Diod - Zener - Bujang | Produk Semikonduktor Diskrit | 100

BZX84B3V0-E3-08

bahagian bahagian: 123532

Voltan - Zener (Nom) (Vz): 3V, Toleransi: ±2%, Kuasa - Maks: 300mW, Impedans (Maks) (Zzt): 95 Ohms, Semasa - Kebocoran Terbalik @ Vr: 10µA @ 1V,

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Vishay Semiconductor Diodes Division

BZX84B4V7-E3-08

bahagian bahagian: 165453

Voltan - Zener (Nom) (Vz): 4.7V, Toleransi: ±2%, Kuasa - Maks: 300mW, Impedans (Maks) (Zzt): 80 Ohms, Semasa - Kebocoran Terbalik @ Vr: 3µA @ 2V,

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Vishay Semiconductor Diodes Division

BZX84B8V2-E3-08

bahagian bahagian: 133193

Voltan - Zener (Nom) (Vz): 8.2V, Toleransi: ±2%, Kuasa - Maks: 300mW, Impedans (Maks) (Zzt): 15 Ohms, Semasa - Kebocoran Terbalik @ Vr: 700nA @ 5V,

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Vishay Semiconductor Diodes Division

BZX84B3V9-E3-08

bahagian bahagian: 101189

Voltan - Zener (Nom) (Vz): 3.9V, Toleransi: ±2%, Kuasa - Maks: 300mW, Impedans (Maks) (Zzt): 90 Ohms, Semasa - Kebocoran Terbalik @ Vr: 3µA @ 1V,

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Vishay Semiconductor Diodes Division

BZX84B3V6-E3-08

bahagian bahagian: 170554

Voltan - Zener (Nom) (Vz): 3.6V, Toleransi: ±2%, Kuasa - Maks: 300mW, Impedans (Maks) (Zzt): 90 Ohms, Semasa - Kebocoran Terbalik @ Vr: 5µA @ 1V,

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Vishay Semiconductor Diodes Division

BZX84B33-E3-08

bahagian bahagian: 160227

Voltan - Zener (Nom) (Vz): 33V, Toleransi: ±2%, Kuasa - Maks: 300mW, Impedans (Maks) (Zzt): 80 Ohms, Semasa - Kebocoran Terbalik @ Vr: 50nA @ 23.1V,

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Vishay Semiconductor Diodes Division

BZX84B16-E3-08

bahagian bahagian: 177950

Voltan - Zener (Nom) (Vz): 16V, Toleransi: ±2%, Kuasa - Maks: 300mW, Impedans (Maks) (Zzt): 40 Ohms, Semasa - Kebocoran Terbalik @ Vr: 50nA @ 11.2V,

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Vishay Semiconductor Diodes Division

BZX84B7V5-E3-08

bahagian bahagian: 181653

Voltan - Zener (Nom) (Vz): 7.5V, Toleransi: ±2%, Kuasa - Maks: 300mW, Impedans (Maks) (Zzt): 15 Ohms, Semasa - Kebocoran Terbalik @ Vr: 1µA @ 5V,

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Vishay Semiconductor Diodes Division

BZX84B10-E3-08

bahagian bahagian: 199232

Voltan - Zener (Nom) (Vz): 10V, Toleransi: ±2%, Kuasa - Maks: 300mW, Impedans (Maks) (Zzt): 20 Ohms, Semasa - Kebocoran Terbalik @ Vr: 200nA @ 7V,

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Vishay Semiconductor Diodes Division

BZX84B2V7-E3-08

bahagian bahagian: 100834

Voltan - Zener (Nom) (Vz): 2.7V, Toleransi: ±2%, Kuasa - Maks: 300mW, Impedans (Maks) (Zzt): 100 Ohms, Semasa - Kebocoran Terbalik @ Vr: 20µA @ 1V,

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Vishay Semiconductor Diodes Division

BZX84B5V6-E3-08

bahagian bahagian: 196982

Voltan - Zener (Nom) (Vz): 5.6V, Toleransi: ±2%, Kuasa - Maks: 300mW, Impedans (Maks) (Zzt): 40 Ohms, Semasa - Kebocoran Terbalik @ Vr: 1µA @ 2V,

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Vishay Semiconductor Diodes Division

BZX84C27-HE3-08

bahagian bahagian: 125153

Voltan - Zener (Nom) (Vz): 27V, Toleransi: ±5%, Kuasa - Maks: 300mW, Impedans (Maks) (Zzt): 80 Ohms, Semasa - Kebocoran Terbalik @ Vr: 50nA @ 18.9V,

