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Diod - Pembetulan - Bujang

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VS-3EJH01HM3/6A
Vishay Semiconductor Diodes Division

VS-3EJH01HM3/6A

bahagian bahagian: 165175

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io): 3A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 930mV @ 3A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 18ns,

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SB1H90-E3/73
Vishay Semiconductor Diodes Division

SB1H90-E3/73

bahagian bahagian: 176647

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 90V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 770mV @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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S1PD-M3/85A
Vishay Semiconductor Diodes Division

S1PD-M3/85A

bahagian bahagian: 115870

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 1A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 1.8µs,

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SS24-E3/5BT
Vishay Semiconductor Diodes Division

SS24-E3/5BT

bahagian bahagian: 181211

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 40V, Semasa - Rata-rata Disahkan (Io): 2A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 500mV @ 2A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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SS3H9-M3/57T
Vishay Semiconductor Diodes Division

SS3H9-M3/57T

bahagian bahagian: 159623

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 90V, Semasa - Rata-rata Disahkan (Io): 3A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 800mV @ 3A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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UG4C-E3/54
Vishay Semiconductor Diodes Division

UG4C-E3/54

bahagian bahagian: 177524

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 150V, Semasa - Rata-rata Disahkan (Io): 4A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 950mV @ 4A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 30ns,

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VS-10BQ015HM3/5BT
Vishay Semiconductor Diodes Division

VS-10BQ015HM3/5BT

bahagian bahagian: 189348

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 15V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 330mV @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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VSSAF5M15-M3/H
Vishay Semiconductor Diodes Division

VSSAF5M15-M3/H

bahagian bahagian: 151

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 150V, Semasa - Rata-rata Disahkan (Io): 5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.15V @ 5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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RS2D-M3/52T
Vishay Semiconductor Diodes Division

RS2D-M3/52T

bahagian bahagian: 156675

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 1.5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.3V @ 1.5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 150ns,

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VS-3EGU06-M3/5BT
Vishay Semiconductor Diodes Division

VS-3EGU06-M3/5BT

bahagian bahagian: 178519

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 3A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 3A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 25ns,

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VS-MBRS190-M3/5BT
Vishay Semiconductor Diodes Division

VS-MBRS190-M3/5BT

bahagian bahagian: 185272

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 90V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 780mV @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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VS-3EJH02HM3/6A
Vishay Semiconductor Diodes Division

VS-3EJH02HM3/6A

bahagian bahagian: 178329

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 3A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 930mV @ 3A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 18ns,

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SL42-E3/57T
Vishay Semiconductor Diodes Division

SL42-E3/57T

bahagian bahagian: 165298

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 20V, Semasa - Rata-rata Disahkan (Io): 4A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 420mV @ 4A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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V8PAM12-M3/I
Vishay Semiconductor Diodes Division

V8PAM12-M3/I

bahagian bahagian: 136

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 120V, Semasa - Rata-rata Disahkan (Io): 8A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 880mV @ 8A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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S1AFJ-M3/6A
Vishay Semiconductor Diodes Division

S1AFJ-M3/6A

bahagian bahagian: 190753

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 1A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 1.47µs,

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GPP10J-E3/73
Vishay Semiconductor Diodes Division

GPP10J-E3/73

bahagian bahagian: 115689

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 1A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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VS-10BQ040HM3/5BT
Vishay Semiconductor Diodes Division

VS-10BQ040HM3/5BT

bahagian bahagian: 133136

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 40V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 450mV @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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UG1A-E3/54
Vishay Semiconductor Diodes Division

UG1A-E3/54

bahagian bahagian: 164168

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 50V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 950mV @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 25ns,

Senarai harapan
SS2PH10-M3/85A
Vishay Semiconductor Diodes Division

SS2PH10-M3/85A

bahagian bahagian: 169958

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io): 2A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 800mV @ 2A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

