Transistor - FET, MOSFET - Susunan | Produk Semikonduktor Diskrit | 18

SIA928DJ-T1-GE3

bahagian bahagian: 170673

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.5A (Tc), Rds On (Maks) @ Id, Vgs: 25 mOhm @ 5A, 10V, Vgs (th) (Maks) @ Id: 2.2V @ 250µA,

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Vishay Siliconix

SQJ951EP-T1_GE3

bahagian bahagian: 123902

Jenis FET: 2 P-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 30A, Rds On (Maks) @ Id, Vgs: 17 mOhm @ 7.5A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

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Vishay Siliconix

SQ4917EY-T1_GE3

bahagian bahagian: 91342

Jenis FET: 2 P-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8A (Tc), Rds On (Maks) @ Id, Vgs: 48 mOhm @ 4.3A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

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Vishay Siliconix

SIA519EDJ-T1-GE3

bahagian bahagian: 128968

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.5A, Rds On (Maks) @ Id, Vgs: 40 mOhm @ 4.2A, 4.5V, Vgs (th) (Maks) @ Id: 1.4V @ 250µA,

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Vishay Siliconix

SIA922EDJ-T1-GE3

bahagian bahagian: 104410

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.5A, Rds On (Maks) @ Id, Vgs: 64 mOhm @ 3A, 4.5V, Vgs (th) (Maks) @ Id: 1.4V @ 250µA,

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Vishay Siliconix

SI9926CDY-T1-E3

bahagian bahagian: 125202

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8A, Rds On (Maks) @ Id, Vgs: 18 mOhm @ 8.3A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

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Vishay Siliconix

SQJ974EP-T1_GE3

bahagian bahagian: 141603

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 30A (Tc), Rds On (Maks) @ Id, Vgs: 25.5 mOhm @ 10A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

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Vishay Siliconix

SI5504BDC-T1-GE3

bahagian bahagian: 163985

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4A, 3.7A, Rds On (Maks) @ Id, Vgs: 65 mOhm @ 3.1A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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Vishay Siliconix

SI7288DP-T1-GE3

bahagian bahagian: 108168

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 20A, Rds On (Maks) @ Id, Vgs: 19 mOhm @ 10A, 10V, Vgs (th) (Maks) @ Id: 2.8V @ 250µA,

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Vishay Siliconix

SI7900AEDN-T1-E3

bahagian bahagian: 97121

Jenis FET: 2 N-Channel (Dual) Common Drain, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A, Rds On (Maks) @ Id, Vgs: 26 mOhm @ 8.5A, 4.5V, Vgs (th) (Maks) @ Id: 900mV @ 250µA,

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Vishay Siliconix

SI4214DDY-T1-GE3

bahagian bahagian: 102448

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8.5A, Rds On (Maks) @ Id, Vgs: 19.5 mOhm @ 8A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

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Vishay Siliconix

SI5935CDC-T1-GE3

bahagian bahagian: 154777

Jenis FET: 2 P-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4A, Rds On (Maks) @ Id, Vgs: 100 mOhm @ 3.1A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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Vishay Siliconix

SI5936DU-T1-GE3

bahagian bahagian: 193614

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A, Rds On (Maks) @ Id, Vgs: 30 mOhm @ 5A, 10V, Vgs (th) (Maks) @ Id: 2.2V @ 250µA,

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Vishay Siliconix

SI1025X-T1-GE3

bahagian bahagian: 121434

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 190mA, Rds On (Maks) @ Id, Vgs: 4 Ohm @ 500mA, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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Vishay Siliconix

SI9926CDY-T1-GE3

bahagian bahagian: 111109

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8A, Rds On (Maks) @ Id, Vgs: 18 mOhm @ 8.3A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

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Vishay Siliconix

SQJ504EP-T1_GE3

bahagian bahagian: 2528

Jenis FET: N and P-Channel, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 30A (Tc), Rds On (Maks) @ Id, Vgs: 7.5 mOhm @ 8A, 10V, 17 mOhm @ 8A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

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Vishay Siliconix

SI4816BDY-T1-GE3

bahagian bahagian: 93645

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.8A, 8.2A, Rds On (Maks) @ Id, Vgs: 18.5 mOhm @ 6.8A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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Vishay Siliconix

SI9945BDY-T1-GE3

bahagian bahagian: 172002

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.3A, Rds On (Maks) @ Id, Vgs: 58 mOhm @ 4.3A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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Vishay Siliconix

