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Diod - Pembetulan - Bujang

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BYV26C-TR
Vishay Semiconductor Diodes Division

BYV26C-TR

bahagian bahagian: 143799

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 2.5V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 30ns,

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BAT42W-E3-08
Vishay Semiconductor Diodes Division

BAT42W-E3-08

bahagian bahagian: 163524

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 30V, Semasa - Rata-rata Disahkan (Io): 200mA (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 650mV @ 50mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed, Masa Pemulihan Berbalik (trr): 5ns,

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B360B-E3/52T
Vishay Semiconductor Diodes Division

B360B-E3/52T

bahagian bahagian: 102416

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 60V, Semasa - Rata-rata Disahkan (Io): 3A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 660mV @ 3A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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BA157-E3/54
Vishay Semiconductor Diodes Division

BA157-E3/54

bahagian bahagian: 114517

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.3V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 150ns,

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BYV26DGP-E3/73
Vishay Semiconductor Diodes Division

BYV26DGP-E3/73

bahagian bahagian: 159527

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 800V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 2.5V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 75ns,

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BA159-E3/54
Vishay Semiconductor Diodes Division

BA159-E3/54

bahagian bahagian: 154614

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1000V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.3V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 500ns,

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BYV27-100-TR
Vishay Semiconductor Diodes Division

BYV27-100-TR

bahagian bahagian: 191875

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io): 2A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.07V @ 3A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 25ns,

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BYM10-100-E3/97
Vishay Semiconductor Diodes Division

BYM10-100-E3/97

bahagian bahagian: 106924

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 1A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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BYV26A-TAP
Vishay Semiconductor Diodes Division

BYV26A-TAP

bahagian bahagian: 183151

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 2.5V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 30ns,

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BYV27-150-TR
Vishay Semiconductor Diodes Division

BYV27-150-TR

bahagian bahagian: 131464

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 165V, Semasa - Rata-rata Disahkan (Io): 2A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.07V @ 3A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 25ns,

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BYG22B-E3/TR
Vishay Semiconductor Diodes Division

BYG22B-E3/TR

bahagian bahagian: 105305

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io): 2A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 2A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 25ns,

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BAV202-GS08
Vishay Semiconductor Diodes Division

BAV202-GS08

bahagian bahagian: 193112

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 150V, Semasa - Rata-rata Disahkan (Io): 250mA (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 100mA, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 50ns,

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BAT81S-TR
Vishay Semiconductor Diodes Division

BAT81S-TR

bahagian bahagian: 123502

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 40V, Semasa - Rata-rata Disahkan (Io): 30mA (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 15mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed,

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BAW76-TR
Vishay Semiconductor Diodes Division

BAW76-TR

bahagian bahagian: 103779

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 50V, Semasa - Rata-rata Disahkan (Io): 300mA (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 100mA, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 4ns,

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BAT42-TR
Vishay Semiconductor Diodes Division

BAT42-TR

bahagian bahagian: 136977

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 30V, Semasa - Rata-rata Disahkan (Io): 200mA (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 650mV @ 50mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed, Masa Pemulihan Berbalik (trr): 5ns,

Senarai harapan
BYM10-400-E3/96
Vishay Semiconductor Diodes Division

BYM10-400-E3/96

bahagian bahagian: 161468

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 1A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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BAV20WS-E3-08
Vishay Semiconductor Diodes Division

BAV20WS-E3-08

bahagian bahagian: 178561

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 150V, Semasa - Rata-rata Disahkan (Io): 250mA (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.25V @ 200mA, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 50ns,

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BAT43W-E3-08
Vishay Semiconductor Diodes Division

BAT43W-E3-08

bahagian bahagian: 180896

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 30V, Semasa - Rata-rata Disahkan (Io): 200mA (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 450mV @ 15mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed, Masa Pemulihan Berbalik (trr): 5ns,

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BAV21WS-HE3-08
Vishay Semiconductor Diodes Division

BAV21WS-HE3-08

bahagian bahagian: 155591

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 250mA (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.25V @ 200mA, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 50ns,

