Transistor - FET, MOSFET - Susunan

Rumah
Transistor - FET, MOSFET - Susunan

Infineon Technologies

IRFHM8363TRPBF

bahagian bahagian: 191314

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 11A, Rds On (Maks) @ Id, Vgs: 14.9 mOhm @ 10A, 10V, Vgs (th) (Maks) @ Id: 2.35V @ 25µA,

Senarai harapan

IPG20N04S4L11AATMA1

Infineon Technologies

IPG20N04S4L11AATMA1

bahagian bahagian: 165940

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 20A, Rds On (Maks) @ Id, Vgs: 11.6 mOhm @ 17A, 10V, Vgs (th) (Maks) @ Id: 2.2V @ 15µA,

Senarai harapan

IPG20N06S4L11AATMA1

Infineon Technologies

IPG20N06S4L11AATMA1

bahagian bahagian: 94288

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 20A, Rds On (Maks) @ Id, Vgs: 11.2 mOhm @ 17A, 10V, Vgs (th) (Maks) @ Id: 2.2V @ 28µA,

Senarai harapan

Infineon Technologies

IRF7309TRPBF

bahagian bahagian: 150382

Jenis FET: N and P-Channel, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4A, 3A, Rds On (Maks) @ Id, Vgs: 50 mOhm @ 2.4A, 10V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

Senarai harapan

IPG20N04S408ATMA1

Infineon Technologies

IPG20N04S408ATMA1

bahagian bahagian: 104533

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 20A, Rds On (Maks) @ Id, Vgs: 7.6 mOhm @ 17A, 10V, Vgs (th) (Maks) @ Id: 4V @ 30µA,

Senarai harapan

IPG20N10S4L35AATMA1

Infineon Technologies

IPG20N10S4L35AATMA1

bahagian bahagian: 155833

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 20A, Rds On (Maks) @ Id, Vgs: 35 mOhm @ 17A, 10V, Vgs (th) (Maks) @ Id: 2.1V @ 16µA,

Senarai harapan

IPG20N04S412ATMA1

Infineon Technologies

IPG20N04S412ATMA1

bahagian bahagian: 172931

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 20A, Rds On (Maks) @ Id, Vgs: 12.2 mOhm @ 17A, 10V, Vgs (th) (Maks) @ Id: 4V @ 15µA,

Senarai harapan

IPG20N10S436AATMA1

Infineon Technologies

IPG20N10S436AATMA1

bahagian bahagian: 139478

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 20A, Rds On (Maks) @ Id, Vgs: 36 mOhm @ 17A, 10V, Vgs (th) (Maks) @ Id: 3.5V @ 16µA,

Senarai harapan

Infineon Technologies

IRF7331TRPBF

bahagian bahagian: 196280

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7A, Rds On (Maks) @ Id, Vgs: 30 mOhm @ 7A, 4.5V, Vgs (th) (Maks) @ Id: 1.2V @ 250µA,

Senarai harapan

Infineon Technologies

IRF7104TRPBF

bahagian bahagian: 104561

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.3A, Rds On (Maks) @ Id, Vgs: 250 mOhm @ 1A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

Senarai harapan

Infineon Technologies

IRF7379TRPBF

bahagian bahagian: 199093

Jenis FET: N and P-Channel, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.8A, 4.3A, Rds On (Maks) @ Id, Vgs: 45 mOhm @ 5.8A, 10V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

Senarai harapan

IPG20N10S4L22AATMA1

Infineon Technologies

IPG20N10S4L22AATMA1

bahagian bahagian: 108999

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 20A, Rds On (Maks) @ Id, Vgs: 22 mOhm @ 17A, 10V, Vgs (th) (Maks) @ Id: 2.1V @ 25µA,

Senarai harapan

Infineon Technologies

IRF6802SDTRPBF

bahagian bahagian: 60962

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 25V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 16A, Rds On (Maks) @ Id, Vgs: 4.2 mOhm @ 16A, 10V, Vgs (th) (Maks) @ Id: 2.1V @ 35µA,

Senarai harapan

IPG20N06S4L26ATMA1

Infineon Technologies

IPG20N06S4L26ATMA1

bahagian bahagian: 197280

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 20A, Rds On (Maks) @ Id, Vgs: 26 mOhm @ 17A, 10V, Vgs (th) (Maks) @ Id: 2.2V @ 10µA,

Senarai harapan

Infineon Technologies

IRLHS6376TRPBF

bahagian bahagian: 115333

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.6A, Rds On (Maks) @ Id, Vgs: 63 mOhm @ 3.4A, 4.5V, Vgs (th) (Maks) @ Id: 1.1V @ 10µA,

Senarai harapan

Infineon Technologies

IRF7902TRPBF

bahagian bahagian: 168640

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.4A, 9.7A, Rds On (Maks) @ Id, Vgs: 22.6 mOhm @ 6.4A, 10V, Vgs (th) (Maks) @ Id: 2.25V @ 25µA,

Senarai harapan

Infineon Technologies

IRF7311TRPBF

bahagian bahagian: 168715

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.6A, Rds On (Maks) @ Id, Vgs: 29 mOhm @ 6A, 4.5V, Vgs (th) (Maks) @ Id: 700mV @ 250µA,

