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Diod - Pembetulan - Bujang

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BAV21WS-G3-08
Vishay Semiconductor Diodes Division

BAV21WS-G3-08

bahagian bahagian: 174085

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 250mA (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.25V @ 200mA, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 50ns,

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BYG10Y-M3/TR
Vishay Semiconductor Diodes Division

BYG10Y-M3/TR

bahagian bahagian: 113865

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 1600V, Semasa - Rata-rata Disahkan (Io): 1.5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.15V @ 1.5A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 4µs,

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BYG21K-E3/TR
Vishay Semiconductor Diodes Division

BYG21K-E3/TR

bahagian bahagian: 165220

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 800V, Semasa - Rata-rata Disahkan (Io): 1.5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.6V @ 1.5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 120ns,

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BAS16D-E3-08
Vishay Semiconductor Diodes Division

BAS16D-E3-08

bahagian bahagian: 126850

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 75V, Semasa - Rata-rata Disahkan (Io): 250mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.25V @ 150mA, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 6ns,

Senarai harapan
BAT54W-G3-08
Vishay Semiconductor Diodes Division

BAT54W-G3-08

bahagian bahagian: 125289

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 30V, Semasa - Rata-rata Disahkan (Io): 200mA (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 800mV @ 100mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed, Masa Pemulihan Berbalik (trr): 5ns,

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BYM11-400-E3/97
Vishay Semiconductor Diodes Division

BYM11-400-E3/97

bahagian bahagian: 128278

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.3V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 150ns,

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BAV21WS-HE3-18
Vishay Semiconductor Diodes Division

BAV21WS-HE3-18

bahagian bahagian: 143333

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 250mA (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.25V @ 200mA, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 50ns,

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BAS281-GS08
Vishay Semiconductor Diodes Division

BAS281-GS08

bahagian bahagian: 182315

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 40V, Semasa - Rata-rata Disahkan (Io): 30mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 15mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed,

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BAS16WS-HE3-18
Vishay Semiconductor Diodes Division

BAS16WS-HE3-18

bahagian bahagian: 192905

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 75V, Semasa - Rata-rata Disahkan (Io): 250mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.25V @ 150mA, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 6ns,

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BYW36-TAP
Vishay Semiconductor Diodes Division

BYW36-TAP

bahagian bahagian: 135103

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 2A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 200ns,

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BYM10-200-E3/97
Vishay Semiconductor Diodes Division

BYM10-200-E3/97

bahagian bahagian: 138454

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 1A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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BYM36E-TAP
Vishay Semiconductor Diodes Division

BYM36E-TAP

bahagian bahagian: 193769

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 1000V, Semasa - Rata-rata Disahkan (Io): 2.9A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.78V @ 3A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 150ns,

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BYV28-600-TR
Vishay Semiconductor Diodes Division

BYV28-600-TR

bahagian bahagian: 134642

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 3.5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.35V @ 5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 50ns,

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BAS170WS-HE3-18
Vishay Semiconductor Diodes Division

BAS170WS-HE3-18

bahagian bahagian: 133505

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 70V, Semasa - Rata-rata Disahkan (Io): 70mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 15mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed,

Senarai harapan
BAQ335-TR
Vishay Semiconductor Diodes Division

BAQ335-TR

bahagian bahagian: 190878

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 125V, Semasa - Rata-rata Disahkan (Io): 200mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 100mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed,

Senarai harapan
BYV27-200-TR
Vishay Semiconductor Diodes Division

BYV27-200-TR

bahagian bahagian: 153878

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 2A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.07V @ 3A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 25ns,

Senarai harapan
BAS83-GS08
Vishay Semiconductor Diodes Division

BAS83-GS08

bahagian bahagian: 115843

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 60V, Semasa - Rata-rata Disahkan (Io): 30mA (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 15mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed,

Senarai harapan
BY228-15TAP
Vishay Semiconductor Diodes Division

BY228-15TAP

bahagian bahagian: 193803

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io): 3A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.5V @ 5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 2µs,

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BAV21-TAP
Vishay Semiconductor Diodes Division

