Diod - Zener - Bujang | Produk Semikonduktor Diskrit | 100

BZT52B11-E3-18

bahagian bahagian: 169681

Voltan - Zener (Nom) (Vz): 11V, Toleransi: ±2%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 6 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 8.5V,

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Vishay Semiconductor Diodes Division

BZX384B36-G3-18

bahagian bahagian: 101824

Voltan - Zener (Nom) (Vz): 36V, Toleransi: ±2%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 90 Ohms, Semasa - Kebocoran Terbalik @ Vr: 50nA @ 25.2V,

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Vishay Semiconductor Diodes Division

BZT52B15-E3-08

bahagian bahagian: 142176

Voltan - Zener (Nom) (Vz): 15V, Toleransi: ±2%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 11 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 11V,

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Vishay Semiconductor Diodes Division

BZX384B51-HE3-18

bahagian bahagian: 157181

Voltan - Zener (Nom) (Vz): 51V, Toleransi: ±2%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 180 Ohms, Semasa - Kebocoran Terbalik @ Vr: 50nA @ 35.7V,

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Vishay Semiconductor Diodes Division

BZX384B6V8-G3-18

bahagian bahagian: 117116

Voltan - Zener (Nom) (Vz): 6.8V, Toleransi: ±2%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 15 Ohms, Semasa - Kebocoran Terbalik @ Vr: 2µA @ 4V,

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Vishay Semiconductor Diodes Division

BZT52B2V4-E3-08

bahagian bahagian: 183045

Voltan - Zener (Nom) (Vz): 2.4V, Toleransi: ±2%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 85 Ohms,

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Vishay Semiconductor Diodes Division

BZT52C2V4-HE3-08

bahagian bahagian: 144985

Voltan - Zener (Nom) (Vz): 2.4V, Toleransi: ±5%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 85 Ohms,

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Vishay Semiconductor Diodes Division

BZT52C62-HE3-08

bahagian bahagian: 156213

Voltan - Zener (Nom) (Vz): 62V, Toleransi: ±5%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 150 Ohms,

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Vishay Semiconductor Diodes Division

BZX384C3V3-HE3-18

bahagian bahagian: 192029

Voltan - Zener (Nom) (Vz): 3.3V, Toleransi: ±5%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 95 Ohms, Semasa - Kebocoran Terbalik @ Vr: 5µA @ 1V,

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Vishay Semiconductor Diodes Division

BZT52B5V1-G3-18

bahagian bahagian: 124274

Voltan - Zener (Nom) (Vz): 5.1V, Toleransi: ±2%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 30 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 800mV,

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Vishay Semiconductor Diodes Division

BZT52C16-HE3-08

bahagian bahagian: 179618

Voltan - Zener (Nom) (Vz): 16V, Toleransi: ±5%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 13 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 12V,

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Vishay Semiconductor Diodes Division

BZT52C56-G3-08

bahagian bahagian: 145641

Voltan - Zener (Nom) (Vz): 56V, Toleransi: ±5%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 135 Ohms,

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Vishay Semiconductor Diodes Division

BZX384C62-HE3-18

bahagian bahagian: 116082

Voltan - Zener (Nom) (Vz): 62V, Toleransi: ±5%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 215 Ohms, Semasa - Kebocoran Terbalik @ Vr: 50nA @ 43.4V,

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Vishay Semiconductor Diodes Division

BZX384B30-E3-18

bahagian bahagian: 170971

Voltan - Zener (Nom) (Vz): 30V, Toleransi: ±2%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 80 Ohms, Semasa - Kebocoran Terbalik @ Vr: 50nA @ 21V,

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Vishay Semiconductor Diodes Division

BZX384B4V7-HE3-08

bahagian bahagian: 163245

Voltan - Zener (Nom) (Vz): 4.7V, Toleransi: ±2%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 80 Ohms, Semasa - Kebocoran Terbalik @ Vr: 3µA @ 2V,

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Vishay Semiconductor Diodes Division

BZX384C16-E3-08

bahagian bahagian: 143881

Voltan - Zener (Nom) (Vz): 16V, Toleransi: ±5%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 40 Ohms, Semasa - Kebocoran Terbalik @ Vr: 50nA @ 11.2V,

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Vishay Semiconductor Diodes Division

BZT52C75-HE3-08

bahagian bahagian: 144592

Voltan - Zener (Nom) (Vz): 75V, Toleransi: ±5%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 250 Ohms,

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Vishay Semiconductor Diodes Division

