Diod - Zener - Bujang | Produk Semikonduktor Diskrit | 100

BZT52B33-E3-18

bahagian bahagian: 112403

Voltan - Zener (Nom) (Vz): 33V, Toleransi: ±2%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 40 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 25V,

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Vishay Semiconductor Diodes Division

BZT52C75-G3-18

bahagian bahagian: 114326

Voltan - Zener (Nom) (Vz): 75V, Toleransi: ±5%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 250 Ohms,

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Vishay Semiconductor Diodes Division

BZX384C11-HE3-08

bahagian bahagian: 141884

Voltan - Zener (Nom) (Vz): 11V, Toleransi: ±5%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 20 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 8V,

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Vishay Semiconductor Diodes Division

BZT52C2V7-G3-08

bahagian bahagian: 161436

Voltan - Zener (Nom) (Vz): 2.7V, Toleransi: ±5%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 75 Ohms,

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Vishay Semiconductor Diodes Division

BZT52C51-G3-08

bahagian bahagian: 153043

Voltan - Zener (Nom) (Vz): 51V, Toleransi: ±5%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 70 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 38V,

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Vishay Semiconductor Diodes Division

BZX384C3V0-HE3-08

bahagian bahagian: 139392

Voltan - Zener (Nom) (Vz): 3V, Toleransi: ±5%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 95 Ohms, Semasa - Kebocoran Terbalik @ Vr: 10µA @ 1V,

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Vishay Semiconductor Diodes Division

BZT52C68-HE3-08

bahagian bahagian: 145155

Voltan - Zener (Nom) (Vz): 68V, Toleransi: ±5%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 200 Ohms,

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Vishay Semiconductor Diodes Division

BZX384C3V6-HE3-18

bahagian bahagian: 134132

Voltan - Zener (Nom) (Vz): 3.6V, Toleransi: ±5%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 90 Ohms, Semasa - Kebocoran Terbalik @ Vr: 5µA @ 1V,

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Vishay Semiconductor Diodes Division

BZX384B36-G3-08

bahagian bahagian: 189742

Voltan - Zener (Nom) (Vz): 36V, Toleransi: ±2%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 90 Ohms, Semasa - Kebocoran Terbalik @ Vr: 50nA @ 25.2V,

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Vishay Semiconductor Diodes Division

BZX384B27-G3-18

bahagian bahagian: 113461

Voltan - Zener (Nom) (Vz): 27V, Toleransi: ±2%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 80 Ohms, Semasa - Kebocoran Terbalik @ Vr: 50nA @ 18.9V,

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Vishay Semiconductor Diodes Division

BZT52B12-E3-08

bahagian bahagian: 116449

Voltan - Zener (Nom) (Vz): 12V, Toleransi: ±2%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 7 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 9V,

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Vishay Semiconductor Diodes Division

BZX384B4V7-E3-18

bahagian bahagian: 133954

Voltan - Zener (Nom) (Vz): 4.7V, Toleransi: ±2%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 80 Ohms, Semasa - Kebocoran Terbalik @ Vr: 3µA @ 2V,

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Vishay Semiconductor Diodes Division

BZT52B10-E3-08

bahagian bahagian: 168953

Voltan - Zener (Nom) (Vz): 10V, Toleransi: ±2%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 5.2 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 7.5V,

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Vishay Semiconductor Diodes Division

BZT52B68-HE3-18

bahagian bahagian: 114056

Voltan - Zener (Nom) (Vz): 68V, Toleransi: ±2%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 200 Ohms,

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Vishay Semiconductor Diodes Division

BZX384B56-E3-18

bahagian bahagian: 194792

Voltan - Zener (Nom) (Vz): 56V, Toleransi: ±2%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 200 Ohms, Semasa - Kebocoran Terbalik @ Vr: 50nA @ 39.2V,

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Vishay Semiconductor Diodes Division

BZX384C62-E3-18

bahagian bahagian: 198867

Voltan - Zener (Nom) (Vz): 62V, Toleransi: ±5%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 215 Ohms, Semasa - Kebocoran Terbalik @ Vr: 50nA @ 43.4V,

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Vishay Semiconductor Diodes Division

BZT52C20-HE3-08

bahagian bahagian: 173042

Voltan - Zener (Nom) (Vz): 20V, Toleransi: ±5%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 20 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 15V,

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Vishay Semiconductor Diodes Division

BZT52C20-G3-18

bahagian bahagian: 138079

Voltan - Zener (Nom) (Vz): 20V, Toleransi: ±5%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 20 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 15V,

