Transistor - FET, MOSFET - Susunan

SIZF906DT-T1-GE3

bahagian bahagian: 98746

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 60A (Tc), Rds On (Maks) @ Id, Vgs: 3.8 mOhm @ 15A, 10V, 1.17 mOhm @ 20A, 10V, Vgs (th) (Maks) @ Id: 2.2V @ 250µA,

SI4963BDY-T1-GE3

bahagian bahagian: 89691

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.9A, Rds On (Maks) @ Id, Vgs: 32 mOhm @ 6.5A, 4.5V, Vgs (th) (Maks) @ Id: 1.4V @ 250µA,

SI5517DU-T1-GE3

bahagian bahagian: 139934

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A, Rds On (Maks) @ Id, Vgs: 39 mOhm @ 4.4A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

SI4804CDY-T1-GE3

bahagian bahagian: 85201

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8A, Rds On (Maks) @ Id, Vgs: 22 mOhm @ 7.5A, 10V, Vgs (th) (Maks) @ Id: 2.4V @ 250µA,

SI5515DC-T1-GE3

bahagian bahagian: 153475

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.4A, 3A, Rds On (Maks) @ Id, Vgs: 40 mOhm @ 4.4A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

SQ1902AEL-T1_GE3

bahagian bahagian: 9906

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 780mA (Tc), Rds On (Maks) @ Id, Vgs: 415 mOhm @ 660mA, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

SI4204DY-T1-GE3

bahagian bahagian: 80891

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 19.8A, Rds On (Maks) @ Id, Vgs: 4.6 mOhm @ 10A, 10V, Vgs (th) (Maks) @ Id: 2.4V @ 250µA,

CSD86311W1723

bahagian bahagian: 155741

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 25V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.5A, Rds On (Maks) @ Id, Vgs: 39 mOhm @ 2A, 8V, Vgs (th) (Maks) @ Id: 1.4V @ 250µA,

CSD86356Q5D

bahagian bahagian: 10781

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: Logic Level Gate, 5V Drive, Saliran ke Voltan Sumber (Vdss): 25V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 40A (Ta), Rds On (Maks) @ Id, Vgs: 4.5 mOhm @ 20A, 5V, 0.8 mOhm @ 20A, 5V, Vgs (th) (Maks) @ Id: 1.85V @ 250µA, 1.5V @ 250µA,

CMLDM3757 TR

bahagian bahagian: 173409

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 540mA, 430mA, Rds On (Maks) @ Id, Vgs: 550 mOhm @ 540mA, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

IRFI4019HG-117P

bahagian bahagian: 3354

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 150V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8.7A, Rds On (Maks) @ Id, Vgs: 95 mOhm @ 5.2A, 10V, Vgs (th) (Maks) @ Id: 4.9V @ 50µA,

DMN4034SSD-13

bahagian bahagian: 104438

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.8A, Rds On (Maks) @ Id, Vgs: 34 mOhm @ 6A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

DMPH6050SSDQ-13

bahagian bahagian: 176283

Jenis FET: 2 P-Channel (Dual), Ciri FET: Standard, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.2A (Ta), Rds On (Maks) @ Id, Vgs: 48 mOhm @ 5A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

DMC4040SSDQ-13

bahagian bahagian: 191341

Jenis FET: N and P-Channel Complementary, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7.5A (Ta), Rds On (Maks) @ Id, Vgs: 25 mOhm @ 3A, 10V, Vgs (th) (Maks) @ Id: 1.8V @ 250µA,

DMP3056LSDQ-13

bahagian bahagian: 10772

Jenis FET: 2 P-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.9A (Ta), Rds On (Maks) @ Id, Vgs: 45 mOhm @ 6A, 10V, Vgs (th) (Maks) @ Id: 2.1V @ 250µA,

DMC1229UFDB-7

bahagian bahagian: 185667

Jenis FET: N and P-Channel, Saliran ke Voltan Sumber (Vdss): 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.6A, 3.8A, Rds On (Maks) @ Id, Vgs: 29 mOhm @ 5A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

