Transistor - FET, MOSFET - Susunan | Produk Semikonduktor Diskrit | 18

SI4942DY-T1-GE3

bahagian bahagian: 2829

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.3A, Rds On (Maks) @ Id, Vgs: 21 mOhm @ 7.4A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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Vishay Siliconix

SI4622DY-T1-E3

bahagian bahagian: 2830

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8A, Rds On (Maks) @ Id, Vgs: 16 mOhm @ 9.6A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 1mA,

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Vishay Siliconix

SI5915BDC-T1-E3

bahagian bahagian: 2830

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 8V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4A, Rds On (Maks) @ Id, Vgs: 70 mOhm @ 3.3A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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Vishay Siliconix

SI4920DY-T1-GE3

bahagian bahagian: 3373

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Rds On (Maks) @ Id, Vgs: 25 mOhm @ 6.9A, 10V, Vgs (th) (Maks) @ Id: 1V @ 250µA (Min),

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Vishay Siliconix

SI7530DP-T1-E3

bahagian bahagian: 2779

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3A, 3.2A, Rds On (Maks) @ Id, Vgs: 75 mOhm @ 4.6A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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Vishay Siliconix

SI4226DY-T1-GE3

bahagian bahagian: 2790

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 25V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8A, Rds On (Maks) @ Id, Vgs: 19.5 mOhm @ 7A, 4.5V, Vgs (th) (Maks) @ Id: 2V @ 250µA,

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Vishay Siliconix

SI5903DC-T1-GE3

bahagian bahagian: 2802

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.1A, Rds On (Maks) @ Id, Vgs: 155 mOhm @ 2.1A, 4.5V, Vgs (th) (Maks) @ Id: 600mV @ 250µA (Min),

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Vishay Siliconix

SI5509DC-T1-GE3

bahagian bahagian: 2824

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.1A, 4.8A, Rds On (Maks) @ Id, Vgs: 52 mOhm @ 5A, 4.5V, Vgs (th) (Maks) @ Id: 2V @ 250µA,

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Vishay Siliconix

SI4908DY-T1-GE3

bahagian bahagian: 2849

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5A, Rds On (Maks) @ Id, Vgs: 60 mOhm @ 4.1A, 10V, Vgs (th) (Maks) @ Id: 2.2V @ 250µA,

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Vishay Siliconix

SI6973DQ-T1-GE3

bahagian bahagian: 2819

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.1A, Rds On (Maks) @ Id, Vgs: 30 mOhm @ 4.8A, 4.5V, Vgs (th) (Maks) @ Id: 450mV @ 250µA (Min),

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Vishay Siliconix

SI4972DY-T1-E3

bahagian bahagian: 2770

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 10.8A, 7.2A, Rds On (Maks) @ Id, Vgs: 14.5 mOhm @ 6A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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Vishay Siliconix

SI6967DQ-T1-GE3

bahagian bahagian: 2883

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 8V, Rds On (Maks) @ Id, Vgs: 30 mOhm @ 5A, 4.5V, Vgs (th) (Maks) @ Id: 450mV @ 250µA (Min),

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Vishay Siliconix

SIA921EDJ-T1-GE3

bahagian bahagian: 107104

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.5A, Rds On (Maks) @ Id, Vgs: 59 mOhm @ 3.6A, 4.5V, Vgs (th) (Maks) @ Id: 1.4V @ 250µA,

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Vishay Siliconix

SIB911DK-T1-GE3

bahagian bahagian: 2759

Jenis FET: 2 P-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.6A, Rds On (Maks) @ Id, Vgs: 295 mOhm @ 1.5A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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Vishay Siliconix

SI4340CDY-T1-E3

bahagian bahagian: 2692

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 14.1A, 20A, Rds On (Maks) @ Id, Vgs: 9.4 mOhm @ 11.5A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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SI6966EDQ-T1-GE3

bahagian bahagian: 3300

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Rds On (Maks) @ Id, Vgs: 30 mOhm @ 5.2A, 4.5V, Vgs (th) (Maks) @ Id: 600mV @ 250µA (Min),

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Vishay Siliconix

SI4563DY-T1-GE3

bahagian bahagian: 2834

Jenis FET: N and P-Channel, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8A, Rds On (Maks) @ Id, Vgs: 16 mOhm @ 5A, 10V, Vgs (th) (Maks) @ Id: 2V @ 250µA,

