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Transistor - FET, MOSFET - Susunan

CMLDM3737 TR
Central Semiconductor Corp

CMLDM3737 TR

bahagian bahagian: 117843

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 540mA, Rds On (Maks) @ Id, Vgs: 550 mOhm @ 540mA, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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CMLDM7585 TR
Central Semiconductor Corp

CMLDM7585 TR

bahagian bahagian: 161601

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 650mA, Rds On (Maks) @ Id, Vgs: 230 mOhm @ 600mA, 4.5V, Vgs (th) (Maks) @ Id: 1.1V @ 250µA,

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CMXDM7002A TR
Central Semiconductor Corp

CMXDM7002A TR

bahagian bahagian: 126593

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 280mA, Rds On (Maks) @ Id, Vgs: 2 Ohm @ 500mA, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

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DMC2450UV-13
Diodes Incorporated

DMC2450UV-13

bahagian bahagian: 171377

Jenis FET: N and P-Channel, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.03A, 700mA, Rds On (Maks) @ Id, Vgs: 480 mOhm @ 200mA, 5V, Vgs (th) (Maks) @ Id: 900mV @ 250µA,

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DMTH6010LPDQ-13
Diodes Incorporated

DMTH6010LPDQ-13

bahagian bahagian: 125205

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 13.1A (Ta), 47.6A (Tc), Rds On (Maks) @ Id, Vgs: 11 mOhm @ 20A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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DMP2066LSD-13
Diodes Incorporated

DMP2066LSD-13

bahagian bahagian: 103006

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.8A, Rds On (Maks) @ Id, Vgs: 40 mOhm @ 4.6A, 4.5V, Vgs (th) (Maks) @ Id: 1.2V @ 250µA,

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DMP2004DWK-7
Diodes Incorporated

DMP2004DWK-7

bahagian bahagian: 187523

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 430mA, Rds On (Maks) @ Id, Vgs: 900 mOhm @ 430mA, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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NVJD4401NT1G
ON Semiconductor

NVJD4401NT1G

bahagian bahagian: 192220

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 630mA, Rds On (Maks) @ Id, Vgs: 375 mOhm @ 630mA, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

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NVMFD5877NLT1G
ON Semiconductor

NVMFD5877NLT1G

bahagian bahagian: 171488

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A, Rds On (Maks) @ Id, Vgs: 39 mOhm @ 7.5A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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NTZD5110NT5G
ON Semiconductor

NTZD5110NT5G

bahagian bahagian: 3000

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 294mA, Rds On (Maks) @ Id, Vgs: 1.6 Ohm @ 500mA, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

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FDR8702H
ON Semiconductor

FDR8702H

bahagian bahagian: 3117

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.6A, 2.6A, Rds On (Maks) @ Id, Vgs: 38 mOhm @ 3.6A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

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NTLLD4901NFTWG
ON Semiconductor

NTLLD4901NFTWG

bahagian bahagian: 132118

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.5A, 6.3A, Rds On (Maks) @ Id, Vgs: 17.4 mOhm @ 9A, 10V, Vgs (th) (Maks) @ Id: 2.2V @ 250µA,

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FDC6333C
ON Semiconductor

FDC6333C

bahagian bahagian: 131502

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.5A, 2A, Rds On (Maks) @ Id, Vgs: 95 mOhm @ 2.5A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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FDMA3023PZ
ON Semiconductor

FDMA3023PZ

bahagian bahagian: 148246

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.9A, Rds On (Maks) @ Id, Vgs: 90 mOhm @ 2.9A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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FDZ1323NZ
ON Semiconductor

FDZ1323NZ

bahagian bahagian: 166913

Jenis FET: 2 N-Channel (Dual) Common Drain, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 10A, Rds On (Maks) @ Id, Vgs: 13 mOhm @ 1A, 4.5V, Vgs (th) (Maks) @ Id: 1.2V @ 250µA,

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NTMFD4C20NT1G
ON Semiconductor

NTMFD4C20NT1G

bahagian bahagian: 166740

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 9.1A, 13.7A, Rds On (Maks) @ Id, Vgs: 7.3 mOhm @ 10A, 10V, Vgs (th) (Maks) @ Id: 2.1V @ 250µA,

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FDPC5018SG
ON Semiconductor

FDPC5018SG

bahagian bahagian: 62456

Jenis FET: 2 N-Channel (Dual) Asymmetrical, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 17A, 32A, Rds On (Maks) @ Id, Vgs: 5 mOhm @ 17A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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SI9936DY,518
NXP USA Inc.