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Vishay Semiconductor Diodes Division

BZX84C15-HE3-08

bahagian bahagian: 142909

Voltan - Zener (Nom) (Vz): 15V, Toleransi: ±5%, Kuasa - Maks: 300mW, Impedans (Maks) (Zzt): 30 Ohms, Semasa - Kebocoran Terbalik @ Vr: 50nA @ 10.5V,

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Vishay Semiconductor Diodes Division

BZX84C5V1-HE3-08

bahagian bahagian: 195140

Voltan - Zener (Nom) (Vz): 5.1V, Toleransi: ±5%, Kuasa - Maks: 300mW, Impedans (Maks) (Zzt): 60 Ohms, Semasa - Kebocoran Terbalik @ Vr: 2µA @ 2V,

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Vishay Semiconductor Diodes Division

BZX84C12-HE3-08

bahagian bahagian: 111091

Voltan - Zener (Nom) (Vz): 12V, Toleransi: ±5%, Kuasa - Maks: 300mW, Impedans (Maks) (Zzt): 25 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 8V,

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Vishay Semiconductor Diodes Division

BZX84C9V1-HE3-08

bahagian bahagian: 191674

Voltan - Zener (Nom) (Vz): 9.1V, Toleransi: ±5%, Kuasa - Maks: 300mW, Impedans (Maks) (Zzt): 15 Ohms, Semasa - Kebocoran Terbalik @ Vr: 500nA @ 6V,

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Vishay Semiconductor Diodes Division

BZX84C16-HE3-08

bahagian bahagian: 154254

Voltan - Zener (Nom) (Vz): 16V, Toleransi: ±5%, Kuasa - Maks: 300mW, Impedans (Maks) (Zzt): 40 Ohms, Semasa - Kebocoran Terbalik @ Vr: 50nA @ 11.2V,

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Vishay Semiconductor Diodes Division

BZX84C5V6-HE3-08

bahagian bahagian: 127608

Voltan - Zener (Nom) (Vz): 5.6V, Toleransi: ±5%, Kuasa - Maks: 300mW, Impedans (Maks) (Zzt): 40 Ohms, Semasa - Kebocoran Terbalik @ Vr: 1µA @ 2V,

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Vishay Semiconductor Diodes Division

BZX84C5V6-E3-08

bahagian bahagian: 199260

Voltan - Zener (Nom) (Vz): 5.6V, Toleransi: ±5%, Kuasa - Maks: 300mW, Impedans (Maks) (Zzt): 40 Ohms, Semasa - Kebocoran Terbalik @ Vr: 1µA @ 2V,

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Vishay Semiconductor Diodes Division

BZX84C30-E3-08

bahagian bahagian: 192734

Voltan - Zener (Nom) (Vz): 30V, Toleransi: ±5%, Kuasa - Maks: 300mW, Impedans (Maks) (Zzt): 80 Ohms, Semasa - Kebocoran Terbalik @ Vr: 50nA @ 21V,

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Vishay Semiconductor Diodes Division

BZX84C3V6-E3-08

bahagian bahagian: 162929

Voltan - Zener (Nom) (Vz): 3.6V, Toleransi: ±5%, Kuasa - Maks: 300mW, Impedans (Maks) (Zzt): 90 Ohms, Semasa - Kebocoran Terbalik @ Vr: 5µA @ 1V,

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Vishay Semiconductor Diodes Division

BZX84C3V9-E3-08

bahagian bahagian: 194612

Voltan - Zener (Nom) (Vz): 3.9V, Toleransi: ±5%, Kuasa - Maks: 300mW, Impedans (Maks) (Zzt): 90 Ohms, Semasa - Kebocoran Terbalik @ Vr: 3µA @ 1V,

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Vishay Semiconductor Diodes Division

BZX84C5V1-E3-08

bahagian bahagian: 147888

Voltan - Zener (Nom) (Vz): 5.1V, Toleransi: ±5%, Kuasa - Maks: 300mW, Impedans (Maks) (Zzt): 60 Ohms, Semasa - Kebocoran Terbalik @ Vr: 2µA @ 2V,

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Vishay Semiconductor Diodes Division

BZX84C75-E3-08

bahagian bahagian: 177072

Voltan - Zener (Nom) (Vz): 75V, Toleransi: ±5%, Kuasa - Maks: 300mW, Impedans (Maks) (Zzt): 255 Ohms, Semasa - Kebocoran Terbalik @ Vr: 50nA @ 52.5V,

