Transistor - FET, MOSFET - Susunan | Produk Semikonduktor Diskrit | 100

SI5933DC-T1-GE3

bahagian bahagian: 2867

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.7A, Rds On (Maks) @ Id, Vgs: 110 mOhm @ 2.7A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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Vishay Siliconix

SI4563DY-T1-E3

bahagian bahagian: 2704

Jenis FET: N and P-Channel, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8A, Rds On (Maks) @ Id, Vgs: 16 mOhm @ 5A, 10V, Vgs (th) (Maks) @ Id: 2V @ 250µA,

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Vishay Siliconix

SI6969BDQ-T1-E3

bahagian bahagian: 2784

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4A, Rds On (Maks) @ Id, Vgs: 30 mOhm @ 4.6A, 4.5V, Vgs (th) (Maks) @ Id: 800mV @ 250µA,

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Vishay Siliconix

VQ1006P-E3

bahagian bahagian: 2906

Jenis FET: 4 N-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 90V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 400mA, Rds On (Maks) @ Id, Vgs: 4.5 Ohm @ 1A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 1mA,

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Vishay Siliconix

SI4942DY-T1-E3

bahagian bahagian: 2870

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.3A, Rds On (Maks) @ Id, Vgs: 21 mOhm @ 7.4A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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Vishay Siliconix

SI4940DY-T1-GE3

bahagian bahagian: 2808

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.2A, Rds On (Maks) @ Id, Vgs: 36 mOhm @ 5.7A, 10V, Vgs (th) (Maks) @ Id: 1V @ 250µA (Min),

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Vishay Siliconix

SI4816DY-T1-E3

bahagian bahagian: 2905

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.3A, 7.7A, Rds On (Maks) @ Id, Vgs: 22 mOhm @ 6.3A, 10V, Vgs (th) (Maks) @ Id: 2V @ 250µA,

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Vishay Siliconix

SI5509DC-T1-E3

bahagian bahagian: 2749

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.1A, 4.8A, Rds On (Maks) @ Id, Vgs: 52 mOhm @ 5A, 4.5V, Vgs (th) (Maks) @ Id: 2V @ 250µA,

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Vishay Siliconix

SI4914BDY-T1-GE3

bahagian bahagian: 118908

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8.4A, 8A, Rds On (Maks) @ Id, Vgs: 21 mOhm @ 8A, 10V, Vgs (th) (Maks) @ Id: 2.7V @ 250µA,

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Vishay Siliconix

SI4967DY-T1-E3

bahagian bahagian: 2883

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 12V, Rds On (Maks) @ Id, Vgs: 23 mOhm @ 7.5A, 4.5V, Vgs (th) (Maks) @ Id: 450mV @ 250µA (Min),

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Vishay Siliconix

SI4940DY-T1-E3

bahagian bahagian: 2875

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.2A, Rds On (Maks) @ Id, Vgs: 36 mOhm @ 5.7A, 10V, Vgs (th) (Maks) @ Id: 1V @ 250µA (Min),

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Vishay Siliconix

SI3529DV-T1-GE3

bahagian bahagian: 2831

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.5A, 1.95A, Rds On (Maks) @ Id, Vgs: 125 mOhm @ 2.2A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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ON Semiconductor

FDMC8200S_F106

bahagian bahagian: 3352

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A, 8.5A, Rds On (Maks) @ Id, Vgs: 20 mOhm @ 6A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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ON Semiconductor

FW812-TL-E

bahagian bahagian: 2832

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 35V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 10A, Rds On (Maks) @ Id, Vgs: 17 mOhm @ 10A, 10V, Vgs (th) (Maks) @ Id: 2.6V @ 1mA,

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ON Semiconductor

NTLUD3191PZTBG

bahagian bahagian: 2826

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.1A, Rds On (Maks) @ Id, Vgs: 250 mOhm @ 1.5A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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ON Semiconductor

FDS8962C

bahagian bahagian: 2774

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7A, 5A, Rds On (Maks) @ Id, Vgs: 30 mOhm @ 7A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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ON Semiconductor

NTMC1300R2

bahagian bahagian: 3306

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.2A, 1.8A, Rds On (Maks) @ Id, Vgs: 90 mOhm @ 3A, 10V, Vgs (th) (Maks) @ Id: 2.2V @ 250µA,

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ON Semiconductor

FDW9926NZ

bahagian bahagian: 2770

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.5A, Rds On (Maks) @ Id, Vgs: 32 mOhm @ 4.5A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

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ON Semiconductor

FDR8308P

bahagian bahagian: 2748

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.2A, Rds On (Maks) @ Id, Vgs: 50 mOhm @ 3.2A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

