Diod - Pembetulan - Bujang | Produk Semikonduktor Diskrit | 100

V10P20-M3/86A

bahagian bahagian: 92650

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 2.4A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.34V @ 10A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

V12PM12HM3_A/H

bahagian bahagian: 193867

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 120V, Semasa - Rata-rata Disahkan (Io): 4.1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 830mV @ 12A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

V15P12-M3/H

bahagian bahagian: 111

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 120V, Semasa - Rata-rata Disahkan (Io): 15A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 810mV @ 15A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

V8P10HM3_A/H

bahagian bahagian: 132074

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io): 8A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 680mV @ 8A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

V10PM10-M3/H

bahagian bahagian: 147

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io): 10A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 750mV @ 10A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

V10P45HM3_A/I

bahagian bahagian: 90

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 45V, Semasa - Rata-rata Disahkan (Io): 10A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 570mV @ 10A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

V15P45HM3_A/I

bahagian bahagian: 99

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 45V, Semasa - Rata-rata Disahkan (Io): 15A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 580mV @ 15A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

V15P15-M3/I

bahagian bahagian: 158

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 150V, Semasa - Rata-rata Disahkan (Io): 15A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.08V @ 15A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

VS-4ESH02-M3/86A

bahagian bahagian: 197554

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 4A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 930mV @ 4A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 20ns,

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Vishay Semiconductor Diodes Division

SS5P9-M3/87A

bahagian bahagian: 101174

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 90V, Semasa - Rata-rata Disahkan (Io): 5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 880mV @ 5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

V8P12-M3/87A

bahagian bahagian: 151897

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 120V, Semasa - Rata-rata Disahkan (Io): 8A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 840mV @ 8A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

V12P45HM3_A/H

bahagian bahagian: 162

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 45V, Semasa - Rata-rata Disahkan (Io): 12A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 580mV @ 12A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

S4PKHM3_A/H

bahagian bahagian: 194865

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 800V, Semasa - Rata-rata Disahkan (Io): 4A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 4A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 2.5µs,

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Vishay Semiconductor Diodes Division

SS5P5HM3_A/I

bahagian bahagian: 180126

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 50V, Semasa - Rata-rata Disahkan (Io): 5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 690mV @ 5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

VS-6ESU06-M3/87A

bahagian bahagian: 160846

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 6A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.3V @ 6A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 58ns,

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Vishay Semiconductor Diodes Division

SS12P4S-M3/86A

bahagian bahagian: 152154

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 30V, Semasa - Rata-rata Disahkan (Io): 12A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 600mV @ 12A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

SS5P4HM3_A/H

bahagian bahagian: 199365

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 40V, Semasa - Rata-rata Disahkan (Io): 5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 520mV @ 5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

V8P12HM3_A/I

bahagian bahagian: 164307

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 120V, Semasa - Rata-rata Disahkan (Io): 8A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 840mV @ 8A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

SS10PH9HM3_A/I

bahagian bahagian: 85

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 90V, Semasa - Rata-rata Disahkan (Io): 10A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 880mV @ 10A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

SS5P4-M3/87A

bahagian bahagian: 105841

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 40V, Semasa - Rata-rata Disahkan (Io): 5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 520mV @ 5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

V8PM12-M3/87A

bahagian bahagian: 158269

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 120V, Semasa - Rata-rata Disahkan (Io): 3.6A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 620mV @ 4A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

SS15P3S-M3/87A

bahagian bahagian: 184120

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 30V, Semasa - Rata-rata Disahkan (Io): 15A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 570mV @ 15A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

V15PM12HM3/I

bahagian bahagian: 171

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 120V, Semasa - Rata-rata Disahkan (Io): 15A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 840mV @ 15A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

SS3P5LHM3_A/I

bahagian bahagian: 183280

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 50V, Semasa - Rata-rata Disahkan (Io): 3A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 600mV @ 3A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

SS10PH45-M3/87A

bahagian bahagian: 121493

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 45V, Semasa - Rata-rata Disahkan (Io): 10A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 720mV @ 10A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

SS5P9HM3_A/H

bahagian bahagian: 125

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 90V, Semasa - Rata-rata Disahkan (Io): 5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 880mV @ 5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

V12P8HM3_A/I

bahagian bahagian: 166

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 80V, Semasa - Rata-rata Disahkan (Io): 12A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 660mV @ 12A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

S4PB-M3/87A

bahagian bahagian: 113911

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io): 4A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 4A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 2.5µs,

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Vishay Semiconductor Diodes Division

SS10P6HM3_A/H

bahagian bahagian: 176141

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 60V, Semasa - Rata-rata Disahkan (Io): 7A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 670mV @ 7A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

SS15P3S-M3/86A

bahagian bahagian: 163661

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 30V, Semasa - Rata-rata Disahkan (Io): 15A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 570mV @ 15A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

S4PD-M3/87A

bahagian bahagian: 130181

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 4A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 4A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 2.5µs,

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Vishay Semiconductor Diodes Division

V15P10HM3/I

bahagian bahagian: 100

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io): 15A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 710mV @ 15A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

VS-6ESH06HM3/87A

bahagian bahagian: 146227

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 6A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.8V @ 6A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 40ns,

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Vishay Semiconductor Diodes Division

SS10P3-M3/86A

bahagian bahagian: 197697

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 30V, Semasa - Rata-rata Disahkan (Io): 10A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 560mV @ 10A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

V10P45HM3_A/H

bahagian bahagian: 110

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 45V, Semasa - Rata-rata Disahkan (Io): 10A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 570mV @ 10A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

V12PM12HM3_A/I

bahagian bahagian: 193816

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 120V, Semasa - Rata-rata Disahkan (Io): 4.1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 830mV @ 12A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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