Transistor - FET, MOSFET - Susunan

AOP607

bahagian bahagian: 3275

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Rds On (Maks) @ Id, Vgs: 56 mOhm @ 4.7A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

AOP609

bahagian bahagian: 2816

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Rds On (Maks) @ Id, Vgs: 60 mOhm @ 4.7A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

AOP605

bahagian bahagian: 2811

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Rds On (Maks) @ Id, Vgs: 28 mOhm @ 7.5A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

AO4838

bahagian bahagian: 114715

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 11A, Rds On (Maks) @ Id, Vgs: 9.6 mOhm @ 11A, 10V, Vgs (th) (Maks) @ Id: 2.6V @ 250µA,

AO4882

bahagian bahagian: 110285

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8A, Rds On (Maks) @ Id, Vgs: 19 mOhm @ 8A, 10V, Vgs (th) (Maks) @ Id: 2.4V @ 250µA,

AO4852

bahagian bahagian: 115960

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3A, Rds On (Maks) @ Id, Vgs: 90 mOhm @ 3A, 10V, Vgs (th) (Maks) @ Id: 2.6V @ 250µA,

AO4886

bahagian bahagian: 2683

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.3A, Rds On (Maks) @ Id, Vgs: 80 mOhm @ 3A, 10V, Vgs (th) (Maks) @ Id: 2.7V @ 250µA,

AON7611

bahagian bahagian: 168239

Jenis FET: N and P-Channel, Common Drain, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 9A, 18.5A, Rds On (Maks) @ Id, Vgs: 50 mOhm @ 4A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

AO4803A

bahagian bahagian: 134931

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5A, Rds On (Maks) @ Id, Vgs: 46 mOhm @ 5A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

AO4614B

bahagian bahagian: 146451

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A, 5A, Rds On (Maks) @ Id, Vgs: 30 mOhm @ 6A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

AO4813

bahagian bahagian: 174721

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7.1A, Rds On (Maks) @ Id, Vgs: 25 mOhm @ 7.1A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

AO4800B

bahagian bahagian: 189998

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.9A, Rds On (Maks) @ Id, Vgs: 27 mOhm @ 6.9A, 10V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

AO4805

bahagian bahagian: 180636

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 9A, Rds On (Maks) @ Id, Vgs: 19 mOhm @ 8A, 10V, Vgs (th) (Maks) @ Id: 2.8V @ 250µA,

AO4630

bahagian bahagian: 137477

Jenis FET: N and P-Channel Complementary, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5A, 7A, Rds On (Maks) @ Id, Vgs: 28 mOhm @ 7A, 10V, Vgs (th) (Maks) @ Id: 1.45V @ 250µA,

AO4612

bahagian bahagian: 189775

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.5A, 3.2A, Rds On (Maks) @ Id, Vgs: 56 mOhm @ 4.5A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

AO4840

bahagian bahagian: 161636

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A, Rds On (Maks) @ Id, Vgs: 30 mOhm @ 6A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

AON6924

bahagian bahagian: 90862

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 15A, 28A, Rds On (Maks) @ Id, Vgs: 5.2 mOhm @ 20A, 10V, Vgs (th) (Maks) @ Id: 2.3V @ 250µA,

AOD609

bahagian bahagian: 192201

Jenis FET: N and P-Channel, Common Drain, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 12A, Rds On (Maks) @ Id, Vgs: 30 mOhm @ 12A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

AOC2804

bahagian bahagian: 105804

Jenis FET: 2 N-Channel (Dual) Common Drain, Ciri FET: Standard,

AON7804

bahagian bahagian: 120975

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 9A, Rds On (Maks) @ Id, Vgs: 21 mOhm @ 8A, 10V, Vgs (th) (Maks) @ Id: 2.4V @ 250µA,

AAT7347IAS-T1

bahagian bahagian: 157898

AUIRFN8459TR

bahagian bahagian: 64112

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 50A, Rds On (Maks) @ Id, Vgs: 5.9 mOhm @ 40A, 10V, Vgs (th) (Maks) @ Id: 3.9V @ 50µA,

AUIRFN8458TR

bahagian bahagian: 79588

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 43A (Tc), Rds On (Maks) @ Id, Vgs: 10 mOhm @ 26A, 10V, Vgs (th) (Maks) @ Id: 3.9V @ 25µA,

AUIRF7341QTR

bahagian bahagian: 89718

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 55V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.1A, Rds On (Maks) @ Id, Vgs: 50 mOhm @ 5.1A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

AUIRF7319QTR

bahagian bahagian: 89679

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.5A, 4.9A, Rds On (Maks) @ Id, Vgs: 29 mOhm @ 5.8A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

AUIRF7316QTR

bahagian bahagian: 89739

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Rds On (Maks) @ Id, Vgs: 58 mOhm @ 4.9A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

AUIRF7342QTR

bahagian bahagian: 91383

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 55V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.4A, Rds On (Maks) @ Id, Vgs: 105 mOhm @ 3.4A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

AUIRF7313QTR

bahagian bahagian: 94924

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.9A, Rds On (Maks) @ Id, Vgs: 29 mOhm @ 6.9A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

AUIRF7304QTR

bahagian bahagian: 101244

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.3A, Rds On (Maks) @ Id, Vgs: 90 mOhm @ 2.2A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

AUIRF7379QTR

bahagian bahagian: 101249

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.8A, 4.3A, Rds On (Maks) @ Id, Vgs: 45 mOhm @ 5.8A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

AUIRF7103QTR

bahagian bahagian: 121994

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 50V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3A, Rds On (Maks) @ Id, Vgs: 130 mOhm @ 3A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

AUIRF9952QTR

bahagian bahagian: 125213

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.5A, 2.3A, Rds On (Maks) @ Id, Vgs: 100 mOhm @ 2.2A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

BSM180D12P3C007

bahagian bahagian: 168

Jenis FET: 2 N-Channel (Dual), Ciri FET: Silicon Carbide (SiC), Saliran ke Voltan Sumber (Vdss): 1200V (1.2kV), Semasa - Saliran Berterusan (Id) @ 25 ° C: 180A (Tc), Vgs (th) (Maks) @ Id: 5.6V @ 50mA,

BSM300D12P2E001

bahagian bahagian: 201

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: Silicon Carbide (SiC), Saliran ke Voltan Sumber (Vdss): 1200V (1.2kV), Semasa - Saliran Berterusan (Id) @ 25 ° C: 300A (Tc), Vgs (th) (Maks) @ Id: 4V @ 68mA,

BSM080D12P2C008

bahagian bahagian: 263

Jenis FET: 2 N-Channel (Dual), Ciri FET: Silicon Carbide (SiC), Saliran ke Voltan Sumber (Vdss): 1200V (1.2kV), Semasa - Saliran Berterusan (Id) @ 25 ° C: 80A (Tc), Vgs (th) (Maks) @ Id: 4V @ 13.2mA,

BSS8402DWQ-7

bahagian bahagian: 194681

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, 50V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 115mA, 130mA, Rds On (Maks) @ Id, Vgs: 13.5 Ohm @ 500mA, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,