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ON Semiconductor

EMH2407-TL-H

bahagian bahagian: 165186

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A, Rds On (Maks) @ Id, Vgs: 25 mOhm @ 3A, 4.5V,

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Diodes Incorporated

ZXMD65P03N8TA

bahagian bahagian: 2983

Jenis FET: 2 P-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.8A, Rds On (Maks) @ Id, Vgs: 55 mOhm @ 4.9A, 10V, Vgs (th) (Maks) @ Id: 1V @ 250µA (Min),

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Diodes Incorporated

ZXMD63P03XTC

bahagian bahagian: 2768

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Rds On (Maks) @ Id, Vgs: 185 mOhm @ 1.2A, 10V, Vgs (th) (Maks) @ Id: 1V @ 250µA (Min),

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Diodes Incorporated

ZXMN10A08DN8TC

bahagian bahagian: 2701

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.6A, Rds On (Maks) @ Id, Vgs: 250 mOhm @ 3.2A, 10V, Vgs (th) (Maks) @ Id: 2V @ 250µA (Min),

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Infineon Technologies

IRF7350PBF

bahagian bahagian: 2677

Jenis FET: N and P-Channel, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.1A, 1.5A, Rds On (Maks) @ Id, Vgs: 210 mOhm @ 2.1A, 10V, Vgs (th) (Maks) @ Id: 4V @ 250µA,

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Infineon Technologies

IRF7317PBF

bahagian bahagian: 75561

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.6A, 5.3A, Rds On (Maks) @ Id, Vgs: 29 mOhm @ 6A, 4.5V, Vgs (th) (Maks) @ Id: 700mV @ 250µA,

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Infineon Technologies

IRF7338PBF

bahagian bahagian: 2697

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.3A, 3A, Rds On (Maks) @ Id, Vgs: 34 mOhm @ 6A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

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Toshiba Semiconductor and Storage

TPCP8203(TE85L,F)

bahagian bahagian: 2780

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.7A, Vgs (th) (Maks) @ Id: 2.5V @ 1mA,

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Toshiba Semiconductor and Storage

SSM6N7002BFE(T5L,F

bahagian bahagian: 2844

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 200mA, Rds On (Maks) @ Id, Vgs: 2.1 Ohm @ 500mA, 10V, Vgs (th) (Maks) @ Id: 3.1V @ 250µA,

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Rohm Semiconductor

MP6M11TCR

bahagian bahagian: 2920

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.5A, Rds On (Maks) @ Id, Vgs: 98 mOhm @ 3.5A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 1mA,

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Rohm Semiconductor

MP6K14TCR

bahagian bahagian: 2899

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8A, Rds On (Maks) @ Id, Vgs: 25 mOhm @ 8A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 1mA,

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Rohm Semiconductor

SP8M51TB1

bahagian bahagian: 2655

Jenis FET: N and P-Channel, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3A, 2.5A,

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Texas Instruments

CSD75208W1015T

bahagian bahagian: 192795

Jenis FET: 2 P-Channel (Dual) Common Source, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.6A, Rds On (Maks) @ Id, Vgs: 68 mOhm @ 1A, 4.5V, Vgs (th) (Maks) @ Id: 1.1V @ 250µA,

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STMicroelectronics

STS1DN45K3

bahagian bahagian: 2689

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 450V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 500mA, Rds On (Maks) @ Id, Vgs: 3.8 Ohm @ 500mA, 10V, Vgs (th) (Maks) @ Id: 4.5V @ 50µA,

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EPC

EPC2103

bahagian bahagian: 23026

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: GaNFET (Gallium Nitride), Saliran ke Voltan Sumber (Vdss): 80V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 28A, Rds On (Maks) @ Id, Vgs: 5.5 mOhm @ 20A, 5V, Vgs (th) (Maks) @ Id: 2.5V @ 7mA,

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EPC

EPC2105

bahagian bahagian: 24303

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: GaNFET (Gallium Nitride), Saliran ke Voltan Sumber (Vdss): 80V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 9.5A, 38A, Rds On (Maks) @ Id, Vgs: 14.5 mOhm @ 20A, 5V, 3.4 mOhm @ 20A, 5V, Vgs (th) (Maks) @ Id: 2.5V @ 2.5mA, 2.5V @ 10mA,

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IXYS

GWM120-0075X1-SMDSAM

bahagian bahagian: 2788

Jenis FET: 6 N-Channel (3-Phase Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 75V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 110A, Rds On (Maks) @ Id, Vgs: 4.9 mOhm @ 60A, 10V, Vgs (th) (Maks) @ Id: 4V @ 1mA,

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