Diod - Zener - Bujang | Produk Semikonduktor Diskrit | 100

BZT52C16-G3-18

bahagian bahagian: 193475

Voltan - Zener (Nom) (Vz): 16V, Toleransi: ±5%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 13 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 12V,

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Vishay Semiconductor Diodes Division

BZX384C62-G3-18

bahagian bahagian: 191853

Voltan - Zener (Nom) (Vz): 62V, Toleransi: ±5%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 215 Ohms, Semasa - Kebocoran Terbalik @ Vr: 50nA @ 43.4V,

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Vishay Semiconductor Diodes Division

BZX384C39-E3-18

bahagian bahagian: 135546

Voltan - Zener (Nom) (Vz): 39V, Toleransi: ±5%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 130 Ohms, Semasa - Kebocoran Terbalik @ Vr: 50nA @ 27.3V,

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Vishay Semiconductor Diodes Division

BZT52B9V1-E3-08

bahagian bahagian: 185684

Voltan - Zener (Nom) (Vz): 9.1V, Toleransi: ±2%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 4.8 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 7V,

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Vishay Semiconductor Diodes Division

BZX384C18-G3-08

bahagian bahagian: 193211

Voltan - Zener (Nom) (Vz): 18V, Toleransi: ±5%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 45 Ohms, Semasa - Kebocoran Terbalik @ Vr: 50nA @ 12.6V,

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Vishay Semiconductor Diodes Division

BZT52C18-G3-08

bahagian bahagian: 144858

Voltan - Zener (Nom) (Vz): 18V, Toleransi: ±5%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 18 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 14V,

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Vishay Semiconductor Diodes Division

BZT52B43-G3-18

bahagian bahagian: 172759

Voltan - Zener (Nom) (Vz): 43V, Toleransi: ±2%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 60 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 32V,

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Vishay Semiconductor Diodes Division

BZT52B27-E3-18

bahagian bahagian: 126768

Voltan - Zener (Nom) (Vz): 27V, Toleransi: ±2%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 30 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 20V,

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Vishay Semiconductor Diodes Division

BZX384B51-G3-08

bahagian bahagian: 101509

Voltan - Zener (Nom) (Vz): 51V, Toleransi: ±2%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 180 Ohms, Semasa - Kebocoran Terbalik @ Vr: 50nA @ 35.7V,

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Vishay Semiconductor Diodes Division

BZT52C5V1-G3-08

bahagian bahagian: 167453

Voltan - Zener (Nom) (Vz): 5.1V, Toleransi: ±5%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 30 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 800mV,

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Vishay Semiconductor Diodes Division

BZT52B47-E3-08

bahagian bahagian: 130106

Voltan - Zener (Nom) (Vz): 47V, Toleransi: ±2%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 70 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 35V,

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Vishay Semiconductor Diodes Division

BZT52B10-G3-08

bahagian bahagian: 195713

Voltan - Zener (Nom) (Vz): 10V, Toleransi: ±2%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 5.2 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 7.5V,

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Vishay Semiconductor Diodes Division

BZX384B43-E3-08

bahagian bahagian: 172483

Voltan - Zener (Nom) (Vz): 43V, Toleransi: ±2%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 150 Ohms, Semasa - Kebocoran Terbalik @ Vr: 50nA @ 30.1V,

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Vishay Semiconductor Diodes Division

BZT52B18-G3-08

bahagian bahagian: 193876

Voltan - Zener (Nom) (Vz): 18V, Toleransi: ±2%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 18 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 14V,

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Vishay Semiconductor Diodes Division

BZX384B4V3-G3-08

bahagian bahagian: 101860

Voltan - Zener (Nom) (Vz): 4.3V, Toleransi: ±2%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 90 Ohms, Semasa - Kebocoran Terbalik @ Vr: 3µA @ 1V,

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Vishay Semiconductor Diodes Division

BZX384B11-HE3-08

bahagian bahagian: 142019

Voltan - Zener (Nom) (Vz): 11V, Toleransi: ±2%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 20 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 8V,

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Vishay Semiconductor Diodes Division

BZX384C8V2-E3-08

bahagian bahagian: 144360

Voltan - Zener (Nom) (Vz): 8.2V, Toleransi: ±5%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 15 Ohms, Semasa - Kebocoran Terbalik @ Vr: 700nA @ 5V,

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Vishay Semiconductor Diodes Division

BZX384B51-E3-18

bahagian bahagian: 149090

Voltan - Zener (Nom) (Vz): 51V, Toleransi: ±2%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 180 Ohms, Semasa - Kebocoran Terbalik @ Vr: 50nA @ 35.7V,

