Diod - Zener - Bujang | Produk Semikonduktor Diskrit | 100

BZT52C5V1-G3-18

bahagian bahagian: 116254

Voltan - Zener (Nom) (Vz): 5.1V, Toleransi: ±5%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 30 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 800mV,

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Vishay Semiconductor Diodes Division

BZT52C10-G3-18

bahagian bahagian: 160157

Voltan - Zener (Nom) (Vz): 10V, Toleransi: ±5%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 5.2 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 7.5V,

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Vishay Semiconductor Diodes Division

BZT52C7V5-G3-18

bahagian bahagian: 101463

Voltan - Zener (Nom) (Vz): 7.5V, Toleransi: ±5%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 4 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 5V,

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Vishay Semiconductor Diodes Division

BZT52C22-HE3-08

bahagian bahagian: 132453

Voltan - Zener (Nom) (Vz): 22V, Toleransi: ±5%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 25 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 17V,

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Vishay Semiconductor Diodes Division

BZX384C56-HE3-18

bahagian bahagian: 149371

Voltan - Zener (Nom) (Vz): 56V, Toleransi: ±5%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 200 Ohms, Semasa - Kebocoran Terbalik @ Vr: 50nA @ 39.2V,

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Vishay Semiconductor Diodes Division

BZT52C51-E3-18

bahagian bahagian: 113368

Voltan - Zener (Nom) (Vz): 51V, Toleransi: ±5%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 70 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 38V,

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Vishay Semiconductor Diodes Division

BZT52C2V7-HE3-08

bahagian bahagian: 100977

Voltan - Zener (Nom) (Vz): 2.7V, Toleransi: ±5%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 75 Ohms,

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Vishay Semiconductor Diodes Division

BZX384B7V5-E3-18

bahagian bahagian: 170389

Voltan - Zener (Nom) (Vz): 7.5V, Toleransi: ±2%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 15 Ohms, Semasa - Kebocoran Terbalik @ Vr: 1µA @ 1V,

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Vishay Semiconductor Diodes Division

BZX384B3V6-HE3-08

bahagian bahagian: 167907

Voltan - Zener (Nom) (Vz): 3.6V, Toleransi: ±2%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 90 Ohms, Semasa - Kebocoran Terbalik @ Vr: 5µA @ 1V,

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Vishay Semiconductor Diodes Division

BZX384C2V4-G3-18

bahagian bahagian: 192033

Voltan - Zener (Nom) (Vz): 2.4V, Toleransi: ±5%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 100 Ohms, Semasa - Kebocoran Terbalik @ Vr: 50µA @ 1V,

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Vishay Semiconductor Diodes Division

BZX384C62-E3-08

bahagian bahagian: 103660

Voltan - Zener (Nom) (Vz): 62V, Toleransi: ±5%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 215 Ohms, Semasa - Kebocoran Terbalik @ Vr: 50nA @ 43.4V,

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Vishay Semiconductor Diodes Division

BZT52B43-E3-18

bahagian bahagian: 127569

Voltan - Zener (Nom) (Vz): 43V, Toleransi: ±2%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 60 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 32V,

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Vishay Semiconductor Diodes Division

BZT52B11-G3-08

bahagian bahagian: 172743

Voltan - Zener (Nom) (Vz): 11V, Toleransi: ±2%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 6 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 8.5V,

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Vishay Semiconductor Diodes Division

BZT52C11-HE3-08

bahagian bahagian: 163366

Voltan - Zener (Nom) (Vz): 11V, Toleransi: ±5%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 6 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 8.5V,

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Vishay Semiconductor Diodes Division

BZX384C75-G3-18

bahagian bahagian: 117073

Voltan - Zener (Nom) (Vz): 75V, Toleransi: ±5%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 255 Ohms, Semasa - Kebocoran Terbalik @ Vr: 50nA @ 52.5V,

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Vishay Semiconductor Diodes Division

BZX384C43-G3-18

bahagian bahagian: 192027

Voltan - Zener (Nom) (Vz): 43V, Toleransi: ±5%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 150 Ohms, Semasa - Kebocoran Terbalik @ Vr: 50nA @ 30.1V,

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Vishay Semiconductor Diodes Division

BZX384B30-G3-08

bahagian bahagian: 154396

Voltan - Zener (Nom) (Vz): 30V, Toleransi: ±2%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 80 Ohms, Semasa - Kebocoran Terbalik @ Vr: 50nA @ 21V,

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Vishay Semiconductor Diodes Division

BZT52B75-HE3-08

bahagian bahagian: 180858

Voltan - Zener (Nom) (Vz): 75V, Toleransi: ±2%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 250 Ohms,

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Vishay Semiconductor Diodes Division

