Transistor - FET, MOSFET - Susunan

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Transistor - FET, MOSFET - Susunan

Infineon Technologies

IRF7506TR

bahagian bahagian: 2648

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.7A, Rds On (Maks) @ Id, Vgs: 270 mOhm @ 1.2A, 10V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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Infineon Technologies

IRF7328PBF

bahagian bahagian: 58156

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8A, Rds On (Maks) @ Id, Vgs: 21 mOhm @ 8A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

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Infineon Technologies

IRF7756GTRPBF

bahagian bahagian: 2800

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.3A, Rds On (Maks) @ Id, Vgs: 40 mOhm @ 4.3A, 4.5V, Vgs (th) (Maks) @ Id: 900mV @ 250µA,

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Infineon Technologies

IRF7104PBF

bahagian bahagian: 100274

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.3A, Rds On (Maks) @ Id, Vgs: 250 mOhm @ 1A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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Infineon Technologies

IRF7328TR

bahagian bahagian: 2700

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8A, Rds On (Maks) @ Id, Vgs: 21 mOhm @ 8A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

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Infineon Technologies

IRF7304PBF

bahagian bahagian: 67896

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.3A, Rds On (Maks) @ Id, Vgs: 90 mOhm @ 2.2A, 4.5V, Vgs (th) (Maks) @ Id: 700mV @ 250µA,

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Infineon Technologies

IRF7530TR

bahagian bahagian: 2684

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.4A, Rds On (Maks) @ Id, Vgs: 30 mOhm @ 5.4A, 4.5V, Vgs (th) (Maks) @ Id: 1.2V @ 250µA,

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Infineon Technologies

IRF7755

bahagian bahagian: 2693

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.9A, Rds On (Maks) @ Id, Vgs: 51 mOhm @ 3.7A, 4.5V, Vgs (th) (Maks) @ Id: 1.2V @ 250µA,

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Infineon Technologies

IRF7350TRPBF

bahagian bahagian: 3331

Jenis FET: N and P-Channel, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.1A, 1.5A, Rds On (Maks) @ Id, Vgs: 210 mOhm @ 2.1A, 10V, Vgs (th) (Maks) @ Id: 4V @ 250µA,

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Infineon Technologies

IRF7306QTRPBF

bahagian bahagian: 2778

Jenis FET: 2 P-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.6A, Rds On (Maks) @ Id, Vgs: 100 mOhm @ 1.8A, 10V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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Infineon Technologies

IRF7324PBF

bahagian bahagian: 40730

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 9A, Rds On (Maks) @ Id, Vgs: 18 mOhm @ 9A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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Infineon Technologies

IRF7313QTRPBF

bahagian bahagian: 2771

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.5A, Rds On (Maks) @ Id, Vgs: 29 mOhm @ 5.8A, 10V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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Infineon Technologies

IRF7103Q

bahagian bahagian: 2957

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 50V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3A, Rds On (Maks) @ Id, Vgs: 130 mOhm @ 3A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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Infineon Technologies

IRF7751GTRPBF

bahagian bahagian: 2740

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.5A, Rds On (Maks) @ Id, Vgs: 35 mOhm @ 4.5A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

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Infineon Technologies

IRF5810TR

bahagian bahagian: 2641

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.9A, Rds On (Maks) @ Id, Vgs: 90 mOhm @ 2.9A, 4.5V, Vgs (th) (Maks) @ Id: 1.2V @ 250µA,

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Infineon Technologies

IRF8852TRPBF

bahagian bahagian: 2855

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 25V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7.8A, Rds On (Maks) @ Id, Vgs: 11.3 mOhm @ 7.8A, 10V, Vgs (th) (Maks) @ Id: 2.35V @ 25µA,

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Infineon Technologies

IRF5850

bahagian bahagian: 2724

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.2A, Rds On (Maks) @ Id, Vgs: 135 mOhm @ 2.2A, 4.5V, Vgs (th) (Maks) @ Id: 1.2V @ 250µA,

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IPG20N06S4L26AATMA1

Infineon Technologies

IPG20N06S4L26AATMA1

bahagian bahagian: 186995

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 20A, Rds On (Maks) @ Id, Vgs: 26 mOhm @ 17A, 10V, Vgs (th) (Maks) @ Id: 2.2V @ 10µA,

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IPG20N10S4L35ATMA1

Infineon Technologies

IPG20N10S4L35ATMA1

bahagian bahagian: 169062

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 20A, Rds On (Maks) @ Id, Vgs: 35 mOhm @ 17A, 10V, Vgs (th) (Maks) @ Id: 2.1V @ 16µA,

