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Diod - Pembetulan - Bujang

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BYG10D-E3/TR
Vishay Semiconductor Diodes Division

BYG10D-E3/TR

bahagian bahagian: 163646

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 1.5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.15V @ 1.5A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 4µs,

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BYS10-25-E3/TR
Vishay Semiconductor Diodes Division

BYS10-25-E3/TR

bahagian bahagian: 164701

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 25V, Semasa - Rata-rata Disahkan (Io): 1.5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 500mV @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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BYM12-200-E3/96
Vishay Semiconductor Diodes Division

BYM12-200-E3/96

bahagian bahagian: 120803

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 50ns,

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BYS10-45HE3_A/I
Vishay Semiconductor Diodes Division

BYS10-45HE3_A/I

bahagian bahagian: 32260

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 45V, Semasa - Rata-rata Disahkan (Io): 1.5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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BAV20WS-HE3-08
Vishay Semiconductor Diodes Division

BAV20WS-HE3-08

bahagian bahagian: 152834

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 150V, Semasa - Rata-rata Disahkan (Io): 250mA (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.25V @ 200mA, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 50ns,

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BAV20W-HE3-08
Vishay Semiconductor Diodes Division

BAV20W-HE3-08

bahagian bahagian: 179080

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 150V, Semasa - Rata-rata Disahkan (Io): 250mA (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.25V @ 200mA, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 50ns,

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BAS16D-HE3-08
Vishay Semiconductor Diodes Division

BAS16D-HE3-08

bahagian bahagian: 111335

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 75V, Semasa - Rata-rata Disahkan (Io): 250mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.25V @ 150mA, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 6ns,

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BYS10-45-E3/TR3
Vishay Semiconductor Diodes Division

BYS10-45-E3/TR3

bahagian bahagian: 106669

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 45V, Semasa - Rata-rata Disahkan (Io): 1.5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 500mV @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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BAV302-TR
Vishay Semiconductor Diodes Division

BAV302-TR

bahagian bahagian: 155089

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 150V, Semasa - Rata-rata Disahkan (Io): 250mA (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 100mA, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 50ns,

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BAQ333-TR
Vishay Semiconductor Diodes Division

BAQ333-TR

bahagian bahagian: 142318

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 40V, Semasa - Rata-rata Disahkan (Io): 200mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 100mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed,

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BAT54W-E3-08
Vishay Semiconductor Diodes Division

BAT54W-E3-08

bahagian bahagian: 170231

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 30V, Semasa - Rata-rata Disahkan (Io): 200mA (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 800mV @ 100mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed, Masa Pemulihan Berbalik (trr): 5ns,

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BAS170WS-HE3-08
Vishay Semiconductor Diodes Division

BAS170WS-HE3-08

bahagian bahagian: 136941

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 70V, Semasa - Rata-rata Disahkan (Io): 70mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 15mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed,

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BYS10-35HE3_A/H
Vishay Semiconductor Diodes Division

BYS10-35HE3_A/H

bahagian bahagian: 34922

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 35V, Semasa - Rata-rata Disahkan (Io): 1.5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 500mV @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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BYS10-45HE3_A/H
Vishay Semiconductor Diodes Division

BYS10-45HE3_A/H

bahagian bahagian: 34902

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 45V, Semasa - Rata-rata Disahkan (Io): 1.5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 500mV @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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BA158-E3/54
Vishay Semiconductor Diodes Division

BA158-E3/54

bahagian bahagian: 101393

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.3V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 250ns,

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B340LB-E3/52T
Vishay Semiconductor Diodes Division

B340LB-E3/52T

bahagian bahagian: 123083

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 40V, Semasa - Rata-rata Disahkan (Io): 3A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 450mV @ 3A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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BYG20D-E3/TR
Vishay Semiconductor Diodes Division

BYG20D-E3/TR

bahagian bahagian: 116833

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 1.5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.4V @ 1.5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 75ns,

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BYT62-TAP
Vishay Semiconductor Diodes Division

