Menu
MelayuMelayu
Rfqs / order.
0Rfqs / order.

Transistor - FET, MOSFET - Susunan

AUIRF7343Q
Infineon Technologies

AUIRF7343Q

bahagian bahagian: 2791

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 55V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.7A, 3.4A, Rds On (Maks) @ Id, Vgs: 50 mOhm @ 4.7A, 10V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

Bersenang-senang
ALD1115MAL
Advanced Linear Devices Inc.

ALD1115MAL

bahagian bahagian: 31406

Jenis FET: N and P-Channel Complementary, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 10.6V, Rds On (Maks) @ Id, Vgs: 1800 Ohm @ 5V, Vgs (th) (Maks) @ Id: 1V @ 1µA,

Bersenang-senang
ALD111933MAL
Advanced Linear Devices Inc.

ALD111933MAL

bahagian bahagian: 33438

Jenis FET: 2 N-Channel (Dual) Matched Pair, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 10.6V, Rds On (Maks) @ Id, Vgs: 500 Ohm @ 5.9V, Vgs (th) (Maks) @ Id: 3.35V @ 1µA,

Bersenang-senang
AO6810
Alpha & Omega Semiconductor Inc.

AO6810

bahagian bahagian: 3334

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.5A, Rds On (Maks) @ Id, Vgs: 50 mOhm @ 3.5A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

Bersenang-senang
APTM60A23FT1G
Microsemi Corporation

APTM60A23FT1G

bahagian bahagian: 2807

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 20A, Rds On (Maks) @ Id, Vgs: 276 mOhm @ 17A, 10V, Vgs (th) (Maks) @ Id: 5V @ 1mA,

Bersenang-senang
APTM50TDUM65PG
Microsemi Corporation

APTM50TDUM65PG

bahagian bahagian: 3356

Jenis FET: 6 N-Channel (3-Phase Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 500V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 51A, Rds On (Maks) @ Id, Vgs: 78 mOhm @ 25.5A, 10V, Vgs (th) (Maks) @ Id: 5V @ 2.5mA,

Bersenang-senang
APTM50DUM38TG
Microsemi Corporation

APTM50DUM38TG

bahagian bahagian: 2789

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 500V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 90A, Rds On (Maks) @ Id, Vgs: 45 mOhm @ 45A, 10V, Vgs (th) (Maks) @ Id: 5V @ 5mA,

Bersenang-senang
APTM50DUM25TG
Microsemi Corporation

APTM50DUM25TG

bahagian bahagian: 2781

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 500V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 149A, Rds On (Maks) @ Id, Vgs: 25 mOhm @ 74.5A, 10V, Vgs (th) (Maks) @ Id: 4V @ 8mA,

Bersenang-senang
APTM50DUM35TG
Microsemi Corporation

APTM50DUM35TG

bahagian bahagian: 2820

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 500V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 99A, Rds On (Maks) @ Id, Vgs: 39 mOhm @ 49.5A, 10V, Vgs (th) (Maks) @ Id: 5V @ 5mA,

Bersenang-senang
APTM50DUM19G
Microsemi Corporation

APTM50DUM19G

bahagian bahagian: 2832

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 500V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 163A, Rds On (Maks) @ Id, Vgs: 22.5 mOhm @ 81.5A, 10V, Vgs (th) (Maks) @ Id: 5V @ 10mA,

Bersenang-senang
APTM50DUM17G
Microsemi Corporation

APTM50DUM17G

bahagian bahagian: 2758

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 500V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 180A, Rds On (Maks) @ Id, Vgs: 20 mOhm @ 90A, 10V, Vgs (th) (Maks) @ Id: 5V @ 10mA,

Bersenang-senang
APTM50DSKM65T3G
Microsemi Corporation

APTM50DSKM65T3G

bahagian bahagian: 3279

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 500V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 51A, Rds On (Maks) @ Id, Vgs: 78 mOhm @ 25.5A, 10V, Vgs (th) (Maks) @ Id: 5V @ 2.5mA,

Bersenang-senang
APTM50DHM75TG
Microsemi Corporation

APTM50DHM75TG

bahagian bahagian: 2739

Jenis FET: 2 N-Channel (Dual) Asymmetrical, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 500V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 46A, Rds On (Maks) @ Id, Vgs: 90 mOhm @ 23A, 10V, Vgs (th) (Maks) @ Id: 5V @ 2.5mA,