Senarai harapan
SS2PH5HM3/85A
Vishay Semiconductor Diodes Division

SS2PH5HM3/85A

bahagian bahagian: 102737

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 50V, Semasa - Rata-rata Disahkan (Io): 2A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 800mV @ 2A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

Senarai harapan
CS3K-E3/I
Vishay Semiconductor Diodes Division

CS3K-E3/I

bahagian bahagian: 156130

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 800V, Semasa - Rata-rata Disahkan (Io): 2A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.15V @ 3A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 2.8µs,

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GPP10J-E3/54
Vishay Semiconductor Diodes Division

GPP10J-E3/54

bahagian bahagian: 102282

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 1A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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S1PM-M3/85A
Vishay Semiconductor Diodes Division

S1PM-M3/85A

bahagian bahagian: 147401

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1000V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 1A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 1.8µs,

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S2KHE3_A/I
Vishay Semiconductor Diodes Division

S2KHE3_A/I

bahagian bahagian: 171812

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 800V, Semasa - Rata-rata Disahkan (Io): 1.5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.15V @ 1.5A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 2µs,

Senarai harapan
V8PA10-M3/I
Vishay Semiconductor Diodes Division

V8PA10-M3/I

bahagian bahagian: 110

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io): 8A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 760mV @ 8A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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S2K-M3/52T
Vishay Semiconductor Diodes Division

S2K-M3/52T

bahagian bahagian: 117990

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 800V, Semasa - Rata-rata Disahkan (Io): 1.5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.15V @ 1.5A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 2µs,

Senarai harapan
V20150S-M3/4W
Vishay Semiconductor Diodes Division

V20150S-M3/4W

bahagian bahagian: 106130

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 150V, Semasa - Rata-rata Disahkan (Io): 20A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.6V @ 20A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

Senarai harapan
VSSAF5M6HM3/H
Vishay Semiconductor Diodes Division

VSSAF5M6HM3/H

bahagian bahagian: 77

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 60V, Semasa - Rata-rata Disahkan (Io): 5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 660mV @ 5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

Senarai harapan
S3M-M3/9AT
Vishay Semiconductor Diodes Division

S3M-M3/9AT

bahagian bahagian: 181258

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1000V, Semasa - Rata-rata Disahkan (Io): 3A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.15V @ 2.5A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 2.5µs,

Senarai harapan
SE30PAD-M3/I
Vishay Semiconductor Diodes Division

SE30PAD-M3/I

bahagian bahagian: 166924

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 3A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.16V @ 3A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 1.3µs,

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V8PA15-M3/I
Vishay Semiconductor Diodes Division

V8PA15-M3/I

bahagian bahagian: 123

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 150V, Semasa - Rata-rata Disahkan (Io): 8A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 8A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

Senarai harapan
V8PA12-M3/I
Vishay Semiconductor Diodes Division

V8PA12-M3/I

bahagian bahagian: 156

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 120V, Semasa - Rata-rata Disahkan (Io): 8A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 870mV @ 8A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

Senarai harapan
RS3A-M3/9AT
Vishay Semiconductor Diodes Division

RS3A-M3/9AT

bahagian bahagian: 179050

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 50V, Semasa - Rata-rata Disahkan (Io): 3A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.3V @ 2.5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 150ns,

Senarai harapan
S3B-M3/9AT
Vishay Semiconductor Diodes Division

S3B-M3/9AT

bahagian bahagian: 143312

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io): 3A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.15V @ 2.5A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 2.5µs,

Senarai harapan
S1PG-M3/85A
Vishay Semiconductor Diodes Division

S1PG-M3/85A

bahagian bahagian: 167861

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 1A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 1.8µs,

Senarai harapan
V10P8-M3/87A
Vishay Semiconductor Diodes Division

V10P8-M3/87A

bahagian bahagian: 156354

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 80V, Semasa - Rata-rata Disahkan (Io): 3.9A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 680mV @ 10A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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