DMN2215UDM-7

bahagian bahagian: 186022

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2A, Rds On (Maks) @ Id, Vgs: 100 mOhm @ 2.5A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

DMG1016UDW-7

bahagian bahagian: 177152

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.07A, 845mA, Rds On (Maks) @ Id, Vgs: 450 mOhm @ 600mA, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

DMT3020LFDB-13

bahagian bahagian: 176284

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7.7A (Ta), Rds On (Maks) @ Id, Vgs: 20 mOhm @ 9A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

DMG8822UTS-13

bahagian bahagian: 155822

Jenis FET: 2 N-Channel (Dual) Common Drain, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.9A (Ta), Rds On (Maks) @ Id, Vgs: 25 mOhm @ 8.2A, 4.5V, Vgs (th) (Maks) @ Id: 900mV @ 250µA,

FDMB2307NZ

bahagian bahagian: 191134

Jenis FET: 2 N-Channel (Dual) Common Drain, Ciri FET: Logic Level Gate,

FDPC8016S

bahagian bahagian: 69237

Jenis FET: 2 N-Channel (Dual) Asymmetrical, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 25V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 20A, 35A, Rds On (Maks) @ Id, Vgs: 3.8 mOhm @ 20A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

NVMFD5C672NLWFT1G

bahagian bahagian: 6532

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 12A (Ta), 49A (Tc), Rds On (Maks) @ Id, Vgs: 11.9 mOhm @ 10A, 10V, Vgs (th) (Maks) @ Id: 2.2V @ 30µA,

EMH2604-TL-H

bahagian bahagian: 118126

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4A, 3A, Rds On (Maks) @ Id, Vgs: 45 mOhm @ 4A, 4.5V,

FDME1023PZT

bahagian bahagian: 114825

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.6A, Rds On (Maks) @ Id, Vgs: 142 mOhm @ 2.3A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

FDMA1027P

bahagian bahagian: 148465

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3A, Rds On (Maks) @ Id, Vgs: 120 mOhm @ 3A, 4.5V, Vgs (th) (Maks) @ Id: 1.3V @ 250µA,

FC4B22270L1

bahagian bahagian: 167168

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Vgs (th) (Maks) @ Id: 1.4V @ 310µA,

TPD3215M

bahagian bahagian: 455

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: GaNFET (Gallium Nitride), Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 70A (Tc), Rds On (Maks) @ Id, Vgs: 34 mOhm @ 30A, 8V,

SSM6N61NU,LF

bahagian bahagian: 117701

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, 1.5V Drive, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4A, Rds On (Maks) @ Id, Vgs: 33 mOhm @ 4A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 1mA,

NX3008CBKV,115

bahagian bahagian: 142413

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 400mA, 220mA, Rds On (Maks) @ Id, Vgs: 1.4 Ohm @ 350mA, 4.5V, Vgs (th) (Maks) @ Id: 1.1V @ 250µA,

GWM100-01X1-SMDSAM

bahagian bahagian: 2800

Jenis FET: 6 N-Channel (3-Phase Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 90A, Rds On (Maks) @ Id, Vgs: 8.5 mOhm @ 80A, 10V, Vgs (th) (Maks) @ Id: 4.5V @ 250µA,

GMM3X180-004X2-SMDSAM

bahagian bahagian: 3145

Jenis FET: 6 N-Channel (3-Phase Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 180A, Vgs (th) (Maks) @ Id: 4.5V @ 1mA,

MCB40P1200LB

bahagian bahagian: 230

Jenis FET: 2 N-Channel (Dual) Common Source, Ciri FET: Silicon Carbide (SiC), Saliran ke Voltan Sumber (Vdss): 1200V (1.2kV), Semasa - Saliran Berterusan (Id) @ 25 ° C: 58A,

PMDPB760ENX

bahagian bahagian: 2945

QS6M4TR

bahagian bahagian: 185861

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.5A, Rds On (Maks) @ Id, Vgs: 230 mOhm @ 1.5A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 1mA,

SH8M3TB1

bahagian bahagian: 180841

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5A, 4.5A, Rds On (Maks) @ Id, Vgs: 51 mOhm @ 5A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 1mA,