Diod - Zener - Bujang | Produk Semikonduktor Diskrit | 100

BZT52C36-E3-18

bahagian bahagian: 104598

Voltan - Zener (Nom) (Vz): 36V, Toleransi: ±5%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 40 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 27V,

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Vishay Semiconductor Diodes Division

BZT52C51-HE3-18

bahagian bahagian: 103818

Voltan - Zener (Nom) (Vz): 51V, Toleransi: ±5%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 70 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 38V,

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Vishay Semiconductor Diodes Division

BZT52B36-G3-18

bahagian bahagian: 181486

Voltan - Zener (Nom) (Vz): 36V, Toleransi: ±2%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 40 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 27V,

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Vishay Semiconductor Diodes Division

BZT52B16-G3-08

bahagian bahagian: 112296

Voltan - Zener (Nom) (Vz): 16V, Toleransi: ±2%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 13 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 12V,

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Vishay Semiconductor Diodes Division

BZT52B6V2-G3-08

bahagian bahagian: 185820

Voltan - Zener (Nom) (Vz): 6.2V, Toleransi: ±2%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 4.8 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 2V,

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Vishay Semiconductor Diodes Division

BZT52B13-HE3-18

bahagian bahagian: 133704

Voltan - Zener (Nom) (Vz): 13V, Toleransi: ±2%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 9 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 10V,

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Vishay Semiconductor Diodes Division

BZT52B22-HE3-08

bahagian bahagian: 156912

Voltan - Zener (Nom) (Vz): 22V, Toleransi: ±2%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 25 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 17V,

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Vishay Semiconductor Diodes Division

BZX384B9V1-G3-18

bahagian bahagian: 114423

Voltan - Zener (Nom) (Vz): 9.1V, Toleransi: ±2%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 15 Ohms, Semasa - Kebocoran Terbalik @ Vr: 500nA @ 6V,

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Vishay Semiconductor Diodes Division

BZX384C2V7-E3-18

bahagian bahagian: 135437

Voltan - Zener (Nom) (Vz): 2.7V, Toleransi: ±5%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 100 Ohms, Semasa - Kebocoran Terbalik @ Vr: 20µA @ 1V,

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Vishay Semiconductor Diodes Division

BZT52C15-G3-08

bahagian bahagian: 113068

Voltan - Zener (Nom) (Vz): 15V, Toleransi: ±5%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 11 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 11V,

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Vishay Semiconductor Diodes Division

BZT52B56-G3-08

bahagian bahagian: 155574

Voltan - Zener (Nom) (Vz): 56V, Toleransi: ±2%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 135 Ohms,

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Vishay Semiconductor Diodes Division

BZT52B3V9-E3-08

bahagian bahagian: 110853

Voltan - Zener (Nom) (Vz): 3.9V, Toleransi: ±2%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 80 Ohms,

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Vishay Semiconductor Diodes Division

BZT52B6V2-E3-18

bahagian bahagian: 149255

Voltan - Zener (Nom) (Vz): 6.2V, Toleransi: ±2%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 4.8 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 2V,

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Vishay Semiconductor Diodes Division

BZT52C8V2-G3-08

bahagian bahagian: 131329

Voltan - Zener (Nom) (Vz): 8.2V, Toleransi: ±5%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 4.5 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 6V,

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Vishay Semiconductor Diodes Division

BZX384B10-HE3-18

bahagian bahagian: 148001

Voltan - Zener (Nom) (Vz): 10V, Toleransi: ±2%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 20 Ohms, Semasa - Kebocoran Terbalik @ Vr: 200nA @ 7V,

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Vishay Semiconductor Diodes Division

BZT52C36-HE3-08

bahagian bahagian: 157398

Voltan - Zener (Nom) (Vz): 36V, Toleransi: ±5%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 40 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 27V,

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Vishay Semiconductor Diodes Division

BZT52C5V6-E3-18

bahagian bahagian: 191008

Voltan - Zener (Nom) (Vz): 5.6V, Toleransi: ±5%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 10 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 1V,

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Vishay Semiconductor Diodes Division

BZX384C75-HE3-18

bahagian bahagian: 116628

Voltan - Zener (Nom) (Vz): 75V, Toleransi: ±5%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 255 Ohms, Semasa - Kebocoran Terbalik @ Vr: 50nA @ 52.5V,

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Vishay Semiconductor Diodes Division