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Vishay Siliconix

SI4944DY-T1-E3

bahagian bahagian: 2773

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 9.3A, Rds On (Maks) @ Id, Vgs: 9.5 mOhm @ 12.2A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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Vishay Siliconix

SI1555DL-T1-E3

bahagian bahagian: 3341

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, 8V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 660mA, 570mA, Rds On (Maks) @ Id, Vgs: 385 mOhm @ 660mA, 4.5V, Vgs (th) (Maks) @ Id: 1.4V @ 250µA,

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Vishay Siliconix

SI1029X-T1-E3

bahagian bahagian: 2706

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 305mA, 190mA, Rds On (Maks) @ Id, Vgs: 1.4 Ohm @ 500mA, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

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Vishay Siliconix

SI4992EY-T1-GE3

bahagian bahagian: 3302

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 75V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.6A, Rds On (Maks) @ Id, Vgs: 48 mOhm @ 4.8A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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Vishay Siliconix

SI4923DY-T1-GE3

bahagian bahagian: 2800

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.2A, Rds On (Maks) @ Id, Vgs: 21 mOhm @ 8.3A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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Vishay Siliconix

SI4973DY-T1-E3

bahagian bahagian: 2800

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.8A, Rds On (Maks) @ Id, Vgs: 23 mOhm @ 7.6A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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Vishay Siliconix

SI7842DP-T1-E3

bahagian bahagian: 2760

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.3A, Rds On (Maks) @ Id, Vgs: 22 mOhm @ 7.5A, 10V, Vgs (th) (Maks) @ Id: 2.4V @ 250µA,

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Vishay Siliconix

SI4340DY-T1-E3

bahagian bahagian: 2736

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7.3A, 9.9A, Rds On (Maks) @ Id, Vgs: 12 mOhm @ 9.6A, 10V, Vgs (th) (Maks) @ Id: 2V @ 250µA,

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Vishay Siliconix

SI9926BDY-T1-E3

bahagian bahagian: 2741

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.2A, Rds On (Maks) @ Id, Vgs: 20 mOhm @ 8.2A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

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Vishay Siliconix

SI6981DQ-T1-E3

bahagian bahagian: 2748

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.1A, Rds On (Maks) @ Id, Vgs: 31 mOhm @ 4.8A, 4.5V, Vgs (th) (Maks) @ Id: 900mV @ 300µA,

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Vishay Siliconix

SI7925DN-T1-E3

bahagian bahagian: 2813

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.8A, Rds On (Maks) @ Id, Vgs: 42 mOhm @ 6.5A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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Vishay Siliconix

SI6544BDQ-T1-E3

bahagian bahagian: 2797

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.7A, 3.8A, Rds On (Maks) @ Id, Vgs: 43 mOhm @ 3.8A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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Vishay Siliconix

SI7540DP-T1-GE3

bahagian bahagian: 2788

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7.6A, 5.7A, Rds On (Maks) @ Id, Vgs: 17 mOhm @ 11.8A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

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Vishay Siliconix

SI4914DY-T1-E3

bahagian bahagian: 2801

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.5A, 5.7A, Rds On (Maks) @ Id, Vgs: 23 mOhm @ 7A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

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Vishay Siliconix

SI4906DY-T1-GE3

bahagian bahagian: 2837

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.6A, Rds On (Maks) @ Id, Vgs: 39 mOhm @ 5A, 10V, Vgs (th) (Maks) @ Id: 2.2V @ 250µA,

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Vishay Siliconix

SI7842DP-T1-GE3

bahagian bahagian: 2811

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.3A, Rds On (Maks) @ Id, Vgs: 22 mOhm @ 7.5A, 10V, Vgs (th) (Maks) @ Id: 2.4V @ 250µA,

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SI7218DN-T1-GE3

bahagian bahagian: 99158

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 24A, Rds On (Maks) @ Id, Vgs: 25 mOhm @ 8A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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Vishay Siliconix

SMMA511DJ-T1-GE3

bahagian bahagian: 2895

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.5A, Rds On (Maks) @ Id, Vgs: 40 mOhm @ 4.2A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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Vishay Siliconix

SI6924AEDQ-T1-GE3

bahagian bahagian: 2794

Jenis FET: 2 N-Channel (Dual) Common Drain, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 28V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.1A, Rds On (Maks) @ Id, Vgs: 33 mOhm @ 4.6A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

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