SI9936DY,518

bahagian bahagian: 3387

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5A, Rds On (Maks) @ Id, Vgs: 50 mOhm @ 5A, 10V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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CAS300M17BM2
Cree/Wolfspeed

CAS300M17BM2

bahagian bahagian: 115

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: Silicon Carbide (SiC), Saliran ke Voltan Sumber (Vdss): 1700V (1.7kV), Semasa - Saliran Berterusan (Id) @ 25 ° C: 325A (Tc), Rds On (Maks) @ Id, Vgs: 10 mOhm @ 225A, 20V, Vgs (th) (Maks) @ Id: 2.3V @ 15mA (Typ),

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UT6JA2TCR
Rohm Semiconductor

UT6JA2TCR

bahagian bahagian: 157843

Jenis FET: 2 P-Channel (Dual), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4A, Rds On (Maks) @ Id, Vgs: 70 mOhm @ 4A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 1mA,

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SH8J65TB1
Rohm Semiconductor

SH8J65TB1

bahagian bahagian: 100136

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7A, Rds On (Maks) @ Id, Vgs: 29 mOhm @ 7A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 1mA,

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UM6K33NTN
Rohm Semiconductor

UM6K33NTN

bahagian bahagian: 191317

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, 1.2V Drive, Saliran ke Voltan Sumber (Vdss): 50V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 200mA, Rds On (Maks) @ Id, Vgs: 2.2 Ohm @ 200mA, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 1mA,

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SMA5117
Sanken

SMA5117

bahagian bahagian: 6110

Jenis FET: 6 N-Channel (3-Phase Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 250V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7A, Rds On (Maks) @ Id, Vgs: 250 mOhm @ 3.5A, 10V, Vgs (th) (Maks) @ Id: 4V @ 1mA,

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SLA5068-LF830
Sanken

SLA5068-LF830

bahagian bahagian: 11177

Jenis FET: 6 N-Channel (3-Phase Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7A, Rds On (Maks) @ Id, Vgs: 100 mOhm @ 3.5A, 10V, Vgs (th) (Maks) @ Id: 2V @ 250µA,

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TSM4946DCS RLG
Taiwan Semiconductor Corporation

TSM4946DCS RLG

bahagian bahagian: 16502

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.5A (Ta), Rds On (Maks) @ Id, Vgs: 55 mOhm @ 4.5A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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SSM6P35FE,LM
Toshiba Semiconductor and Storage

SSM6P35FE,LM

bahagian bahagian: 173905

Jenis FET: 2 P-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 100mA, Rds On (Maks) @ Id, Vgs: 8 Ohm @ 50mA, 4V, Vgs (th) (Maks) @ Id: 1V @ 1mA,

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SSM6P15FE(TE85L,F)
Toshiba Semiconductor and Storage

SSM6P15FE(TE85L,F)

bahagian bahagian: 13232

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 100mA, Rds On (Maks) @ Id, Vgs: 12 Ohm @ 10mA, 4V, Vgs (th) (Maks) @ Id: 1.7V @ 100µA,

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STS4DNF60L
STMicroelectronics

STS4DNF60L

bahagian bahagian: 93425

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4A, Rds On (Maks) @ Id, Vgs: 55 mOhm @ 2A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

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MCCD2007-TP
Micro Commercial Co

MCCD2007-TP

bahagian bahagian: 117884

Jenis FET: 2 N-Channel (Dual) Common Drain, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7A, Rds On (Maks) @ Id, Vgs: 20 mOhm @ 7A, 10V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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SI4618DY-T1-E3
Vishay Siliconix

SI4618DY-T1-E3

bahagian bahagian: 113583

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8A, 15.2A, Rds On (Maks) @ Id, Vgs: 17 mOhm @ 8A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 1mA,

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SI7901EDN-T1-E3
Vishay Siliconix

SI7901EDN-T1-E3

bahagian bahagian: 3002

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.3A, Rds On (Maks) @ Id, Vgs: 48 mOhm @ 6.3A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 800µA,

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CSD75301W1015
Texas Instruments

CSD75301W1015

bahagian bahagian: 2951

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.2A, Rds On (Maks) @ Id, Vgs: 100 mOhm @ 1A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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IRF7380TRPBF
Infineon Technologies

IRF7380TRPBF

bahagian bahagian: 159831

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 80V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.6A, Rds On (Maks) @ Id, Vgs: 73 mOhm @ 2.2A, 10V, Vgs (th) (Maks) @ Id: 4V @ 250µA,

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IRF9956PBF
Infineon Technologies

IRF9956PBF

bahagian bahagian: 2963

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.5A, Rds On (Maks) @ Id, Vgs: 100 mOhm @ 2.2A, 10V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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DF23MR12W1M1B11BOMA1
Infineon Technologies

DF23MR12W1M1B11BOMA1

bahagian bahagian: 3162

Jenis FET: 2 N-Channel (Dual), Ciri FET: Silicon Carbide (SiC), Saliran ke Voltan Sumber (Vdss): 1200V (1.2kV), Semasa - Saliran Berterusan (Id) @ 25 ° C: 25A, Rds On (Maks) @ Id, Vgs: 45 mOhm @ 25A, 15V, Vgs (th) (Maks) @ Id: 5.5V @ 10mA,

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FMM22-06PF
IXYS

FMM22-06PF

bahagian bahagian: 4230

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 12A, Rds On (Maks) @ Id, Vgs: 350 mOhm @ 11A, 10V, Vgs (th) (Maks) @ Id: 5V @ 1mA,

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