BZT52B56-G3-18

bahagian bahagian: 197681

Voltan - Zener (Nom) (Vz): 56V, Toleransi: ±2%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 135 Ohms,

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Vishay Semiconductor Diodes Division

BZX384C22-HE3-18

bahagian bahagian: 170667

Voltan - Zener (Nom) (Vz): 22V, Toleransi: ±5%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 55 Ohms, Semasa - Kebocoran Terbalik @ Vr: 50nA @ 15.4V,

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Vishay Semiconductor Diodes Division

BZX384B20-E3-18

bahagian bahagian: 147671

Voltan - Zener (Nom) (Vz): 20V, Toleransi: ±2%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 55 Ohms, Semasa - Kebocoran Terbalik @ Vr: 50nA @ 14V,

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Vishay Semiconductor Diodes Division

BZX384C2V4-E3-18

bahagian bahagian: 115478

Voltan - Zener (Nom) (Vz): 2.4V, Toleransi: ±5%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 100 Ohms, Semasa - Kebocoran Terbalik @ Vr: 50µA @ 1V,

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Vishay Semiconductor Diodes Division

BZT52B2V4-G3-18

bahagian bahagian: 117648

Voltan - Zener (Nom) (Vz): 2.4V, Toleransi: ±2%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 85 Ohms,

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Vishay Semiconductor Diodes Division

BZT52C18-HE3-08

bahagian bahagian: 157682

Voltan - Zener (Nom) (Vz): 18V, Toleransi: ±5%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 18 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 14V,

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Vishay Semiconductor Diodes Division

BZX384B15-E3-18

bahagian bahagian: 126001

Voltan - Zener (Nom) (Vz): 15V, Toleransi: ±2%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 30 Ohms, Semasa - Kebocoran Terbalik @ Vr: 50nA @ 10.5V,

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Vishay Semiconductor Diodes Division

BZT52B24-HE3-18

bahagian bahagian: 125017

Voltan - Zener (Nom) (Vz): 24V, Toleransi: ±2%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 28 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 18V,

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Vishay Semiconductor Diodes Division

BZT52C30-HE3-08

bahagian bahagian: 171658

Voltan - Zener (Nom) (Vz): 30V, Toleransi: ±5%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 35 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 22.5V,

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Vishay Semiconductor Diodes Division

BZT52B6V8-E3-18

bahagian bahagian: 194549

Voltan - Zener (Nom) (Vz): 6.8V, Toleransi: ±2%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 4.5 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 3V,

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Vishay Semiconductor Diodes Division

BZT52B75-G3-08

bahagian bahagian: 115113

Voltan - Zener (Nom) (Vz): 75V, Toleransi: ±2%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 250 Ohms,

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Vishay Semiconductor Diodes Division

BZT52B39-HE3-08

bahagian bahagian: 185486

Voltan - Zener (Nom) (Vz): 39V, Toleransi: ±2%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 50 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 29V,

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Vishay Semiconductor Diodes Division

BZT52C15-HE3-18

bahagian bahagian: 174027

Voltan - Zener (Nom) (Vz): 15V, Toleransi: ±5%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 11 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 11V,

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Vishay Semiconductor Diodes Division

BZX384C51-HE3-08

bahagian bahagian: 184190

Voltan - Zener (Nom) (Vz): 51V, Toleransi: ±5%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 180 Ohms, Semasa - Kebocoran Terbalik @ Vr: 50nA @ 35.7V,

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Vishay Semiconductor Diodes Division

BZT52B2V4-HE3-08

bahagian bahagian: 151575

Voltan - Zener (Nom) (Vz): 2.4V, Toleransi: ±2%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 85 Ohms,

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Vishay Semiconductor Diodes Division

BZT52C43-G3-18

bahagian bahagian: 187630

Voltan - Zener (Nom) (Vz): 43V, Toleransi: ±5%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 60 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 32V,

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Vishay Semiconductor Diodes Division

BZT52C2V4-HE3-18

bahagian bahagian: 151943

Voltan - Zener (Nom) (Vz): 2.4V, Toleransi: ±5%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 85 Ohms,

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Vishay Semiconductor Diodes Division

BZX384B13-E3-18

bahagian bahagian: 186731

Voltan - Zener (Nom) (Vz): 13V, Toleransi: ±2%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 30 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 8V,

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Vishay Semiconductor Diodes Division

BZX384C7V5-G3-08

bahagian bahagian: 185787

Voltan - Zener (Nom) (Vz): 7.5V, Toleransi: ±5%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 15 Ohms, Semasa - Kebocoran Terbalik @ Vr: 1µA @ 5V,

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