Bersenang-senang
APTM50DSK10T3G
Microsemi Corporation

APTM50DSK10T3G

bahagian bahagian: 2805

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 500V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 37A, Rds On (Maks) @ Id, Vgs: 120 mOhm @ 18.5A, 10V, Vgs (th) (Maks) @ Id: 5V @ 1mA,

Bersenang-senang
APTM50DHM65TG
Microsemi Corporation

APTM50DHM65TG

bahagian bahagian: 3354

Jenis FET: 2 N-Channel (Dual) Asymmetrical, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 500V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 51A, Rds On (Maks) @ Id, Vgs: 78 mOhm @ 25.5A, 10V, Vgs (th) (Maks) @ Id: 5V @ 2.5mA,

Bersenang-senang
APTM50AM25FTG
Microsemi Corporation

APTM50AM25FTG

bahagian bahagian: 2755

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 500V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 149A, Rds On (Maks) @ Id, Vgs: 25 mOhm @ 74.5A, 10V, Vgs (th) (Maks) @ Id: 4V @ 8mA,

Bersenang-senang
APTM50AM70FT1G
Microsemi Corporation

APTM50AM70FT1G

bahagian bahagian: 2771

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 500V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 50A, Rds On (Maks) @ Id, Vgs: 84 mOhm @ 42A, 10V, Vgs (th) (Maks) @ Id: 5V @ 2.5mA,

Bersenang-senang
APTM50A15FT1G
Microsemi Corporation

APTM50A15FT1G

bahagian bahagian: 2761

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 500V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 25A, Rds On (Maks) @ Id, Vgs: 180 mOhm @ 21A, 10V, Vgs (th) (Maks) @ Id: 5V @ 1mA,

Bersenang-senang
APTM50AM19STG
Microsemi Corporation

APTM50AM19STG

bahagian bahagian: 2747

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: Silicon Carbide (SiC), Saliran ke Voltan Sumber (Vdss): 500V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 170A, Rds On (Maks) @ Id, Vgs: 19 mOhm @ 85A, 10V, Vgs (th) (Maks) @ Id: 5V @ 10mA,

Bersenang-senang
APTM20DUM10TG
Microsemi Corporation

APTM20DUM10TG

bahagian bahagian: 2803

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 175A, Rds On (Maks) @ Id, Vgs: 12 mOhm @ 87.5A, 10V, Vgs (th) (Maks) @ Id: 5V @ 5mA,

Bersenang-senang
APTM20TDUM16PG
Microsemi Corporation

APTM20TDUM16PG

bahagian bahagian: 2825

Jenis FET: 6 N-Channel (3-Phase Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 104A, Rds On (Maks) @ Id, Vgs: 19 mOhm @ 52A, 10V, Vgs (th) (Maks) @ Id: 5V @ 2.5mA,

Bersenang-senang
APTM20DUM05TG
Microsemi Corporation

APTM20DUM05TG

bahagian bahagian: 2827

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 333A, Rds On (Maks) @ Id, Vgs: 5 mOhm @ 166.5A, 10V, Vgs (th) (Maks) @ Id: 4V @ 8mA,

Bersenang-senang
APTM20DHM10G
Microsemi Corporation

APTM20DHM10G

bahagian bahagian: 2785

Jenis FET: 2 N-Channel (Dual) Asymmetrical, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 175A, Rds On (Maks) @ Id, Vgs: 12 mOhm @ 87.5A, 10V, Vgs (th) (Maks) @ Id: 5V @ 5mA,

Bersenang-senang
APTM20DHM16TG
Microsemi Corporation

APTM20DHM16TG

bahagian bahagian: 2733

Jenis FET: 2 N-Channel (Dual) Asymmetrical, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 104A, Rds On (Maks) @ Id, Vgs: 19 mOhm @ 52A, 10V, Vgs (th) (Maks) @ Id: 5V @ 2.5mA,

Bersenang-senang
APTM20DHM08G
Microsemi Corporation

APTM20DHM08G

bahagian bahagian: 2824

Jenis FET: 2 N-Channel (Dual) Asymmetrical, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 208A, Rds On (Maks) @ Id, Vgs: 10 mOhm @ 104A, 10V, Vgs (th) (Maks) @ Id: 5V @ 5mA,

