Diod - Zener - Bujang | Produk Semikonduktor Diskrit | 100

BZT52C33-G3-18

bahagian bahagian: 102227

Voltan - Zener (Nom) (Vz): 33V, Toleransi: ±5%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 40 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 25V,

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Vishay Semiconductor Diodes Division

BZT52C4V3-G3-18

bahagian bahagian: 158809

Voltan - Zener (Nom) (Vz): 4.3V, Toleransi: ±5%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 80 Ohms,

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Vishay Semiconductor Diodes Division

BZT52B68-G3-08

bahagian bahagian: 159927

Voltan - Zener (Nom) (Vz): 68V, Toleransi: ±2%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 200 Ohms,

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Vishay Semiconductor Diodes Division

BZT52B33-HE3-18

bahagian bahagian: 104311

Voltan - Zener (Nom) (Vz): 33V, Toleransi: ±2%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 40 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 25V,

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Vishay Semiconductor Diodes Division

BZT52B51-G3-08

bahagian bahagian: 165406

Voltan - Zener (Nom) (Vz): 51V, Toleransi: ±2%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 70 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 38V,

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Vishay Semiconductor Diodes Division

BZT52B3V9-G3-08

bahagian bahagian: 113484

Voltan - Zener (Nom) (Vz): 3.9V, Toleransi: ±2%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 80 Ohms,

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Vishay Semiconductor Diodes Division

BZT52B6V8-G3-18

bahagian bahagian: 103958

Voltan - Zener (Nom) (Vz): 6.8V, Toleransi: ±2%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 4.5 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 3V,

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Vishay Semiconductor Diodes Division

BZT52C51-G3-18

bahagian bahagian: 147565

Voltan - Zener (Nom) (Vz): 51V, Toleransi: ±5%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 70 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 38V,

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Vishay Semiconductor Diodes Division

BZT52C27-G3-18

bahagian bahagian: 154421

Voltan - Zener (Nom) (Vz): 27V, Toleransi: ±5%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 30 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 20V,

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Vishay Semiconductor Diodes Division

BZT52B5V1-HE3-18

bahagian bahagian: 164267

Voltan - Zener (Nom) (Vz): 5.1V, Toleransi: ±2%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 30 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 800mV,

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Vishay Semiconductor Diodes Division

BZT52C3V0-G3-08

bahagian bahagian: 154913

Voltan - Zener (Nom) (Vz): 3V, Toleransi: ±5%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 80 Ohms,

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Vishay Semiconductor Diodes Division

BZT52C18-HE3-18

bahagian bahagian: 101695

Voltan - Zener (Nom) (Vz): 18V, Toleransi: ±5%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 18 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 14V,

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Vishay Semiconductor Diodes Division

BZX384B3V3-G3-08

bahagian bahagian: 196946

Voltan - Zener (Nom) (Vz): 3.3V, Toleransi: ±2%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 95 Ohms, Semasa - Kebocoran Terbalik @ Vr: 5µA @ 1V,

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Vishay Semiconductor Diodes Division

BZT52C30-G3-08

bahagian bahagian: 141572

Voltan - Zener (Nom) (Vz): 30V, Toleransi: ±5%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 35 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 22.5V,

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Vishay Semiconductor Diodes Division

BZT52B12-HE3-18

bahagian bahagian: 152837

Voltan - Zener (Nom) (Vz): 12V, Toleransi: ±2%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 7 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 9V,

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Vishay Semiconductor Diodes Division

BZT52B9V1-G3-18

bahagian bahagian: 135824

Voltan - Zener (Nom) (Vz): 9.1V, Toleransi: ±2%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 4.8 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 7V,

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Vishay Semiconductor Diodes Division

BZX384B36-E3-08

bahagian bahagian: 134903

Voltan - Zener (Nom) (Vz): 36V, Toleransi: ±2%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 90 Ohms, Semasa - Kebocoran Terbalik @ Vr: 50nA @ 25.2V,

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Vishay Semiconductor Diodes Division

BZX384C4V3-G3-18

bahagian bahagian: 191383

Voltan - Zener (Nom) (Vz): 4.3V, Toleransi: ±5%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 90 Ohms, Semasa - Kebocoran Terbalik @ Vr: 3µA @ 1V,

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Vishay Semiconductor Diodes Division

BZX384B56-G3-08

bahagian bahagian: 178647

Voltan - Zener (Nom) (Vz): 56V, Toleransi: ±2%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 200 Ohms, Semasa - Kebocoran Terbalik @ Vr: 50nA @ 39.2V,

