Diod - Zener - Bujang | Produk Semikonduktor Diskrit | 100

BZT52C6V2-E3-08

bahagian bahagian: 149893

Voltan - Zener (Nom) (Vz): 6.2V, Toleransi: ±5%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 4.8 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 2V,

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Vishay Semiconductor Diodes Division

BZT52B7V5-G3-18

bahagian bahagian: 119183

Voltan - Zener (Nom) (Vz): 7.5V, Toleransi: ±2%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 4 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 5V,

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Vishay Semiconductor Diodes Division

BZX384C33-G3-08

bahagian bahagian: 188550

Voltan - Zener (Nom) (Vz): 33V, Toleransi: ±5%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 80 Ohms, Semasa - Kebocoran Terbalik @ Vr: 50nA @ 23.1V,

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Vishay Semiconductor Diodes Division

BZX384C27-HE3-08

bahagian bahagian: 141679

Voltan - Zener (Nom) (Vz): 27V, Toleransi: ±5%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 80 Ohms, Semasa - Kebocoran Terbalik @ Vr: 50nA @ 18.9V,

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Vishay Semiconductor Diodes Division

BZT52B3V0-G3-18

bahagian bahagian: 141319

Voltan - Zener (Nom) (Vz): 3V, Toleransi: ±2%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 80 Ohms,

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Vishay Semiconductor Diodes Division

BZX384B68-G3-08

bahagian bahagian: 177183

Voltan - Zener (Nom) (Vz): 68V, Toleransi: ±2%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 240 Ohms, Semasa - Kebocoran Terbalik @ Vr: 50nA @ 47.6V,

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Vishay Semiconductor Diodes Division

BZX384B10-G3-18

bahagian bahagian: 134250

Voltan - Zener (Nom) (Vz): 10V, Toleransi: ±2%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 20 Ohms, Semasa - Kebocoran Terbalik @ Vr: 200nA @ 7V,

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Vishay Semiconductor Diodes Division

BZX384B11-G3-18

bahagian bahagian: 181108

Voltan - Zener (Nom) (Vz): 11V, Toleransi: ±2%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 20 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 8V,

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Vishay Semiconductor Diodes Division

BZT52B4V7-E3-18

bahagian bahagian: 142706

Voltan - Zener (Nom) (Vz): 4.7V, Toleransi: ±2%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 70 Ohms,

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Vishay Semiconductor Diodes Division

BZT52B13-E3-18

bahagian bahagian: 141041

Voltan - Zener (Nom) (Vz): 13V, Toleransi: ±2%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 9 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 10V,

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Vishay Semiconductor Diodes Division

BZT52B12-G3-08

bahagian bahagian: 184417

Voltan - Zener (Nom) (Vz): 12V, Toleransi: ±2%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 7 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 9V,

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Vishay Semiconductor Diodes Division

BZX384B9V1-E3-18

bahagian bahagian: 117051

Voltan - Zener (Nom) (Vz): 9.1V, Toleransi: ±2%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 15 Ohms, Semasa - Kebocoran Terbalik @ Vr: 500nA @ 6V,

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Vishay Semiconductor Diodes Division

BZT52B4V3-HE3-18

bahagian bahagian: 152264

Voltan - Zener (Nom) (Vz): 4.3V, Toleransi: ±2%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 80 Ohms,

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Vishay Semiconductor Diodes Division

BZT52B4V3-G3-18

bahagian bahagian: 101747

Voltan - Zener (Nom) (Vz): 4.3V, Toleransi: ±2%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 80 Ohms,

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Vishay Semiconductor Diodes Division

BZX384C3V0-E3-08

bahagian bahagian: 104216

Voltan - Zener (Nom) (Vz): 3V, Toleransi: ±5%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 95 Ohms, Semasa - Kebocoran Terbalik @ Vr: 10µA @ 1V,

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Vishay Semiconductor Diodes Division

BZT52C30-E3-18

bahagian bahagian: 178613

Voltan - Zener (Nom) (Vz): 30V, Toleransi: ±5%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 35 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 22.5V,

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Vishay Semiconductor Diodes Division

BZX384B51-G3-18

bahagian bahagian: 162206

Voltan - Zener (Nom) (Vz): 51V, Toleransi: ±2%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 180 Ohms, Semasa - Kebocoran Terbalik @ Vr: 50nA @ 35.7V,

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Vishay Semiconductor Diodes Division

BZT52C68-G3-18

bahagian bahagian: 165009

Voltan - Zener (Nom) (Vz): 68V, Toleransi: ±5%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 200 Ohms,

