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Diod - Pembetulan - Bujang

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S1PJHM3/85A
Vishay Semiconductor Diodes Division

S1PJHM3/85A

bahagian bahagian: 100588

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 1A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 1.8µs,

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UF1007-E3/54
Vishay Semiconductor Diodes Division

UF1007-E3/54

bahagian bahagian: 186255

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1000V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 75ns,

Senarai harapan
RS3BHE3_A/I
Vishay Semiconductor Diodes Division

RS3BHE3_A/I

bahagian bahagian: 156692

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io): 3A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.3V @ 2.5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 150ns,

Senarai harapan
MSS1P6HM3_A/H
Vishay Semiconductor Diodes Division

MSS1P6HM3_A/H

bahagian bahagian: 109

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 60V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 680mV @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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V8PA10HM3/I
Vishay Semiconductor Diodes Division

V8PA10HM3/I

bahagian bahagian: 125

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io): 8A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 760mV @ 8A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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VSSB410S-E3/5BT
Vishay Semiconductor Diodes Division

VSSB410S-E3/5BT

bahagian bahagian: 132852

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io): 1.9A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 770mV @ 4A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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VI10150S-M3/4W
Vishay Semiconductor Diodes Division

VI10150S-M3/4W

bahagian bahagian: 139157

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 150V, Semasa - Rata-rata Disahkan (Io): 10A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 10A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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VSB2045Y-M3/73
Vishay Semiconductor Diodes Division

VSB2045Y-M3/73

bahagian bahagian: 132927

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 45V, Semasa - Rata-rata Disahkan (Io): 6.5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 580mV @ 20A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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SE50PAB-M3/I
Vishay Semiconductor Diodes Division

SE50PAB-M3/I

bahagian bahagian: 110037

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io): 5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.16V @ 5A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 2µs,

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SS2P4HM3/85A
Vishay Semiconductor Diodes Division

SS2P4HM3/85A

bahagian bahagian: 197003

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 40V, Semasa - Rata-rata Disahkan (Io): 2A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 550mV @ 2A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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S3KHE3_A/H
Vishay Semiconductor Diodes Division

S3KHE3_A/H

bahagian bahagian: 108879

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 800V, Semasa - Rata-rata Disahkan (Io): 3A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.15V @ 2.5A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 2.5µs,

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V20PW15HM3/I
Vishay Semiconductor Diodes Division

V20PW15HM3/I

bahagian bahagian: 184501

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 150V, Semasa - Rata-rata Disahkan (Io): 20A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.47V @ 20A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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VSSAF512HM3/H
Vishay Semiconductor Diodes Division

VSSAF512HM3/H

bahagian bahagian: 134

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 120V, Semasa - Rata-rata Disahkan (Io): 5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 880mV @ 5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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SS32-M3/9AT
Vishay Semiconductor Diodes Division

SS32-M3/9AT

bahagian bahagian: 114835

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 20V, Semasa - Rata-rata Disahkan (Io): 3A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 500mV @ 3A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

Senarai harapan
SS3H9-M3/9AT
Vishay Semiconductor Diodes Division

SS3H9-M3/9AT

bahagian bahagian: 129238

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 90V, Semasa - Rata-rata Disahkan (Io): 3A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 800mV @ 3A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

Senarai harapan
SS22-M3/5BT
Vishay Semiconductor Diodes Division

SS22-M3/5BT

bahagian bahagian: 190295

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 20V, Semasa - Rata-rata Disahkan (Io): 2A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 500mV @ 2A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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VSSAF515-M3/I
Vishay Semiconductor Diodes Division

VSSAF515-M3/I

bahagian bahagian: 105

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 150V, Semasa - Rata-rata Disahkan (Io): 5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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VS-3EJH01-M3/6A
Vishay Semiconductor Diodes Division

VS-3EJH01-M3/6A

bahagian bahagian: 104809

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io): 3A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 930mV @ 3A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 18ns,