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IPG16N10S461AATMA1

Infineon Technologies

IPG16N10S461AATMA1

bahagian bahagian: 195163

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 16A, Rds On (Maks) @ Id, Vgs: 61 mOhm @ 16A, 10V, Vgs (th) (Maks) @ Id: 3.5V @ 9µA,

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IPG20N04S4L08ATMA1

Infineon Technologies

IPG20N04S4L08ATMA1

bahagian bahagian: 128418

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 20A, Rds On (Maks) @ Id, Vgs: 8.2 mOhm @ 17A, 10V, Vgs (th) (Maks) @ Id: 2.2V @ 22µA,

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Infineon Technologies

IRF7351TRPBF

bahagian bahagian: 111531

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8A, Rds On (Maks) @ Id, Vgs: 17.8 mOhm @ 8A, 10V, Vgs (th) (Maks) @ Id: 4V @ 50µA,

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IPG20N06S2L35AATMA1

Infineon Technologies

IPG20N06S2L35AATMA1

bahagian bahagian: 128569

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 55V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2A (Tc), Rds On (Maks) @ Id, Vgs: 35 mOhm @ 15A, 10V, Vgs (th) (Maks) @ Id: 2V @ 27µA,

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Infineon Technologies

IRF9953TRPBF

bahagian bahagian: 182561

Jenis FET: 2 P-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.3A, Rds On (Maks) @ Id, Vgs: 250 mOhm @ 1A, 10V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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IPG20N04S412AATMA1

Infineon Technologies

IPG20N04S412AATMA1

bahagian bahagian: 165975

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 20A, Rds On (Maks) @ Id, Vgs: 12.2 mOhm @ 17A, 10V, Vgs (th) (Maks) @ Id: 4V @ 15µA,

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IPG20N10S4L22ATMA1

Infineon Technologies

IPG20N10S4L22ATMA1

bahagian bahagian: 113849

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 20A, Rds On (Maks) @ Id, Vgs: 22 mOhm @ 17A, 10V, Vgs (th) (Maks) @ Id: 2.1V @ 25µA,

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Infineon Technologies

IRF7329TRPBF

bahagian bahagian: 126207

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 9.2A, Rds On (Maks) @ Id, Vgs: 17 mOhm @ 9.2A, 4.5V, Vgs (th) (Maks) @ Id: 900mV @ 250µA,

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Infineon Technologies

IRF9389TRPBF

bahagian bahagian: 156541

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.8A, 4.6A, Rds On (Maks) @ Id, Vgs: 27 mOhm @ 6.8A, 10V, Vgs (th) (Maks) @ Id: 2.3V @ 10µA,

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Infineon Technologies

IRF7306TR

bahagian bahagian: 84818

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.6A, Rds On (Maks) @ Id, Vgs: 100 mOhm @ 1.8A, 10V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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Infineon Technologies

IRF9395MTRPBF

bahagian bahagian: 53923

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 14A, Rds On (Maks) @ Id, Vgs: 7 mOhm @ 14A, 10V, Vgs (th) (Maks) @ Id: 2.4V @ 50µA,

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Infineon Technologies

IRF9910TRPBF

bahagian bahagian: 144138

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 10A, 12A, Rds On (Maks) @ Id, Vgs: 9.3 mOhm @ 12A, 10V, Vgs (th) (Maks) @ Id: 2.55V @ 250µA,

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IPG20N04S4L07AATMA1

Infineon Technologies

IPG20N04S4L07AATMA1

bahagian bahagian: 101318

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 20A, Rds On (Maks) @ Id, Vgs: 7.2 mOhm @ 17A, 10V, Vgs (th) (Maks) @ Id: 2.2V @ 30µA,

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Infineon Technologies

IRF7905TRPBF

bahagian bahagian: 187870

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7.8A, 8.9A, Rds On (Maks) @ Id, Vgs: 21.8 mOhm @ 7.8A, 10V, Vgs (th) (Maks) @ Id: 2.25V @ 25µA,

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IPG20N06S2L50AATMA1

Infineon Technologies

IPG20N06S2L50AATMA1

bahagian bahagian: 140292

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 55V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 20A, Rds On (Maks) @ Id, Vgs: 50 mOhm @ 15A, 10V, Vgs (th) (Maks) @ Id: 2V @ 19µA,

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Infineon Technologies

IRF9358TRPBF

bahagian bahagian: 160762

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 9.2A, Rds On (Maks) @ Id, Vgs: 16.3 mOhm @ 9.2A, 10V, Vgs (th) (Maks) @ Id: 2.4V @ 25µA,

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IPG16N10S461ATMA1

Infineon Technologies

IPG16N10S461ATMA1

bahagian bahagian: 100256

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 16A, Rds On (Maks) @ Id, Vgs: 61 mOhm @ 16A, 10V, Vgs (th) (Maks) @ Id: 3.5V @ 9µA,

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