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Vishay Semiconductor Diodes Division

BZT52C4V3-HE3-18

bahagian bahagian: 110401

Voltan - Zener (Nom) (Vz): 4.3V, Toleransi: ±5%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 80 Ohms,

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Vishay Semiconductor Diodes Division

BZX384B6V2-E3-08

bahagian bahagian: 185389

Voltan - Zener (Nom) (Vz): 6.2V, Toleransi: ±2%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 10 Ohms, Semasa - Kebocoran Terbalik @ Vr: 3µA @ 4V,

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Vishay Semiconductor Diodes Division

BZX384C75-E3-18

bahagian bahagian: 190671

Voltan - Zener (Nom) (Vz): 75V, Toleransi: ±5%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 255 Ohms, Semasa - Kebocoran Terbalik @ Vr: 50nA @ 52.5V,

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Vishay Semiconductor Diodes Division

BZX384B20-E3-08

bahagian bahagian: 160209

Voltan - Zener (Nom) (Vz): 20V, Toleransi: ±2%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 55 Ohms, Semasa - Kebocoran Terbalik @ Vr: 50nA @ 14V,

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Vishay Semiconductor Diodes Division

BZT52C13-E3-18

bahagian bahagian: 122704

Voltan - Zener (Nom) (Vz): 13V, Toleransi: ±5%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 9 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 10V,

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Vishay Semiconductor Diodes Division

BZX384C5V1-G3-08

bahagian bahagian: 198171

Voltan - Zener (Nom) (Vz): 5.1V, Toleransi: ±5%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 60 Ohms, Semasa - Kebocoran Terbalik @ Vr: 2µA @ 2V,

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Vishay Semiconductor Diodes Division

BZT52C4V7-HE3-18

bahagian bahagian: 152318

Voltan - Zener (Nom) (Vz): 4.7V, Toleransi: ±5%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 70 Ohms,

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Vishay Semiconductor Diodes Division

BZX384C11-G3-18

bahagian bahagian: 179446

Voltan - Zener (Nom) (Vz): 11V, Toleransi: ±5%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 20 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 8V,

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Vishay Semiconductor Diodes Division

BZT52B27-HE3-08

bahagian bahagian: 121325

Voltan - Zener (Nom) (Vz): 27V, Toleransi: ±2%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 30 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 20V,

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Vishay Semiconductor Diodes Division

BZT52B33-E3-08

bahagian bahagian: 139754

Voltan - Zener (Nom) (Vz): 33V, Toleransi: ±2%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 40 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 25V,

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Vishay Semiconductor Diodes Division

BZT52B30-HE3-08

bahagian bahagian: 110572

Voltan - Zener (Nom) (Vz): 30V, Toleransi: ±2%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 35 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 22.5V,

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Vishay Semiconductor Diodes Division

BZT52B3V0-HE3-18

bahagian bahagian: 192020

Voltan - Zener (Nom) (Vz): 3V, Toleransi: ±2%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 80 Ohms,

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Vishay Semiconductor Diodes Division

BZT52B16-HE3-18

bahagian bahagian: 187915

Voltan - Zener (Nom) (Vz): 16V, Toleransi: ±2%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 13 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 12V,

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Vishay Semiconductor Diodes Division

BZX384C3V0-HE3-18

bahagian bahagian: 171907

Voltan - Zener (Nom) (Vz): 3V, Toleransi: ±5%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 95 Ohms, Semasa - Kebocoran Terbalik @ Vr: 10µA @ 1V,

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Vishay Semiconductor Diodes Division

BZX384C27-HE3-18

bahagian bahagian: 160759

Voltan - Zener (Nom) (Vz): 27V, Toleransi: ±5%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 80 Ohms, Semasa - Kebocoran Terbalik @ Vr: 50nA @ 18.9V,

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Vishay Semiconductor Diodes Division

BZX384B10-HE3-08

bahagian bahagian: 105491

Voltan - Zener (Nom) (Vz): 10V, Toleransi: ±2%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 20 Ohms, Semasa - Kebocoran Terbalik @ Vr: 200nA @ 7V,

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Vishay Semiconductor Diodes Division

BZT52B39-HE3-18

bahagian bahagian: 188574

Voltan - Zener (Nom) (Vz): 39V, Toleransi: ±2%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 50 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 29V,

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Vishay Semiconductor Diodes Division

BZX384B24-E3-08

bahagian bahagian: 112008

Voltan - Zener (Nom) (Vz): 24V, Toleransi: ±2%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 70 Ohms, Semasa - Kebocoran Terbalik @ Vr: 50nA @ 16.8V,

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