Transistor - FET, MOSFET - Susunan | Produk Semikonduktor Diskrit | 100

APTM10DUM05TG

bahagian bahagian: 2783

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 278A, Rds On (Maks) @ Id, Vgs: 5 mOhm @ 125A, 10V, Vgs (th) (Maks) @ Id: 4V @ 5mA,

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Microsemi Corporation

APTM10DHM09TG

bahagian bahagian: 2789

Jenis FET: 2 N-Channel (Dual) Asymmetrical, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 139A, Rds On (Maks) @ Id, Vgs: 10 mOhm @ 69.5A, 10V, Vgs (th) (Maks) @ Id: 4V @ 2.5mA,

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Microsemi Corporation

APTM10DDAM19T3G

bahagian bahagian: 2824

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 70A, Rds On (Maks) @ Id, Vgs: 21 mOhm @ 35A, 10V, Vgs (th) (Maks) @ Id: 4V @ 1mA,

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Microsemi Corporation

APTM100TDU35PG

bahagian bahagian: 2796

Jenis FET: 6 N-Channel (3-Phase Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 1000V (1kV), Semasa - Saliran Berterusan (Id) @ 25 ° C: 22A, Rds On (Maks) @ Id, Vgs: 420 mOhm @ 11A, 10V, Vgs (th) (Maks) @ Id: 5V @ 2.5mA,

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Microsemi Corporation

APTM10DDAM09T3G

bahagian bahagian: 2768

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 139A, Rds On (Maks) @ Id, Vgs: 10 mOhm @ 69.5A, 10V, Vgs (th) (Maks) @ Id: 4V @ 2.5mA,

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Microsemi Corporation

APTM100DUM90G

bahagian bahagian: 2758

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 1000V (1kV), Semasa - Saliran Berterusan (Id) @ 25 ° C: 78A, Rds On (Maks) @ Id, Vgs: 105 mOhm @ 39A, 10V, Vgs (th) (Maks) @ Id: 5V @ 10mA,

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Microsemi Corporation

APTM100H80FT1G

bahagian bahagian: 2809

Jenis FET: 4 N-Channel (H-Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 1000V (1kV), Semasa - Saliran Berterusan (Id) @ 25 ° C: 11A, Rds On (Maks) @ Id, Vgs: 960 mOhm @ 9A, 10V, Vgs (th) (Maks) @ Id: 5V @ 1mA,

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Microsemi Corporation

APTM100DU18TG

bahagian bahagian: 2809

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 1000V (1kV), Semasa - Saliran Berterusan (Id) @ 25 ° C: 43A, Rds On (Maks) @ Id, Vgs: 210 mOhm @ 21.5A, 10V, Vgs (th) (Maks) @ Id: 5V @ 5mA,

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Microsemi Corporation

APTM100DDA35T3G

bahagian bahagian: 2731

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 1000V (1kV), Semasa - Saliran Berterusan (Id) @ 25 ° C: 22A, Rds On (Maks) @ Id, Vgs: 420 mOhm @ 11A, 10V, Vgs (th) (Maks) @ Id: 5V @ 2.5mA,

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Microsemi Corporation

APTM100A46FT1G

bahagian bahagian: 2813

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 1000V (1kV), Semasa - Saliran Berterusan (Id) @ 25 ° C: 19A, Rds On (Maks) @ Id, Vgs: 552 mOhm @ 16A, 10V, Vgs (th) (Maks) @ Id: 5V @ 2.5mA,

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Microsemi Corporation

APTM100A40FT1G

bahagian bahagian: 2805

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 1000V (1kV), Semasa - Saliran Berterusan (Id) @ 25 ° C: 21A, Rds On (Maks) @ Id, Vgs: 480 mOhm @ 18A, 10V, Vgs (th) (Maks) @ Id: 5V @ 2.5mA,

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Microsemi Corporation

APTM100A12STG

bahagian bahagian: 2822

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 1000V (1kV), Semasa - Saliran Berterusan (Id) @ 25 ° C: 68A, Rds On (Maks) @ Id, Vgs: 120 mOhm @ 34A, 10V, Vgs (th) (Maks) @ Id: 5V @ 10mA,

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Microsemi Corporation

APTM100A23SCTG

bahagian bahagian: 2760

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: Silicon Carbide (SiC), Saliran ke Voltan Sumber (Vdss): 1000V (1kV), Semasa - Saliran Berterusan (Id) @ 25 ° C: 36A, Rds On (Maks) @ Id, Vgs: 270 mOhm @ 18A, 10V, Vgs (th) (Maks) @ Id: 5V @ 5mA,

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Microsemi Corporation

APTM08TDUM04PG

bahagian bahagian: 2746

Jenis FET: 6 N-Channel (3-Phase Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 75V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 120A, Rds On (Maks) @ Id, Vgs: 4.5 mOhm @ 60A, 10V, Vgs (th) (Maks) @ Id: 4V @ 1mA,

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Microsemi Corporation

APTC80H29T1G

bahagian bahagian: 2742

Jenis FET: 4 N-Channel (H-Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 800V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 15A, Rds On (Maks) @ Id, Vgs: 290 mOhm @ 7.5A, 10V, Vgs (th) (Maks) @ Id: 3.9V @ 1mA,

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Microsemi Corporation

APTC80DSK29T3G

bahagian bahagian: 2793

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 800V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 15A, Rds On (Maks) @ Id, Vgs: 290 mOhm @ 7.5A, 10V, Vgs (th) (Maks) @ Id: 3.9V @ 1mA,