SQJ244EP-T1_GE3

bahagian bahagian: 2521

Jenis FET: 2 N-Channel (Dual) Asymmetrical, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 20A (Tc), 60A (Tc), Rds On (Maks) @ Id, Vgs: 11 mOhm @ 4A, 10V, 4.5 mOhm @ 10A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

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Vishay Siliconix

SI6562CDQ-T1-GE3

bahagian bahagian: 161237

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.7A, 6.1A, Rds On (Maks) @ Id, Vgs: 22 mOhm @ 5.7A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

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Vishay Siliconix

SI6913DQ-T1-GE3

bahagian bahagian: 172370

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.9A, Rds On (Maks) @ Id, Vgs: 21 mOhm @ 5.8A, 4.5V, Vgs (th) (Maks) @ Id: 900mV @ 400µA,

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Vishay Siliconix

SI4936CDY-T1-GE3

bahagian bahagian: 170890

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.8A, Rds On (Maks) @ Id, Vgs: 40 mOhm @ 5A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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Vishay Siliconix

SQJ202EP-T1_GE3

bahagian bahagian: 136680

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 20A, 60A, Rds On (Maks) @ Id, Vgs: 6.5 mOhm @ 15A, 10V, Vgs (th) (Maks) @ Id: 2V @ 250µA,

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Vishay Siliconix

SI7946ADP-T1-GE3

bahagian bahagian: 2605

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 150V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7.7A (Tc), Rds On (Maks) @ Id, Vgs: 186 mOhm @ 3A, 10V, Vgs (th) (Maks) @ Id: 3.5V @ 250µA,

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Vishay Siliconix

SI4943CDY-T1-GE3

bahagian bahagian: 89672

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8A, Rds On (Maks) @ Id, Vgs: 19.2 mOhm @ 8.3A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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Vishay Siliconix

SI7232DN-T1-GE3

bahagian bahagian: 199705

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 25A, Rds On (Maks) @ Id, Vgs: 16.4 mOhm @ 10A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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Vishay Siliconix

SI7938DP-T1-GE3

bahagian bahagian: 98652

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 60A, Rds On (Maks) @ Id, Vgs: 5.8 mOhm @ 18.5A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

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Vishay Siliconix

SI1900DL-T1-E3

bahagian bahagian: 163022

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 590mA, Rds On (Maks) @ Id, Vgs: 480 mOhm @ 590mA, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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Vishay Siliconix

SQJ980AEP-T1_GE3

bahagian bahagian: 152466

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 75V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 17A (Tc), Rds On (Maks) @ Id, Vgs: 50 mOhm @ 3.8A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

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Vishay Siliconix

SI7994DP-T1-GE3

bahagian bahagian: 37667

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 60A, Rds On (Maks) @ Id, Vgs: 5.6 mOhm @ 20A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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Vishay Siliconix

SI4559ADY-T1-E3

bahagian bahagian: 141967

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.3A, 3.9A, Rds On (Maks) @ Id, Vgs: 58 mOhm @ 4.3A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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Vishay Siliconix

SQ9945BEY-T1_GE3

bahagian bahagian: 163985

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.4A, Rds On (Maks) @ Id, Vgs: 64 mOhm @ 3.4A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

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Vishay Siliconix

SI7922DN-T1-E3

bahagian bahagian: 86587

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.8A, Rds On (Maks) @ Id, Vgs: 195 mOhm @ 2.5A, 10V, Vgs (th) (Maks) @ Id: 3.5V @ 250µA,

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Vishay Siliconix

SIA923AEDJ-T1-GE3

bahagian bahagian: 138927

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.5A, Rds On (Maks) @ Id, Vgs: 54 mOhm @ 3.8A, 4.5V, Vgs (th) (Maks) @ Id: 900mV @ 250µA,

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Vishay Siliconix

SQJ968EP-T1_GE3

bahagian bahagian: 165139

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 23.5A (Tc), Rds On (Maks) @ Id, Vgs: 33.6 mOhm @ 4.8A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

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Vishay Siliconix

SIZ710DT-T1-GE3

bahagian bahagian: 110666

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 16A, 35A, Rds On (Maks) @ Id, Vgs: 6.8 mOhm @ 19A, 10V, Vgs (th) (Maks) @ Id: 2.2V @ 250µA,

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