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Vishay Semiconductor Diodes Division

BZX384B4V3-HE3-08

bahagian bahagian: 122738

Voltan - Zener (Nom) (Vz): 4.3V, Toleransi: ±2%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 90 Ohms, Semasa - Kebocoran Terbalik @ Vr: 3µA @ 1V,

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Vishay Semiconductor Diodes Division

BZT52C11-G3-08

bahagian bahagian: 158606

Voltan - Zener (Nom) (Vz): 11V, Toleransi: ±5%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 6 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 8.5V,

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Vishay Semiconductor Diodes Division

BZT52B56-HE3-18

bahagian bahagian: 170762

Voltan - Zener (Nom) (Vz): 56V, Toleransi: ±2%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 135 Ohms,

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Vishay Semiconductor Diodes Division

BZT52B15-E3-18

bahagian bahagian: 107958

Voltan - Zener (Nom) (Vz): 15V, Toleransi: ±2%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 11 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 11V,

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Vishay Semiconductor Diodes Division

BZT52B3V3-HE3-18

bahagian bahagian: 138085

Voltan - Zener (Nom) (Vz): 3.3V, Toleransi: ±2%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 80 Ohms,

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Vishay Semiconductor Diodes Division

BZT52B18-G3-18

bahagian bahagian: 127582

Voltan - Zener (Nom) (Vz): 18V, Toleransi: ±2%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 18 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 14V,

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Vishay Semiconductor Diodes Division

BZT52B62-G3-08

bahagian bahagian: 175356

Voltan - Zener (Nom) (Vz): 62V, Toleransi: ±2%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 150 Ohms,

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Vishay Semiconductor Diodes Division

BZX384B7V5-HE3-18

bahagian bahagian: 115138

Voltan - Zener (Nom) (Vz): 7.5V, Toleransi: ±2%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 15 Ohms, Semasa - Kebocoran Terbalik @ Vr: 1µA @ 1V,

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Vishay Semiconductor Diodes Division

BZX384C75-HE3-08

bahagian bahagian: 146694

Voltan - Zener (Nom) (Vz): 75V, Toleransi: ±5%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 255 Ohms, Semasa - Kebocoran Terbalik @ Vr: 50nA @ 52.5V,

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Vishay Semiconductor Diodes Division

BZT52C2V7-E3-18

bahagian bahagian: 138088

Voltan - Zener (Nom) (Vz): 2.7V, Toleransi: ±5%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 75 Ohms,

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Vishay Semiconductor Diodes Division

BZX384B5V6-G3-08

bahagian bahagian: 144453

Voltan - Zener (Nom) (Vz): 5.6V, Toleransi: ±2%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 40 Ohms, Semasa - Kebocoran Terbalik @ Vr: 1µA @ 2V,

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Vishay Semiconductor Diodes Division

BZX384C20-HE3-08

bahagian bahagian: 110151

Voltan - Zener (Nom) (Vz): 20V, Toleransi: ±5%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 55 Ohms, Semasa - Kebocoran Terbalik @ Vr: 50nA @ 14V,

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Vishay Semiconductor Diodes Division

BZX384B75-G3-08

bahagian bahagian: 178444

Voltan - Zener (Nom) (Vz): 75V, Toleransi: ±2%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 255 Ohms, Semasa - Kebocoran Terbalik @ Vr: 50nA @ 52.5V,

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Vishay Semiconductor Diodes Division

BZT52B4V7-HE3-08

bahagian bahagian: 164340

Voltan - Zener (Nom) (Vz): 4.7V, Toleransi: ±2%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 70 Ohms,

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Vishay Semiconductor Diodes Division

BZX384B30-HE3-18

bahagian bahagian: 121301

Voltan - Zener (Nom) (Vz): 30V, Toleransi: ±2%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 80 Ohms, Semasa - Kebocoran Terbalik @ Vr: 50nA @ 21V,

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Vishay Semiconductor Diodes Division

BZT52B3V6-E3-08

bahagian bahagian: 198001

Voltan - Zener (Nom) (Vz): 3.6V, Toleransi: ±2%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 80 Ohms,

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Vishay Semiconductor Diodes Division

BZX384C43-E3-18

bahagian bahagian: 178295

Voltan - Zener (Nom) (Vz): 43V, Toleransi: ±5%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 150 Ohms, Semasa - Kebocoran Terbalik @ Vr: 50nA @ 30.1V,

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