Transistor - FET, MOSFET - Susunan

BSG0811NDATMA1

bahagian bahagian: 73789

Jenis FET: 2 N-Channel (Dual) Asymmetrical, Ciri FET: Logic Level Gate, 4.5V Drive, Saliran ke Voltan Sumber (Vdss): 25V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 19A, 41A, Rds On (Maks) @ Id, Vgs: 3 mOhm @ 20A, 10V, Vgs (th) (Maks) @ Id: 2V @ 250µA,

BSG0813NDIATMA1

bahagian bahagian: 73114

Jenis FET: 2 N-Channel (Dual) Asymmetrical, Ciri FET: Logic Level Gate, 4.5V Drive, Saliran ke Voltan Sumber (Vdss): 25V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 19A, 33A, Rds On (Maks) @ Id, Vgs: 3 mOhm @ 20A, 10V, Vgs (th) (Maks) @ Id: 2V @ 250µA,

BSC0910NDIATMA1

bahagian bahagian: 78348

Jenis FET: 2 N-Channel (Dual) Asymmetrical, Ciri FET: Logic Level Gate, 4.5V Drive, Saliran ke Voltan Sumber (Vdss): 25V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 11A, 31A, Rds On (Maks) @ Id, Vgs: 4.6 mOhm @ 25A, 10V, Vgs (th) (Maks) @ Id: 2V @ 250µA,

BSO303PHXUMA1

bahagian bahagian: 2618

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7A, Rds On (Maks) @ Id, Vgs: 21 mOhm @ 8.2A, 10V, Vgs (th) (Maks) @ Id: 2V @ 100µA,

BSO203PHXUMA1

bahagian bahagian: 105084

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7A, Rds On (Maks) @ Id, Vgs: 21 mOhm @ 8.2A, 4.5V, Vgs (th) (Maks) @ Id: 1.2V @ 100µA,

BSC0921NDIATMA1

bahagian bahagian: 108715

Jenis FET: 2 N-Channel (Dual) Asymmetrical, Ciri FET: Logic Level Gate, 4.5V Drive, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 17A, 31A, Rds On (Maks) @ Id, Vgs: 5 mOhm @ 20A, 10V, Vgs (th) (Maks) @ Id: 2V @ 250µA,

BSC750N10NDGATMA1

bahagian bahagian: 2515

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.2A, Rds On (Maks) @ Id, Vgs: 75 mOhm @ 13A, 10V, Vgs (th) (Maks) @ Id: 4V @ 12µA,

BSC0993NDATMA1

bahagian bahagian: 133898

Jenis FET: 2 N-Channel, Ciri FET: Standard, Semasa - Saliran Berterusan (Id) @ 25 ° C: 17A (Ta), Rds On (Maks) @ Id, Vgs: 5 mOhm @ 7A, 10V, Vgs (th) (Maks) @ Id: 2V @ 250µA,

BSC072N03LDGATMA1

bahagian bahagian: 2560

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 11.5A, Rds On (Maks) @ Id, Vgs: 7.2 mOhm @ 20A, 10V, Vgs (th) (Maks) @ Id: 2.2V @ 250µA,

BSZ0910NDXTMA1

bahagian bahagian: 2500

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, 4.5V Drive, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 9.5A (Ta), 25A (Tc), Rds On (Maks) @ Id, Vgs: 9.5 mOhm @ 9A, 10V, Vgs (th) (Maks) @ Id: 2V @ 250µA,

BSZ0909NDXTMA1

bahagian bahagian: 154990

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, 4.5V Drive, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 20A (Tc), Rds On (Maks) @ Id, Vgs: 18 mOhm @ 9A, 10V, Vgs (th) (Maks) @ Id: 2V @ 250µA,

BSZ215CHXTMA1

bahagian bahagian: 143103

Jenis FET: N and P-Channel Complementary, Ciri FET: Logic Level Gate, 2.5V Drive, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.1A, 3.2A, Rds On (Maks) @ Id, Vgs: 55 mOhm @ 5.1A, 4.5V, Vgs (th) (Maks) @ Id: 1.4V @ 110µA,

BSC0923NDIATMA1

bahagian bahagian: 151164

Jenis FET: 2 N-Channel (Dual) Asymmetrical, Ciri FET: Logic Level Gate, 4.5V Drive, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 17A, 32A, Rds On (Maks) @ Id, Vgs: 5 mOhm @ 20A, 10V, Vgs (th) (Maks) @ Id: 2V @ 250µA,

BSC0924NDIATMA1

bahagian bahagian: 152816

Jenis FET: 2 N-Channel (Dual) Asymmetrical, Ciri FET: Logic Level Gate, 4.5V Drive, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 17A, 32A, Rds On (Maks) @ Id, Vgs: 5 mOhm @ 20A, 10V, Vgs (th) (Maks) @ Id: 2V @ 250µA,

BSO604NS2XUMA1

bahagian bahagian: 154962

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 55V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5A, Rds On (Maks) @ Id, Vgs: 35 mOhm @ 2.5A, 10V, Vgs (th) (Maks) @ Id: 2V @ 30µA,

BSO207PHXUMA1

bahagian bahagian: 161068

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5A, Rds On (Maks) @ Id, Vgs: 45 mOhm @ 5.7A, 4.5V, Vgs (th) (Maks) @ Id: 1.2V @ 44µA,

BSO211PHXUMA1

bahagian bahagian: 164134

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4A, Rds On (Maks) @ Id, Vgs: 67 mOhm @ 4.6A, 4.5V, Vgs (th) (Maks) @ Id: 1.2V @ 25µA,

