Transistor - FET, MOSFET - Susunan

DMC1030UFDBQ-13

bahagian bahagian: 156497

Jenis FET: N and P-Channel Complementary, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.1A, Rds On (Maks) @ Id, Vgs: 34 mOhm @ 4.6A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

DMN62D0UT-13

bahagian bahagian: 146726

DMP57D5UV-7

bahagian bahagian: 2791

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 50V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 160mA, Rds On (Maks) @ Id, Vgs: 6 Ohm @ 100mA, 4V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

RJM0603JSC-00#12

bahagian bahagian: 2981

Jenis FET: 3 N and 3 P-Channel (3-Phase Bridge), Ciri FET: Logic Level Gate, 4.5V Drive, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 20A, Rds On (Maks) @ Id, Vgs: 20 mOhm @ 10A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 1mA,

NTLUD3A260PZTBG

bahagian bahagian: 162644

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.3A, Rds On (Maks) @ Id, Vgs: 200 mOhm @ 2A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

FDPC3D5N025X9D

bahagian bahagian: 97245

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 25V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 74A, Rds On (Maks) @ Id, Vgs: 3.01 mOhm @ 18A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

FDS8949

bahagian bahagian: 64827

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A, Rds On (Maks) @ Id, Vgs: 29 mOhm @ 6A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

ECH8655R-TL-H

bahagian bahagian: 174892

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 24V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 9A, Rds On (Maks) @ Id, Vgs: 17 mOhm @ 4.5A, 4.5V,

NDS8958

bahagian bahagian: 2659

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.3A, 4A, Rds On (Maks) @ Id, Vgs: 35 mOhm @ 5.3A, 10V, Vgs (th) (Maks) @ Id: 2.8V @ 250µA,

NTHD3100CT3

bahagian bahagian: 2692

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.9A, 3.2A, Rds On (Maks) @ Id, Vgs: 80 mOhm @ 2.9A, 4.5V, Vgs (th) (Maks) @ Id: 1.2V @ 250µA,

FDY4001CZ

bahagian bahagian: 2688

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 200mA, 150mA, Rds On (Maks) @ Id, Vgs: 5 Ohm @ 200mA, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

NTMD6P02R2SG

bahagian bahagian: 2763

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.8A, Rds On (Maks) @ Id, Vgs: 33 mOhm @ 6.2A, 4.5V, Vgs (th) (Maks) @ Id: 1.2V @ 250µA,

MMDF3N04HDR2

bahagian bahagian: 2667

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.4A, Rds On (Maks) @ Id, Vgs: 80 mOhm @ 3.4A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

FDMS3660S-F121

bahagian bahagian: 2953

Jenis FET: 2 N-Channel (Dual) Asymmetrical, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 13A, 30A, Rds On (Maks) @ Id, Vgs: 8 mOhm @ 13A, 10V, Vgs (th) (Maks) @ Id: 2.7V @ 250µA,

NTMD2P01R2G

bahagian bahagian: 2669

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 16V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.3A, Rds On (Maks) @ Id, Vgs: 100 mOhm @ 2.4A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

VEC2616-TL-H-Z

bahagian bahagian: 2971

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, 4V Drive, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3A, 2.5A, Rds On (Maks) @ Id, Vgs: 80 mOhm @ 1.5A, 10V,

GWM180-004X2-SL

bahagian bahagian: 3066

Jenis FET: 6 N-Channel (3-Phase Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 180A, Rds On (Maks) @ Id, Vgs: 2.5 mOhm @ 100A, 10V, Vgs (th) (Maks) @ Id: 4.5V @ 1mA,

SI4830CDY-T1-E3

bahagian bahagian: 135865

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8A, Rds On (Maks) @ Id, Vgs: 20 mOhm @ 8A, 10V, Vgs (th) (Maks) @ Id: 3V @ 1mA,

SI5935DC-T1-E3

bahagian bahagian: 3338

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3A, Rds On (Maks) @ Id, Vgs: 86 mOhm @ 3A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

SI6969BDQ-T1-GE3

bahagian bahagian: 2845

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4A, Rds On (Maks) @ Id, Vgs: 30 mOhm @ 4.6A, 4.5V, Vgs (th) (Maks) @ Id: 800mV @ 250µA,

SI3585DV-T1-E3

bahagian bahagian: 2733

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2A, 1.5A, Rds On (Maks) @ Id, Vgs: 125 mOhm @ 2.4A, 4.5V, Vgs (th) (Maks) @ Id: 600mV @ 250µA (Min),

SI4916DY-T1-E3

bahagian bahagian: 159074

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 10A, 10.5A, Rds On (Maks) @ Id, Vgs: 18 mOhm @ 10A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

SI7872DP-T1-E3

bahagian bahagian: 71511

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.4A, Rds On (Maks) @ Id, Vgs: 22 mOhm @ 7.5A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

SI6966DQ-T1-E3

bahagian bahagian: 2873

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4A, Rds On (Maks) @ Id, Vgs: 30 mOhm @ 4.5A, 4.5V, Vgs (th) (Maks) @ Id: 1.4V @ 250µA,

SI4992EY-T1-E3

bahagian bahagian: 2722

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 75V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.6A, Rds On (Maks) @ Id, Vgs: 48 mOhm @ 4.8A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

SI4967DY-T1-GE3

bahagian bahagian: 3379

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 12V, Rds On (Maks) @ Id, Vgs: 23 mOhm @ 7.5A, 4.5V, Vgs (th) (Maks) @ Id: 450mV @ 250µA (Min),

SI1972DH-T1-E3

bahagian bahagian: 2739

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.3A, Rds On (Maks) @ Id, Vgs: 225 mOhm @ 1.3A, 10V, Vgs (th) (Maks) @ Id: 2.8V @ 250µA,

SIA920DJ-T1-GE3

bahagian bahagian: 118547

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 8V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.5A, Rds On (Maks) @ Id, Vgs: 27 mOhm @ 5.3A, 4.5V, Vgs (th) (Maks) @ Id: 700mV @ 250µA,

SI3588DV-T1-E3

bahagian bahagian: 2762

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.5A, 570mA, Rds On (Maks) @ Id, Vgs: 80 mOhm @ 3A, 4.5V, Vgs (th) (Maks) @ Id: 450mV @ 250µA (Min),

SI4388DY-T1-GE3

bahagian bahagian: 2870

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 10.7A, 11.3A, Rds On (Maks) @ Id, Vgs: 16 mOhm @ 8A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

STS3DNE60L

bahagian bahagian: 2665

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3A, Rds On (Maks) @ Id, Vgs: 80 mOhm @ 1.5A, 10V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

STS5DNF20V

bahagian bahagian: 2698

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5A, Rds On (Maks) @ Id, Vgs: 40 mOhm @ 2.5A, 4.5V, Vgs (th) (Maks) @ Id: 600mV @ 250µA,

IRF7901D1TR

bahagian bahagian: 2718

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.2A, Rds On (Maks) @ Id, Vgs: 38 mOhm @ 5A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

IRF7324

bahagian bahagian: 2912

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 9A, Rds On (Maks) @ Id, Vgs: 18 mOhm @ 9A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

IRF7752

bahagian bahagian: 2653

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.6A, Rds On (Maks) @ Id, Vgs: 30 mOhm @ 4.6A, 10V, Vgs (th) (Maks) @ Id: 2V @ 250µA,

SSM6L36FE,LM

bahagian bahagian: 107404

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 500mA, 330mA, Rds On (Maks) @ Id, Vgs: 630 mOhm @ 200mA, 5V, Vgs (th) (Maks) @ Id: 1V @ 1mA,