Diod - Zener - Bujang | Produk Semikonduktor Diskrit | 100

BZX384B6V2-G3-08

bahagian bahagian: 175262

Voltan - Zener (Nom) (Vz): 6.2V, Toleransi: ±2%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 10 Ohms, Semasa - Kebocoran Terbalik @ Vr: 3µA @ 4V,

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Vishay Semiconductor Diodes Division

BZT52C6V2-HE3-08

bahagian bahagian: 168913

Voltan - Zener (Nom) (Vz): 6.2V, Toleransi: ±5%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 4.8 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 2V,

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Vishay Semiconductor Diodes Division

BZX384B2V4-G3-18

bahagian bahagian: 166266

Voltan - Zener (Nom) (Vz): 2.4V, Toleransi: ±2%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 100 Ohms, Semasa - Kebocoran Terbalik @ Vr: 50µA @ 1V,

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Vishay Semiconductor Diodes Division

BZX384B5V1-E3-18

bahagian bahagian: 199718

Voltan - Zener (Nom) (Vz): 5.1V, Toleransi: ±2%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 60 Ohms, Semasa - Kebocoran Terbalik @ Vr: 2µA @ 2V,

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Vishay Semiconductor Diodes Division

BZT52B62-HE3-08

bahagian bahagian: 152807

Voltan - Zener (Nom) (Vz): 62V, Toleransi: ±2%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 150 Ohms,

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Vishay Semiconductor Diodes Division

BZX384C6V2-HE3-18

bahagian bahagian: 187244

Voltan - Zener (Nom) (Vz): 6.2V, Toleransi: ±5%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 10 Ohms, Semasa - Kebocoran Terbalik @ Vr: 3µA @ 4V,

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Vishay Semiconductor Diodes Division

BZX384B4V7-HE3-18

bahagian bahagian: 165747

Voltan - Zener (Nom) (Vz): 4.7V, Toleransi: ±2%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 80 Ohms, Semasa - Kebocoran Terbalik @ Vr: 3µA @ 2V,

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Vishay Semiconductor Diodes Division

BZT52C56-HE3-08

bahagian bahagian: 119407

Voltan - Zener (Nom) (Vz): 56V, Toleransi: ±5%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 135 Ohms,

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Vishay Semiconductor Diodes Division

BZT52B10-G3-18

bahagian bahagian: 141922

Voltan - Zener (Nom) (Vz): 10V, Toleransi: ±2%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 5.2 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 7.5V,

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Vishay Semiconductor Diodes Division

BZX384B27-G3-08

bahagian bahagian: 193844

Voltan - Zener (Nom) (Vz): 27V, Toleransi: ±2%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 80 Ohms, Semasa - Kebocoran Terbalik @ Vr: 50nA @ 18.9V,

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Vishay Semiconductor Diodes Division

BZT52C22-G3-18

bahagian bahagian: 144754

Voltan - Zener (Nom) (Vz): 22V, Toleransi: ±5%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 25 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 17V,

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Vishay Semiconductor Diodes Division

BZT52C3V0-E3-18

bahagian bahagian: 117888

Voltan - Zener (Nom) (Vz): 3V, Toleransi: ±5%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 80 Ohms,

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Vishay Semiconductor Diodes Division

BZX384C2V4-HE3-18

bahagian bahagian: 114141

Voltan - Zener (Nom) (Vz): 2.4V, Toleransi: ±5%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 100 Ohms, Semasa - Kebocoran Terbalik @ Vr: 50µA @ 1V,

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Vishay Semiconductor Diodes Division

BZX384C13-HE3-08

bahagian bahagian: 153520

Voltan - Zener (Nom) (Vz): 13V, Toleransi: ±5%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 30 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 8V,

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Vishay Semiconductor Diodes Division

BZX384C47-G3-18

bahagian bahagian: 175154

Voltan - Zener (Nom) (Vz): 47V, Toleransi: ±5%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 170 Ohms, Semasa - Kebocoran Terbalik @ Vr: 50nA @ 32.9V,

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Vishay Semiconductor Diodes Division

BZX384C39-HE3-18

bahagian bahagian: 135894

Voltan - Zener (Nom) (Vz): 39V, Toleransi: ±5%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 130 Ohms, Semasa - Kebocoran Terbalik @ Vr: 50nA @ 27.3V,

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Vishay Semiconductor Diodes Division

BZX384C30-G3-18

bahagian bahagian: 121287

Voltan - Zener (Nom) (Vz): 30V, Toleransi: ±5%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 80 Ohms, Semasa - Kebocoran Terbalik @ Vr: 50nA @ 21V,

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Vishay Semiconductor Diodes Division

BZX384C24-HE3-08

bahagian bahagian: 102205

Voltan - Zener (Nom) (Vz): 24V, Toleransi: ±5%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 70 Ohms, Semasa - Kebocoran Terbalik @ Vr: 50nA @ 16.8V,

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Vishay Semiconductor Diodes Division