BZX384C3V3-E3-08

bahagian bahagian: 167219

Voltan - Zener (Nom) (Vz): 3.3V, Toleransi: ±5%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 95 Ohms, Semasa - Kebocoran Terbalik @ Vr: 5µA @ 1V,

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Vishay Semiconductor Diodes Division

BZX384B8V2-HE3-18

bahagian bahagian: 193429

Voltan - Zener (Nom) (Vz): 8.2V, Toleransi: ±2%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 15 Ohms, Semasa - Kebocoran Terbalik @ Vr: 700nA @ 5V,

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Vishay Semiconductor Diodes Division

BZX384C6V2-HE3-08

bahagian bahagian: 125197

Voltan - Zener (Nom) (Vz): 6.2V, Toleransi: ±5%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 10 Ohms, Semasa - Kebocoran Terbalik @ Vr: 3µA @ 4V,

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Vishay Semiconductor Diodes Division

BZX384C7V5-E3-18

bahagian bahagian: 187822

Voltan - Zener (Nom) (Vz): 7.5V, Toleransi: ±5%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 15 Ohms, Semasa - Kebocoran Terbalik @ Vr: 1µA @ 5V,

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Vishay Semiconductor Diodes Division

BZT52C8V2-HE3-08

bahagian bahagian: 158182

Voltan - Zener (Nom) (Vz): 8.2V, Toleransi: ±5%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 4.5 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 6V,

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Vishay Semiconductor Diodes Division

BZT52C7V5-HE3-08

bahagian bahagian: 149650

Voltan - Zener (Nom) (Vz): 7.5V, Toleransi: ±5%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 4 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 5V,

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Vishay Semiconductor Diodes Division

BZX384B39-G3-18

bahagian bahagian: 135845

Voltan - Zener (Nom) (Vz): 39V, Toleransi: ±2%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 130 Ohms, Semasa - Kebocoran Terbalik @ Vr: 50nA @ 27.3V,

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Vishay Semiconductor Diodes Division

BZT52C47-G3-08

bahagian bahagian: 120749

Voltan - Zener (Nom) (Vz): 47V, Toleransi: ±5%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 70 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 35V,

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Vishay Semiconductor Diodes Division

BZX384B33-HE3-08

bahagian bahagian: 104509

Voltan - Zener (Nom) (Vz): 33V, Toleransi: ±2%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 80 Ohms, Semasa - Kebocoran Terbalik @ Vr: 50nA @ 23.1V,

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Vishay Semiconductor Diodes Division

BZT52C2V7-G3-18

bahagian bahagian: 113705

Voltan - Zener (Nom) (Vz): 2.7V, Toleransi: ±5%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 75 Ohms,

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Vishay Semiconductor Diodes Division

BZX384B18-HE3-18

bahagian bahagian: 134516

Voltan - Zener (Nom) (Vz): 18V, Toleransi: ±2%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 45 Ohms, Semasa - Kebocoran Terbalik @ Vr: 50nA @ 12.6V,

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Vishay Semiconductor Diodes Division

BZT52C7V5-G3-08

bahagian bahagian: 139858

Voltan - Zener (Nom) (Vz): 7.5V, Toleransi: ±5%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 4 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 5V,

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Vishay Semiconductor Diodes Division

BZX384C4V3-E3-18

bahagian bahagian: 107077

Voltan - Zener (Nom) (Vz): 4.3V, Toleransi: ±5%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 90 Ohms, Semasa - Kebocoran Terbalik @ Vr: 3µA @ 1V,

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Vishay Semiconductor Diodes Division

BZT52C68-E3-08

bahagian bahagian: 118701

Voltan - Zener (Nom) (Vz): 68V, Toleransi: ±5%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 200 Ohms,

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Vishay Semiconductor Diodes Division

BZT52B56-E3-18

bahagian bahagian: 155265

Voltan - Zener (Nom) (Vz): 56V, Toleransi: ±2%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 135 Ohms,

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Vishay Semiconductor Diodes Division

BZX384C6V2-E3-18

bahagian bahagian: 133123

Voltan - Zener (Nom) (Vz): 6.2V, Toleransi: ±5%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 10 Ohms, Semasa - Kebocoran Terbalik @ Vr: 3µA @ 4V,

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Vishay Semiconductor Diodes Division

BZX384B3V0-E3-18

bahagian bahagian: 180900

Voltan - Zener (Nom) (Vz): 3V, Toleransi: ±2%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 95 Ohms, Semasa - Kebocoran Terbalik @ Vr: 10µA @ 1V,

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Vishay Semiconductor Diodes Division

BZT52B5V6-E3-18

bahagian bahagian: 125417

Voltan - Zener (Nom) (Vz): 5.6V, Toleransi: ±2%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 10 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 1V,

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