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Vishay Semiconductor Diodes Division

BZX84C6V8-E3-08

bahagian bahagian: 121784

Voltan - Zener (Nom) (Vz): 6.8V, Toleransi: ±5%, Kuasa - Maks: 300mW, Impedans (Maks) (Zzt): 15 Ohms, Semasa - Kebocoran Terbalik @ Vr: 3µA @ 4V,

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Vishay Semiconductor Diodes Division

BZX84C11-E3-08

bahagian bahagian: 113582

Voltan - Zener (Nom) (Vz): 11V, Toleransi: ±5%, Kuasa - Maks: 300mW, Impedans (Maks) (Zzt): 20 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 8V,

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Vishay Semiconductor Diodes Division

BZX84C4V7-E3-08

bahagian bahagian: 155737

Voltan - Zener (Nom) (Vz): 4.7V, Toleransi: ±6%, Kuasa - Maks: 300mW, Impedans (Maks) (Zzt): 80 Ohms, Semasa - Kebocoran Terbalik @ Vr: 3µA @ 2V,

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Vishay Semiconductor Diodes Division

BZX84B33-G3-08

bahagian bahagian: 164436

Voltan - Zener (Nom) (Vz): 33V, Toleransi: ±2%, Kuasa - Maks: 300mW, Impedans (Maks) (Zzt): 80 Ohms, Semasa - Kebocoran Terbalik @ Vr: 50nA @ 23.1V,

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Vishay Semiconductor Diodes Division

BZX84B30-G3-08

bahagian bahagian: 160004

Voltan - Zener (Nom) (Vz): 30V, Toleransi: ±2%, Kuasa - Maks: 300mW, Impedans (Maks) (Zzt): 80 Ohms, Semasa - Kebocoran Terbalik @ Vr: 50nA @ 21V,

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Vishay Semiconductor Diodes Division

BZX84B2V4-G3-18

bahagian bahagian: 165360

Voltan - Zener (Nom) (Vz): 2.4V, Toleransi: ±2%, Kuasa - Maks: 300mW, Impedans (Maks) (Zzt): 100 Ohms, Semasa - Kebocoran Terbalik @ Vr: 50µA @ 1V,

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Vishay Semiconductor Diodes Division

BZX84B2V7-G3-08

bahagian bahagian: 131897

Voltan - Zener (Nom) (Vz): 2.7V, Toleransi: ±2%, Kuasa - Maks: 300mW, Impedans (Maks) (Zzt): 100 Ohms, Semasa - Kebocoran Terbalik @ Vr: 20µA @ 1V,

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Vishay Semiconductor Diodes Division

BZX84B33-G3-18

bahagian bahagian: 137106

Voltan - Zener (Nom) (Vz): 33V, Toleransi: ±2%, Kuasa - Maks: 300mW, Impedans (Maks) (Zzt): 80 Ohms, Semasa - Kebocoran Terbalik @ Vr: 50nA @ 23.1V,

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Vishay Semiconductor Diodes Division

BZX84B3V3-G3-08

bahagian bahagian: 114334

Voltan - Zener (Nom) (Vz): 3.3V, Toleransi: ±2%, Kuasa - Maks: 300mW, Impedans (Maks) (Zzt): 95 Ohms, Semasa - Kebocoran Terbalik @ Vr: 5µA @ 1V,

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Vishay Semiconductor Diodes Division

BZX84B36-G3-08

bahagian bahagian: 194263

Voltan - Zener (Nom) (Vz): 36V, Toleransi: ±2%, Kuasa - Maks: 300mW, Impedans (Maks) (Zzt): 90 Ohms, Semasa - Kebocoran Terbalik @ Vr: 50nA @ 25.2V,

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Vishay Semiconductor Diodes Division

BZX84B24-G3-18

bahagian bahagian: 158758

Voltan - Zener (Nom) (Vz): 23.5V, Toleransi: ±2%, Kuasa - Maks: 300mW, Impedans (Maks) (Zzt): 70 Ohms, Semasa - Kebocoran Terbalik @ Vr: 50nA @ 16.8V,

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Vishay Semiconductor Diodes Division

BZX84B15-G3-18

bahagian bahagian: 172687

Voltan - Zener (Nom) (Vz): 15V, Toleransi: ±2%, Kuasa - Maks: 300mW, Impedans (Maks) (Zzt): 30 Ohms, Semasa - Kebocoran Terbalik @ Vr: 50nA @ 10.5V,

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