Bersenang-senang
APTM20AM05FTG
Microsemi Corporation

APTM20AM05FTG

bahagian bahagian: 2762

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 333A, Rds On (Maks) @ Id, Vgs: 5 mOhm @ 166.5A, 10V, Vgs (th) (Maks) @ Id: 4V @ 8mA,

Bersenang-senang
APTM120TDU57PG
Microsemi Corporation

APTM120TDU57PG

bahagian bahagian: 2732

Jenis FET: 6 N-Channel (3-Phase Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 1200V (1.2kV), Semasa - Saliran Berterusan (Id) @ 25 ° C: 17A, Rds On (Maks) @ Id, Vgs: 684 mOhm @ 8.5A, 10V, Vgs (th) (Maks) @ Id: 5V @ 2.5mA,

Bersenang-senang
APTM120H57FT3G
Microsemi Corporation

APTM120H57FT3G

bahagian bahagian: 2766

Jenis FET: 4 N-Channel (H-Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 1200V (1.2kV), Semasa - Saliran Berterusan (Id) @ 25 ° C: 17A, Rds On (Maks) @ Id, Vgs: 684 mOhm @ 8.5A, 10V, Vgs (th) (Maks) @ Id: 5V @ 2.5mA,

Bersenang-senang
APTM120DU29TG
Microsemi Corporation

APTM120DU29TG

bahagian bahagian: 2792

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 1200V (1.2kV), Semasa - Saliran Berterusan (Id) @ 25 ° C: 34A, Rds On (Maks) @ Id, Vgs: 348 mOhm @ 17A, 10V, Vgs (th) (Maks) @ Id: 5V @ 5mA,

Bersenang-senang
APTM120DSK57T3G
Microsemi Corporation

APTM120DSK57T3G

bahagian bahagian: 2791

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 1200V (1.2kV), Semasa - Saliran Berterusan (Id) @ 25 ° C: 17A, Rds On (Maks) @ Id, Vgs: 684 mOhm @ 8.5A, 10V, Vgs (th) (Maks) @ Id: 5V @ 2.5mA,

Bersenang-senang
APTM120A80FT1G
Microsemi Corporation

APTM120A80FT1G

bahagian bahagian: 2744

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 1200V (1.2kV), Semasa - Saliran Berterusan (Id) @ 25 ° C: 14A, Rds On (Maks) @ Id, Vgs: 960 mOhm @ 12A, 10V, Vgs (th) (Maks) @ Id: 5V @ 2.5mA,

Bersenang-senang
APTM120DDA57T3G
Microsemi Corporation

APTM120DDA57T3G

bahagian bahagian: 2827

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 1200V (1.2kV), Semasa - Saliran Berterusan (Id) @ 25 ° C: 17A, Rds On (Maks) @ Id, Vgs: 684 mOhm @ 8.5A, 10V, Vgs (th) (Maks) @ Id: 5V @ 2.5mA,

Bersenang-senang
APTM120A65FT1G
Microsemi Corporation

APTM120A65FT1G

bahagian bahagian: 2750

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 1200V (1.2kV), Semasa - Saliran Berterusan (Id) @ 25 ° C: 16A, Rds On (Maks) @ Id, Vgs: 780 mOhm @ 14A, 10V, Vgs (th) (Maks) @ Id: 5V @ 2.5mA,

Bersenang-senang
APTM10TDUM19PG
Microsemi Corporation

APTM10TDUM19PG

bahagian bahagian: 2820

Jenis FET: 6 N-Channel (3-Phase Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 70A, Rds On (Maks) @ Id, Vgs: 21 mOhm @ 35A, 10V, Vgs (th) (Maks) @ Id: 4V @ 1mA,

Bersenang-senang
APTM10TDUM09PG
Microsemi Corporation

APTM10TDUM09PG

bahagian bahagian: 2746

Jenis FET: 6 N-Channel (3-Phase Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 139A, Rds On (Maks) @ Id, Vgs: 10 mOhm @ 69.5A, 10V, Vgs (th) (Maks) @ Id: 4V @ 2.5mA,

Bersenang-senang
APTM10HM09FTG
Microsemi Corporation

APTM10HM09FTG

bahagian bahagian: 2809

Jenis FET: 4 N-Channel (H-Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 139A, Rds On (Maks) @ Id, Vgs: 10 mOhm @ 69.5A, 10V, Vgs (th) (Maks) @ Id: 4V @ 2.5mA,

Bersenang-senang