Transistor - FET, MOSFET - Susunan

FDS9933A

bahagian bahagian: 190178

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.8A, Rds On (Maks) @ Id, Vgs: 75 mOhm @ 3.8A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

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FDC6506P

bahagian bahagian: 194858

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.8A, Rds On (Maks) @ Id, Vgs: 170 mOhm @ 1.8A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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NVMFD5483NLT1G

bahagian bahagian: 65498

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.4A, Rds On (Maks) @ Id, Vgs: 36 mOhm @ 15A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

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FDC6305N

bahagian bahagian: 129016

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.7A, Rds On (Maks) @ Id, Vgs: 80 mOhm @ 2.7A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

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NTUD3129PT5G

bahagian bahagian: 2940

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 140mA, Rds On (Maks) @ Id, Vgs: 5 Ohm @ 100mA, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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NVMFD5875NLT1G

bahagian bahagian: 155747

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7A, Rds On (Maks) @ Id, Vgs: 33 mOhm @ 7.5A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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FDMS3668S

bahagian bahagian: 82251

Jenis FET: 2 N-Channel (Dual) Asymmetrical, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 13A, 18A, Rds On (Maks) @ Id, Vgs: 8 mOhm @ 13A, 10V, Vgs (th) (Maks) @ Id: 2.7V @ 250µA,

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Taiwan Semiconductor Corporation

NVMFD5C470NLWFT1G

bahagian bahagian: 277

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 11A (Ta), 36A (Tc), Rds On (Maks) @ Id, Vgs: 11.5 mOhm @ 5A, 10V, Vgs (th) (Maks) @ Id: 2.2V @ 20µA,

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Infineon Technologies

FF11MR12W1M1B11BOMA1

bahagian bahagian: 3093

Jenis FET: 2 N-Channel (Dual), Ciri FET: Silicon Carbide (SiC), Saliran ke Voltan Sumber (Vdss): 1200V (1.2kV), Semasa - Saliran Berterusan (Id) @ 25 ° C: 100A, Rds On (Maks) @ Id, Vgs: 11 mOhm @ 100A, 15V, Vgs (th) (Maks) @ Id: 5.55V @ 40mA,

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Infineon Technologies

IRF6723M2DTR1P

bahagian bahagian: 3004

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 15A, Rds On (Maks) @ Id, Vgs: 6.6 mOhm @ 15A, 10V, Vgs (th) (Maks) @ Id: 2.35V @ 25µA,

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TSM6968SDCA RVG

bahagian bahagian: 9997

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.5A (Ta), Rds On (Maks) @ Id, Vgs: 22 mOhm @ 6.5A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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DMN2016LHAB-7

bahagian bahagian: 190312

Jenis FET: 2 N-Channel (Dual) Common Drain, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7.5A, Rds On (Maks) @ Id, Vgs: 15.5 mOhm @ 4A, 4.5V, Vgs (th) (Maks) @ Id: 1.1V @ 250µA,

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DMG1016VQ-13

bahagian bahagian: 163191

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 870mA, 640mA, Rds On (Maks) @ Id, Vgs: 400 mOhm @ 600mA, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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DMC1030UFDB-13

bahagian bahagian: 115059

Jenis FET: N and P-Channel Complementary, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.1A (Ta), 3.9A (Ta), Rds On (Maks) @ Id, Vgs: 34 mOhm @ 4.6A, 4.5V, 59 mOhm @ 3.6A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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DMN2029USD-13

bahagian bahagian: 136935

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.8A, Rds On (Maks) @ Id, Vgs: 25 mOhm @ 6.5A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

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ZXMHC6A07T8TA

bahagian bahagian: 83548

Jenis FET: 2 N and 2 P-Channel (H-Bridge), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.6A, 1.3A, Rds On (Maks) @ Id, Vgs: 300 mOhm @ 1.8A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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SH8M41TB1

bahagian bahagian: 127833

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 80V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.4A, 2.6A, Rds On (Maks) @ Id, Vgs: 130 mOhm @ 3.4A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 1mA,

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QH8KA4TCR

bahagian bahagian: 78816

Jenis FET: 2 N-Channel (Dual), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 9A, Rds On (Maks) @ Id, Vgs: 17 mOhm @ 7A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 1mA,

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TT8J21TR

bahagian bahagian: 169061

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.5A, Rds On (Maks) @ Id, Vgs: 68 mOhm @ 2.5A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 1mA,

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SH8J66TB1

bahagian bahagian: 75609

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 9A, Rds On (Maks) @ Id, Vgs: 18.5 mOhm @ 9A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 1mA,

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SI3590DV-T1-GE3

bahagian bahagian: 199636

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.5A, 1.7A, Rds On (Maks) @ Id, Vgs: 77 mOhm @ 3A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

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SI7998DP-T1-GE3

bahagian bahagian: 103462

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 25A, 30A, Rds On (Maks) @ Id, Vgs: 9.3 mOhm @ 15A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

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SIA915DJ-T4-GE3

bahagian bahagian: 2966

Jenis FET: 2 P-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.7A (Ta), 4.5A (Tc), Rds On (Maks) @ Id, Vgs: 87 mOhm @ 2.9A, 10V, Vgs (th) (Maks) @ Id: 2.2V @ 250µA,

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SIZ322DT-T1-GE3

bahagian bahagian: 266

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 25V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 30A (Tc), Rds On (Maks) @ Id, Vgs: 6.35 mOhm @ 15A, 10V, Vgs (th) (Maks) @ Id: 2.4V @ 250µA,

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SI5944DU-T1-GE3

bahagian bahagian: 2992

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A, Rds On (Maks) @ Id, Vgs: 112 mOhm @ 3.3A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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