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Vishay Semiconductor Diodes Division

BZT52B39-G3-18

bahagian bahagian: 199284

Voltan - Zener (Nom) (Vz): 39V, Toleransi: ±2%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 50 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 29V,

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Vishay Semiconductor Diodes Division

BZX384B62-E3-08

bahagian bahagian: 196067

Voltan - Zener (Nom) (Vz): 62V, Toleransi: ±2%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 215 Ohms, Semasa - Kebocoran Terbalik @ Vr: 50nA @ 43.4V,

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Vishay Semiconductor Diodes Division

BZT52C4V3-E3-18

bahagian bahagian: 189090

Voltan - Zener (Nom) (Vz): 4.3V, Toleransi: ±5%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 80 Ohms,

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Vishay Semiconductor Diodes Division

BZX384B47-HE3-08

bahagian bahagian: 166920

Voltan - Zener (Nom) (Vz): 47V, Toleransi: ±2%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 170 Ohms, Semasa - Kebocoran Terbalik @ Vr: 50nA @ 32.9V,

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Vishay Semiconductor Diodes Division

BZX384C7V5-G3-18

bahagian bahagian: 117378

Voltan - Zener (Nom) (Vz): 7.5V, Toleransi: ±5%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 15 Ohms, Semasa - Kebocoran Terbalik @ Vr: 1µA @ 5V,

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Vishay Semiconductor Diodes Division

BZX384B11-E3-18

bahagian bahagian: 126679

Voltan - Zener (Nom) (Vz): 11V, Toleransi: ±2%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 20 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 8V,

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Vishay Semiconductor Diodes Division

BZX384B68-HE3-08

bahagian bahagian: 145570

Voltan - Zener (Nom) (Vz): 68V, Toleransi: ±2%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 240 Ohms, Semasa - Kebocoran Terbalik @ Vr: 50nA @ 47.6V,

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Vishay Semiconductor Diodes Division

BZT52B20-HE3-08

bahagian bahagian: 192290

Voltan - Zener (Nom) (Vz): 20V, Toleransi: ±2%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 20 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 15V,

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Vishay Semiconductor Diodes Division

BZT52B6V2-HE3-18

bahagian bahagian: 104324

Voltan - Zener (Nom) (Vz): 6.2V, Toleransi: ±2%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 4.8 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 2V,

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Vishay Semiconductor Diodes Division

BZT52C36-HE3-18

bahagian bahagian: 160244

Voltan - Zener (Nom) (Vz): 36V, Toleransi: ±5%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 40 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 27V,

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Vishay Semiconductor Diodes Division

BZX384B5V1-HE3-18

bahagian bahagian: 106808

Voltan - Zener (Nom) (Vz): 5.1V, Toleransi: ±2%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 60 Ohms, Semasa - Kebocoran Terbalik @ Vr: 2µA @ 2V,

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Vishay Semiconductor Diodes Division

BZT52B43-E3-08

bahagian bahagian: 165085

Voltan - Zener (Nom) (Vz): 43V, Toleransi: ±2%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 60 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 32V,

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Vishay Semiconductor Diodes Division

BZX384C3V9-G3-18

bahagian bahagian: 108470

Voltan - Zener (Nom) (Vz): 3.9V, Toleransi: ±5%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 90 Ohms, Semasa - Kebocoran Terbalik @ Vr: 5µA @ 1V,

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Vishay Semiconductor Diodes Division

BZT52C3V3-HE3-08

bahagian bahagian: 165374

Voltan - Zener (Nom) (Vz): 3.3V, Toleransi: ±5%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 80 Ohms,

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Vishay Semiconductor Diodes Division

BZT52B33-G3-08

bahagian bahagian: 106380

Voltan - Zener (Nom) (Vz): 33V, Toleransi: ±2%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 40 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 25V,

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Vishay Semiconductor Diodes Division

BZT52C5V1-HE3-18

bahagian bahagian: 155369

Voltan - Zener (Nom) (Vz): 5.1V, Toleransi: ±5%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 30 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 800mV,

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Vishay Semiconductor Diodes Division

BZT52C33-G3-08

bahagian bahagian: 146166

Voltan - Zener (Nom) (Vz): 33V, Toleransi: ±5%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 40 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 25V,

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Vishay Semiconductor Diodes Division

BZT52C3V6-E3-18

bahagian bahagian: 142405

Voltan - Zener (Nom) (Vz): 3.6V, Toleransi: ±5%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 80 Ohms,

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