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Diod - Pembetulan - Bujang

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  • Diod - Pembetulan - Bujang
S1AFG-M3/6A
Vishay Semiconductor Diodes Division

S1AFG-M3/6A

bahagian bahagian: 112349

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 1A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 1.47µs,

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VSSAF3M10-M3/H
Vishay Semiconductor Diodes Division

VSSAF3M10-M3/H

bahagian bahagian: 100

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io): 3A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 720mV @ 3A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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SS10P6HM3_A/I
Vishay Semiconductor Diodes Division

SS10P6HM3_A/I

bahagian bahagian: 182602

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 60V, Semasa - Rata-rata Disahkan (Io): 7A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 670mV @ 7A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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S1AFK-M3/6A
Vishay Semiconductor Diodes Division

S1AFK-M3/6A

bahagian bahagian: 171353

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 800V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 1A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 1.47µs,

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SS10PH45HM3_A/I
Vishay Semiconductor Diodes Division

SS10PH45HM3_A/I

bahagian bahagian: 141131

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 45V, Semasa - Rata-rata Disahkan (Io): 10A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 720mV @ 10A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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V15P6HM3_A/I
Vishay Semiconductor Diodes Division

V15P6HM3_A/I

bahagian bahagian: 92

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 60V, Semasa - Rata-rata Disahkan (Io): 15A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 620mV @ 15A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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V8P8-M3/86A
Vishay Semiconductor Diodes Division

V8P8-M3/86A

bahagian bahagian: 188033

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 80V, Semasa - Rata-rata Disahkan (Io): 4A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 660mV @ 8A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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V8P15-M3/H
Vishay Semiconductor Diodes Division

V8P15-M3/H

bahagian bahagian: 163

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 150V, Semasa - Rata-rata Disahkan (Io): 8A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.08V @ 8A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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VS-6ESH01-M3/86A
Vishay Semiconductor Diodes Division

VS-6ESH01-M3/86A

bahagian bahagian: 177394

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io): 6A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 940mV @ 6A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 22ns,

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VT5202-M3/4W
Vishay Semiconductor Diodes Division

VT5202-M3/4W

bahagian bahagian: 92742

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 880mV @ 5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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SE30PAGHM3/I
Vishay Semiconductor Diodes Division

SE30PAGHM3/I

bahagian bahagian: 178133

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io): 3A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.16V @ 3A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 1.3µs,

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V15P8HM3_A/H
Vishay Semiconductor Diodes Division

V15P8HM3_A/H

bahagian bahagian: 164

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 80V, Semasa - Rata-rata Disahkan (Io): 15A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 660mV @ 15A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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S4PKHM3_A/I
Vishay Semiconductor Diodes Division

S4PKHM3_A/I

bahagian bahagian: 101974

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 800V, Semasa - Rata-rata Disahkan (Io): 4A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 4A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 2.5µs,

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SB2H100-E3/54
Vishay Semiconductor Diodes Division

SB2H100-E3/54

bahagian bahagian: 180596

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io): 2A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 790mV @ 2A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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V12P15-M3/I
Vishay Semiconductor Diodes Division

V12P15-M3/I

bahagian bahagian: 124

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 150V, Semasa - Rata-rata Disahkan (Io): 12A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.08V @ 12A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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SS5P9HM3_A/I
Vishay Semiconductor Diodes Division

SS5P9HM3_A/I

bahagian bahagian: 128

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 90V, Semasa - Rata-rata Disahkan (Io): 5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 880mV @ 5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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V8P8HM3_A/H
Vishay Semiconductor Diodes Division

V8P8HM3_A/H

bahagian bahagian: 171

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 80V, Semasa - Rata-rata Disahkan (Io): 8A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 660mV @ 8A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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SS10P3HM3_A/I
Vishay Semiconductor Diodes Division

SS10P3HM3_A/I

bahagian bahagian: 157059

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 30V, Semasa - Rata-rata Disahkan (Io): 10A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 560mV @ 10A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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V8PAL45-M3/I
Vishay Semiconductor Diodes Division