Senarai harapan
SS2H9HE3_A/H
Vishay Semiconductor Diodes Division

SS2H9HE3_A/H

bahagian bahagian: 95

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 90V, Semasa - Rata-rata Disahkan (Io): 2A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 790mV @ 2A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

Senarai harapan
S1PMHM3/85A
Vishay Semiconductor Diodes Division

S1PMHM3/85A

bahagian bahagian: 159169

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1000V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 1A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 1.8µs,

Senarai harapan
SB550A-E3/73
Vishay Semiconductor Diodes Division

SB550A-E3/73

bahagian bahagian: 118189

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 50V, Semasa - Rata-rata Disahkan (Io): 5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 700mV @ 5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

Senarai harapan
UF1007-E3/73
Vishay Semiconductor Diodes Division

UF1007-E3/73

bahagian bahagian: 182958

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1000V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 75ns,

Senarai harapan
VT3080S-M3/4W
Vishay Semiconductor Diodes Division

VT3080S-M3/4W

bahagian bahagian: 119292

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 80V, Semasa - Rata-rata Disahkan (Io): 30A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 950mV @ 30A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

Senarai harapan
VSSAF515HM3/H
Vishay Semiconductor Diodes Division

VSSAF515HM3/H

bahagian bahagian: 95

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 150V, Semasa - Rata-rata Disahkan (Io): 5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

Senarai harapan
VS-10BQ100-M3/5BT
Vishay Semiconductor Diodes Division

VS-10BQ100-M3/5BT

bahagian bahagian: 140931

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 750mV @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

Senarai harapan
SB110-E3/54
Vishay Semiconductor Diodes Division

SB110-E3/54

bahagian bahagian: 142142

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 10V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 480mV @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

Senarai harapan
RS3A-E3/9AT
Vishay Semiconductor Diodes Division

RS3A-E3/9AT

bahagian bahagian: 133316

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 50V, Semasa - Rata-rata Disahkan (Io): 3A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.3V @ 2.5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 150ns,

Senarai harapan
RS2DHE3_A/H
Vishay Semiconductor Diodes Division

RS2DHE3_A/H

bahagian bahagian: 97

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 1.5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.3V @ 1.5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 150ns,

Senarai harapan
SS2P2LHM3/84A
Vishay Semiconductor Diodes Division

SS2P2LHM3/84A

bahagian bahagian: 125587

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 20V, Semasa - Rata-rata Disahkan (Io): 2A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 500mV @ 2A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

Senarai harapan
MBR1090-E3/4W
Vishay Semiconductor Diodes Division

MBR1090-E3/4W

bahagian bahagian: 95961

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 90V, Semasa - Rata-rata Disahkan (Io): 10A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 800mV @ 10A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

Senarai harapan
VSSAF5M12HM3/I
Vishay Semiconductor Diodes Division

VSSAF5M12HM3/I

bahagian bahagian: 96

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 120V, Semasa - Rata-rata Disahkan (Io): 5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 890mV @ 5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

Senarai harapan
S3B-E3/9AT
Vishay Semiconductor Diodes Division

S3B-E3/9AT

bahagian bahagian: 153320

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io): 3A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.15V @ 2.5A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 2.5µs,

Senarai harapan
SS1P3LHM3/85A
Vishay Semiconductor Diodes Division

SS1P3LHM3/85A

bahagian bahagian: 146430

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 30V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 450mV @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

Senarai harapan
VI20120S-M3/4W
Vishay Semiconductor Diodes Division

VI20120S-M3/4W

bahagian bahagian: 126411

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 120V, Semasa - Rata-rata Disahkan (Io): 20A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.12V @ 20A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

Senarai harapan
UF4004-M3/54
Vishay Semiconductor Diodes Division

UF4004-M3/54

bahagian bahagian: 125811

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 50ns,

Senarai harapan
V8PA15HM3/I
Vishay Semiconductor Diodes Division

V8PA15HM3/I

bahagian bahagian: 157

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 150V, Semasa - Rata-rata Disahkan (Io): 8A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 8A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

Senarai harapan