Transistor - FET, MOSFET - Susunan

DMC2004VK-7

bahagian bahagian: 152592

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 670mA, 530mA, Rds On (Maks) @ Id, Vgs: 550 mOhm @ 540mA, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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DMP2160UFDB-7

bahagian bahagian: 170482

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.8A, Rds On (Maks) @ Id, Vgs: 70 mOhm @ 2.8A, 4.5V, Vgs (th) (Maks) @ Id: 900mV @ 250µA,

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DMP3085LSD-13

bahagian bahagian: 197990

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.9A, Rds On (Maks) @ Id, Vgs: 70 mOhm @ 5.3A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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DMG1026UV-7

bahagian bahagian: 118631

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 410mA, Rds On (Maks) @ Id, Vgs: 1.8 Ohm @ 500mA, 10V, Vgs (th) (Maks) @ Id: 1.8V @ 250µA,

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DMC2004DWK-7

bahagian bahagian: 194049

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 540mA, 430mA, Rds On (Maks) @ Id, Vgs: 550 mOhm @ 540mA, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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DMN6040SSDQ-13

bahagian bahagian: 115786

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5A (Ta), Rds On (Maks) @ Id, Vgs: 40 mOhm @ 4.5A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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Infineon Technologies

IRFH7911TRPBF

bahagian bahagian: 61001

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 13A, 28A, Rds On (Maks) @ Id, Vgs: 8.6 mOhm @ 12A, 10V, Vgs (th) (Maks) @ Id: 2.35V @ 25µA,

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Infineon Technologies

IRF7530TRPBF

bahagian bahagian: 169065

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.4A, Rds On (Maks) @ Id, Vgs: 30 mOhm @ 5.4A, 4.5V, Vgs (th) (Maks) @ Id: 1.2V @ 250µA,

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SISF00DN-T1-GE3

bahagian bahagian: 2608

Jenis FET: 2 N-Channel (Dual) Common Drain, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 60A (Tc), Rds On (Maks) @ Id, Vgs: 5 mOhm @ 10A, 10V, Vgs (th) (Maks) @ Id: 2.1V @ 250µA,

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SQJ262EP-T1_GE3

bahagian bahagian: 2536

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 15A (Tc), 40A (Tc), Rds On (Maks) @ Id, Vgs: 35.5 mOhm @ 2A, 10V, 15.5 mOhm @ 5A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

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SQS944ENW-T1_GE3

bahagian bahagian: 2484

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A (Tc), Rds On (Maks) @ Id, Vgs: 25 mOhm @ 1.25A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

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SI4202DY-T1-GE3

bahagian bahagian: 118970

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 12.1A, Rds On (Maks) @ Id, Vgs: 14 mOhm @ 8A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

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SI1029X-T1-GE3

bahagian bahagian: 164736

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 305mA, 190mA, Rds On (Maks) @ Id, Vgs: 1.4 Ohm @ 500mA, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

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SIA533EDJ-T1-GE3

bahagian bahagian: 106980

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.5A, Rds On (Maks) @ Id, Vgs: 34 mOhm @ 4.6A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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SIA975DJ-T1-GE3

bahagian bahagian: 159548

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.5A, Rds On (Maks) @ Id, Vgs: 41 mOhm @ 4.3A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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SQJ260EP-T1_GE3

bahagian bahagian: 2593

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 20A (Tc), 54A (Tc), Rds On (Maks) @ Id, Vgs: 19 mOhm @ 6A, 10V, 8.5 mOhm @ 10A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

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SI1026X-T1-GE3

bahagian bahagian: 107231

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 305mA, Rds On (Maks) @ Id, Vgs: 1.4 Ohm @ 500mA, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

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SI5515CDC-T1-GE3

bahagian bahagian: 185766

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4A, Rds On (Maks) @ Id, Vgs: 36 mOhm @ 6A, 4.5V, Vgs (th) (Maks) @ Id: 800mV @ 250µA,

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SI1539CDL-T1-GE3

bahagian bahagian: 143752

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 700mA, 500mA, Rds On (Maks) @ Id, Vgs: 388 mOhm @ 600mA, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

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SIA517DJ-T1-GE3

bahagian bahagian: 150755

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.5A, Rds On (Maks) @ Id, Vgs: 29 mOhm @ 5A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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SIR770DP-T1-GE3

bahagian bahagian: 139904

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8A, Rds On (Maks) @ Id, Vgs: 21 mOhm @ 8A, 10V, Vgs (th) (Maks) @ Id: 2.8V @ 250µA,

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SI1553CDL-T1-GE3

bahagian bahagian: 145828

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 700mA, 500mA, Rds On (Maks) @ Id, Vgs: 390 mOhm @ 700mA, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

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FDMA1024NZ

bahagian bahagian: 167329

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5A, Rds On (Maks) @ Id, Vgs: 54 mOhm @ 5A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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CPH6636R-TL-W

bahagian bahagian: 161568

Jenis FET: 2 N-Channel (Dual) Common Drain, Ciri FET: Logic Level Gate, 2.5V Drive, Saliran ke Voltan Sumber (Vdss): 24V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A, Rds On (Maks) @ Id, Vgs: 20 mOhm @ 3A, 4.5V,

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FDS89161LZ

bahagian bahagian: 125136

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.7A, Rds On (Maks) @ Id, Vgs: 105 mOhm @ 2.7A, 10V, Vgs (th) (Maks) @ Id: 2.2V @ 250µA,

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NTLGD3502NT2G

bahagian bahagian: 150994

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.3A, 3.6A, Rds On (Maks) @ Id, Vgs: 60 mOhm @ 4.3A, 4.5V, Vgs (th) (Maks) @ Id: 2V @ 250µA,

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FDMS3624S

bahagian bahagian: 88033

Jenis FET: 2 N-Channel (Dual) Asymmetrical, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 25V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 17.5A, 30A, Rds On (Maks) @ Id, Vgs: 5 mOhm @ 17.5A, 10V, Vgs (th) (Maks) @ Id: 2V @ 250µA,

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FDS89161

bahagian bahagian: 125135

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.7A, Rds On (Maks) @ Id, Vgs: 105 mOhm @ 2.7A, 10V, Vgs (th) (Maks) @ Id: 4V @ 250µA,

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