Transistor - FET, MOSFET - Susunan | Produk Semikonduktor Diskrit | 11

IRF7901D1TRPBF

bahagian bahagian: 2974

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.2A, Rds On (Maks) @ Id, Vgs: 38 mOhm @ 5A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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Infineon Technologies

IRF7901D1TR

bahagian bahagian: 2718

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.2A, Rds On (Maks) @ Id, Vgs: 38 mOhm @ 5A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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Infineon Technologies

IRF7324

bahagian bahagian: 2912

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 9A, Rds On (Maks) @ Id, Vgs: 18 mOhm @ 9A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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Infineon Technologies

IRF7752

bahagian bahagian: 2653

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.6A, Rds On (Maks) @ Id, Vgs: 30 mOhm @ 4.6A, 10V, Vgs (th) (Maks) @ Id: 2V @ 250µA,

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Infineon Technologies

IRF7350PBF

bahagian bahagian: 2677

Jenis FET: N and P-Channel, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.1A, 1.5A, Rds On (Maks) @ Id, Vgs: 210 mOhm @ 2.1A, 10V, Vgs (th) (Maks) @ Id: 4V @ 250µA,

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Infineon Technologies

IRF7317PBF

bahagian bahagian: 75561

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.6A, 5.3A, Rds On (Maks) @ Id, Vgs: 29 mOhm @ 6A, 4.5V, Vgs (th) (Maks) @ Id: 700mV @ 250µA,

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Infineon Technologies

IRF7338PBF

bahagian bahagian: 2697

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.3A, 3A, Rds On (Maks) @ Id, Vgs: 34 mOhm @ 6A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

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Infineon Technologies

IPG15N06S3L-45

bahagian bahagian: 2793

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 55V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 15A, Rds On (Maks) @ Id, Vgs: 45 mOhm @ 10A, 10V, Vgs (th) (Maks) @ Id: 2.2V @ 10µA,

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Infineon Technologies

IRFH4257DTRPBF

bahagian bahagian: 2942

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 25V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 25A, Rds On (Maks) @ Id, Vgs: 3.4 mOhm @ 25A, 10V, Vgs (th) (Maks) @ Id: 2.1V @ 35µA,

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Infineon Technologies

IRF7304QTRPBF

bahagian bahagian: 2807

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.3A, Rds On (Maks) @ Id, Vgs: 90 mOhm @ 2.2A, 4.5V, Vgs (th) (Maks) @ Id: 700mV @ 250µA,

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Infineon Technologies

IRF7379TR

bahagian bahagian: 2676

Jenis FET: N and P-Channel, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.8A, 4.3A, Rds On (Maks) @ Id, Vgs: 45 mOhm @ 5.8A, 10V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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Infineon Technologies

IRF8910GTRPBF

bahagian bahagian: 2869

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 10A, Rds On (Maks) @ Id, Vgs: 13.4 mOhm @ 10A, 10V, Vgs (th) (Maks) @ Id: 2.55V @ 250µA,

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Infineon Technologies

IRFHM792TR2PBF

bahagian bahagian: 2894

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.3A, Rds On (Maks) @ Id, Vgs: 195 mOhm @ 2.9A, 10V, Vgs (th) (Maks) @ Id: 4V @ 10µA,

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Infineon Technologies

IRF7103PBF

bahagian bahagian: 97659

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 50V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3A, Rds On (Maks) @ Id, Vgs: 130 mOhm @ 3A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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Infineon Technologies

IRF8513TRPBF

bahagian bahagian: 2774

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8A, 11A, Rds On (Maks) @ Id, Vgs: 15.5 mOhm @ 8A, 10V, Vgs (th) (Maks) @ Id: 2.35V @ 25µA,

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Infineon Technologies

IRF7314PBF

bahagian bahagian: 86093

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.3A, Rds On (Maks) @ Id, Vgs: 58 mOhm @ 2.9A, 4.5V, Vgs (th) (Maks) @ Id: 700mV @ 250µA,

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Infineon Technologies

IRF7907PBF

bahagian bahagian: 2738

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 9.1A, 11A, Rds On (Maks) @ Id, Vgs: 16.4 mOhm @ 9.1A, 10V, Vgs (th) (Maks) @ Id: 2.35V @ 25µA,

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Infineon Technologies

IRF9910PBF

bahagian bahagian: 2659

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 10A, 12A, Rds On (Maks) @ Id, Vgs: 13.4 mOhm @ 10A, 10V, Vgs (th) (Maks) @ Id: 2.55V @ 250µA,