BZX384B15-HE3-18

bahagian bahagian: 160995

Voltan - Zener (Nom) (Vz): 15V, Toleransi: ±2%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 30 Ohms, Semasa - Kebocoran Terbalik @ Vr: 50nA @ 10.5V,

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Vishay Semiconductor Diodes Division

BZX384C51-G3-08

bahagian bahagian: 127366

Voltan - Zener (Nom) (Vz): 51V, Toleransi: ±5%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 180 Ohms, Semasa - Kebocoran Terbalik @ Vr: 50nA @ 35.7V,

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Vishay Semiconductor Diodes Division

BZX384C3V9-E3-18

bahagian bahagian: 131513

Voltan - Zener (Nom) (Vz): 3.9V, Toleransi: ±5%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 90 Ohms, Semasa - Kebocoran Terbalik @ Vr: 5µA @ 1V,

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Vishay Semiconductor Diodes Division

BZX384C24-E3-08

bahagian bahagian: 109973

Voltan - Zener (Nom) (Vz): 24V, Toleransi: ±5%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 70 Ohms, Semasa - Kebocoran Terbalik @ Vr: 50nA @ 16.8V,

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Vishay Semiconductor Diodes Division

BZX384B4V7-G3-18

bahagian bahagian: 149990

Voltan - Zener (Nom) (Vz): 4.7V, Toleransi: ±2%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 80 Ohms, Semasa - Kebocoran Terbalik @ Vr: 3µA @ 2V,

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Vishay Semiconductor Diodes Division

BZX384B16-G3-08

bahagian bahagian: 120487

Voltan - Zener (Nom) (Vz): 16V, Toleransi: ±2%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 40 Ohms, Semasa - Kebocoran Terbalik @ Vr: 50nA @ 11.2V,

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Vishay Semiconductor Diodes Division

BZT52C6V8-E3-18

bahagian bahagian: 113350

Voltan - Zener (Nom) (Vz): 6.8V, Toleransi: ±5%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 4.5 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 3V,

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Vishay Semiconductor Diodes Division

BZT52C3V3-E3-18

bahagian bahagian: 164057

Voltan - Zener (Nom) (Vz): 3.3V, Toleransi: ±5%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 80 Ohms,

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Vishay Semiconductor Diodes Division

BZX384B33-G3-18

bahagian bahagian: 182664

Voltan - Zener (Nom) (Vz): 33V, Toleransi: ±2%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 80 Ohms, Semasa - Kebocoran Terbalik @ Vr: 50nA @ 23.1V,

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Vishay Semiconductor Diodes Division

BZX384B15-G3-08

bahagian bahagian: 153254

Voltan - Zener (Nom) (Vz): 15V, Toleransi: ±2%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 30 Ohms, Semasa - Kebocoran Terbalik @ Vr: 50nA @ 10.5V,

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Vishay Semiconductor Diodes Division

BZX384B2V7-E3-18

bahagian bahagian: 119652

Voltan - Zener (Nom) (Vz): 2.7V, Toleransi: ±2%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 100 Ohms, Semasa - Kebocoran Terbalik @ Vr: 20nA @ 1V,

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Vishay Semiconductor Diodes Division

BZX384C4V3-HE3-18

bahagian bahagian: 170175

Voltan - Zener (Nom) (Vz): 4.3V, Toleransi: ±5%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 90 Ohms, Semasa - Kebocoran Terbalik @ Vr: 3µA @ 1V,

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Vishay Semiconductor Diodes Division

BZX384C20-G3-08

bahagian bahagian: 180353

Voltan - Zener (Nom) (Vz): 20V, Toleransi: ±5%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 55 Ohms, Semasa - Kebocoran Terbalik @ Vr: 50nA @ 14V,

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Vishay Semiconductor Diodes Division

BZX384C6V2-E3-08

bahagian bahagian: 141201

Voltan - Zener (Nom) (Vz): 6.2V, Toleransi: ±5%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 10 Ohms, Semasa - Kebocoran Terbalik @ Vr: 3µA @ 4V,

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Vishay Semiconductor Diodes Division

BZX384B5V6-HE3-18

bahagian bahagian: 196554

Voltan - Zener (Nom) (Vz): 5.6V, Toleransi: ±2%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 40 Ohms, Semasa - Kebocoran Terbalik @ Vr: 1µA @ 2V,

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Vishay Semiconductor Diodes Division

BZT52B3V6-HE3-08

bahagian bahagian: 136964

Voltan - Zener (Nom) (Vz): 3.6V, Toleransi: ±2%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 80 Ohms,

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Vishay Semiconductor Diodes Division

BZX384B43-HE3-08

bahagian bahagian: 184623

Voltan - Zener (Nom) (Vz): 43V, Toleransi: ±2%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 150 Ohms, Semasa - Kebocoran Terbalik @ Vr: 50nA @ 30.1V,

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Vishay Semiconductor Diodes Division

BZT52B36-E3-18

bahagian bahagian: 136150

Voltan - Zener (Nom) (Vz): 36V, Toleransi: ±2%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 40 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 27V,

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