Diod - Pembetulan - Bujang

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Diod - Pembetulan - Bujang

Vishay Semiconductor Diodes Division

BYG10YHE3_A/H

bahagian bahagian: 17865

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 1600V, Semasa - Rata-rata Disahkan (Io): 1.5A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.15V @ 1.5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 4µs,

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Vishay Semiconductor Diodes Division

BYG10J-E3/TR

bahagian bahagian: 149622

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 1.5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.15V @ 1.5A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 4µs,

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Vishay Semiconductor Diodes Division

BY252P-E3/54

bahagian bahagian: 145929

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io): 3A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 3A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 3µs,

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Vishay Semiconductor Diodes Division

BY253P-E3/54

bahagian bahagian: 127396

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 3A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 3A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 3µs,

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Vishay Semiconductor Diodes Division

BAV19W-E3-08

bahagian bahagian: 102442

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io): 250mA (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.25V @ 200mA, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 50ns,

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Vishay Semiconductor Diodes Division

BA159-E3/73

bahagian bahagian: 135265

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1000V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.3V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 500ns,

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BAS70-02V-V-G-08

Vishay Semiconductor Diodes Division

BAS70-02V-V-G-08

bahagian bahagian: 174638

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 70V, Semasa - Rata-rata Disahkan (Io): 100mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 15mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed, Masa Pemulihan Berbalik (trr): 5ns,

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Vishay Semiconductor Diodes Division

BAS19-E3-08

bahagian bahagian: 165592

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io): 200mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.25V @ 200mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed, Masa Pemulihan Berbalik (trr): 50ns,

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BYM11-400-E3/96

Vishay Semiconductor Diodes Division

BYM11-400-E3/96

bahagian bahagian: 154481

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.3V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 150ns,

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Vishay Semiconductor Diodes Division

BAS21-HE3-08

bahagian bahagian: 108310

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 200mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.25V @ 200mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed, Masa Pemulihan Berbalik (trr): 50ns,

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BYM10-800-E3/96

Vishay Semiconductor Diodes Division

BYM10-800-E3/96

bahagian bahagian: 191060

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 800V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 1A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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BYM10-600-E3/96

Vishay Semiconductor Diodes Division

BYM10-600-E3/96

bahagian bahagian: 119015

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 1A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

B360B-E3/5BT

bahagian bahagian: 164916

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 60V, Semasa - Rata-rata Disahkan (Io): 3A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 660mV @ 3A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

BYG24D-E3/TR

bahagian bahagian: 162130

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 1.5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.25V @ 1.5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 140ns,

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Vishay Semiconductor Diodes Division

B340A-M3/61T

bahagian bahagian: 143315

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 40V, Semasa - Rata-rata Disahkan (Io): 3A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 550mV @ 3A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

B120-E3/61T

bahagian bahagian: 144292

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 20V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 520mV @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

BYW82-TR

bahagian bahagian: 191605

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 3A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 3A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 7.5µs,

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Vishay Semiconductor Diodes Division

B160-E3/5AT

bahagian bahagian: 189351

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 60V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 750mV @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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BYS11-90-E3/TR3

Vishay Semiconductor Diodes Division

BYS11-90-E3/TR3

bahagian bahagian: 136594

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 90V, Semasa - Rata-rata Disahkan (Io): 1.5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 750mV @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

BYW178-TR

bahagian bahagian: 166134

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 800V, Semasa - Rata-rata Disahkan (Io): 3A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.9V @ 3A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 60ns,

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Vishay Semiconductor Diodes Division

BYG20D-E3/TR3

bahagian bahagian: 156933

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 1.5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.4V @ 1.5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 75ns,

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Vishay Semiconductor Diodes Division

BYT56M-TAP

bahagian bahagian: 190205

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 1000V, Semasa - Rata-rata Disahkan (Io): 3A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.4V @ 3A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 100ns,

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Vishay Semiconductor Diodes Division

B130-E3/5AT

bahagian bahagian: 180095

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 30V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 520mV @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

BYT56M-TR

bahagian bahagian: 181153

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 1000V, Semasa - Rata-rata Disahkan (Io): 3A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.4V @ 3A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 100ns,

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Vishay Semiconductor Diodes Division

BAQ134-GS08

bahagian bahagian: 114583

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 60V, Semasa - Rata-rata Disahkan (Io): 200mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 100mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed,

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Vishay Semiconductor Diodes Division

BYV28-600-TAP

bahagian bahagian: 141378

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 3.5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.35V @ 5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 210ns,

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Vishay Semiconductor Diodes Division

BYG21K-E3/TR3

bahagian bahagian: 119683

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 800V, Semasa - Rata-rata Disahkan (Io): 1.5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.6V @ 1.5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 120ns,

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Vishay Semiconductor Diodes Division

BYV28-200-TAP

bahagian bahagian: 146611

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 3.5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 30ns,

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Vishay Semiconductor Diodes Division

BYG10YHM3_A/I

bahagian bahagian: 20320

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 1600V, Semasa - Rata-rata Disahkan (Io): 1.5A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.15V @ 1.5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 4µs,

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Vishay Semiconductor Diodes Division

BAQ34-GS08

bahagian bahagian: 163973

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 60V, Semasa - Rata-rata Disahkan (Io): 200mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 100mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed,

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Vishay Semiconductor Diodes Division

BYG10YHE3_A/I

bahagian bahagian: 20300

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 1600V, Semasa - Rata-rata Disahkan (Io): 1.5A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.15V @ 1.5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 4µs,

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Vishay Semiconductor Diodes Division

BYW86-TR

bahagian bahagian: 177974

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 1000V, Semasa - Rata-rata Disahkan (Io): 3A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 3A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 7.5µs,

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Vishay Semiconductor Diodes Division

BY255P-E3/73

bahagian bahagian: 105347

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1300V, Semasa - Rata-rata Disahkan (Io): 3A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 3A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 3µs,

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Vishay Semiconductor Diodes Division

BAS40-00-E3-08

bahagian bahagian: 177694

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 40V, Semasa - Rata-rata Disahkan (Io): 200mA (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 40mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed, Masa Pemulihan Berbalik (trr): 5ns,

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Vishay Semiconductor Diodes Division

BAT43WS-E3-08

bahagian bahagian: 163088

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 30V, Semasa - Rata-rata Disahkan (Io): 200mA (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 450mV @ 15mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed, Masa Pemulihan Berbalik (trr): 5ns,

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Vishay Semiconductor Diodes Division

BAT43WS-HE3-08

bahagian bahagian: 187575

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 30V, Semasa - Rata-rata Disahkan (Io): 200mA (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 450mV @ 15mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed, Masa Pemulihan Berbalik (trr): 5ns,

Senarai harapan

3600

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