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Vishay Semiconductor Diodes Division

BZX384B12-E3-18

bahagian bahagian: 178439

Voltan - Zener (Nom) (Vz): 12V, Toleransi: ±2%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 25 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 8V,

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Vishay Semiconductor Diodes Division

BZX384B3V3-HE3-18

bahagian bahagian: 183902

Voltan - Zener (Nom) (Vz): 3.3V, Toleransi: ±2%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 95 Ohms, Semasa - Kebocoran Terbalik @ Vr: 5µA @ 1V,

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Vishay Semiconductor Diodes Division

BZX384B18-G3-08

bahagian bahagian: 122849

Voltan - Zener (Nom) (Vz): 18V, Toleransi: ±2%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 45 Ohms, Semasa - Kebocoran Terbalik @ Vr: 50nA @ 12.6V,

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Vishay Semiconductor Diodes Division

BZX384C16-HE3-18

bahagian bahagian: 106514

Voltan - Zener (Nom) (Vz): 16V, Toleransi: ±5%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 40 Ohms, Semasa - Kebocoran Terbalik @ Vr: 50nA @ 11.2V,

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Vishay Semiconductor Diodes Division

BZX384B13-HE3-18

bahagian bahagian: 133635

Voltan - Zener (Nom) (Vz): 13V, Toleransi: ±2%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 30 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 8V,

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Vishay Semiconductor Diodes Division

BZX384B8V2-G3-08

bahagian bahagian: 100632

Voltan - Zener (Nom) (Vz): 8.2V, Toleransi: ±2%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 15 Ohms, Semasa - Kebocoran Terbalik @ Vr: 700nA @ 5V,

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Vishay Semiconductor Diodes Division

BZT52B24-G3-18

bahagian bahagian: 183792

Voltan - Zener (Nom) (Vz): 24V, Toleransi: ±2%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 28 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 18V,

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Vishay Semiconductor Diodes Division

BZT52C6V8-HE3-18

bahagian bahagian: 155699

Voltan - Zener (Nom) (Vz): 6.8V, Toleransi: ±5%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 4.5 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 3V,

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Vishay Semiconductor Diodes Division

BZT52B27-HE3-18

bahagian bahagian: 127845

Voltan - Zener (Nom) (Vz): 27V, Toleransi: ±2%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 30 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 20V,

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Vishay Semiconductor Diodes Division

BZT52C3V0-HE3-18

bahagian bahagian: 105109

Voltan - Zener (Nom) (Vz): 3V, Toleransi: ±5%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 80 Ohms,

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Vishay Semiconductor Diodes Division

BZT52B3V6-E3-18

bahagian bahagian: 129305

Voltan - Zener (Nom) (Vz): 3.6V, Toleransi: ±2%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 80 Ohms,

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Vishay Semiconductor Diodes Division

BZX384C10-HE3-18

bahagian bahagian: 162265

Voltan - Zener (Nom) (Vz): 10V, Toleransi: ±5%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 20 Ohms, Semasa - Kebocoran Terbalik @ Vr: 200nA @ 7V,

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Vishay Semiconductor Diodes Division

BZT52B9V1-HE3-18

bahagian bahagian: 176410

Voltan - Zener (Nom) (Vz): 9.1V, Toleransi: ±2%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 4.8 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 7V,

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Vishay Semiconductor Diodes Division

BZX384B12-HE3-08

bahagian bahagian: 152177

Voltan - Zener (Nom) (Vz): 12V, Toleransi: ±2%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 25 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 8V,

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Vishay Semiconductor Diodes Division

BZX384C6V8-HE3-18

bahagian bahagian: 196596

Voltan - Zener (Nom) (Vz): 6.8V, Toleransi: ±5%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 15 Ohms, Semasa - Kebocoran Terbalik @ Vr: 2µA @ 4V,

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Vishay Semiconductor Diodes Division

BZT52C75-G3-08

bahagian bahagian: 101572

Voltan - Zener (Nom) (Vz): 75V, Toleransi: ±5%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 250 Ohms,

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Vishay Semiconductor Diodes Division

BZT52C24-HE3-18

bahagian bahagian: 141256

Voltan - Zener (Nom) (Vz): 24V, Toleransi: ±5%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 28 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 18V,

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Vishay Semiconductor Diodes Division

BZT52C3V9-G3-18

bahagian bahagian: 107272

Voltan - Zener (Nom) (Vz): 3.9V, Toleransi: ±5%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 80 Ohms,

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