Senarai harapan

Infineon Technologies

IRF7316TRPBF

bahagian bahagian: 172337

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.9A, Rds On (Maks) @ Id, Vgs: 58 mOhm @ 4.9A, 10V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

Senarai harapan

Infineon Technologies

IRF7904TRPBF

bahagian bahagian: 188754

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7.6A, 11A, Rds On (Maks) @ Id, Vgs: 16.2 mOhm @ 7.6A, 10V, Vgs (th) (Maks) @ Id: 2.25V @ 25µA,

Senarai harapan

Infineon Technologies

IRF7303TRPBF

bahagian bahagian: 185377

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.9A, Rds On (Maks) @ Id, Vgs: 50 mOhm @ 2.4A, 10V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

Senarai harapan

IPG20N04S408AATMA1

Infineon Technologies

IPG20N04S408AATMA1

bahagian bahagian: 101294

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 20A, Rds On (Maks) @ Id, Vgs: 7.6 mOhm @ 17A, 10V, Vgs (th) (Maks) @ Id: 4V @ 30µA,

Senarai harapan

Infineon Technologies

IRF7342TRPBF

bahagian bahagian: 156976

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 55V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.4A, Rds On (Maks) @ Id, Vgs: 105 mOhm @ 3.4A, 10V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

Senarai harapan

Infineon Technologies

IRF7105TRPBF

bahagian bahagian: 196914

Jenis FET: N and P-Channel, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 25V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.5A, 2.3A, Rds On (Maks) @ Id, Vgs: 100 mOhm @ 1A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

Senarai harapan

IPG16N10S4L61AATMA1

Infineon Technologies

IPG16N10S4L61AATMA1

bahagian bahagian: 195154

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 16A, Rds On (Maks) @ Id, Vgs: 61 mOhm @ 16A, 10V, Vgs (th) (Maks) @ Id: 2.1V @ 90µA,

Senarai harapan

IPG20N06S4L14ATMA2

Infineon Technologies

IPG20N06S4L14ATMA2

bahagian bahagian: 126778

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 20A, Rds On (Maks) @ Id, Vgs: 13.7 mOhm @ 17A, 10V, Vgs (th) (Maks) @ Id: 2.2V @ 20µA,

Senarai harapan

Infineon Technologies

IRF7304

bahagian bahagian: 40531

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.3A, Rds On (Maks) @ Id, Vgs: 90 mOhm @ 2.2A, 4.5V, Vgs (th) (Maks) @ Id: 700mV @ 250µA,

Senarai harapan

Infineon Technologies

IRF8313TRPBF

bahagian bahagian: 190133

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 9.7A, Rds On (Maks) @ Id, Vgs: 15.5 mOhm @ 9.7A, 10V, Vgs (th) (Maks) @ Id: 2.35V @ 25µA,

Senarai harapan

Infineon Technologies

IRFH4251DTRPBF

bahagian bahagian: 49673

Jenis FET: 2 N-Channel (Dual), Schottky, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 25V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 64A, 188A, Rds On (Maks) @ Id, Vgs: 3.2 mOhm @ 30A, 10V, Vgs (th) (Maks) @ Id: 2.1V @ 35µA,

Senarai harapan

IPG20N06S4L11ATMA1

Infineon Technologies

IPG20N06S4L11ATMA1

bahagian bahagian: 97219

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 20A, Rds On (Maks) @ Id, Vgs: 11.2 mOhm @ 17A, 10V, Vgs (th) (Maks) @ Id: 2.2V @ 28µA,

Senarai harapan

Infineon Technologies

IRF7341TRPBF

bahagian bahagian: 73259

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 55V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.7A, Rds On (Maks) @ Id, Vgs: 50 mOhm @ 4.7A, 10V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

Senarai harapan

Infineon Technologies

IRF7319TRPBF

bahagian bahagian: 180145

Jenis FET: N and P-Channel, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Rds On (Maks) @ Id, Vgs: 29 mOhm @ 5.8A, 10V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

Senarai harapan

Infineon Technologies

IRF7389TRPBF

bahagian bahagian: 166810

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Rds On (Maks) @ Id, Vgs: 29 mOhm @ 5.8A, 10V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

Senarai harapan

Infineon Technologies

IRF7907TRPBF

bahagian bahagian: 173843

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 9.1A, 11A, Rds On (Maks) @ Id, Vgs: 16.4 mOhm @ 9.1A, 10V, Vgs (th) (Maks) @ Id: 2.35V @ 25µA,

Senarai harapan

Infineon Technologies

IRFHM792TRPBF

bahagian bahagian: 82378

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.3A, Rds On (Maks) @ Id, Vgs: 195 mOhm @ 2.9A, 10V, Vgs (th) (Maks) @ Id: 4V @ 10µA,

Senarai harapan

Infineon Technologies

IRF7506TRPBF

bahagian bahagian: 149700

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.7A, Rds On (Maks) @ Id, Vgs: 270 mOhm @ 1.2A, 10V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

Senarai harapan

Infineon Technologies

IRF9362TRPBF

bahagian bahagian: 188725

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8A, Rds On (Maks) @ Id, Vgs: 21 mOhm @ 8A, 10V, Vgs (th) (Maks) @ Id: 2.4V @ 25µA,

Senarai harapan

384

«
2
3
4
5
6
7
8
9
10
11
»