Transistor - FET, MOSFET - Susunan | Produk Semikonduktor Diskrit | 100

BSL315PL6327HTSA1

bahagian bahagian: 2825

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.5A, Rds On (Maks) @ Id, Vgs: 150 mOhm @ 1.5A, 10V, Vgs (th) (Maks) @ Id: 2V @ 11µA,

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Infineon Technologies

BSL215CL6327HTSA1

bahagian bahagian: 2784

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.5A, Rds On (Maks) @ Id, Vgs: 140 mOhm @ 1.5A, 4.5V, Vgs (th) (Maks) @ Id: 1.2V @ 3.7µA,

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Infineon Technologies

BSL215PL6327HTSA1

bahagian bahagian: 2866

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.5A, Rds On (Maks) @ Id, Vgs: 150 mOhm @ 1.5A, 4.5V, Vgs (th) (Maks) @ Id: 1.2V @ 11µA,

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Infineon Technologies

BSL205NL6327HTSA1

bahagian bahagian: 5353

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.5A, Rds On (Maks) @ Id, Vgs: 50 mOhm @ 2.5A, 4.5V, Vgs (th) (Maks) @ Id: 1.2V @ 11µA,

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Infineon Technologies

BSD235N L6327

bahagian bahagian: 3373

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 950mA, Rds On (Maks) @ Id, Vgs: 350 mOhm @ 950mA, 4.5V, Vgs (th) (Maks) @ Id: 1.2V @ 1.6µA,

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Infineon Technologies

BSL214NL6327HTSA1

bahagian bahagian: 2788

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.5A, Rds On (Maks) @ Id, Vgs: 140 mOhm @ 1.5A, 4.5V, Vgs (th) (Maks) @ Id: 1.2V @ 3.7µA,

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Infineon Technologies

BSL316CL6327HTSA1

bahagian bahagian: 2849

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.4A, 1.5A, Rds On (Maks) @ Id, Vgs: 160 mOhm @ 1.4A, 10V, Vgs (th) (Maks) @ Id: 2V @ 3.7µA,

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Infineon Technologies

BSD235C L6327

bahagian bahagian: 2795

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 950mA, 530mA, Rds On (Maks) @ Id, Vgs: 350 mOhm @ 950mA, 4.5V, Vgs (th) (Maks) @ Id: 1.2V @ 1.6µA,

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Infineon Technologies

BTS7904BATMA1

bahagian bahagian: 2849

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 55V, 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 40A, Rds On (Maks) @ Id, Vgs: 11.7 mOhm @ 20A, 10V, Vgs (th) (Maks) @ Id: 2.2V @ 40µA,

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Infineon Technologies

BSD223P L6327

bahagian bahagian: 2843

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 390mA, Rds On (Maks) @ Id, Vgs: 1.2 Ohm @ 390mA, 4.5V, Vgs (th) (Maks) @ Id: 1.2V @ 1.5µA,

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Infineon Technologies

BSO200N03

bahagian bahagian: 2769

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.6A, Rds On (Maks) @ Id, Vgs: 20 mOhm @ 7.9A, 10V, Vgs (th) (Maks) @ Id: 2V @ 13µA,

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Infineon Technologies

BSO350N03

bahagian bahagian: 2710

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5A, Rds On (Maks) @ Id, Vgs: 35 mOhm @ 6A, 10V, Vgs (th) (Maks) @ Id: 2V @ 6µA,

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Infineon Technologies

BSO150N03

bahagian bahagian: 2753

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7.6A, Rds On (Maks) @ Id, Vgs: 15 mOhm @ 9.1A, 10V, Vgs (th) (Maks) @ Id: 2V @ 25µA,

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Infineon Technologies

BSO303PNTMA1

bahagian bahagian: 2695

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8.2A, Rds On (Maks) @ Id, Vgs: 21 mOhm @ 8.2A, 10V, Vgs (th) (Maks) @ Id: 2V @ 100µA,

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Infineon Technologies

BSO615CT

bahagian bahagian: 2762

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.1A, 2A, Rds On (Maks) @ Id, Vgs: 110 mOhm @ 3.1A, 10V, Vgs (th) (Maks) @ Id: 2V @ 20µA,

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Infineon Technologies

BSO4804T

bahagian bahagian: 2714

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8A, Rds On (Maks) @ Id, Vgs: 20 mOhm @ 8A, 10V, Vgs (th) (Maks) @ Id: 2V @ 30µA,

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Infineon Technologies

BSO612CV

bahagian bahagian: 2724

Jenis FET: N and P-Channel, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3A, 2A, Rds On (Maks) @ Id, Vgs: 120 mOhm @ 3A, 10V, Vgs (th) (Maks) @ Id: 4V @ 20µA,

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Infineon Technologies

BSO615N

bahagian bahagian: 2704

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.6A, Rds On (Maks) @ Id, Vgs: 150 mOhm @ 2.6A, 4.5V, Vgs (th) (Maks) @ Id: 2V @ 20µA,

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Infineon Technologies

BSO215C

bahagian bahagian: 2649

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.7A, Rds On (Maks) @ Id, Vgs: 100 mOhm @ 3.7A, 10V, Vgs (th) (Maks) @ Id: 2V @ 10µA,