V8PAL45-M3/I

bahagian bahagian: 128585

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 45V, Semasa - Rata-rata Disahkan (Io): 4A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 570mV @ 8A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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SS3P6LHM3_A/H
Vishay Semiconductor Diodes Division

SS3P6LHM3_A/H

bahagian bahagian: 163508

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 60V, Semasa - Rata-rata Disahkan (Io): 3A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 600mV @ 3A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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V12P8-M3/87A
Vishay Semiconductor Diodes Division

V12P8-M3/87A

bahagian bahagian: 199224

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 80V, Semasa - Rata-rata Disahkan (Io): 4.3A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 660mV @ 12A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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V15P12HM3/H
Vishay Semiconductor Diodes Division

V15P12HM3/H

bahagian bahagian: 107

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 120V, Semasa - Rata-rata Disahkan (Io): 15A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 810mV @ 15A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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V12P15HM3/H
Vishay Semiconductor Diodes Division

V12P15HM3/H

bahagian bahagian: 128

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 150V, Semasa - Rata-rata Disahkan (Io): 12A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.08V @ 12A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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VSSAF510HM3/H
Vishay Semiconductor Diodes Division

VSSAF510HM3/H

bahagian bahagian: 142

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io): 5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 750mV @ 5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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VS-2EJH02-M3/6B
Vishay Semiconductor Diodes Division

VS-2EJH02-M3/6B

bahagian bahagian: 116384

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 2A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 930mV @ 2A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 25ns,

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VSSAF5M12-M3/I
Vishay Semiconductor Diodes Division

VSSAF5M12-M3/I

bahagian bahagian: 68

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 120V, Semasa - Rata-rata Disahkan (Io): 5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 890mV @ 5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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VS-2EJH01HM3/6B
Vishay Semiconductor Diodes Division

VS-2EJH01HM3/6B

bahagian bahagian: 103724

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io): 2A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 930mV @ 2A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 25ns,

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VS-400UR160D
Vishay Semiconductor Diodes Division

VS-400UR160D

bahagian bahagian: 1361

Jenis Diod: Standard, Reverse Polarity, Voltan - Terbalik DC (Vr) (Maks): 1600V, Semasa - Rata-rata Disahkan (Io): 400A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.62V @ 1500A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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VS-SD400N20PC
Vishay Semiconductor Diodes Division

VS-SD400N20PC

bahagian bahagian: 741

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 2000V, Semasa - Rata-rata Disahkan (Io): 400A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.62V @ 1500A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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VSSAF510-M3/I
Vishay Semiconductor Diodes Division

VSSAF510-M3/I

bahagian bahagian: 114

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io): 5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 750mV @ 5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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SS1FN6-M3/I
Vishay Semiconductor Diodes Division

SS1FN6-M3/I

bahagian bahagian: 103

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 60V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 530mV @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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V10PM12-M3/86A
Vishay Semiconductor Diodes Division

V10PM12-M3/86A

bahagian bahagian: 160229

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 120V, Semasa - Rata-rata Disahkan (Io): 3.9A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 830mV @ 10A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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V8PAN50-M3/I
Vishay Semiconductor Diodes Division

V8PAN50-M3/I

bahagian bahagian: 188473

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 50V, Semasa - Rata-rata Disahkan (Io): 3.7A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 420mV @ 4A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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VSSAF5L45-M3/6A
Vishay Semiconductor Diodes Division

VSSAF5L45-M3/6A

bahagian bahagian: 99042

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 45V, Semasa - Rata-rata Disahkan (Io): 3A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 560mV @ 5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

Senarai harapan
SE30PAG-M3/I
Vishay Semiconductor Diodes Division

SE30PAG-M3/I

bahagian bahagian: 119037

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io): 3A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.16V @ 3A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 1.3µs,

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VSSAF512-M3/I
Vishay Semiconductor Diodes Division

VSSAF512-M3/I

bahagian bahagian: 67

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 120V, Semasa - Rata-rata Disahkan (Io): 5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 880mV @ 5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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