Senarai harapan
B340A-E3/61T
Vishay Semiconductor Diodes Division

B340A-E3/61T

bahagian bahagian: 134345

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 40V, Semasa - Rata-rata Disahkan (Io): 3A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 550mV @ 3A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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BAS170WS-E3-08
Vishay Semiconductor Diodes Division

BAS170WS-E3-08

bahagian bahagian: 180654

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 70V, Semasa - Rata-rata Disahkan (Io): 70mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 15mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed,

Senarai harapan
BAT83S-TR
Vishay Semiconductor Diodes Division

BAT83S-TR

bahagian bahagian: 132524

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 60V, Semasa - Rata-rata Disahkan (Io): 30mA (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 15mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed,

Senarai harapan
BAV19-TR
Vishay Semiconductor Diodes Division

BAV19-TR

bahagian bahagian: 178480

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io): 250mA (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 100mA, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 50ns,

Senarai harapan
BAW75-TAP
Vishay Semiconductor Diodes Division

BAW75-TAP

bahagian bahagian: 106301

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 25V, Semasa - Rata-rata Disahkan (Io): 300mA (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 30mA, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 4ns,

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BAS34-TAP
Vishay Semiconductor Diodes Division

BAS34-TAP

bahagian bahagian: 172791

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 60V, Semasa - Rata-rata Disahkan (Io): 200mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 100mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed,

Senarai harapan
BYM13-60-E3/96
Vishay Semiconductor Diodes Division

BYM13-60-E3/96

bahagian bahagian: 177919

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 60V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 700mV @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

Senarai harapan
BYV26E-TAP
Vishay Semiconductor Diodes Division

BYV26E-TAP

bahagian bahagian: 148905

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 1000V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 2.5V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 75ns,

Senarai harapan
BYG21M-E3/TR3
Vishay Semiconductor Diodes Division

BYG21M-E3/TR3

bahagian bahagian: 196643

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 1000V, Semasa - Rata-rata Disahkan (Io): 1.5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.6V @ 1.5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 120ns,

Senarai harapan
BAW76-TAP
Vishay Semiconductor Diodes Division

BAW76-TAP

bahagian bahagian: 181821

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 50V, Semasa - Rata-rata Disahkan (Io): 300mA (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 100mA, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 4ns,

Senarai harapan
BAT85S-TAP
Vishay Semiconductor Diodes Division

BAT85S-TAP

bahagian bahagian: 152235

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 30V, Semasa - Rata-rata Disahkan (Io): 200mA (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 800mV @ 100mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed, Masa Pemulihan Berbalik (trr): 5ns,

Senarai harapan
BYG20J-E3/TR
Vishay Semiconductor Diodes Division

BYG20J-E3/TR

bahagian bahagian: 195021

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 1.5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.4V @ 1.5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 75ns,

Senarai harapan
BAS40-02V-V-G-08
Vishay Semiconductor Diodes Division

BAS40-02V-V-G-08

bahagian bahagian: 119547

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 40V, Semasa - Rata-rata Disahkan (Io): 120mA (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 380mV @ 1mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed, Masa Pemulihan Berbalik (trr): 5ns,

Senarai harapan
BYV29-400-E3/45
Vishay Semiconductor Diodes Division

BYV29-400-E3/45

bahagian bahagian: 147279

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io): 8A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.25V @ 8A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 50ns,

Senarai harapan
BAV20-TR
Vishay Semiconductor Diodes Division

BAV20-TR

bahagian bahagian: 122116

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 150V, Semasa - Rata-rata Disahkan (Io): 250mA (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 100mA, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 50ns,

Senarai harapan
BYWB29-100HE3/81
Vishay Semiconductor Diodes Division

BYWB29-100HE3/81

bahagian bahagian: 87408

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io): 8A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.3V @ 20A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 25ns,

Senarai harapan
BYWB29-200HE3/81
Vishay Semiconductor Diodes Division

BYWB29-200HE3/81

bahagian bahagian: 87472

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 8A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.3V @ 20A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 25ns,

Senarai harapan