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Infineon Technologies

BSO4804

bahagian bahagian: 2708

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8A, Rds On (Maks) @ Id, Vgs: 20 mOhm @ 8A, 10V, Vgs (th) (Maks) @ Id: 2V @ 30µA,

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Infineon Technologies

BSO207PNTMA1

bahagian bahagian: 2681

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.7A, Rds On (Maks) @ Id, Vgs: 45 mOhm @ 5.7A, 4.5V, Vgs (th) (Maks) @ Id: 1.2V @ 40µA,

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Infineon Technologies

BSO203PNTMA1

bahagian bahagian: 2677

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8.2A, Rds On (Maks) @ Id, Vgs: 21 mOhm @ 8.2A, 4.5V, Vgs (th) (Maks) @ Id: 1.2V @ 100µA,

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Infineon Technologies

BSO204PNTMA1

bahagian bahagian: 2710

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7A, Rds On (Maks) @ Id, Vgs: 30 mOhm @ 7A, 4.5V, Vgs (th) (Maks) @ Id: 1.2V @ 60µA,

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Infineon Technologies

BSD223P

bahagian bahagian: 3281

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 390mA, Rds On (Maks) @ Id, Vgs: 1.2 Ohm @ 390mA, 4.5V, Vgs (th) (Maks) @ Id: 1.2V @ 1.5µA,

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Infineon Technologies

BSD235NH6327XTSA1

bahagian bahagian: 196176

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 950mA, Rds On (Maks) @ Id, Vgs: 350 mOhm @ 950mA, 4.5V, Vgs (th) (Maks) @ Id: 1.2V @ 1.6µA,

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Infineon Technologies

BSO211PNTMA1

bahagian bahagian: 2608

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.7A, Rds On (Maks) @ Id, Vgs: 67 mOhm @ 4.7A, 4.5V, Vgs (th) (Maks) @ Id: 1.2V @ 25µA,

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Infineon Technologies

BSO220N03MDGXUMA1

bahagian bahagian: 21576

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A, Rds On (Maks) @ Id, Vgs: 22 mOhm @ 7.7A, 10V, Vgs (th) (Maks) @ Id: 2.1V @ 250µA,

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Infineon Technologies

BSC150N03LDGATMA1

bahagian bahagian: 32315

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8A, Rds On (Maks) @ Id, Vgs: 15 mOhm @ 20A, 10V, Vgs (th) (Maks) @ Id: 2.2V @ 250µA,

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Infineon Technologies

BSO150N03MDGXUMA1

bahagian bahagian: 53402

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8A, Rds On (Maks) @ Id, Vgs: 15 mOhm @ 9.3A, 10V, Vgs (th) (Maks) @ Id: 2V @ 250µA,

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Infineon Technologies

BSG0810NDIATMA1

bahagian bahagian: 66407

Jenis FET: 2 N-Channel (Dual) Asymmetrical, Ciri FET: Logic Level Gate, 4.5V Drive, Saliran ke Voltan Sumber (Vdss): 25V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 19A, 39A, Rds On (Maks) @ Id, Vgs: 3 mOhm @ 20A, 10V, Vgs (th) (Maks) @ Id: 2V @ 250µA,

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Infineon Technologies

BSG0811NDATMA1

bahagian bahagian: 73789

Jenis FET: 2 N-Channel (Dual) Asymmetrical, Ciri FET: Logic Level Gate, 4.5V Drive, Saliran ke Voltan Sumber (Vdss): 25V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 19A, 41A, Rds On (Maks) @ Id, Vgs: 3 mOhm @ 20A, 10V, Vgs (th) (Maks) @ Id: 2V @ 250µA,

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Infineon Technologies

BSG0813NDIATMA1

bahagian bahagian: 73114

Jenis FET: 2 N-Channel (Dual) Asymmetrical, Ciri FET: Logic Level Gate, 4.5V Drive, Saliran ke Voltan Sumber (Vdss): 25V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 19A, 33A, Rds On (Maks) @ Id, Vgs: 3 mOhm @ 20A, 10V, Vgs (th) (Maks) @ Id: 2V @ 250µA,

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Diodes Incorporated

BSS8402DW-7

bahagian bahagian: 2712

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, 50V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 115mA, 130mA, Rds On (Maks) @ Id, Vgs: 7.5 Ohm @ 50mA, 5V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

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Diodes Incorporated

BSS84DW-7

bahagian bahagian: 2665

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 50V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 130mA, Rds On (Maks) @ Id, Vgs: 10 Ohm @ 100mA, 5V, Vgs (th) (Maks) @ Id: 2V @ 1mA,

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Diodes Incorporated

BSS138DW-7

bahagian bahagian: 2708

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 50V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 200mA, Rds On (Maks) @ Id, Vgs: 3.5 Ohm @ 220mA, 10V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

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Nexperia USA Inc.

BSS84AKV,115

bahagian bahagian: 198874

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 50V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 170mA, Rds On (Maks) @ Id, Vgs: 7.5 Ohm @ 100mA, 10V, Vgs (th) (Maks) @ Id: 2.1V @ 250µA,

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