BZX384C33-E3-18

bahagian bahagian: 105810

Voltan - Zener (Nom) (Vz): 33V, Toleransi: ±5%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 80 Ohms, Semasa - Kebocoran Terbalik @ Vr: 50nA @ 23.1V,

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Vishay Semiconductor Diodes Division

BZT52C6V8-G3-18

bahagian bahagian: 127354

Voltan - Zener (Nom) (Vz): 6.8V, Toleransi: ±5%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 4.5 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 3V,

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Vishay Semiconductor Diodes Division

BZX384C4V7-G3-18

bahagian bahagian: 175127

Voltan - Zener (Nom) (Vz): 4.7V, Toleransi: ±5%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 80 Ohms, Semasa - Kebocoran Terbalik @ Vr: 3µA @ 2V,

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Vishay Semiconductor Diodes Division

BZT52C5V1-E3-18

bahagian bahagian: 145940

Voltan - Zener (Nom) (Vz): 5.1V, Toleransi: ±5%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 30 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 800mV,

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Vishay Semiconductor Diodes Division

BZX384C16-G3-18

bahagian bahagian: 183928

Voltan - Zener (Nom) (Vz): 16V, Toleransi: ±5%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 40 Ohms, Semasa - Kebocoran Terbalik @ Vr: 50nA @ 11.2V,

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Vishay Semiconductor Diodes Division

BZT52C4V7-E3-18

bahagian bahagian: 144612

Voltan - Zener (Nom) (Vz): 4.7V, Toleransi: ±5%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 70 Ohms,

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Vishay Semiconductor Diodes Division

BZX384C68-E3-08

bahagian bahagian: 144151

Voltan - Zener (Nom) (Vz): 68V, Toleransi: ±5%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 240 Ohms, Semasa - Kebocoran Terbalik @ Vr: 50nA @ 47.6V,

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Vishay Semiconductor Diodes Division

BZT52B75-G3-18

bahagian bahagian: 135152

Voltan - Zener (Nom) (Vz): 75V, Toleransi: ±2%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 250 Ohms,

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Vishay Semiconductor Diodes Division

BZX384B3V0-G3-18

bahagian bahagian: 158477

Voltan - Zener (Nom) (Vz): 3V, Toleransi: ±2%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 95 Ohms, Semasa - Kebocoran Terbalik @ Vr: 10µA @ 1V,

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Vishay Semiconductor Diodes Division

BZX384B39-HE3-18

bahagian bahagian: 136412

Voltan - Zener (Nom) (Vz): 39V, Toleransi: ±2%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 130 Ohms, Semasa - Kebocoran Terbalik @ Vr: 50nA @ 27.3V,

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Vishay Semiconductor Diodes Division

BZT52C27-HE3-18

bahagian bahagian: 125607

Voltan - Zener (Nom) (Vz): 27V, Toleransi: ±5%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 30 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 20V,

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Vishay Semiconductor Diodes Division

BZX384C5V1-HE3-18

bahagian bahagian: 177202

Voltan - Zener (Nom) (Vz): 5.1V, Toleransi: ±5%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 60 Ohms, Semasa - Kebocoran Terbalik @ Vr: 2µA @ 2V,

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Vishay Semiconductor Diodes Division

BZX384B13-G3-18

bahagian bahagian: 118571

Voltan - Zener (Nom) (Vz): 13V, Toleransi: ±2%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 30 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 8V,

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Vishay Semiconductor Diodes Division

BZX384B39-HE3-08

bahagian bahagian: 169589

Voltan - Zener (Nom) (Vz): 39V, Toleransi: ±2%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 130 Ohms, Semasa - Kebocoran Terbalik @ Vr: 50nA @ 27.3V,

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Vishay Semiconductor Diodes Division

BZT52B4V7-HE3-18

bahagian bahagian: 104032

Voltan - Zener (Nom) (Vz): 4.7V, Toleransi: ±2%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 70 Ohms,

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Vishay Semiconductor Diodes Division

BZT52B15-HE3-08

bahagian bahagian: 198117

Voltan - Zener (Nom) (Vz): 15V, Toleransi: ±2%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 11 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 11V,

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Vishay Semiconductor Diodes Division

BZX384C13-E3-08

bahagian bahagian: 150441

Voltan - Zener (Nom) (Vz): 13V, Toleransi: ±5%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 30 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 8V,

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Vishay Semiconductor Diodes Division

BZT52C43-HE3-18

bahagian bahagian: 107119

Voltan - Zener (Nom) (Vz): 43V, Toleransi: ±5%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 60 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 32V,

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