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Microsemi Corporation

APTC80H29SCTG

bahagian bahagian: 1092

Jenis FET: 4 N-Channel (H-Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 800V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 15A, Rds On (Maks) @ Id, Vgs: 290 mOhm @ 7.5A, 10V, Vgs (th) (Maks) @ Id: 3.9V @ 1mA,

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Microsemi Corporation

APTC80DDA29T3G

bahagian bahagian: 2788

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 800V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 15A, Rds On (Maks) @ Id, Vgs: 290 mOhm @ 7.5A, 10V, Vgs (th) (Maks) @ Id: 3.9V @ 1mA,

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Microsemi Corporation

APTC80A15T1G

bahagian bahagian: 2799

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 800V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 28A, Rds On (Maks) @ Id, Vgs: 150 mOhm @ 14A, 10V, Vgs (th) (Maks) @ Id: 3.9V @ 2mA,

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Microsemi Corporation

APTC80AM75SCG

bahagian bahagian: 594

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 800V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 56A, Rds On (Maks) @ Id, Vgs: 75 mOhm @ 28A, 10V, Vgs (th) (Maks) @ Id: 3.9V @ 4mA,

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Microsemi Corporation

APTC80A10SCTG

bahagian bahagian: 863

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 800V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 42A, Rds On (Maks) @ Id, Vgs: 100 mOhm @ 21A, 10V, Vgs (th) (Maks) @ Id: 3.9V @ 3mA,

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Microsemi Corporation

APTC60DSKM70T3G

bahagian bahagian: 2751

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 39A, Rds On (Maks) @ Id, Vgs: 70 mOhm @ 39A, 10V, Vgs (th) (Maks) @ Id: 3.9V @ 2.7mA,

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Microsemi Corporation

APTC60DSKM35T3G

bahagian bahagian: 2727

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 72A, Rds On (Maks) @ Id, Vgs: 35 mOhm @ 72A, 10V, Vgs (th) (Maks) @ Id: 3.9V @ 5.4mA,

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Microsemi Corporation

APTC60DDAM70T3G

bahagian bahagian: 2741

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 39A, Rds On (Maks) @ Id, Vgs: 70 mOhm @ 39A, 10V, Vgs (th) (Maks) @ Id: 3.9V @ 2.7mA,

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Microsemi Corporation

APTC60AM70T1G

bahagian bahagian: 2769

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 39A, Rds On (Maks) @ Id, Vgs: 70 mOhm @ 39A, 10V, Vgs (th) (Maks) @ Id: 3.9V @ 2.7mA,

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Alpha & Omega Semiconductor Inc.

AON5802A

bahagian bahagian: 2728

Jenis FET: 2 N-Channel (Dual) Common Drain, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7.2A, Rds On (Maks) @ Id, Vgs: 20 mOhm @ 7.2A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

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Alpha & Omega Semiconductor Inc.

AON3810

bahagian bahagian: 2760

Jenis FET: 2 N-Channel (Dual) Common Drain, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Rds On (Maks) @ Id, Vgs: 24 mOhm @ 7A, 10V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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Alpha & Omega Semiconductor Inc.

AON3806

bahagian bahagian: 2744

Jenis FET: 2 N-Channel (Dual) Common Drain, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A, Rds On (Maks) @ Id, Vgs: 26 mOhm @ 6.8A, 4.5V, Vgs (th) (Maks) @ Id: 1.1V @ 250µA,

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Alpha & Omega Semiconductor Inc.

AOD606

bahagian bahagian: 2755

Jenis FET: N and P-Channel, Common Drain, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8A, Rds On (Maks) @ Id, Vgs: 33 mOhm @ 8A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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Alpha & Omega Semiconductor Inc.

AO8803

bahagian bahagian: 2798

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 12V, Rds On (Maks) @ Id, Vgs: 18 mOhm @ 7A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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Alpha & Omega Semiconductor Inc.

AO7600

bahagian bahagian: 2769

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 900mA, 600mA, Rds On (Maks) @ Id, Vgs: 300 mOhm @ 900mA, 4.5V, Vgs (th) (Maks) @ Id: 900mV @ 250µA,

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Alpha & Omega Semiconductor Inc.

AO6804

bahagian bahagian: 2805

Jenis FET: 2 N-Channel (Dual) Common Drain, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4A, Rds On (Maks) @ Id, Vgs: 32 mOhm @ 5A, 4.5V, Vgs (th) (Maks) @ Id: 1.2V @ 250µA,

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Alpha & Omega Semiconductor Inc.

AO4932

bahagian bahagian: 2765

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 11A, 8A, Rds On (Maks) @ Id, Vgs: 12.5 mOhm @ 11A, 10V, Vgs (th) (Maks) @ Id: 2.1V @ 250µA,

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Alpha & Omega Semiconductor Inc.

AO4826

bahagian bahagian: 2775

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Rds On (Maks) @ Id, Vgs: 25 mOhm @ 6.3A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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Alpha & Omega Semiconductor Inc.

AOP610

bahagian bahagian: 2727

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Rds On (Maks) @ Id, Vgs: 24 mOhm @ 7.7A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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Alpha & Omega Semiconductor Inc.

AO4619

bahagian bahagian: 3310

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Rds On (Maks) @ Id, Vgs: 24 mOhm @ 7.4A, 10V, Vgs (th) (Maks) @ Id: 2.6V @ 250µA,

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