BAV21-TAP

bahagian bahagian: 150982

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 250mA (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 100mA, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 50ns,

Senarai harapan
BYM10-400-E3/97
Vishay Semiconductor Diodes Division

BYM10-400-E3/97

bahagian bahagian: 109607

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 1A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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BAQ133-GS08
Vishay Semiconductor Diodes Division

BAQ133-GS08

bahagian bahagian: 147679

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 30V, Semasa - Rata-rata Disahkan (Io): 200mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 100mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed,

Senarai harapan
BAT54-02V-V-G-18
Vishay Semiconductor Diodes Division

BAT54-02V-V-G-18

bahagian bahagian: 175247

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 30V, Semasa - Rata-rata Disahkan (Io): 200mA (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 800mV @ 100mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed, Masa Pemulihan Berbalik (trr): 5ns,

Senarai harapan
BAV301-TR
Vishay Semiconductor Diodes Division

BAV301-TR

bahagian bahagian: 119517

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io): 250mA (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 100mA, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 50ns,

Senarai harapan
BAS20-E3-18
Vishay Semiconductor Diodes Division

BAS20-E3-18

bahagian bahagian: 176831

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 150V, Semasa - Rata-rata Disahkan (Io): 200mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.25V @ 200mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed, Masa Pemulihan Berbalik (trr): 50ns,

Senarai harapan
BYV28-100-TAP
Vishay Semiconductor Diodes Division

BYV28-100-TAP

bahagian bahagian: 163502

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io): 3.5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 30ns,

Senarai harapan
B360A-E3/61T
Vishay Semiconductor Diodes Division

B360A-E3/61T

bahagian bahagian: 170389

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 60V, Semasa - Rata-rata Disahkan (Io): 3A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 720mV @ 3A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

Senarai harapan
BYG10YHM3_A/H
Vishay Semiconductor Diodes Division

BYG10YHM3_A/H

bahagian bahagian: 23260

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 1600V, Semasa - Rata-rata Disahkan (Io): 1.5A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.15V @ 1.5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 4µs,

Senarai harapan
BA157GP-E3/54
Vishay Semiconductor Diodes Division

BA157GP-E3/54

bahagian bahagian: 181076

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.3V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 150ns,

Senarai harapan
BAS16WS-G3-08
Vishay Semiconductor Diodes Division

BAS16WS-G3-08

bahagian bahagian: 190132

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 75V, Semasa - Rata-rata Disahkan (Io): 250mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.25V @ 150mA, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 6ns,

Senarai harapan
BAV19WS-HE3-08
Vishay Semiconductor Diodes Division

BAV19WS-HE3-08

bahagian bahagian: 102266

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io): 250mA (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.25V @ 200mA, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 50ns,

Senarai harapan
BAS21-E3-08
Vishay Semiconductor Diodes Division

BAS21-E3-08

bahagian bahagian: 101367

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 200mA (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.25V @ 200mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed, Masa Pemulihan Berbalik (trr): 50ns,

Senarai harapan
BAV21W-HE3-08
Vishay Semiconductor Diodes Division

BAV21W-HE3-08

bahagian bahagian: 110111

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 250mA (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 100mA, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 50ns,

Senarai harapan
BAT46W-G3-08
Vishay Semiconductor Diodes Division

BAT46W-G3-08

bahagian bahagian: 105403

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io): 150mA (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 250mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed,

Senarai harapan
BAV100-GS08
Vishay Semiconductor Diodes Division

BAV100-GS08

bahagian bahagian: 115219

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 50V, Semasa - Rata-rata Disahkan (Io): 250mA (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 100mA, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 50ns,

Senarai harapan
BYT78-TAP
Vishay Semiconductor Diodes Division

BYT78-TAP

bahagian bahagian: 181219

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 1000V, Semasa - Rata-rata Disahkan (Io): 3A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 3A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 250ns,

Senarai harapan
BYG10G-E3/TR
Vishay Semiconductor Diodes Division

BYG10G-E3/TR

bahagian bahagian: 136486

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io): 1.5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.15V @ 1.5A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 4µs,

Senarai harapan