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Infineon Technologies

IRF7754TRPBF

bahagian bahagian: 2835

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.5A, Rds On (Maks) @ Id, Vgs: 25 mOhm @ 5.4A, 4.5V, Vgs (th) (Maks) @ Id: 900mV @ 250µA,

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Infineon Technologies

IRF9956TR

bahagian bahagian: 2695

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.5A, Rds On (Maks) @ Id, Vgs: 100 mOhm @ 2.2A, 10V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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Infineon Technologies

IRF9952

bahagian bahagian: 2678

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.5A, 2.3A, Rds On (Maks) @ Id, Vgs: 100 mOhm @ 2.2A, 10V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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Infineon Technologies

IRF7105PBF

bahagian bahagian: 95108

Jenis FET: N and P-Channel, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 25V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.5A, 2.3A, Rds On (Maks) @ Id, Vgs: 100 mOhm @ 1A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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Infineon Technologies

IRF7311TR

bahagian bahagian: 3313

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.6A, Rds On (Maks) @ Id, Vgs: 29 mOhm @ 6A, 4.5V, Vgs (th) (Maks) @ Id: 700mV @ 250µA,

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Infineon Technologies

IRF6802SDTR1PBF

bahagian bahagian: 2905

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 25V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 16A, Rds On (Maks) @ Id, Vgs: 4.2 mOhm @ 16A, 10V, Vgs (th) (Maks) @ Id: 2.1V @ 35µA,

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Infineon Technologies

IRF6702M2DTRPBF

bahagian bahagian: 2830

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 15A, Rds On (Maks) @ Id, Vgs: 6.6 mOhm @ 15A, 10V, Vgs (th) (Maks) @ Id: 2.35V @ 25µA,

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Infineon Technologies

IRF9362PBF

bahagian bahagian: 2823

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8A, Rds On (Maks) @ Id, Vgs: 21 mOhm @ 8A, 10V, Vgs (th) (Maks) @ Id: 2.4V @ 25µA,

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Infineon Technologies

IRF7316GTRPBF

bahagian bahagian: 2626

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.9A, Rds On (Maks) @ Id, Vgs: 58 mOhm @ 4.9A, 10V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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Infineon Technologies

IRF7555TR

bahagian bahagian: 2893

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.3A, Rds On (Maks) @ Id, Vgs: 55 mOhm @ 4.3A, 4.5V, Vgs (th) (Maks) @ Id: 1.2V @ 250µA,

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Infineon Technologies

IRF5810

bahagian bahagian: 2637

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.9A, Rds On (Maks) @ Id, Vgs: 90 mOhm @ 2.9A, 4.5V, Vgs (th) (Maks) @ Id: 1.2V @ 250µA,

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Infineon Technologies

IRFH7911TR2PBF

bahagian bahagian: 2817

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 13A, 28A, Rds On (Maks) @ Id, Vgs: 8.6 mOhm @ 12A, 10V, Vgs (th) (Maks) @ Id: 2.35V @ 25µA,

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Infineon Technologies

IRF5850TRPBF

bahagian bahagian: 2861

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.2A, Rds On (Maks) @ Id, Vgs: 135 mOhm @ 2.2A, 4.5V, Vgs (th) (Maks) @ Id: 1.2V @ 250µA,

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Infineon Technologies

IRF7752TR

bahagian bahagian: 2727

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.6A, Rds On (Maks) @ Id, Vgs: 30 mOhm @ 4.6A, 10V, Vgs (th) (Maks) @ Id: 2V @ 250µA,

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Infineon Technologies

IRF7910PBF

bahagian bahagian: 2677

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 10A, Rds On (Maks) @ Id, Vgs: 15 mOhm @ 8A, 4.5V, Vgs (th) (Maks) @ Id: 2V @ 250µA,

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Infineon Technologies

IRF8915TR

bahagian bahagian: 2721

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8.9A, Rds On (Maks) @ Id, Vgs: 18.3 mOhm @ 8.9A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

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Infineon Technologies

IRF7380PBF

bahagian bahagian: 76115

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 80V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.6A, Rds On (Maks) @ Id, Vgs: 73 mOhm @ 2.2A, 10V, Vgs (th) (Maks) @ Id: 4V @ 250µA,

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Infineon Technologies

IRF7501TR

bahagian bahagian: 2653

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.4A, Rds On (Maks) @ Id, Vgs: 135 mOhm @ 1.7A, 4.5V, Vgs (th) (Maks) @ Id: 700mV @ 250µA,

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