350µA,

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SI4228DY-T1-GE3
Vishay Siliconix

SI4228DY-T1-GE3

bahagian bahagian: 190253

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 25V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8A, Rds On (Maks) @ Id, Vgs: 18 mOhm @ 7A, 10V, Vgs (th) (Maks) @ Id: 1.4V @ 250µA,

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SI8902AEDB-T2-E1
Vishay Siliconix

SI8902AEDB-T2-E1

bahagian bahagian: 3310

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 24V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 11A, Rds On (Maks) @ Id, Vgs: 28 mOhm @ 1A, 4.5V, Vgs (th) (Maks) @ Id: 900mV @ 250µA,

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SQJ960EP-T1_GE3
Vishay Siliconix

SQJ960EP-T1_GE3

bahagian bahagian: 77437

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8A, Rds On (Maks) @ Id, Vgs: 36 mOhm @ 5.3A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

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SIA527DJ-T1-GE3
Vishay Siliconix

SIA527DJ-T1-GE3

bahagian bahagian: 180836

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.5A, Rds On (Maks) @ Id, Vgs: 29 mOhm @ 5A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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SIB912DK-T1-GE3
Vishay Siliconix

SIB912DK-T1-GE3

bahagian bahagian: 125137

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.5A, Rds On (Maks) @ Id, Vgs: 216 mOhm @ 1.8A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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SI9933CDY-T1-GE3
Vishay Siliconix

SI9933CDY-T1-GE3

bahagian bahagian: 185277

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4A, Rds On (Maks) @ Id, Vgs: 58 mOhm @ 4.8A, 4.5V, Vgs (th) (Maks) @ Id: 1.4V @ 250µA,

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SI7942DP-T1-E3
Vishay Siliconix

SI7942DP-T1-E3

bahagian bahagian: 63525

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.8A, Rds On (Maks) @ Id, Vgs: 49 mOhm @ 5.9A, 10V, Vgs (th) (Maks) @ Id: 4V @ 250µA,

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SI7922DN-T1-GE3
Vishay Siliconix

SI7922DN-T1-GE3

bahagian bahagian: 86516

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.8A, Rds On (Maks) @ Id, Vgs: 195 mOhm @ 2.5A, 10V, Vgs (th) (Maks) @ Id: 3.5V @ 250µA,

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SI1036X-T1-GE3
Vishay Siliconix

SI1036X-T1-GE3

bahagian bahagian: 2514

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 610mA (Ta), Rds On (Maks) @ Id, Vgs: 540 mOhm @ 500mA, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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SI7956DP-T1-GE3
Vishay Siliconix

SI7956DP-T1-GE3

bahagian bahagian: 44000

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 150V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.6A, Rds On (Maks) @ Id, Vgs: 105 mOhm @ 4.1A, 10V, Vgs (th) (Maks) @ Id: 4V @ 250µA,

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SI1024X-T1-GE3
Vishay Siliconix

SI1024X-T1-GE3

bahagian bahagian: 185794

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 485mA, Rds On (Maks) @ Id, Vgs: 700 mOhm @ 600mA, 4.5V, Vgs (th) (Maks) @ Id: 900mV @ 250µA,

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SIA918EDJ-T1-GE3
Vishay Siliconix

SIA918EDJ-T1-GE3

bahagian bahagian: 171457

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.5A (Tc), Rds On (Maks) @ Id, Vgs: 58 mOhm @ 3A, 4.5V, Vgs (th) (Maks) @ Id: 900mV @ 250µA,

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SIZ730DT-T1-GE3
Vishay Siliconix

SIZ730DT-T1-GE3

bahagian bahagian: 117470

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 16A, 35A, Rds On (Maks) @ Id, Vgs: 9.3 mOhm @ 15A, 10V, Vgs (th) (Maks) @ Id: 2.2V @ 250µA,

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SQ4940AEY-T1_GE3
Vishay Siliconix

SQ4940AEY-T1_GE3

bahagian bahagian: 158519

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8A, Rds On (Maks) @ Id, Vgs: 24 mOhm @ 5.3A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

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SI4925DDY-T1-GE3
Vishay Siliconix

SI4925DDY-T1-GE3

bahagian bahagian: 189530

Jenis FET: 2 P-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8A, Rds On (Maks) @ Id, Vgs: 29 mOhm @ 7.3A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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SIRB40DP-T1-GE3
Vishay Siliconix

SIRB40DP-T1-GE3

bahagian bahagian: 117423

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 40A (Tc), Rds On (Maks) @ Id, Vgs: 3.25 mOhm @ 10A, 10V, Vgs (th) (Maks) @ Id: 2.4V @ 250µA,

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SQ4284EY-T1_GE3
Vishay Siliconix

SQ4284EY-T1_GE3

bahagian bahagian: 100159

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 40V, Rds On (Maks) @ Id, Vgs: 13.5 mOhm @ 7A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

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SQJQ906EL-T1_GE3
Vishay Siliconix

SQJQ906EL-T1_GE3

bahagian bahagian: 63261

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 160A (Tc), Rds On (Maks) @ Id, Vgs: 4.3 mOhm @ 5A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

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SQJ958EP-T1_GE3
Vishay Siliconix

SQJ958EP-T1_GE3

bahagian bahagian: 2544

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 20A (Tc), Rds On (Maks) @ Id, Vgs: 34.9 mOhm @ 4.5A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

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SI7942DP-T1-GE3
Vishay Siliconix

SI7942DP-T1-GE3

bahagian bahagian: 63492

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.8A, Rds On (Maks) @ Id, Vgs: 49 mOhm @ 5.9A, 10V, Vgs (th) (Maks) @ Id: 4V @ 250µA,

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SI1967DH-T1-GE3
Vishay Siliconix

SI1967DH-T1-GE3

bahagian bahagian: 103126

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.3A, Rds On (Maks) @ Id, Vgs: 490 mOhm @ 910mA, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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SI7252DP-T1-GE3
Vishay Siliconix

SI7252DP-T1-GE3

bahagian bahagian: 70505

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 36.7A, Rds On (Maks) @ Id, Vgs: 18 mOhm @ 15A, 10V, Vgs (th) (Maks) @ Id: 3.5V @ 250µA,

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SQJB42EP-T1_GE3
Vishay Siliconix

SQJB42EP-T1_GE3

bahagian bahagian: 152436

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 30A (Tc), Rds On (Maks) @ Id, Vgs: 9.5 mOhm @ 10A, 10V, Vgs (th) (Maks) @ Id: 3.5V @ 250µA,

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SI4228DY-T1-E3
Vishay Siliconix

SI4228DY-T1-E3

bahagian bahagian: 190258

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 25V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8A, Rds On (Maks) @ Id, Vgs: 18 mOhm @ 7A, 10V, Vgs (th) (Maks) @ Id: 1.4V @ 250µA,

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SISF00DN-T1-GE3
Vishay Siliconix

SISF00DN-T1-GE3

bahagian bahagian: 2608

Jenis FET: 2 N-Channel (Dual) Common Drain, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 60A (Tc), Rds On (Maks) @ Id, Vgs: 5 mOhm @ 10A, 10V, Vgs (th) (Maks) @ Id: 2.1V @ 250µA,

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