BSO615CGHUMA1

bahagian bahagian: 2523

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.1A, 2A, Rds On (Maks) @ Id, Vgs: 110 mOhm @ 3.1A, 10V, Vgs (th) (Maks) @ Id: 2V @ 20µA,

BSO612CVGHUMA1

bahagian bahagian: 171470

Jenis FET: N and P-Channel, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3A, 2A, Rds On (Maks) @ Id, Vgs: 120 mOhm @ 3A, 10V, Vgs (th) (Maks) @ Id: 4V @ 20µA,

BSZ15DC02KDHXTMA1

bahagian bahagian: 166896

Jenis FET: N and P-Channel Complementary, Ciri FET: Logic Level Gate, 2.5V Drive, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.1A, 3.2A, Rds On (Maks) @ Id, Vgs: 55 mOhm @ 5.1A, 4.5V, Vgs (th) (Maks) @ Id: 1.4V @ 110µA,

BSD840NH6327XTSA1

bahagian bahagian: 124088

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 880mA, Rds On (Maks) @ Id, Vgs: 400 mOhm @ 880mA, 2.5V, Vgs (th) (Maks) @ Id: 750mV @ 1.6µA,

BSC0925NDATMA1

bahagian bahagian: 145035

Jenis FET: 2 N Channel (Dual Buck Chopper), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 15A, Rds On (Maks) @ Id, Vgs: 5 mOhm @ 20A, 10V, Vgs (th) (Maks) @ Id: 2V @ 250µA,

BSL308PEH6327XTSA1

bahagian bahagian: 149358

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, 4.5V Drive, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2A, Rds On (Maks) @ Id, Vgs: 80 mOhm @ 2A, 10V, Vgs (th) (Maks) @ Id: 1V @ 11µA,

BSL306NH6327XTSA1

bahagian bahagian: 118173

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, 4.5V Drive, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.3A, Rds On (Maks) @ Id, Vgs: 57 mOhm @ 2.3A, 10V, Vgs (th) (Maks) @ Id: 2V @ 11µA,

BSL215CH6327XTSA1

bahagian bahagian: 146349

Jenis FET: N and P-Channel Complementary, Ciri FET: Logic Level Gate, 2.5V Drive, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.5A, Rds On (Maks) @ Id, Vgs: 140 mOhm @ 1.5A, 4.5V, Vgs (th) (Maks) @ Id: 1.2V @ 3.7µA,

BSL207NH6327XTSA1

bahagian bahagian: 152011

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, 2.5V Drive, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.1A, Rds On (Maks) @ Id, Vgs: 70 mOhm @ 2.1A, 4.5V, Vgs (th) (Maks) @ Id: 1.2V @ 11µA,

BSL314PEH6327XTSA1

bahagian bahagian: 198370

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, 4.5V Drive, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.5A, Rds On (Maks) @ Id, Vgs: 140 mOhm @ 1.5A, 10V, Vgs (th) (Maks) @ Id: 2V @ 6.3µA,

BSL205NH6327XTSA1

bahagian bahagian: 102698

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, 4.5V Drive, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.5A, Rds On (Maks) @ Id, Vgs: 50 mOhm @ 2.5A, 4.5V, Vgs (th) (Maks) @ Id: 1.2V @ 11µA,

BSL806NH6327XTSA1

bahagian bahagian: 103295

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, 1.8V Drive, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.3A (Ta), Rds On (Maks) @ Id, Vgs: 57 mOhm @ 2.3A, 2.5V, Vgs (th) (Maks) @ Id: 750mV @ 11µA,

BSL214NH6327XTSA1

bahagian bahagian: 161005

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, 2.5V Drive, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.5A, Rds On (Maks) @ Id, Vgs: 140 mOhm @ 1.5A, 4.5V, Vgs (th) (Maks) @ Id: 1.2V @ 3.7µA,

BSL316CH6327XTSA1

bahagian bahagian: 148518

Jenis FET: N and P-Channel Complementary, Ciri FET: Logic Level Gate, 4.5V Drive, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.4A, 1.5A, Rds On (Maks) @ Id, Vgs: 160 mOhm @ 1.4A, 10V, Vgs (th) (Maks) @ Id: 2V @ 3.7µA,

BSD235CH6327XTSA1

bahagian bahagian: 113505

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 950mA, 530mA, Rds On (Maks) @ Id, Vgs: 350 mOhm @ 950mA, 4.5V, Vgs (th) (Maks) @ Id: 1.2V @ 1.6µA,

BSD340NH6327XTSA1

bahagian bahagian: 125807

BSD223PH6327XTSA1

bahagian bahagian: 154052

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 390mA, Rds On (Maks) @ Id, Vgs: 1.2 Ohm @ 390mA, 4.5V, Vgs (th) (Maks) @ Id: 1.2V @ 1.5µA,

FF23MR12W1M1B11BOMA1

bahagian bahagian: 163

Jenis FET: 2 N-Channel (Dual), Ciri FET: Silicon Carbide (SiC), Saliran ke Voltan Sumber (Vdss): 1200V (1.2kV), Semasa - Saliran Berterusan (Id) @ 25 ° C: 50A, Rds On (Maks) @ Id, Vgs: 23 mOhm @ 50A, 15V, Vgs (th) (Maks) @ Id: 5.55V @ 20mA,

IRF7342PBF

bahagian bahagian: 59591

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 55V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.4A, Rds On (Maks) @ Id, Vgs: 105 mOhm @ 3.4A, 10V, Vgs (th) (Maks) @ Id: 1V @ 250µA,