BYT62-TAP

bahagian bahagian: 158520

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 2400V, Semasa - Rata-rata Disahkan (Io): 350mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 3.6V @ 1A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 5µs,

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BYT54M-TAP
Vishay Semiconductor Diodes Division

BYT54M-TAP

bahagian bahagian: 193530

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 1000V, Semasa - Rata-rata Disahkan (Io): 1.25A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.5V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 100ns,

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BAV21-TR
Vishay Semiconductor Diodes Division

BAV21-TR

bahagian bahagian: 170950

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 250mA (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 100mA, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 50ns,

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BYT52M-TAP
Vishay Semiconductor Diodes Division

BYT52M-TAP

bahagian bahagian: 122124

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 1000V, Semasa - Rata-rata Disahkan (Io): 1.4A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.3V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 200ns,

Senarai harapan
BAW27-TAP
Vishay Semiconductor Diodes Division

BAW27-TAP

bahagian bahagian: 153002

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 60V, Semasa - Rata-rata Disahkan (Io): 600mA (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.25V @ 400mA, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 6ns,

Senarai harapan
BYW36-TR
Vishay Semiconductor Diodes Division

BYW36-TR

bahagian bahagian: 121947

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 2A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 200ns,

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BYV26D-TAP
Vishay Semiconductor Diodes Division

BYV26D-TAP

bahagian bahagian: 187035

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 800V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 2.5V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 75ns,

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BY269TAP
Vishay Semiconductor Diodes Division

BY269TAP

bahagian bahagian: 129989

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 1600V, Semasa - Rata-rata Disahkan (Io): 2A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.6V @ 3A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 2µs,

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BYV26C-TAP
Vishay Semiconductor Diodes Division

BYV26C-TAP

bahagian bahagian: 171441

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 2.5V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 30ns,

Senarai harapan
BYW32-TR
Vishay Semiconductor Diodes Division

BYW32-TR

bahagian bahagian: 152678

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 2A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 200ns,

Senarai harapan
BYV27-600-TAP
Vishay Semiconductor Diodes Division

BYV27-600-TAP

bahagian bahagian: 122331

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 2A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.35V @ 3A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 250ns,

Senarai harapan
BYW55-TAP
Vishay Semiconductor Diodes Division

BYW55-TAP

bahagian bahagian: 144972

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 800V, Semasa - Rata-rata Disahkan (Io): 2A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 1A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 4µs,

Senarai harapan
BYX86TAP
Vishay Semiconductor Diodes Division

BYX86TAP

bahagian bahagian: 183532

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 1000V, Semasa - Rata-rata Disahkan (Io): 2A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 1A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 4µs,

Senarai harapan
BAW27-TR
Vishay Semiconductor Diodes Division

BAW27-TR

bahagian bahagian: 134544

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 60V, Semasa - Rata-rata Disahkan (Io): 600mA (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.25V @ 400mA, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 6ns,

Senarai harapan
BYV26B-TAP
Vishay Semiconductor Diodes Division

BYV26B-TAP

bahagian bahagian: 169957

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 2.5V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 30ns,

Senarai harapan
BYV38-TAP
Vishay Semiconductor Diodes Division

BYV38-TAP

bahagian bahagian: 177773

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 1000V, Semasa - Rata-rata Disahkan (Io): 2A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 300ns,

Senarai harapan
BYV26D-TR
Vishay Semiconductor Diodes Division

BYV26D-TR

bahagian bahagian: 121386

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 800V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 2.5V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 75ns,

Senarai harapan
BYV27-150-TAP
Vishay Semiconductor Diodes Division

BYV27-150-TAP

bahagian bahagian: 139081

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 165V, Semasa - Rata-rata Disahkan (Io): 2A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.07V @ 3A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 25ns,

Senarai harapan
BYV27-200-TAP
Vishay Semiconductor Diodes Division

BYV27-200-TAP

bahagian bahagian: 181381

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 2A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.07V @ 3A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 25ns,

Senarai harapan